CN112289763A - 一种功率半导体模块 - Google Patents

一种功率半导体模块 Download PDF

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Publication number
CN112289763A
CN112289763A CN202010535948.2A CN202010535948A CN112289763A CN 112289763 A CN112289763 A CN 112289763A CN 202010535948 A CN202010535948 A CN 202010535948A CN 112289763 A CN112289763 A CN 112289763A
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China
Prior art keywords
copper
chip
plate
copper strip
material layer
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Pending
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CN202010535948.2A
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English (en)
Inventor
梁小广
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Wuxi Lipus Semiconductor Co ltd
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Wuxi Lipus Semiconductor Co ltd
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Application filed by Wuxi Lipus Semiconductor Co ltd filed Critical Wuxi Lipus Semiconductor Co ltd
Priority to CN202010535948.2A priority Critical patent/CN112289763A/zh
Publication of CN112289763A publication Critical patent/CN112289763A/zh
Priority to EP21822052.3A priority patent/EP4148778A4/en
Priority to US17/926,623 priority patent/US20230187404A1/en
Priority to PCT/CN2021/080899 priority patent/WO2021248954A1/zh
Priority to JP2022572635A priority patent/JP7482259B2/ja
Pending legal-status Critical Current

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Abstract

本发明提供一种功率半导体模块，包括金属底板、绝缘散热材料层、芯片、绑定板、硅胶、外壳，所述绑定板包括铜板、铜带，所述铜板通过焊接与铜带连接，所述绑定板用于各部件的电路连接，所述金属底板通过焊锡与绝缘散热材料层连接，所述芯片通过焊锡与绝缘散热材料层连接，所述芯片与铜带连接，所述铜带与绝缘散热材料层连接。通过本发明，以解决现有技术存在的较厚的铜框架应用在功率半导体模块封装中冷热变化时给芯片带来的机械应力的问题。

Description

一种功率半导体模块
技术领域
本发明涉及功率半导体模块封装技术领域，具体地说涉及一种功率半导体模块。
背景技术
在电源、电力电子变换器应用中，功率半导体(IGBT，MOSFET，SiC，GaN等)器件因为被广泛采用，在功率较大的场合下一般使用模块的封装形式。功率模块主要由金属底板、焊接层、DBC(双面覆铜陶瓷基板)、AMB(箔钎焊的覆铜陶瓷基板)、绝缘散热树脂薄膜或者其他绝缘散热材料、铜框架、外壳以及硅胶等组成，如图2、图3。铜的导电能力强可以减小导通电阻和寄生电感，同时铜框架和芯片的接触面积大，并且热膨胀系数为16.9x10-6/K，远低于铝(热膨胀系数为23x10-6/K)，更加接近芯片(热膨胀系数为2x10-6/K到4x10-6/K),这样可以增强功率循环寿命。铜框架结合的方式也有一系列的缺点，第一，铜框架一般为使用专用模具，冲压制造，成本较高。第二，为了减小导通电阻，必须使用比较厚的铜框架，但是比较厚的铜框架可能与芯片的接触面在冷热变化时给芯片带来比较大的机械应力，严重时引起芯片破裂损坏。第三，多个芯片在连接到DBC或者其他绝缘散热材料的时候，各个芯片所在位置可能产生偏差，而铜框架一经加工就无法调整各个接触面的位置，可能在加工时产生位置偏移，带来不良品，为了减小不良需要精确的芯片和框架的定位工艺。
发明内容
本发明提供一种功率半导体模块，以解决现有技术存在的较厚的铜框架应用在功率半导体模块封装中冷热变化时给芯片带来的机械应力的问题。
为解决上述技术问题，本发明提供一种功率半导体模块，包括金属底板、绝缘散热材料层、芯片、绑定板、硅胶、外壳，所述绑定板包括铜板、铜带，所述铜板通过焊接与铜带连接，所述绑定板用于各部件的电路连接，所述金属底板通过焊锡与绝缘散热材料层连接，所述芯片通过焊锡与绝缘散热材料层连接，所述芯片与铜带连接，所述铜带与绝缘散热材料层连接。
所述外壳与金属底板通过点胶工艺连接。
所述硅胶填充于外壳内，防腐防潮，保护内部电路，对内部各部件进行高压隔离。
所述铜板通过激光焊接、超音波焊接与铜带连接。
所述芯片通过焊接或者烧结与铜带连接，所述铜带通过焊接或者烧结与绝缘散热材料层连接。
本发明带来的有益效果：一、与现有技术相比，本发明的功率半导体模块里，与芯片接触的铜带在冷热变化时，给芯片带来的机械应力小，不会引起芯片破裂损坏，电路的大部分电流通过较厚的铜板，大大减少导通电阻，也降低了寄生电感；二、可以根据芯片的偏差位置，可以通过调节铜带的位置来补偿芯片的位置偏差，减低了对定位工艺的要求，意味着简化加工工艺，同时提高了产品生产的良率。
附图说明
图1是根据本发明实施例的功率半导体模块的整体结构示意图
图2是使用铜框架的功率半导体模块的整体结构示意图
图3是使用铜框架的功率半导体模块的示意图
图4是根据本发明实施例的功率半导体模块的部分结构示意图一
图5是根据本发明实施例的绑定板的结构示意图一
图6是根据本发明实施例的绑定板的结构示意图二
图7是根据本发明实施例的功率半导体模块的部分结构示意图二
图8是根据本发明实施例四的功率半导体模块的结构示意图
其中，1-金属底板，2-绝缘散热材料层，3-芯片，4-绑定板，5-硅胶，6-外壳，7-铜板，8-铜带。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，以下结合附图及具体实施例，对本发明作进一步地详细说明。
实施例一
如图1、图4、图5所示，本发明提供一种功率半导体模块，包括金属底板1、绝缘散热材料层2、芯片3、绑定板4、硅胶5、外壳6，所述绑定板4包括铜板7、铜带8，所述铜板7通过焊接与铜带8连接，所述绑定板4用于各部件的电路连接，所述金属底板1通过焊锡与绝缘散热材料层2连接，所述芯片3通过焊锡与绝缘散热材料层2连接，所述芯片3与铜带8连接，所述铜带8与绝缘散热材料层2连接。
进一步来说，所述外壳6与金属底板1通过点胶工艺连接。
进一步来说，所述硅胶5填充于外壳6内，防腐防潮，保护内部电路，对内部各部件进行高压隔离。
进一步来说，所述铜板7通过激光焊接、超音波焊接与铜带8连接。
进一步来说，所述芯片3通过焊接或者烧结与铜带8连接，所述铜带8通过焊接或者烧结与绝缘散热材料层2连接。
所述铜板7的厚度为1mm-2mm，所述铜带8的厚度为0.3mm-0.8mm。
实施例二
如图1、图6所示，本发明提供一种功率半导体模块，包括金属底板1、绝缘散热材料层2、芯片3、绑定板4、硅胶5、外壳6，所述绑定板4包括铜板7、铜带8，所述铜板7通过焊接与铜带8连接，所述绑定板4用于各部件的电路连接，所述金属底板1通过焊锡与绝缘散热材料层2连接，所述芯片3通过焊锡与绝缘散热材料层2连接，所述芯片3与铜带8连接，所述铜带8与绝缘散热材料层2连接。
进一步来说，所述外壳6与金属底板1通过点胶工艺连接。
进一步来说，所述硅胶5填充于外壳6内，防腐防潮，保护内部电路，对内部各部件进行高压隔离。
进一步来说，所述铜板7通过激光焊接、超音波焊接与铜带8连接。
进一步来说，所述芯片3通过焊接或者烧结与铜带8连接，所述铜带8通过焊接或者烧结与绝缘散热材料层2连接。
所述铜板7的厚度为1mm-2mm，所述铜带8的厚度为0.5mm-1mm。
将所述铜带8与芯片3接触的面研磨，消除偏差，加大了铜带8与芯片3接触的面积。同时通过进一步减薄与芯片3接触面的铜带8的厚度，减缓铜带8与芯片3结合时的机械应力，进一步提高可靠性。
实施例三
如图1、图7所示，本发明提供一种功率半导体模块，包括金属底板1、绝缘散热材料层2、芯片3、绑定板4、硅胶5、外壳6，所述绑定板4包括铜板7、铜带8，所述铜板7通过焊接与铜带8连接，所述绑定板4用于各部件的电路连接，所述金属底板1通过焊锡与绝缘散热材料层2连接，所述芯片3通过焊锡与绝缘散热材料层2连接，所述芯片3与铜带8连接，所述铜带8与绝缘散热材料层2连接。
进一步来说，所述外壳6与金属底板1通过点胶工艺连接。
进一步来说，所述硅胶5填充于外壳6内，防腐防潮，保护内部电路，对内部各部件进行高压隔离。
进一步来说，所述铜板7通过激光焊接、超音波焊接与铜带8连接。
进一步来说，所述芯片3通过焊接或者烧结与铜带8连接，所述铜带8通过焊接或者烧结与绝缘散热材料层2连接。
所述铜板7的厚度为1mm-2mm，所述铜带8的厚度为0.3mm-0.8mm。
将所述铜板7与主电极端子形成一体结构。
图4中，铜板7与用于连接外部电路的电极端子是分开的结构，这样的结构带来了额外的电阻和寄生电感。本实施例中，通过将铜板7与主电极端子形成一体结构，进一步减小电阻和寄生电感。
实施例四
如图8所示，本发明提供一种功率半导体模块，包括金属底板1、绝缘散热材料层2、芯片3、绑定板4，所述绑定板4包括铜板7、铜带8，所述铜板7通过焊接与铜带8连接，所述绑定板4用于各部件的电路连接，所述金属底板1通过焊锡与绝缘散热材料层2连接，所述芯片3通过焊锡与绝缘散热材料层2连接，所述芯片3与铜带8连接，所述铜带8与绝缘散热材料层2连接。
进一步来说，所述铜板7通过激光焊接、超音波焊接与铜带8连接。
进一步来说，所述芯片3通过焊接或者烧结与铜带8连接，所述铜带8通过焊接或者烧结与绝缘散热材料层2连接。
所述铜板7的厚度为1mm-2mm，所述铜带8的厚度为0.3mm-0.8mm。
半导体模块的封装形式采用树脂材料的塑封方式，根据外形及参数设计需要，使用专用的模具，将树脂灌入其中，将半导体模块的芯片3、绝缘散热材料层2、绑定板4封装固定，即图一中的5和6，使用一体化的树脂材料代替，此一体化塑封方法可以省去硅胶和壳体，简化了生产工序，生产效率更高，产品可靠性更好。
综上所述，一、本发明的功率半导体模块里，与芯片接触的铜带在冷热变化时，给芯片带来的机械应力小，不会引起芯片破裂损坏，电路的大部分电流通过较厚的铜板，大大减少导通电阻，也降低了寄生电感；二、可以根据芯片的偏差位置，可以通过调节铜带的位置来补偿芯片的位置偏差，减低了对定位工艺的要求，意味着简化加工工艺，同时提高了产品生产的良率。
以上所述仅为本发明的实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的权利要求范围之内。

Claims (5)

1.一种功率半导体模块，包括金属底板(1)、绝缘散热材料层(2)、芯片(3)、绑定板(4)、硅胶(5)、外壳(6)，其特征在于：所述绑定板(4)包括铜板(7)、铜带(8)，所述铜板(7)通过焊接与铜带(8)连接，所述绑定板(4)用于各部件的电路连接，所述金属底板(1)通过焊锡与绝缘散热材料层(2)连接，所述芯片(3)通过焊锡与绝缘散热材料层(2)连接，所述芯片(3)与铜带(8)连接，所述铜带(8)与绝缘散热材料层(2)连接。
2.如权利要求1所述的功率半导体模块，其特征在于，所述外壳(6)与金属底板(1)通过点胶工艺连接。
3.如权利要求1所述的功率半导体模块，其特征在于，所述硅胶(5)填充于外壳(6)内，防腐防潮，保护内部电路，对内部各部件进行高压隔离。
4.如权利要求1所述的功率半导体模块，其特征在于，所述铜板(7)通过激光焊接、超音波焊接与铜带(8)连接。
5.如权利要求4所述的功率半导体模块，其特征在于，所述芯片(3)通过焊接或者烧结与铜带(8)连接，所述铜带(8)通过焊接或者烧结与绝缘散热材料层(2)连接。
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