JP5668193B2 - 多結晶シリコンの製造方法 - Google Patents
多結晶シリコンの製造方法 Download PDFInfo
- Publication number
- JP5668193B2 JP5668193B2 JP2011510452A JP2011510452A JP5668193B2 JP 5668193 B2 JP5668193 B2 JP 5668193B2 JP 2011510452 A JP2011510452 A JP 2011510452A JP 2011510452 A JP2011510452 A JP 2011510452A JP 5668193 B2 JP5668193 B2 JP 5668193B2
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- reactor
- silicon
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- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims description 54
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- 239000000203 mixture Substances 0.000 claims description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 230000008021 deposition Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 4
- 239000005052 trichlorosilane Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 97
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 14
- 238000001556 precipitation Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 238000005265 energy consumption Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000005086 pumping Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 230000000779 depleting effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10773—Halogenated silanes obtained by disproportionation and molecular rearrangement of halogenated silanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00002—Chemical plants
- B01J2219/00027—Process aspects
- B01J2219/0004—Processes in series
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Description
(i)供給混合物を製造する単一の共通の装置を使用すること。
(ii)連結リアクターの間の配管システム上に断熱材を設けること。
2基の同一のリアクターを配管システムによって連結した。
本工程中、ロッドの直径は0.14mまで増加した。ガス圧力は、両方のリアクターともほぼ等しく、6x105Paであった。第1のリアクターに供給されるトリクロロシランと水素の混合物の流量は、1基のリアクターに対する単独モードの流量の2倍である。供給混合物を第1のリアクターに供給し、一方、第1のリアクターからの出力ガス混合物を第2のリアクターに供給する。他の稼働条件を、表1−3に示す。
Claims (9)
- シリコン含有ガスを含むガス混合物を配管システムを通して複数のリアクターに供給し、リアクターの内部に置かれ表面にシリコンを析出する析出体を加熱して、リアクター容積中に出力ガス混合物を形成する多結晶シリコンの製造方法であって、シリコン析出の為に同時に少なくとも2基のリアクターを使用し、第1のリアクターを除き、リアクターの入り口を配管システムによって前段の出口のみに順次連結し、共通の製造プロセスの中で使用する全てのガス混合物を第1のリアクターのみに供給し、後続のリアクターにそれ以外のガス混合物を新たに供給せずに、第1のリアクターから最後のリアクターからなる当該複数のリアクターを通して全供給ガス混合物を輸送し、第1のリアクターへのシリコン含有ガス混合物の流量Qを下記式(1)通りとすることからなる、多結晶シリコンの製造方法。
- リアクターを通すシリコンガスの輸送順序を該プロセス中で少なくとも一度は逆の順番に変更する、請求項1の方法。
- 最長のプロセス時間を有するリアクターが最初のリアクターとして作動し、後続のリアクターとして特性プロセス時間が順次減少するリアクターを用い、最小のプロセス時間を有するリアクターを最後のリアクターとして作動する順番になるように、単独形式モードでは異なった特性プロセス時間を有する複数のリアクターを、供給混合物を搬送するための配管システムによって連結する、請求項1に記載の方法。
- 互いに連結したリアクターにおける表面析出温度は最初のリアクターから最後のリアクターに向かって上昇するようにした、請求項1方法。
- シリコン含有ガスはジクロロシラン、トリクロロシラン、テトラクロロシランあるいはそれらの混合物である、請求項1乃至4のいずれかの方法。
- 連結されている全てのリアクターで必要とされるシリコン含有ガスを有する供給ガス混合物は、一つの共通の装置内で準備される、請求項1乃至5のいずれかの方法。
- リアクター間にガスを輸送する配管システムに断熱材が装着されている、請求項1乃至6のいずれかの方法。
- 中空体の表面がシリコン析出用の加熱表面として使用される、請求項1、3乃至7のいずれかの方法。
- プレートの表面がシリコン析出用の加熱表面として使用される、請求項1、3乃至7のいずれかの方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2008121922A RU2388690C2 (ru) | 2008-05-22 | 2008-05-22 | Способ получения поликристаллического кремния |
RU2008121922 | 2008-05-22 | ||
PCT/RU2009/000185 WO2009142538A1 (ru) | 2008-05-22 | 2009-04-20 | Способ получения поликристаллического кремния |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011520757A JP2011520757A (ja) | 2011-07-21 |
JP5668193B2 true JP5668193B2 (ja) | 2015-02-12 |
Family
ID=41340327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011510452A Active JP5668193B2 (ja) | 2008-05-22 | 2009-04-20 | 多結晶シリコンの製造方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US9102538B2 (ja) |
EP (1) | EP2298701B1 (ja) |
JP (1) | JP5668193B2 (ja) |
KR (1) | KR101395249B1 (ja) |
CN (1) | CN102026919B (ja) |
CA (1) | CA2722068C (ja) |
HK (1) | HK1154841A1 (ja) |
RU (1) | RU2388690C2 (ja) |
UA (1) | UA102244C2 (ja) |
WO (1) | WO2009142538A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010040293A1 (de) | 2010-09-06 | 2012-03-08 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
JP2014040330A (ja) * | 2010-12-22 | 2014-03-06 | Asahi Glass Co Ltd | シリコン製造装置及びシリコン製造方法 |
DE102011078676A1 (de) * | 2011-07-05 | 2013-01-10 | Wacker Chemie Ag | Verfahren zur Produktion von Polysilicium |
DE102011120210A1 (de) | 2011-12-05 | 2013-06-06 | Centrotherm Sitec Gmbh | Verfahren und Vorrichtung zum Reinigen von Silicium |
KR101281102B1 (ko) | 2011-12-19 | 2013-07-02 | 한화케미칼 주식회사 | 폴리실리콘의 제조 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4048955A (en) * | 1975-09-02 | 1977-09-20 | Texas Instruments Incorporated | Continuous chemical vapor deposition reactor |
DE2541215C3 (de) * | 1975-09-16 | 1978-08-03 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Herstellung von Siliciumhohlkörpern |
DE2918066A1 (de) * | 1979-05-04 | 1980-11-13 | Siemens Ag | Verfahren zur siliciumherstellung durch gasphasenabscheidung unter wiederverwendung der restgase |
US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
JPH06127928A (ja) * | 1992-10-20 | 1994-05-10 | Tonen Chem Corp | 多結晶シリコンの製造方法 |
KR100210261B1 (ko) * | 1997-03-13 | 1999-07-15 | 이서봉 | 발열반응을 이용한 다결정 실리콘의 제조 방법 |
DE19882883B4 (de) * | 1997-12-15 | 2009-02-26 | Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake | System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen |
US6544333B2 (en) | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
KR100411180B1 (ko) * | 2001-01-03 | 2003-12-18 | 한국화학연구원 | 다결정실리콘의 제조방법과 그 장치 |
GB0113078D0 (en) * | 2001-05-30 | 2001-07-18 | Kvaerner Process Tech Ltd | Process and plant |
AU2004266934B2 (en) * | 2003-08-22 | 2010-03-11 | Tokuyama Corporation | Silicon manufacturing apparatus |
JP4780271B2 (ja) * | 2004-04-30 | 2011-09-28 | 三菱マテリアル株式会社 | 多結晶シリコンの製造方法 |
DE102004038718A1 (de) * | 2004-08-10 | 2006-02-23 | Joint Solar Silicon Gmbh & Co. Kg | Reaktor sowie Verfahren zur Herstellung von Silizium |
DE502006008382D1 (de) * | 2005-03-05 | 2011-01-05 | Jssi Gmbh | Reaktor und verfahren zur herstellung von silizium |
US20080206970A1 (en) * | 2005-04-10 | 2008-08-28 | Franz Hugo | Production Of Polycrystalline Silicon |
EP1847523A1 (en) * | 2006-04-18 | 2007-10-24 | INEOS Phenol GmbH & Co. KG | Method for treating phenol |
US7820126B2 (en) * | 2006-08-18 | 2010-10-26 | Iosil Energy Corporation | Method and apparatus for improving the efficiency of purification and deposition of polycrystalline silicon |
-
2008
- 2008-05-22 RU RU2008121922A patent/RU2388690C2/ru active
-
2009
- 2009-04-20 WO PCT/RU2009/000185 patent/WO2009142538A1/ru active Application Filing
- 2009-04-20 KR KR1020107026102A patent/KR101395249B1/ko active IP Right Grant
- 2009-04-20 US US12/993,534 patent/US9102538B2/en active Active
- 2009-04-20 CA CA 2722068 patent/CA2722068C/en not_active Expired - Fee Related
- 2009-04-20 CN CN200980117592.2A patent/CN102026919B/zh active Active
- 2009-04-20 EP EP09750847.7A patent/EP2298701B1/en active Active
- 2009-04-20 JP JP2011510452A patent/JP5668193B2/ja active Active
- 2009-04-20 UA UAA201011068A patent/UA102244C2/ru unknown
-
2011
- 2011-08-26 HK HK11109035.5A patent/HK1154841A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US20110104035A1 (en) | 2011-05-05 |
CA2722068C (en) | 2014-09-23 |
EP2298701A4 (en) | 2013-05-15 |
JP2011520757A (ja) | 2011-07-21 |
HK1154841A1 (en) | 2012-05-04 |
US9102538B2 (en) | 2015-08-11 |
KR20110020778A (ko) | 2011-03-03 |
RU2008121922A (ru) | 2009-11-27 |
RU2388690C2 (ru) | 2010-05-10 |
WO2009142538A1 (ru) | 2009-11-26 |
EP2298701B1 (en) | 2017-06-28 |
CN102026919B (zh) | 2014-05-28 |
CA2722068A1 (en) | 2009-11-26 |
UA102244C2 (ru) | 2013-06-25 |
CN102026919A (zh) | 2011-04-20 |
KR101395249B1 (ko) | 2014-05-15 |
EP2298701A1 (en) | 2011-03-23 |
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