JP5654490B2 - 高沸点廃棄物の再生プロセス - Google Patents
高沸点廃棄物の再生プロセス Download PDFInfo
- Publication number
- JP5654490B2 JP5654490B2 JP2011547912A JP2011547912A JP5654490B2 JP 5654490 B2 JP5654490 B2 JP 5654490B2 JP 2011547912 A JP2011547912 A JP 2011547912A JP 2011547912 A JP2011547912 A JP 2011547912A JP 5654490 B2 JP5654490 B2 JP 5654490B2
- Authority
- JP
- Japan
- Prior art keywords
- hsicl
- residue
- species
- high boiling
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009835 boiling Methods 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 42
- 239000002699 waste material Substances 0.000 title description 5
- 238000004064 recycling Methods 0.000 title 1
- 239000010909 process residue Substances 0.000 claims description 64
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical group Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 52
- 239000000460 chlorine Substances 0.000 claims description 42
- 239000003054 catalyst Substances 0.000 claims description 39
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 10
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 230000003197 catalytic effect Effects 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 description 19
- 229920000642 polymer Polymers 0.000 description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 238000005984 hydrogenation reaction Methods 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 239000007787 solid Substances 0.000 description 9
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 8
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- -1 for example Chemical compound 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 150000003377 silicon compounds Chemical class 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 229940045803 cuprous chloride Drugs 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000005055 methyl trichlorosilane Substances 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- WQOSMIAFWBPSTQ-UHFFFAOYSA-N CC12C(=O)C(=O)NC1(C(C(N2)(C)Cl)(C)Cl)C Chemical compound CC12C(=O)C(=O)NC1(C(C(N2)(C)Cl)(C)Cl)C WQOSMIAFWBPSTQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ZXRRHFSTAFVGOC-UHFFFAOYSA-N [AlH3].[K] Chemical compound [AlH3].[K] ZXRRHFSTAFVGOC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- KQHIGRPLCKIXNJ-UHFFFAOYSA-N chloro-methyl-silylsilane Chemical compound C[SiH]([SiH3])Cl KQHIGRPLCKIXNJ-UHFFFAOYSA-N 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- VEYJKODKHGEDMC-UHFFFAOYSA-N dichloro(trichlorosilyl)silicon Chemical compound Cl[Si](Cl)[Si](Cl)(Cl)Cl VEYJKODKHGEDMC-UHFFFAOYSA-N 0.000 description 1
- JZALIDSFNICAQX-UHFFFAOYSA-N dichloro-methyl-trimethylsilylsilane Chemical compound C[Si](C)(C)[Si](C)(Cl)Cl JZALIDSFNICAQX-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007038 hydrochlorination reaction Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- XIKYYQJBTPYKSG-UHFFFAOYSA-N nickel Chemical compound [Ni].[Ni] XIKYYQJBTPYKSG-UHFFFAOYSA-N 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- VYFXMIAQVGXIIN-UHFFFAOYSA-N trichloro(chlorosilyl)silane Chemical compound Cl[SiH2][Si](Cl)(Cl)Cl VYFXMIAQVGXIIN-UHFFFAOYSA-N 0.000 description 1
- CIXGGXXZVDVBBY-UHFFFAOYSA-N trichloro(chlorosilyloxy)silane Chemical compound Cl[SiH2]O[Si](Cl)(Cl)Cl CIXGGXXZVDVBBY-UHFFFAOYSA-N 0.000 description 1
- IMYGMRDBUAOCFV-UHFFFAOYSA-N trichloro(dichlorosilyloxy)silane Chemical compound Cl[SiH](Cl)O[Si](Cl)(Cl)Cl IMYGMRDBUAOCFV-UHFFFAOYSA-N 0.000 description 1
- KPFWGLUVXPQOHO-UHFFFAOYSA-N trichloro(silyl)silane Chemical compound [SiH3][Si](Cl)(Cl)Cl KPFWGLUVXPQOHO-UHFFFAOYSA-N 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- QHAHOIWVGZZELU-UHFFFAOYSA-N trichloro(trichlorosilyloxy)silane Chemical compound Cl[Si](Cl)(Cl)O[Si](Cl)(Cl)Cl QHAHOIWVGZZELU-UHFFFAOYSA-N 0.000 description 1
- TXEDGTTUEVJNPE-UHFFFAOYSA-N trichloro(trimethylsilyl)silane Chemical compound C[Si](C)(C)[Si](Cl)(Cl)Cl TXEDGTTUEVJNPE-UHFFFAOYSA-N 0.000 description 1
- BGBCSHOMEDPNEI-UHFFFAOYSA-N trichloro(trimethylsilyloxy)silane Chemical compound C[Si](C)(C)O[Si](Cl)(Cl)Cl BGBCSHOMEDPNEI-UHFFFAOYSA-N 0.000 description 1
- LLTOWQXZKDZGLT-UHFFFAOYSA-N trichloro-(chloro-methyl-trimethylsilylsilyl)silane Chemical compound C[Si](C)(C)[Si](C)(Cl)[Si](Cl)(Cl)Cl LLTOWQXZKDZGLT-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
- C07F7/121—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20
- C07F7/126—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20 by reactions involving the formation of Si-Y linkages, where Y is not a carbon or halogen atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
- C07F7/121—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20
- C07F7/128—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20 by reactions covered by more than one of the groups C07F7/122 - C07F7/127 and of which the starting material is unknown or insufficiently determined
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
Description
a)HSiCl3プロセス残渣及びMCSプロセス残渣を混合して高沸点残渣を形成するステップと、
b)高沸点残渣を水素ガスと接触させるステップとを含む。ステップb)は、反応器において高沸点残渣、水素ガス、及びいずれかの追加の反応物質(添加する場合)を345kPa〜68,900kPaの範囲の圧力で1秒〜5時間の滞留時間、150℃〜1000℃の範囲の温度まで加熱することにより行うことができ、これによりモノシランを含む生成物を生成する。
Claims (4)
- a)高沸点残渣の重量に対して0.01〜20%の触媒を有し、メチルクロロモノシラン(MCS)プロセス残渣又はアルキルハロモノシランプロセス残渣から選択され、2つ以上のケイ素原子を有する化合物を含む第1プロセス残渣、及び、前記触媒を有しない、シリコンプロセス残渣又はHSiCl3プロセス残渣から選択され、2つ以上のケイ素原子を有する化合物を含む第2プロセス残渣を混合するステップと、
b)ステップa)の生成物を水素ガスと接触させ、これによりモノシランを含む生成物を生成するステップとを含むプロセス。 - ステップa)の前に前記第2プロセス残渣を前処理するステップをさらに含む、請求項1に記載のプロセス。
- 前記生成物から1つ以上のモノシランを回収するステップc)をさらに含み、該モノシランはHSiCl3、SiCl4、(CH3)2SiCl2、CH3HSiCl2、及び(CH3)2HSiClからなる群から選択される、請求項1又は2に記載のプロセス。
- 塩素を多く含む種、SiH官能性種、アルキル基を多く含む種、及びこれらの組み合わせからなる群から選択される反応物質を供給するステップをさらに含む、請求項1〜3のいずれか1項に記載のプロセス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910126726A CN101786629A (zh) | 2009-01-22 | 2009-01-22 | 回收高沸点废料的方法 |
CN200910126726.9 | 2009-01-22 | ||
PCT/US2009/049190 WO2010085274A1 (en) | 2009-01-22 | 2009-06-30 | Process for recovery of high boiling waste |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012515704A JP2012515704A (ja) | 2012-07-12 |
JP5654490B2 true JP5654490B2 (ja) | 2015-01-14 |
Family
ID=41066618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011547912A Expired - Fee Related JP5654490B2 (ja) | 2009-01-22 | 2009-06-30 | 高沸点廃棄物の再生プロセス |
Country Status (6)
Country | Link |
---|---|
US (1) | US8852545B2 (ja) |
EP (1) | EP2389384A1 (ja) |
JP (1) | JP5654490B2 (ja) |
KR (1) | KR20110108400A (ja) |
CN (2) | CN101786629A (ja) |
WO (1) | WO2010085274A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE508985T1 (de) * | 2007-03-30 | 2011-05-15 | Spawnt Private Sarl | Katalytische hydrierung |
DE102011005647A1 (de) * | 2011-03-16 | 2012-10-04 | Evonik Degussa Gmbh | Verbundverfahren zur Umstetzung von STC-haltigen und OCS-haltigen Nebenströmen zu wasserstoffhaltigen Chlorsilanen |
US9695052B2 (en) * | 2014-07-01 | 2017-07-04 | Rec Silicon Inc | Recovery of hydrohalosilanes from reaction residues |
JP6486049B2 (ja) * | 2014-09-25 | 2019-03-20 | デンカ株式会社 | ペンタクロロジシランの製造方法並びに該方法により製造されるペンタクロロジシラン |
CN105347349B (zh) * | 2015-12-09 | 2017-04-19 | 宁夏胜蓝化工环保科技有限公司 | 气相催化转化氯代乙硅烷制备氯代单硅烷的工艺及其专用催化剂 |
CN106882809B (zh) * | 2017-03-24 | 2018-05-04 | 亚洲硅业(青海)有限公司 | 一种三氯氢硅的制备方法 |
CN108383125B (zh) * | 2018-05-14 | 2020-02-28 | 亚洲硅业(青海)股份有限公司 | 一种制备高纯三氯氢硅的装置及方法 |
CN109384233B (zh) * | 2018-12-13 | 2023-10-20 | 江苏中能硅业科技发展有限公司 | 一种用于处理硅聚合物的方法 |
EP4017861B8 (en) | 2019-08-22 | 2023-08-16 | Dow Silicones Corporation | Process for purifying silicon compounds |
WO2021113020A1 (en) | 2019-12-03 | 2021-06-10 | Dow Silicones Corporation | Branched oxydisilane/siloxane oligomers and methods for their preparation and use as heat transfer fluids |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2342981A1 (fr) | 1976-03-05 | 1977-09-30 | Rhone Poulenc Ind | Procede de preparation d'hydrogenosilanes |
US4393229A (en) | 1982-04-28 | 1983-07-12 | General Electric Company | Redistribution of polysilanes in high boiling residues |
US4962219A (en) | 1988-10-17 | 1990-10-09 | Dow Corning Corporation | Alkylation of halodisilanes |
US5175329A (en) * | 1992-04-03 | 1992-12-29 | Dow Corning Corporation | Production of organosilanes from polysilanes |
US5292909A (en) * | 1993-07-14 | 1994-03-08 | Dow Corning Corporation | Catalytic conversion of direct process high-boiling component to chlorosilane monomers in the presence of hydrogen chloride and hydrogen |
US5326896A (en) * | 1993-07-14 | 1994-07-05 | Dow Corning Corporation | Conversion of direct process high-boiling component to silane monomers in the presence of hydrogen gas |
US5321147A (en) | 1993-07-16 | 1994-06-14 | Dow Corning Corporation | Conversion of direct process high-boiling component to chlorosilane monomers in the presence of chlorine |
US5292912A (en) | 1993-07-19 | 1994-03-08 | Dow Corning Corporation | Catalytic conversion of direct process high-boiling component to chlorosilane monomers in the presence of hydrogen chloride |
US5430168A (en) | 1994-10-27 | 1995-07-04 | Dow Corning Corporation | Alumimum trichloride catalyzed hydrogenation of high-boiling residue from direct process |
US5606090A (en) * | 1996-06-13 | 1997-02-25 | Dow Corning Corporation | Conversion of high-boiling residue from direct process to monosilanes |
US5627298A (en) | 1996-06-13 | 1997-05-06 | Dow Corning Corporation | One step process for converting high-boiling residue from direct process to monosilanes |
US5629438A (en) | 1996-09-11 | 1997-05-13 | Dow Corning Corporation | Hydrochlorination process for converting high-boiling residue from direct process to monosilanes |
JP3990029B2 (ja) * | 1997-05-12 | 2007-10-10 | 株式会社トクヤマ | ジクロロシラン含量の減少したトリクロロシランの製造方法 |
US5907050A (en) | 1998-09-30 | 1999-05-25 | Dow Corning Corporation | Process for converting polymeric silicon containing compounds to monosilanes |
US5922894A (en) | 1998-10-28 | 1999-07-13 | Dow Corning Corporation | Process for converting polymeric silicon containing compounds to monosilanes |
US6013824A (en) | 1998-12-01 | 2000-01-11 | Dow Corning Corporation | Redistributing silalkylenes in an alkyl-rich silalkylene-containing residue |
US6013235A (en) | 1999-07-19 | 2000-01-11 | Dow Corning Corporation | Conversion of direct process high-boiling residue to monosilanes |
JP2006169012A (ja) * | 2004-12-13 | 2006-06-29 | Sumitomo Titanium Corp | ヘキサクロロジシラン及びその製造方法 |
EP2367832A1 (en) | 2008-12-03 | 2011-09-28 | Dow Corning Corporation | Process for producing trichlorosilane and tetrachlorosilane |
-
2009
- 2009-01-22 CN CN200910126726A patent/CN101786629A/zh active Pending
- 2009-06-30 EP EP09789995A patent/EP2389384A1/en not_active Withdrawn
- 2009-06-30 KR KR20117019312A patent/KR20110108400A/ko not_active Application Discontinuation
- 2009-06-30 WO PCT/US2009/049190 patent/WO2010085274A1/en active Application Filing
- 2009-06-30 US US13/143,134 patent/US8852545B2/en not_active Expired - Fee Related
- 2009-06-30 CN CN2009801546424A patent/CN102282152A/zh active Pending
- 2009-06-30 JP JP2011547912A patent/JP5654490B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20110268641A1 (en) | 2011-11-03 |
US8852545B2 (en) | 2014-10-07 |
EP2389384A1 (en) | 2011-11-30 |
CN101786629A (zh) | 2010-07-28 |
JP2012515704A (ja) | 2012-07-12 |
WO2010085274A1 (en) | 2010-07-29 |
KR20110108400A (ko) | 2011-10-05 |
CN102282152A (zh) | 2011-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5654490B2 (ja) | 高沸点廃棄物の再生プロセス | |
US9296765B2 (en) | Method of preparing an organohalosilane | |
JP2918999B2 (ja) | 多有機基置換シラン及びモノアルキル化シランの製造方法 | |
RU2499801C2 (ru) | Способ получения трихлорсилана и тетрахлорсилана | |
US4946980A (en) | Preparation of organosilanes | |
JPH0789708A (ja) | 水素ガスの存在下での直接法高沸点成分のシランモノマーへの転化 | |
US4985579A (en) | Removal of hydrogen-containing silanes from organosilane mixtures | |
CN1807238A (zh) | 特种有机氯硅烷的制备方法 | |
JP2020534323A (ja) | メチルクロロヒドリドモノシランの製造の統合方法 | |
JPH1081506A (ja) | 直接法からの高沸点残渣のモノシラン類への転化方法 | |
JP5140233B2 (ja) | クロロシランの製造法 | |
US6541651B1 (en) | Process for chlorosilane intermediates manufacture | |
JP4138914B2 (ja) | 直接法からの高沸点残渣をモノシラン類に転化するためのハイドロクロリネーション法 | |
CN106029681A (zh) | 添加有机盐的氢化硅烷化方法 | |
US11352377B2 (en) | Process for the production of organohydridochlorosilanes | |
KR20140093946A (ko) | 다이오가노다이할로실란의 제조 방법 | |
JP4485631B2 (ja) | 濃アルキル・シルアルキレン含有残渣におけるシルアルキレンの再分配法 | |
CN1077576C (zh) | 将来自直接方法的高沸点残余物转化成甲硅烷的方法 | |
JP5426033B2 (ja) | オルガノシランの製造方法 | |
JP2864973B2 (ja) | ジメチルクロロシランとトリオルガノクロロシランの併産方法 | |
US4962219A (en) | Alkylation of halodisilanes | |
US7741504B2 (en) | Method for preparing an ω-haloalkyl dialkylhalosilane | |
JP4447087B2 (ja) | 高分子のシリコン含有化合物のモノシランへの転化方法 | |
RU2785123C2 (ru) | Интегрированный способ получения метилхлоргидридмоносиланов | |
US20220169520A1 (en) | Low temperature process for the safe conversion of the siemens process side-product mixture to chloromonosilanes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130822 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130903 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140508 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141111 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141120 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5654490 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |