JP5651983B2 - 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 - Google Patents

補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 Download PDF

Info

Publication number
JP5651983B2
JP5651983B2 JP2010083267A JP2010083267A JP5651983B2 JP 5651983 B2 JP5651983 B2 JP 5651983B2 JP 2010083267 A JP2010083267 A JP 2010083267A JP 2010083267 A JP2010083267 A JP 2010083267A JP 5651983 B2 JP5651983 B2 JP 5651983B2
Authority
JP
Japan
Prior art keywords
time constant
current
circuit
pulse
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010083267A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011216662A5 (enExample
JP2011216662A (ja
Inventor
前田 修
修 前田
湯脇 武志
武志 湯脇
大尾 桂久
桂久 大尾
孝一 興邊
孝一 興邊
博文 仲埜
博文 仲埜
荒木田 孝博
孝博 荒木田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010083267A priority Critical patent/JP5651983B2/ja
Priority to US12/929,677 priority patent/US8829813B2/en
Priority to KR1020110024286A priority patent/KR101691672B1/ko
Priority to CN201110071814.0A priority patent/CN102208907B/zh
Publication of JP2011216662A publication Critical patent/JP2011216662A/ja
Publication of JP2011216662A5 publication Critical patent/JP2011216662A5/ja
Application granted granted Critical
Publication of JP5651983B2 publication Critical patent/JP5651983B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2010083267A 2010-03-31 2010-03-31 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 Active JP5651983B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010083267A JP5651983B2 (ja) 2010-03-31 2010-03-31 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
US12/929,677 US8829813B2 (en) 2010-03-31 2011-02-08 Correction circuit, drive circuit, light-emitting device and correction method of current pulse waveform
KR1020110024286A KR101691672B1 (ko) 2010-03-31 2011-03-18 보정 회로, 구동 회로, 발광 장치, 및 전류 펄스 파형의 보정 방법
CN201110071814.0A CN102208907B (zh) 2010-03-31 2011-03-24 校正电路、驱动电路、发光器件和电流脉冲波形的校正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010083267A JP5651983B2 (ja) 2010-03-31 2010-03-31 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法

Publications (3)

Publication Number Publication Date
JP2011216662A JP2011216662A (ja) 2011-10-27
JP2011216662A5 JP2011216662A5 (enExample) 2013-04-25
JP5651983B2 true JP5651983B2 (ja) 2015-01-14

Family

ID=44697592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010083267A Active JP5651983B2 (ja) 2010-03-31 2010-03-31 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法

Country Status (4)

Country Link
US (1) US8829813B2 (enExample)
JP (1) JP5651983B2 (enExample)
KR (1) KR101691672B1 (enExample)
CN (1) CN102208907B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5659476B2 (ja) * 2009-09-25 2015-01-28 ソニー株式会社 補正回路、駆動回路および発光装置
JP5949411B2 (ja) * 2012-10-04 2016-07-06 ソニー株式会社 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP5855058B2 (ja) * 2012-10-29 2016-02-09 キヤノン株式会社 画像形成装置
JP6335643B2 (ja) * 2014-05-23 2018-05-30 キヤノン株式会社 画像形成装置
CN107005023B (zh) * 2014-12-19 2020-03-24 皇家飞利浦有限公司 激光传感器模块
JP6561006B2 (ja) 2016-03-29 2019-08-14 株式会社日立エルジーデータストレージ 映像表示装置
WO2018096949A1 (ja) * 2016-11-28 2018-05-31 ソニーセミコンダクタソリューションズ株式会社 駆動装置および発光装置
JP6616368B2 (ja) * 2017-09-14 2019-12-04 ファナック株式会社 レーザ加工前に光学系の汚染レベルに応じて加工条件を補正するレーザ加工装置
JP7482785B2 (ja) * 2018-11-16 2024-05-14 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ装置の駆動方法および面発光レーザ装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0626421B2 (ja) * 1987-02-25 1994-04-06 富士写真フイルム株式会社 半導体レ−ザのドル−プ補正装置
JP2642121B2 (ja) * 1988-02-10 1997-08-20 株式会社リコー 半導体レーザー出力制御装置
JP2917333B2 (ja) * 1989-11-30 1999-07-12 日本電気株式会社 光送信方法及び光送信装置
US5065401A (en) * 1991-02-26 1991-11-12 Spectra Diode Laboratories, Inc. Pulse jitter reduction method for a laser diode or array
JP2000138415A (ja) * 1998-11-02 2000-05-16 Fujikura Ltd 半導体レーザ駆動回路
DE10063707A1 (de) * 2000-12-20 2002-07-04 Heidelberger Druckmasch Ag Verfahren zur thermischen Stabilisierung einer Laserdiode in einem Recorder
JP2002237650A (ja) * 2001-02-09 2002-08-23 Canon Inc 発光素子光量制御方式、発光素子光量制御装置およびそれを用いた画像記録装置
JP2008535263A (ja) * 2005-03-30 2008-08-28 ノバラックス,インコーポレイティド 周波数安定化した垂直拡大キャビティ面発光レーザ
JP4495052B2 (ja) * 2005-08-26 2010-06-30 古河電気工業株式会社 面発光レーザ素子、光送信モジュール、光コネクタおよび光通信システム
JP5016853B2 (ja) * 2006-06-09 2012-09-05 キヤノン株式会社 画像形成装置及びレーザ光量補正方法
JP5083867B2 (ja) * 2007-03-02 2012-11-28 株式会社リコー 光源駆動装置、光走査装置及び画像形成装置
JP2008306118A (ja) 2007-06-11 2008-12-18 Sony Corp 面発光型半導体レーザ
JP5058939B2 (ja) * 2007-11-27 2012-10-24 キヤノン株式会社 面発光レーザ、該面発光レーザによって構成される光学機器
CN101482911A (zh) * 2009-01-22 2009-07-15 中国科学院等离子体物理研究所 可变积分时间常数的积分器
JP5659476B2 (ja) * 2009-09-25 2015-01-28 ソニー株式会社 補正回路、駆動回路および発光装置

Also Published As

Publication number Publication date
CN102208907B (zh) 2016-05-25
US8829813B2 (en) 2014-09-09
US20110241571A1 (en) 2011-10-06
JP2011216662A (ja) 2011-10-27
KR101691672B1 (ko) 2016-12-30
KR20110109872A (ko) 2011-10-06
CN102208907A (zh) 2011-10-05

Similar Documents

Publication Publication Date Title
JP5651983B2 (ja) 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP5659476B2 (ja) 補正回路、駆動回路および発光装置
JP2012209501A (ja) 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP5949411B2 (ja) 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
Wang et al. Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers
JP2011216662A5 (enExample)
JP2014013823A (ja) 波長可変半導体レーザの制御方法
JP6328876B2 (ja) 駆動装置および発光装置
CN111344917B (zh) 半导体激光器、驱动控制装置和半导体激光器的控制方法
US20240136793A1 (en) Surface-emitting laser, laser device, detection device, mobile object, and method for driving surface-emitting laser
US20250096529A1 (en) Surface emitting laser, laser device, detection device, mobile object, and surface emitting laser driving method
US20240322525A1 (en) Surface-emitting laser, laser device, detection device, mobile object, information terminal apparatus, and method for driving surface-emitting laser
Johnson et al. Record high temperature high output power red VCSELs
El Amili et al. Experimental study of the delayed threshold phenomenon in a class-A VECSEL
KR20240011783A (ko) 면 발광 레이저, 레이저 디바이스, 검출 디바이스, 이동 대상체 및 면 발광 레이저 구동 방법
JP2024058613A (ja) 面発光レーザ、レーザ装置、検出装置、移動体及び面発光レーザの駆動方法
JP2024121668A (ja) 面発光レーザ、レーザ装置、検出装置、移動体及び面発光レーザの駆動方法
CN117795793A (zh) 表面发射激光器,激光装置,检测装置,移动体,以及表面发射激光器驱动方法
JP2007227723A (ja) 波長可変光源装置、及び、波長可変光源制御方法
JP2006032407A (ja) 半導体レーザ装置
JP2017084936A (ja) 光源および原子発振器
Mukherjee et al. Semiconductor lasers

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130307

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130307

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140128

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140331

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140902

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140930

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141021

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141103

R151 Written notification of patent or utility model registration

Ref document number: 5651983

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250