KR101691672B1 - 보정 회로, 구동 회로, 발광 장치, 및 전류 펄스 파형의 보정 방법 - Google Patents

보정 회로, 구동 회로, 발광 장치, 및 전류 펄스 파형의 보정 방법 Download PDF

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KR101691672B1
KR101691672B1 KR1020110024286A KR20110024286A KR101691672B1 KR 101691672 B1 KR101691672 B1 KR 101691672B1 KR 1020110024286 A KR1020110024286 A KR 1020110024286A KR 20110024286 A KR20110024286 A KR 20110024286A KR 101691672 B1 KR101691672 B1 KR 101691672B1
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time constant
current
circuit
pulse
semiconductor laser
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KR20110109872A (ko
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오사무 마에다
타케시 유와키
카츠히사 다이오
코이치 코베
히로후미 나카노
타카히로 아라키다
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소니 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020110024286A 2010-03-31 2011-03-18 보정 회로, 구동 회로, 발광 장치, 및 전류 펄스 파형의 보정 방법 Active KR101691672B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-083267 2010-03-31
JP2010083267A JP5651983B2 (ja) 2010-03-31 2010-03-31 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法

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Publication Number Publication Date
KR20110109872A KR20110109872A (ko) 2011-10-06
KR101691672B1 true KR101691672B1 (ko) 2016-12-30

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US (1) US8829813B2 (enExample)
JP (1) JP5651983B2 (enExample)
KR (1) KR101691672B1 (enExample)
CN (1) CN102208907B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5659476B2 (ja) * 2009-09-25 2015-01-28 ソニー株式会社 補正回路、駆動回路および発光装置
JP5949411B2 (ja) * 2012-10-04 2016-07-06 ソニー株式会社 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP5855058B2 (ja) * 2012-10-29 2016-02-09 キヤノン株式会社 画像形成装置
JP6335643B2 (ja) * 2014-05-23 2018-05-30 キヤノン株式会社 画像形成装置
EP3235078B1 (en) * 2014-12-19 2022-02-02 TRUMPF Photonic Components GmbH Laser sensor module
JP6561006B2 (ja) 2016-03-29 2019-08-14 株式会社日立エルジーデータストレージ 映像表示装置
WO2018096949A1 (ja) * 2016-11-28 2018-05-31 ソニーセミコンダクタソリューションズ株式会社 駆動装置および発光装置
JP6616368B2 (ja) * 2017-09-14 2019-12-04 ファナック株式会社 レーザ加工前に光学系の汚染レベルに応じて加工条件を補正するレーザ加工装置
US12009638B2 (en) 2018-11-16 2024-06-11 Sony Semiconductor Solutions Corporation Surface emission laser driving method and surface emission laser device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329429A (ja) * 2006-06-09 2007-12-20 Canon Inc 画像形成装置及びレーザ光量補正方法
JP2008213246A (ja) * 2007-03-02 2008-09-18 Ricoh Co Ltd 光源駆動装置、光走査装置及び画像形成装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0626421B2 (ja) * 1987-02-25 1994-04-06 富士写真フイルム株式会社 半導体レ−ザのドル−プ補正装置
JP2642121B2 (ja) * 1988-02-10 1997-08-20 株式会社リコー 半導体レーザー出力制御装置
JP2917333B2 (ja) * 1989-11-30 1999-07-12 日本電気株式会社 光送信方法及び光送信装置
US5065401A (en) * 1991-02-26 1991-11-12 Spectra Diode Laboratories, Inc. Pulse jitter reduction method for a laser diode or array
JP2000138415A (ja) * 1998-11-02 2000-05-16 Fujikura Ltd 半導体レーザ駆動回路
DE10063707A1 (de) * 2000-12-20 2002-07-04 Heidelberger Druckmasch Ag Verfahren zur thermischen Stabilisierung einer Laserdiode in einem Recorder
JP2002237650A (ja) * 2001-02-09 2002-08-23 Canon Inc 発光素子光量制御方式、発光素子光量制御装置およびそれを用いた画像記録装置
EP1875566B1 (en) * 2005-03-30 2014-05-21 Necsel Intellectual Property, Inc. Frequency stabilized vertical extended cavity surface emitting lasers
JP4495052B2 (ja) * 2005-08-26 2010-06-30 古河電気工業株式会社 面発光レーザ素子、光送信モジュール、光コネクタおよび光通信システム
JP2008306118A (ja) 2007-06-11 2008-12-18 Sony Corp 面発光型半導体レーザ
JP5058939B2 (ja) * 2007-11-27 2012-10-24 キヤノン株式会社 面発光レーザ、該面発光レーザによって構成される光学機器
CN101482911A (zh) * 2009-01-22 2009-07-15 中国科学院等离子体物理研究所 可变积分时间常数的积分器
JP5659476B2 (ja) * 2009-09-25 2015-01-28 ソニー株式会社 補正回路、駆動回路および発光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007329429A (ja) * 2006-06-09 2007-12-20 Canon Inc 画像形成装置及びレーザ光量補正方法
JP2008213246A (ja) * 2007-03-02 2008-09-18 Ricoh Co Ltd 光源駆動装置、光走査装置及び画像形成装置

Also Published As

Publication number Publication date
JP5651983B2 (ja) 2015-01-14
US8829813B2 (en) 2014-09-09
KR20110109872A (ko) 2011-10-06
JP2011216662A (ja) 2011-10-27
CN102208907B (zh) 2016-05-25
US20110241571A1 (en) 2011-10-06
CN102208907A (zh) 2011-10-05

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