JP5646423B2 - 半導体発光装置及びその製造方法 - Google Patents

半導体発光装置及びその製造方法 Download PDF

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Publication number
JP5646423B2
JP5646423B2 JP2011209816A JP2011209816A JP5646423B2 JP 5646423 B2 JP5646423 B2 JP 5646423B2 JP 2011209816 A JP2011209816 A JP 2011209816A JP 2011209816 A JP2011209816 A JP 2011209816A JP 5646423 B2 JP5646423 B2 JP 5646423B2
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layer
dot
type semiconductor
electrode
light emitting
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JP2011258993A (ja
JP2011258993A5 (enExample
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衛司 村本
衛司 村本
布上　真也
真也 布上
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Toshiba Corp
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Toshiba Corp
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JP2011209816A 2011-09-26 2011-09-26 半導体発光装置及びその製造方法 Active JP5646423B2 (ja)

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JP2011209816A JP5646423B2 (ja) 2011-09-26 2011-09-26 半導体発光装置及びその製造方法

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JP2011209816A JP5646423B2 (ja) 2011-09-26 2011-09-26 半導体発光装置及びその製造方法

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JP2008170967A Division JP5197186B2 (ja) 2008-06-30 2008-06-30 半導体発光装置

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JP2012275569A Division JP2013062535A (ja) 2012-12-18 2012-12-18 半導体発光装置及びその製造方法

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JP2011258993A JP2011258993A (ja) 2011-12-22
JP2011258993A5 JP2011258993A5 (enExample) 2013-02-07
JP5646423B2 true JP5646423B2 (ja) 2014-12-24

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Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187772A (ja) * 1997-09-01 1999-03-30 Showa Denko Kk 半導体発光素子用の電極
KR100624411B1 (ko) * 2003-08-25 2006-09-18 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
JP2005116794A (ja) * 2003-10-08 2005-04-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
KR100799857B1 (ko) * 2003-10-27 2008-01-31 삼성전기주식회사 전극 구조체 및 이를 구비하는 반도체 발광 소자
JP2006024750A (ja) * 2004-07-08 2006-01-26 Matsushita Electric Ind Co Ltd 発光素子
KR100657909B1 (ko) * 2004-11-08 2006-12-14 삼성전기주식회사 화합물 반도체 소자의 전극 형성방법
JP4787562B2 (ja) * 2005-07-29 2011-10-05 昭和電工株式会社 ｐｎ接合型発光ダイオード
KR100725610B1 (ko) * 2006-04-18 2007-06-08 포항공과대학교 산학협력단 오믹 전극 형성 방법 및 반도체 발광 소자
JP5197186B2 (ja) * 2008-06-30 2013-05-15 株式会社東芝 半導体発光装置

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