JP2011258993A5 - - Google Patents
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- Publication number
- JP2011258993A5 JP2011258993A5 JP2011209816A JP2011209816A JP2011258993A5 JP 2011258993 A5 JP2011258993 A5 JP 2011258993A5 JP 2011209816 A JP2011209816 A JP 2011209816A JP 2011209816 A JP2011209816 A JP 2011209816A JP 2011258993 A5 JP2011258993 A5 JP 2011258993A5
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- JP
- Japan
- Prior art keywords
- layer
- type semiconductor
- semiconductor layer
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011209816A JP5646423B2 (ja) | 2011-09-26 | 2011-09-26 | 半導体発光装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011209816A JP5646423B2 (ja) | 2011-09-26 | 2011-09-26 | 半導体発光装置及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008170967A Division JP5197186B2 (ja) | 2008-06-30 | 2008-06-30 | 半導体発光装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012275569A Division JP2013062535A (ja) | 2012-12-18 | 2012-12-18 | 半導体発光装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011258993A JP2011258993A (ja) | 2011-12-22 |
| JP2011258993A5 true JP2011258993A5 (enExample) | 2013-02-07 |
| JP5646423B2 JP5646423B2 (ja) | 2014-12-24 |
Family
ID=45474750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011209816A Active JP5646423B2 (ja) | 2011-09-26 | 2011-09-26 | 半導体発光装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5646423B2 (enExample) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1187772A (ja) * | 1997-09-01 | 1999-03-30 | Showa Denko Kk | 半導体発光素子用の電極 |
| KR100624411B1 (ko) * | 2003-08-25 | 2006-09-18 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| JP2005116794A (ja) * | 2003-10-08 | 2005-04-28 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光素子 |
| KR100799857B1 (ko) * | 2003-10-27 | 2008-01-31 | 삼성전기주식회사 | 전극 구조체 및 이를 구비하는 반도체 발광 소자 |
| JP2006024750A (ja) * | 2004-07-08 | 2006-01-26 | Matsushita Electric Ind Co Ltd | 発光素子 |
| KR100657909B1 (ko) * | 2004-11-08 | 2006-12-14 | 삼성전기주식회사 | 화합물 반도체 소자의 전극 형성방법 |
| JP4787562B2 (ja) * | 2005-07-29 | 2011-10-05 | 昭和電工株式会社 | pn接合型発光ダイオード |
| KR100725610B1 (ko) * | 2006-04-18 | 2007-06-08 | 포항공과대학교 산학협력단 | 오믹 전극 형성 방법 및 반도체 발광 소자 |
| JP5197186B2 (ja) * | 2008-06-30 | 2013-05-15 | 株式会社東芝 | 半導体発光装置 |
-
2011
- 2011-09-26 JP JP2011209816A patent/JP5646423B2/ja active Active
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