JP5642805B2 - 照明用途のためのエレクトロルミネッセンスデバイス - Google Patents
照明用途のためのエレクトロルミネッセンスデバイス Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Description
有機発光デバイスの作製方法を提供する。第一の電極を準備し、その上にデバイスの残りの部分を作製する。第一の有機層を、溶液加工によってその第一の電極の上に堆積させる。第一の有機層は以下のものを含む:
i. 第一の有機層の有機ホスト物質;
ii. その第一の有機層の第一の有機発光物質;
iii. その第一の有機層の第二の有機発光物質。
第二の有機層を、その第一の有機層と直接接触させて且つその上に堆積させる。第二の有機層は、第二の有機層の有機発光物質を含む。次に、第二の電極をその第二の有機層の上に堆積させる。このデバイスは、その他の層を含んでいてもよい。
溶液加工によって、第一の電極の上に、第三の有機層の有機物質を含む第三の有機層を堆積させる工程;及び
溶液加工によって、第三の有機層の上に、第四の有機層の有機物質を含む第四の有機層を堆積させる工程、
をも含む。
一般に、OLEDは、アノードとカソードとの間に配置され且つそれらと電気的に接続された少なくとも1つの有機層を含む。電流が流された場合、有機層(1又は複数)にアノードは正孔を注入し、カソードは電子を注入する。注入された正孔と電子はそれぞれ反対に帯電した電極に向かって移動する。電子と正孔が同じ分子上に局在する場合、励起エネルギー状態を有する局在化された電子−正孔対である「励起子」が形成される。励起子が発光機構によって緩和するときに光が発せられる。いくつかの場合には、励起子はエキシマー又はエキシプレックス上に局在化されうる。非放射機構、例えば、熱緩和も起こりうるが、通常は好ましくないと考えられる。
及び、Baldoら,“Very high-efficiency green organic light-emitting devices based on electrophosphorescence”, Appl. Phys. Lett., vol. 75, No. 3, 4-6 (1999) (“Baldo-II”)、これらを参照により全体を援用する。燐光は、米国特許第7,279,704号明細書の第5〜6欄に、より詳細に記載されており、これを参照により援用する。
i. 第一の有機層の有機ホスト物質;
ii. その第一の有機層の第一の有機発光物質;
iii. その第一の有機層の第二の有機発光物質、
を含む。
第二の有機層をその第一の有機層と直接接触させ且つその上に堆積させる。その第二の有機層は、その第二の有機層の有機発光物質を含む。次に第二の電極をその第二の有機層の上に堆積させる。このデバイスはその他の層を含んでいてもよい。
ITO(80nm)/LG101(10nm)/NPD(45nm)、NS−60:緑色ドーパント:赤色ドーパント−1(69:30:1;20nm)/ホスト−2:青色ドーパント−1(80:20;7.5nm)/ホスト−2(5nm)/LG201(45nm)/LiF/Al。
7つのVTE白色デバイスを別バッチで作製した。これらのデバイスの発光を測定し、そのデバイスのCIE座標を図8及び9にプロットした。7つのデバイス全ては、構造、組成、及び厚さが同じになるように注意深く作製した。しかし、その色は、異なるバッチによって全く異なる。7バッチの平均のCIE座標は(0.424±0.007,0.413±0.014)である。
ITO(120nm)/HIL−1:導電性ドーパント−1(90:10;5nm)/HTL−1(10nm)/ホスト−1:緑色ドーパント−1:赤色ドーパント−1(87:12:1;25nm)/ホスト−2:青色ドーパント−1(90:10;10nm)/ホスト−2(5nm)/Alq3(40nm)/LiF/Al。
Claims (8)
- 以下の工程:
a.第一の電極を準備する工程;
b.前記第一の電極の上に且つ溶液加工法によって第一の有機層を堆積させる工程であって、さらに前記第一の有機層が、
i. 前記第一の有機層の有機ホスト物質;
ii. 前記第一の有機層の第一の有機発光物質(前記第一の有機発光物質は590〜700nmの可視スペクトル中にピーク発光波長を有する);
iii. 前記第一の有機層の第二の有機発光物質(前記第二の有機発光物質は、その可視スペクトル中、500〜590nmにピーク発光波長を有する)、
を含む工程;
c.前記第一の有機層と直接接触させ且つその上に第二の有機層を堆積させる工程であって、さらに前記第二の有機層が、前記第二の有機層の有機ホスト物質及び有機発光物質を含み、前記第二の有機層の前記有機発光物質が400〜500nmの可視スペクトル中にピーク発光波長を有し、且つ、前記第二の有機層が蒸着によって堆積され、そのとき前記第二の有機層の有機ホスト物質及び前記第二の有機層の有機発光物質が共堆積される工程;
d.前記第二の有機層の上に第二の電極を堆積させる工程、
を含む、有機発光デバイスの製造方法。 - 前記第一の有機層の前記第一の有機発光物質が、0.01〜5質量%の濃度で前記第一の有機層中に存在し、且つ、
前記第一の有機層の前記第二の有機発光物質が、前記第一の有機発光物質の濃度の1.1〜500倍の濃度で前記第一の有機層中に存在し、且つ40質量%以下の量で存在する、請求項1に記載の製造方法。 - 前記第一の有機層の前記第一の有機発光物質が0.2〜4質量%の濃度で前記第一の有機層中に存在し;
前記第一の有機層の前記第二の有機発光物質が、前記第一の有機発光物質の濃度の2〜200倍の濃度で前記第一の有機層中に存在する、
請求項1に記載の製造方法。 - 前記第一の有機層の第一の有機発光物質、前記第一の有機層の第二の有機発光物質、及び前記第二の有機層の有機発光物質が全て小分子物質である、請求項1に記載の製造方法。
- 前記第一の有機層を堆積させる前に、以下の工程:
a.溶液加工によって、前記第一の電極の上に、第三の有機層の有機物質を含む第三の有機層を堆積させる工程;
b.溶液加工によって、前記第三の有機層の上に、第四の有機層の有機物質を含む第四の有機層を堆積させる工程、
をさらに含み、
前記第四の有機層を堆積させるときに前記第三の有機層が溶解せず、且つ、前記第一の有機層を堆積させるときに前記第四の有機層が溶解しない、
請求項1に記載の製造方法。 - 前記有機発光デバイスが、0.15〜0.65の範囲のx座標及び0.1〜0.7の範囲のy座標のCIE座標を有する光を発するものである、請求項1に記載の製造方法。
- 前記有機発光デバイスが、0.25〜0.5の範囲のx座標及び0.2〜0.5の範囲のy座標のCIE座標を有する光を発するものである、請求項6に記載の製造方法。
- 前記第一の有機層が、前記第一の有機層の第三の有機発光物質をさらに含んでいる、請求項1に記載の製造方法。
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US29668010P | 2010-01-20 | 2010-01-20 | |
US61/296,680 | 2010-01-20 | ||
US12/913,443 US8288187B2 (en) | 2010-01-20 | 2010-10-27 | Electroluminescent devices for lighting applications |
US12/913,443 | 2010-10-27 | ||
PCT/US2010/056021 WO2011090535A1 (en) | 2010-01-20 | 2010-11-09 | Electroluminescent devices for lighting applications |
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JP2014220075A Active JP6125481B2 (ja) | 2010-01-20 | 2014-10-29 | 照明用途のためのエレクトロルミネッセンスデバイス |
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EP (1) | EP2526577B1 (ja) |
JP (3) | JP5642805B2 (ja) |
KR (2) | KR20170021376A (ja) |
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US8288187B2 (en) * | 2010-01-20 | 2012-10-16 | Universal Display Corporation | Electroluminescent devices for lighting applications |
US20120104374A1 (en) * | 2010-11-03 | 2012-05-03 | Cambrios Technologies Corporation | Coating compositions for forming nanocomposite films |
KR102012047B1 (ko) | 2012-01-06 | 2019-08-19 | 유니버셜 디스플레이 코포레이션 | 효율이 큰 인광 물질 |
TWI494305B (zh) * | 2012-05-31 | 2015-08-01 | Lg Chemical Ltd | 有機電致發光裝置 |
WO2014044722A1 (en) | 2012-09-20 | 2014-03-27 | Basf Se | Azadibenzofurans for electronic applications |
GB2509718A (en) * | 2013-01-09 | 2014-07-16 | Cambridge Display Tech Ltd | Method for forming a layer of an electronic device and appropriate precursor compounds |
US8809848B1 (en) * | 2013-03-07 | 2014-08-19 | National Tsing Hua University | Full-band and high-CRI organic light-emitting diode |
US10074806B2 (en) | 2013-08-20 | 2018-09-11 | Universal Display Corporation | Organic electroluminescent materials and devices |
US9385348B2 (en) | 2013-08-29 | 2016-07-05 | The Regents Of The University Of Michigan | Organic electronic devices with multiple solution-processed layers |
WO2015031862A1 (en) | 2013-08-29 | 2015-03-05 | The Regents Of The University Of Michigan | Organic electronic devices with multiple solution-processed layers |
WO2015063046A1 (en) | 2013-10-31 | 2015-05-07 | Basf Se | Azadibenzothiophenes for electronic applications |
EP3136462A4 (en) * | 2014-04-25 | 2017-12-20 | Sumitomo Chemical Company Limited | Light-emitting element |
JP2014220248A (ja) * | 2014-06-25 | 2014-11-20 | 三菱化学株式会社 | 有機電界発光素子の製造方法 |
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US20140206121A1 (en) | 2014-07-24 |
CN106207013B (zh) | 2019-06-14 |
JP6125481B2 (ja) | 2017-05-10 |
TW201208167A (en) | 2012-02-16 |
US20130002132A1 (en) | 2013-01-03 |
EP2526577B1 (en) | 2020-03-25 |
WO2011090535A1 (en) | 2011-07-28 |
TW201614890A (en) | 2016-04-16 |
TWI566452B (zh) | 2017-01-11 |
KR20170021376A (ko) | 2017-02-27 |
KR20120129912A (ko) | 2012-11-28 |
JP6553113B2 (ja) | 2019-07-31 |
JP2017120795A (ja) | 2017-07-06 |
EP2526577A1 (en) | 2012-11-28 |
JP2013517612A (ja) | 2013-05-16 |
CN102792480B (zh) | 2016-09-14 |
US9054344B2 (en) | 2015-06-09 |
TWI524569B (zh) | 2016-03-01 |
US8288187B2 (en) | 2012-10-16 |
CN102792480A (zh) | 2012-11-21 |
JP2015038887A (ja) | 2015-02-26 |
CN106207013A (zh) | 2016-12-07 |
US20110177641A1 (en) | 2011-07-21 |
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