JP5637640B2 - バックコンタクトソーラーセルの製造方法 - Google Patents

バックコンタクトソーラーセルの製造方法 Download PDF

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Publication number
JP5637640B2
JP5637640B2 JP2012556055A JP2012556055A JP5637640B2 JP 5637640 B2 JP5637640 B2 JP 5637640B2 JP 2012556055 A JP2012556055 A JP 2012556055A JP 2012556055 A JP2012556055 A JP 2012556055A JP 5637640 B2 JP5637640 B2 JP 5637640B2
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Japan
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type dopant
dopant source
source layer
layer
substrate
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Japanese (ja)
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JP2013521645A5 (https=
JP2013521645A (ja
Inventor
リ、ボ
スミス、デヴィッド
カズンズ、ピーター
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SunPower Corp
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SunPower Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2012556055A 2010-03-04 2010-12-28 バックコンタクトソーラーセルの製造方法 Active JP5637640B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US31065510P 2010-03-04 2010-03-04
US61/310,655 2010-03-04
US12/972,247 US8790957B2 (en) 2010-03-04 2010-12-17 Method of fabricating a back-contact solar cell and device thereof
US12/972,247 2010-12-17
PCT/US2010/062264 WO2011109058A2 (en) 2010-03-04 2010-12-28 Method of fabricating a back-contact solar cell and device thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014213291A Division JP2015062232A (ja) 2010-03-04 2014-10-20 バックコンタクトソーラーセルおよびソーラーセルの製造方法

Publications (3)

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JP2013521645A JP2013521645A (ja) 2013-06-10
JP2013521645A5 JP2013521645A5 (https=) 2013-11-21
JP5637640B2 true JP5637640B2 (ja) 2014-12-10

Family

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Family Applications (2)

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JP2012556055A Active JP5637640B2 (ja) 2010-03-04 2010-12-28 バックコンタクトソーラーセルの製造方法
JP2014213291A Pending JP2015062232A (ja) 2010-03-04 2014-10-20 バックコンタクトソーラーセルおよびソーラーセルの製造方法

Family Applications After (1)

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JP2014213291A Pending JP2015062232A (ja) 2010-03-04 2014-10-20 バックコンタクトソーラーセルおよびソーラーセルの製造方法

Country Status (7)

Country Link
US (2) US8790957B2 (https=)
JP (2) JP5637640B2 (https=)
KR (3) KR20170076814A (https=)
CN (2) CN102870225B (https=)
AU (1) AU2010347232B2 (https=)
DE (1) DE112010005344B4 (https=)
WO (1) WO2011109058A2 (https=)

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JP3174907B2 (ja) 1996-12-16 2001-06-11 株式会社ジーデイーエス 電荷信号均一化装置
JP2015062232A (ja) * 2010-03-04 2015-04-02 サンパワー コーポレイション バックコンタクトソーラーセルおよびソーラーセルの製造方法

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US10011920B2 (en) 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
US8586397B2 (en) * 2011-09-30 2013-11-19 Sunpower Corporation Method for forming diffusion regions in a silicon substrate
US9202965B2 (en) * 2011-12-16 2015-12-01 Jusung Engineering Co., Ltd. Method for manufacturing solar cell
US20130247967A1 (en) * 2012-03-23 2013-09-26 Scott Harrington Gaseous ozone (o3) treatment for solar cell fabrication
US9059212B2 (en) 2012-10-31 2015-06-16 International Business Machines Corporation Back-end transistors with highly doped low-temperature contacts
US20140130854A1 (en) * 2012-11-12 2014-05-15 Samsung Sdi Co., Ltd. Photoelectric device and the manufacturing method thereof
US8912071B2 (en) 2012-12-06 2014-12-16 International Business Machines Corporation Selective emitter photovoltaic device
US8642378B1 (en) * 2012-12-18 2014-02-04 International Business Machines Corporation Field-effect inter-digitated back contact photovoltaic device
US9236509B2 (en) * 2013-04-24 2016-01-12 Natcore Technology, Inc. Solar cells with patterned antireflective surfaces
TW201442261A (zh) * 2013-04-30 2014-11-01 Terasolar Energy Materials Corp 矽晶太陽能電池的製造方法以及矽晶太陽能電池
JP6114170B2 (ja) * 2013-12-05 2017-04-12 信越化学工業株式会社 太陽電池の製造方法
US9401450B2 (en) * 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US9837259B2 (en) 2014-08-29 2017-12-05 Sunpower Corporation Sequential etching treatment for solar cell fabrication
US9246046B1 (en) * 2014-09-26 2016-01-26 Sunpower Corporation Etching processes for solar cell fabrication
US11355657B2 (en) * 2015-03-27 2022-06-07 Sunpower Corporation Metallization of solar cells with differentiated p-type and n-type region architectures
NL2015534B1 (en) * 2015-09-30 2017-05-10 Tempress Ip B V Method of manufacturing a solar cell.
US9607847B1 (en) * 2015-12-18 2017-03-28 Texas Instruments Incorporated Enhanced lateral cavity etch
US10217878B2 (en) 2016-04-01 2019-02-26 Sunpower Corporation Tri-layer semiconductor stacks for patterning features on solar cells
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FR3058264B1 (fr) * 2016-10-28 2020-10-02 Commissariat Energie Atomique Procede de fabrication de cellules photovoltaiques a contacts arriere.
WO2018092189A1 (ja) 2016-11-15 2018-05-24 信越化学工業株式会社 高光電変換効率太陽電池、その製造方法、太陽電池モジュール及び太陽光発電システム
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
FR3112427A1 (fr) * 2020-07-13 2022-01-14 Semco Smartech France Formation de contacts passivés pour cellules solaires IBC
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CN118738214A (zh) * 2021-09-30 2024-10-01 泰州隆基乐叶光伏科技有限公司 一种背接触电池及其制作方法
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CN118073471A (zh) * 2024-02-18 2024-05-24 天合光能股份有限公司 背接触太阳能电池及其制备方法

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JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3174907B2 (ja) 1996-12-16 2001-06-11 株式会社ジーデイーエス 電荷信号均一化装置
JP2015062232A (ja) * 2010-03-04 2015-04-02 サンパワー コーポレイション バックコンタクトソーラーセルおよびソーラーセルの製造方法
US9406821B2 (en) 2010-03-04 2016-08-02 Sunpower Corporation Method of fabricating a back-contact solar cell and device thereof

Also Published As

Publication number Publication date
KR20170076814A (ko) 2017-07-04
CN106057934A (zh) 2016-10-26
CN102870225A (zh) 2013-01-09
US20140305501A1 (en) 2014-10-16
DE112010005344T5 (de) 2012-12-13
DE112010005344B4 (de) 2024-03-21
AU2010347232A1 (en) 2012-09-27
WO2011109058A3 (en) 2011-11-17
US9406821B2 (en) 2016-08-02
US20110214719A1 (en) 2011-09-08
US8790957B2 (en) 2014-07-29
KR20180066275A (ko) 2018-06-18
CN106057934B (zh) 2018-08-10
CN102870225B (zh) 2016-07-06
JP2015062232A (ja) 2015-04-02
KR20130004917A (ko) 2013-01-14
AU2010347232B2 (en) 2014-08-07
WO2011109058A2 (en) 2011-09-09
JP2013521645A (ja) 2013-06-10

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