CN106057934B - 背接触太阳能电池装置 - Google Patents
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- 239000002019 doping agent Substances 0.000 claims abstract description 122
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 37
- 238000000034 method Methods 0.000 abstract description 30
- 239000010410 layer Substances 0.000 description 141
- 238000005516 engineering process Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013047 polymeric layer Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
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Abstract
本发明描述了背接触太阳能电池的制造方法及其装置。用于制造背接触太阳能电池的方法包括在布置于衬底上方的材料层上方形成N型掺杂剂源层和P型掺杂剂源层。N型掺杂剂源层与P型掺杂剂源层隔开。对N型掺杂剂源层和P型掺杂剂源层进行加热。随后,在N型掺杂剂源层和P型掺杂剂源层之间在材料层中形成沟槽。
Description
本申请是基于申请日为2010年12月28日、申请号为201080066574.9(国际申请号为PCT/US2010/062264)、发明创造名称为“背接触太阳能电池的制造方法及其装置”的中国专利申请的分案申请。
相关申请的交叉引用
本申请要求于2010年3月4日提交的美国临时申请第61/310,655号的优先权,通过引用将其全部内容合并于此。
本申请所描述的发明是在美国能源部所授予的合同号DE-FC36-07GO17043的政府支持下创立的。在本发明中,该政府可以享有一定的权利。
技术领域
本发明的实施例涉及可再生能源领域,具体地,涉及背接触太阳能电池的制造方法及其装置。
背景技术
通常称为太阳能电池的光伏电池是用于将太阳辐射直接转换为电能的众所周知的装置。通常,使用半导体处理技术以在衬底的表面附近形成p-n结来在半导体晶片或衬底上制造太阳能电池。撞击在衬底表面上的太阳辐射在大部分衬底中产生电子和空穴对,该电子和空穴对迁移到衬底中的p掺杂区和n掺杂区,从而在这些掺杂区之间产生电压差。这些掺杂区连接至在太阳能电池上的金属触点,以将电流从太阳能电池引到耦接至太阳能电池的外部电路。
效率是太阳能电池的重要特性,因为它与太阳能电池的发电能力直接相关。因此,用于提高太阳能电池的效率的技术通常是人们所期望的。本发明的实施例允许通过提供用于制造新的太阳能电池结构的工艺来提高太阳能电池效率。
发明内容
附图说明
图1A示出了根据本发明实施例的背接触太阳能电池的制造过程中的阶段的截面视图。
图1B示出了根据本发明实施例的背接触太阳能电池的制造过程中的阶段的截面视图。
图1C示出了根据本发明实施例的背接触太阳能电池的制造过程中的阶段的截面视图。
图2A示出了根据本发明实施例的背接触太阳能电池的制造过程中的阶段的截面视图。
图2B示出了根据本发明实施例的背接触太阳能电池的制造过程中的阶段的截面视图。
图2C示出了根据本发明实施例的背接触太阳能电池的制造过程中的阶段的截面视图。
图2D示出了根据本发明实施例的背接触太阳能电池的制造过程中的阶段的截面视图。
图2E示出了根据本发明实施例的背接触太阳能电池的制造过程中的阶段的截面视图。
图3示出了根据本发明实施例的背接触太阳能电池的截面视图。
图4示出了表示在根据本发明实施例的用于制造背接触太阳能电池的方法中的操作的流程图。
图5A示出了根据本发明实施例的背接触太阳能电池的制造过程中与图4的流程图的操作402相对应的阶段的截面视图。
图5B示出了根据本发明实施例的背接触太阳能电池的制造过程中与图4的流程图的操作404相对应的阶段的截面视图。
图5C示出了根据本发明实施例的背接触太阳能电池的制造过程中与图4的流程图的操作406相对应的阶段的截面视图。
图5D示出了根据本发明实施例的背接触太阳能电池的制造过程中的附加阶段的截面视图。
图5E示出了根据本发明实施例的背接触太阳能电池的制造过程中的附加阶段的截面视图。
具体实施方式
在此描述背接触太阳能电池的制造方法及其装置。在以下描述中,阐述了诸如具体的工艺流程操作之类的大量具体细节,以便提供对本发明实施例的全面理解。显然,对于本领域技术人员而言,可以在没有这些具体细节的情况下实施本发明的实施例。在其它情况下,没有详细描述诸如光刻技术之类的众所周知的制造技术,以免不必要地模糊了本发明实施例。此外,应当理解,附图中所示的各种实施例是说明性的表示,而不一定按尺寸绘制。
在此公开的是用于制造背接触太阳能电池的方法。在一个实施例中,一种方法包括在布置于衬底上方的材料层上方形成N型掺杂剂源层和P型掺杂剂源层,N型掺杂剂源层与P型掺杂剂源层隔开。对N型掺杂剂源层和P型掺杂剂源层进行加热。随后,在N型掺杂剂源层和P型掺杂剂源层之间在材料层中形成沟槽。
在此还公开了背接触太阳能电池。在一个实施例中,一种背接触太阳能电池包括布置在衬底上方的材料层。在材料层中布置沟槽,该沟槽将材料层的N型区和P型区分开。P型区包括约等于P型区中心的掺杂剂浓度的与沟槽直接相邻的掺杂剂浓度。
根据本发明的至少一些实施例,以吸收层的N型区和P型区来形成太阳能电池,这些区不具有与以下结合附图2A-2E描述的“台缘(ledge)”特征形成的标记相关联的特征。与常规的工艺流程相比,在一些实施例中,通过使用在此描述的工艺流程来实现工艺操作的绝对数量的减少。在一些实施例中,即使在此描述的一些工艺流程包括附加的加热或退火操作,然而与常规流程相比,采用诸如在此详细描述的那些工艺流程之类的工艺流程仍会是优选的。
在本发明的一方面中,可以期望形成具有P型吸收层区和N型吸收层区而不具有台缘特征所产生的标记的太阳能电池。图1A至图1C示出了根据本发明实施例的背接触太阳能电池的制造过程中的各个阶段的截面视图。应当理解的是,图1A至图1C的操作并不意在施加任何一种工艺顺序,而是要从这些附图的以下讨论中收集若干高层次概念。在图1A至图1C之后是更详细的方法。
参考图1A,一种用于制造背接触太阳能电池的方法包括在布置于衬底102A上方的材料层104A上方形成N型掺杂剂源层108和P型掺杂剂源层106。N型掺杂剂源层108与P型掺杂剂源层106隔开,如图1A所示。还示出了隧道氧化物阻挡层膜110。
参考图1B,该用于制造背接触太阳能电池的方法还包括在N型掺杂剂源层108和P型掺杂剂源层106之间,形成分别穿过材料层104A和部分进入衬底102A的沟槽112,以分别提供图案化的材料层104B和图案化的衬底102B。
参考图1C,N型掺杂剂和P型掺杂剂分别从N型掺杂剂源层108和P型掺杂剂源层106扩散到图案化的材料层104B中,以在图案化的衬底102B上方分别提供N型掺杂材料层区104C和P型掺杂材料层区104D。根据本发明的实施例,N型掺杂材料层区104C和P型掺杂材料层区104D均匀掺杂,使得N型掺杂材料层区104C和P型掺杂材料层区104D的每一个中最接近沟槽112的掺杂剂浓度与N型掺杂材料层区104C和P型掺杂材料层区104D的中心附近的掺杂剂浓度近似相同。
然而,应当理解的是,并不是形成太阳能电池的每个方法都避免在太阳能电池的吸收层的P型区或N型区中性台缘特征的标记。例如,图2A至图2E示出了根据本发明实施例的背接触太阳能电池的制造过程中的各个阶段的截面视图,并且提供图2A至图2E以作为用于与下面的图3、图4和图5A至图5E相关的详细讨论的比较。
参考图2A,用于制造背接触太阳能电池的方法包括将N型掺杂剂源层202形成在图案化的P型掺杂剂源层204上方,以及形成在布置于衬底208上方的材料层206的暴露部分上方。将掩膜210布置在N型掺杂剂源层202上方使得其中包括沟槽图案212。还示出了隧道氧化物阻挡层膜214。
参考图2B,与掩膜210对准地对N型掺杂剂源层202和图案化的P型掺杂剂源层204进行蚀刻,以提供将P型掺杂剂源层204从直接置于材料层206上方的N型掺杂剂源层202部分隔开的构造,如图2B所示。然而,图案化的P型掺杂剂源层204可能包括锥形侧壁216,锥形侧壁216可能由在蚀刻工艺期间部分掩膜210的剥离218和/或掩膜210的底切而不期望地产生,如图2B所示。
参考图2C,进一步的处理包括使用图案化的P型掺杂剂源层204和N型掺杂剂源层202的剩余部分作为蚀刻掩膜,来移除掩膜210以及穿过材料层206和部分进入衬底208而形成沟槽222。然而,如图2C所示,在蚀刻工艺期间,图案化的P型掺杂剂源层204的剩余部分可能从材料层206部分直接与沟槽222相邻的边缘凹进去。这可能导致形成材料层206的暴露部分224,暴露部分224没有被图案化的P型掺杂剂源层204的剩余部分覆盖。在此,将材料层206没有被图案化的P型掺杂剂源层204的剩余部分覆盖的暴露部分224称为“台缘”特征,其具有宽度X,对于进一步的处理而言该特征可能是不期望的特征。
参考图2D,对图2C的结构进行加热或退火以使掺杂剂从层202和层204扩散到材料层206中,以提供N型掺杂材料区226和P型掺杂材料区228。然而,材料层206没有被图案化的P型掺杂剂源层204的剩余部分覆盖的暴露部分224(例如,上述的台缘)可能比P型掺杂材料区228的其余部分具有较小的掺杂剂浓度,这是因为层204从材料层206的边缘凹进去。在掺杂过程中,P型掺杂材料区228的端部比P型掺杂材料区228的其余部分具有较低的掺杂剂浓度的这种变化,可能对由此最终形成的太阳能电池的性能产生负面的影响。应当注意的是,在上述的加热或退火期间,由于气态掺杂剂前体而可以在衬底208中形成N型掺杂区230,如图2D所示。
参考图2E,将层204和层202移除后的太阳能电池232部分仍然保留台缘特征的标记,即,P型掺杂材料区228的部分224。在一个实施例中,部分224对由此制造完成的太阳能电池具有负面的影响。
在本发明的一方面,背接触太阳能电池可以不包括台缘特征的标记。例如,图3示出了根据本发明一个实施例的背接触太阳能电池的截面视图。
参考图3,背接触太阳能电池300包括布置在衬底304上方的材料层302。沟槽306布置在材料层302中。沟槽306将材料层302的N型区308和P型区310分离。P型区310包括约等于P型区310中心的掺杂剂浓度314的与沟槽306直接相邻的掺杂剂浓度312。即,在P型区310中没有台缘特征。
根据本发明的一个实施例,背接触太阳能电池300的材料层302是多晶硅(poly-crystalline silicon)层,衬底304是单晶硅衬底,P型区310包括硼掺杂剂杂质原子,并且N型区包括磷掺杂剂杂质原子。在一个可替换的实施例中,代替形成聚晶材料层302,而形成诸如但不限于非晶层、聚合物层或多晶(multi-crystalline)层之类的非聚晶吸收材料。在另一个可替换的实施例中,代替使用单晶衬底304,而使用多晶衬底。
在一个实施例中,将背接触太阳能电池300的沟槽306布置成完全穿过材料层302并且部分进入衬底304中,如图3所示。在一个实施例中,衬底304没有被材料层302覆盖的表面包括具有纹理的表面316,如图3所示。在一个实施例中,背接触太阳能电池300的衬底304在衬底304没有被材料层302覆盖的表面处或附近包括N型掺杂剂318,如图3所示。
根据本发明的另一个实施例,背接触太阳能电池300还包括直接布置在材料层302和衬底304之间的电介质膜320,如图3所示。在一个实施例中,电介质膜320由二氧化硅组成并且具有约在1至2纳米的范围内的厚度。在一个具体实施例中,电介质膜320是隧道氧化物阻挡层膜。
在本发明的另一方面,可以制造背接触太阳能电池而不包括台缘特征。例如,图4示出了表示在根据本发明实施例的用于制造背接触太阳能电池的方法中的操作的流程图400。图5A至图5C示出了根据本发明实施例的背接触太阳能电池的制造过程中与流程图400的各个操作相对应的各个阶段的截面视图。图5D和图5E示出了根据本发明实施例的背接触太阳能电池的制造过程中的各个附加阶段的截面视图。
参考流程图400的操作402以及相应的图5A,用于制造背接触太阳能电池的方法包括在布置于衬底508上方的材料层506上方形成N型掺杂剂源层502和P型掺杂剂源层504。N型掺杂剂源层502与P型掺杂剂源层504隔开,如图5A所示。
根据本发明的一个实施例,形成N型掺杂剂源层502和P型掺杂剂源层504包括使用喷墨沉积技术。在一个实施例中,使用喷墨沉积技术包括同时形成N型掺杂剂源层502和P型掺杂剂源层504。在另一个实施例中,使用喷墨沉积技术包括在不同的时间形成N型掺杂剂源层502和P型掺杂剂源层504。在一个实施例中,在布置于衬底508上方的材料层506上方形成N型掺杂剂源层502和P型掺杂剂源层504包括直接在布置于单晶硅衬底上方的多晶硅层上分别形成磷掺杂硅酸盐玻璃层和硼掺杂硅酸盐玻璃层。在一个可替换的实施例中,代替形成聚晶材料层506,而形成诸如但不限于非晶层、聚合物层或多晶层之类的非聚晶吸收材料。在另一个可替换的实施例中,代替使用单晶衬底508,而使用多晶衬底。
在本发明的一个实施例中,直接在材料层506的下面并且直接在衬底508的上面形成电介质膜510,如图5A所示。在一个实施例中,电介质膜510由二氧化硅组成并且具有约在1至2纳米的范围内的厚度。在一个具体实施例中,电介质膜510是隧道氧化物阻挡层膜。
参考流程图400的操作404以及相应的图5B,用于制造背接触太阳能电池的方法还包括对N型掺杂剂源层502和P型掺杂剂源层504进行加热。
根据本发明的一个实施例,对N型掺杂剂源层502和P型掺杂剂源层504进行加热包括分别将N型掺杂剂和P型掺杂剂转移到材料层506的部分512和部分514中,如图5B所示。在一个实施例中,对N型掺杂剂源层502和P型掺杂剂源层504进行加热包括以约950摄氏度的温度进行加热。在一个实施例中,对N型掺杂剂源层502和P型掺杂剂源层504进行加热包括对N型掺杂剂源层502和P型掺杂剂源层504两者进行硬化。在一个具体实施例中,对N型掺杂剂源层502和P型掺杂剂源层504两者进行硬化在后续沟槽形成(比如以下描述的沟槽形成)期间提高了N型掺杂剂源层502和P型掺杂剂源层504的耐蚀刻性。
参考流程图400的操作406以及相应的图5C,用于制造背接触太阳能电池的方法还包括在操作404的加热之后,在N型掺杂剂源层502和P型掺杂剂源层504之间,在材料层506中形成沟槽516。
根据本发明的一个实施例,在材料层506中形成沟槽516包括完全穿过材料层506并且部分进入衬底508而形成沟槽,沟槽516具有约等于N型掺杂剂源层502和P型掺杂剂源层504的间隔的宽度,如图5C所示。在一个实施例中,形成沟槽516包括利用具有纹理的表面518使衬底508没有被材料层506覆盖的表面具有纹理,如图5C所示。在一个具体实施例中,使表面具有纹理的过程包括使用包括基于氢氧化物的湿蚀刻剂的湿蚀刻技术。
在一个实施例中,参考图5D,用于制造背接触太阳能电池的方法还包括在形成沟槽516之后,移除N型掺杂剂源层502和P型掺杂剂源层504。在一个实施例中,移除N型掺杂剂源层502和P型掺杂剂源层504包括使用氢氟酸湿蚀刻技术。
在一个实施例中,参考图5E,用于制造背接触太阳能电池的方法还包括在移除N型掺杂剂源层502和P型掺杂剂源层504之后,对衬底508进行加热。在一个实施例中,对衬底508进行加热包括:在衬底508没有被材料层506覆盖的表面处或附近,在存在气态N型掺杂剂源的情况下对衬底508进行加热并且利用气态N型掺杂剂源对衬底508进行掺杂,如图5E的掺杂剂区520所示。
这样,已经公开了背接触太阳能电池的制造方法及其装置。根据本发明的一个实施例,用于制造背接触太阳能电池的方法包括在布置于衬底上方的材料层上方形成N型掺杂剂源层和P型掺杂剂源层。N型掺杂剂源层与P型掺杂剂源层隔开。对N型掺杂剂源层和P型掺杂剂源层进行加热。随后,在N型掺杂剂源层和P型掺杂剂源层之间在材料层中形成沟槽。在一个附加实施例中,在形成沟槽之后,移除N型掺杂剂源层和P型掺杂剂源层。在另一个附加实施例中,在移除N型掺杂剂源层和P型掺杂剂源层之后,对衬底进行加热。
Claims (5)
1.一种背接触太阳能电池,包括:
材料层,其布置于衬底上方;以及
沟槽,其布置在所述材料层中,该沟槽将所述材料层的N型区和P型区分离,通过以下步骤来使得该P型区包括实质上等于该P型区中心的掺杂剂浓度的与所述沟槽直接相邻的掺杂剂浓度:
在布置于衬底上方的材料层上方形成N型掺杂剂源层和P型掺杂剂源层,N型掺杂剂源层与P型掺杂剂源层隔开;
对N型掺杂剂源层和P型掺杂剂源层进行加热;
在N型掺杂剂源层和P型掺杂剂源层之间在材料层中形成沟槽,其中沟槽的宽度等于N型掺杂剂源层和P型掺杂剂源层的间隔,
其中,所述沟槽布置成完全地穿过所述材料层并且部分地进入所述衬底中。
2.如权利要求1所述的背接触太阳能电池,其中,所述材料层是多晶硅层,所述衬底是单晶硅衬底,所述P型区包括硼掺杂剂杂质原子,并且所述N型区包括磷掺杂剂杂质原子。
3.如权利要求1所述的背接触太阳能电池,其中,所述衬底没有被所述材料层覆盖的表面包括纹理化表面。
4.如权利要求1所述的背接触太阳能电池,其中,在所述衬底没有被所述材料层覆盖的表面处或表面附近处,所述衬底包括N型掺杂剂。
5.如权利要求1所述的背接触太阳能电池,还包括:
电介质膜,其直接布置在所述材料层和所述衬底之间。
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AU2010347232A1 (en) | 2012-09-27 |
DE112010005344T5 (de) | 2012-12-13 |
JP5637640B2 (ja) | 2014-12-10 |
CN102870225A (zh) | 2013-01-09 |
KR20170076814A (ko) | 2017-07-04 |
US9406821B2 (en) | 2016-08-02 |
WO2011109058A3 (en) | 2011-11-17 |
JP2013521645A (ja) | 2013-06-10 |
US20110214719A1 (en) | 2011-09-08 |
US8790957B2 (en) | 2014-07-29 |
AU2010347232B2 (en) | 2014-08-07 |
KR20130004917A (ko) | 2013-01-14 |
US20140305501A1 (en) | 2014-10-16 |
KR20180066275A (ko) | 2018-06-18 |
CN102870225B (zh) | 2016-07-06 |
CN106057934A (zh) | 2016-10-26 |
WO2011109058A2 (en) | 2011-09-09 |
JP2015062232A (ja) | 2015-04-02 |
DE112010005344B4 (de) | 2024-03-21 |
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