JP2013521645A5 - - Google Patents
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- JP2013521645A5 JP2013521645A5 JP2012556055A JP2012556055A JP2013521645A5 JP 2013521645 A5 JP2013521645 A5 JP 2013521645A5 JP 2012556055 A JP2012556055 A JP 2012556055A JP 2012556055 A JP2012556055 A JP 2012556055A JP 2013521645 A5 JP2013521645 A5 JP 2013521645A5
- Authority
- JP
- Japan
- Prior art keywords
- type dopant
- dopant source
- source layer
- layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 claims description 80
- 239000000463 material Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 239000005368 silicate glass Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31065510P | 2010-03-04 | 2010-03-04 | |
| US61/310,655 | 2010-03-04 | ||
| US12/972,247 US8790957B2 (en) | 2010-03-04 | 2010-12-17 | Method of fabricating a back-contact solar cell and device thereof |
| US12/972,247 | 2010-12-17 | ||
| PCT/US2010/062264 WO2011109058A2 (en) | 2010-03-04 | 2010-12-28 | Method of fabricating a back-contact solar cell and device thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014213291A Division JP2015062232A (ja) | 2010-03-04 | 2014-10-20 | バックコンタクトソーラーセルおよびソーラーセルの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013521645A JP2013521645A (ja) | 2013-06-10 |
| JP2013521645A5 true JP2013521645A5 (https=) | 2013-11-21 |
| JP5637640B2 JP5637640B2 (ja) | 2014-12-10 |
Family
ID=44530256
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012556055A Active JP5637640B2 (ja) | 2010-03-04 | 2010-12-28 | バックコンタクトソーラーセルの製造方法 |
| JP2014213291A Pending JP2015062232A (ja) | 2010-03-04 | 2014-10-20 | バックコンタクトソーラーセルおよびソーラーセルの製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014213291A Pending JP2015062232A (ja) | 2010-03-04 | 2014-10-20 | バックコンタクトソーラーセルおよびソーラーセルの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8790957B2 (https=) |
| JP (2) | JP5637640B2 (https=) |
| KR (3) | KR20170076814A (https=) |
| CN (2) | CN102870225B (https=) |
| AU (1) | AU2010347232B2 (https=) |
| DE (1) | DE112010005344B4 (https=) |
| WO (1) | WO2011109058A2 (https=) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652434A (ja) * | 1992-07-28 | 1994-02-25 | Murata Mfg Co Ltd | カップベンダー吐出ノズル |
| JP3174907B2 (ja) | 1996-12-16 | 2001-06-11 | 株式会社ジーデイーエス | 電荷信号均一化装置 |
| US8790957B2 (en) * | 2010-03-04 | 2014-07-29 | Sunpower Corporation | Method of fabricating a back-contact solar cell and device thereof |
| US10011920B2 (en) | 2011-02-23 | 2018-07-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
| US8586397B2 (en) * | 2011-09-30 | 2013-11-19 | Sunpower Corporation | Method for forming diffusion regions in a silicon substrate |
| US9202965B2 (en) * | 2011-12-16 | 2015-12-01 | Jusung Engineering Co., Ltd. | Method for manufacturing solar cell |
| US20130247967A1 (en) * | 2012-03-23 | 2013-09-26 | Scott Harrington | Gaseous ozone (o3) treatment for solar cell fabrication |
| US9059212B2 (en) | 2012-10-31 | 2015-06-16 | International Business Machines Corporation | Back-end transistors with highly doped low-temperature contacts |
| US20140130854A1 (en) * | 2012-11-12 | 2014-05-15 | Samsung Sdi Co., Ltd. | Photoelectric device and the manufacturing method thereof |
| US8912071B2 (en) | 2012-12-06 | 2014-12-16 | International Business Machines Corporation | Selective emitter photovoltaic device |
| US8642378B1 (en) * | 2012-12-18 | 2014-02-04 | International Business Machines Corporation | Field-effect inter-digitated back contact photovoltaic device |
| US9236509B2 (en) * | 2013-04-24 | 2016-01-12 | Natcore Technology, Inc. | Solar cells with patterned antireflective surfaces |
| TW201442261A (zh) * | 2013-04-30 | 2014-11-01 | Terasolar Energy Materials Corp | 矽晶太陽能電池的製造方法以及矽晶太陽能電池 |
| JP6114170B2 (ja) * | 2013-12-05 | 2017-04-12 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| US9401450B2 (en) * | 2013-12-09 | 2016-07-26 | Sunpower Corporation | Solar cell emitter region fabrication using ion implantation |
| US9837259B2 (en) | 2014-08-29 | 2017-12-05 | Sunpower Corporation | Sequential etching treatment for solar cell fabrication |
| US9246046B1 (en) * | 2014-09-26 | 2016-01-26 | Sunpower Corporation | Etching processes for solar cell fabrication |
| US11355657B2 (en) * | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
| NL2015534B1 (en) * | 2015-09-30 | 2017-05-10 | Tempress Ip B V | Method of manufacturing a solar cell. |
| US9607847B1 (en) * | 2015-12-18 | 2017-03-28 | Texas Instruments Incorporated | Enhanced lateral cavity etch |
| US10217878B2 (en) | 2016-04-01 | 2019-02-26 | Sunpower Corporation | Tri-layer semiconductor stacks for patterning features on solar cells |
| USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
| FR3058264B1 (fr) * | 2016-10-28 | 2020-10-02 | Commissariat Energie Atomique | Procede de fabrication de cellules photovoltaiques a contacts arriere. |
| WO2018092189A1 (ja) | 2016-11-15 | 2018-05-24 | 信越化学工業株式会社 | 高光電変換効率太陽電池、その製造方法、太陽電池モジュール及び太陽光発電システム |
| US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
| USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
| USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
| USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
| USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
| USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
| USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
| USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
| USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
| USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
| FR3112427A1 (fr) * | 2020-07-13 | 2022-01-14 | Semco Smartech France | Formation de contacts passivés pour cellules solaires IBC |
| EP3982421A1 (en) | 2020-10-09 | 2022-04-13 | International Solar Energy Research Center Konstanz E.V. | Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivating contact solar cells and thus-created solar cell |
| CN118738214A (zh) * | 2021-09-30 | 2024-10-01 | 泰州隆基乐叶光伏科技有限公司 | 一种背接触电池及其制作方法 |
| EP4195299A1 (en) | 2021-12-13 | 2023-06-14 | International Solar Energy Research Center Konstanz E.V. | Interdigitated back contact solar cell and method for producing an interdigitated back contact solar cell |
| CN117727810A (zh) * | 2023-12-14 | 2024-03-19 | 浙江晶科能源有限公司 | 太阳能电池及其制造方法、光伏组件 |
| CN118073471A (zh) * | 2024-02-18 | 2024-05-24 | 天合光能股份有限公司 | 背接触太阳能电池及其制备方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5057439A (en) * | 1990-02-12 | 1991-10-15 | Electric Power Research Institute | Method of fabricating polysilicon emitters for solar cells |
| JPH11177046A (ja) | 1997-12-09 | 1999-07-02 | Toshiba Corp | 半導体装置及びその製造方法並びにキャパシタの製造方法 |
| US5888309A (en) | 1997-12-29 | 1999-03-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma |
| US6287961B1 (en) | 1999-01-04 | 2001-09-11 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method without etch stop layer |
| JP2005064014A (ja) * | 2003-08-11 | 2005-03-10 | Sharp Corp | 薄膜結晶太陽電池およびその製造方法 |
| DE102004050269A1 (de) | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
| US7799371B2 (en) * | 2005-11-17 | 2010-09-21 | Palo Alto Research Center Incorporated | Extruding/dispensing multiple materials to form high-aspect ratio extruded structures |
| AU2006335142B2 (en) * | 2005-12-21 | 2011-09-22 | Sunpower Corporation | Back side contact solar cell structures and fabrication processes |
| KR101212198B1 (ko) * | 2006-04-06 | 2012-12-13 | 삼성에스디아이 주식회사 | 태양 전지 |
| US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
| US20080000522A1 (en) * | 2006-06-30 | 2008-01-03 | General Electric Company | Photovoltaic device which includes all-back-contact configuration; and related processes |
| US7928015B2 (en) * | 2006-12-12 | 2011-04-19 | Palo Alto Research Center Incorporated | Solar cell fabrication using extruded dopant-bearing materials |
| CN101743640B (zh) * | 2007-07-26 | 2012-12-19 | 康斯坦茨大学 | 具有回蚀刻发射极的硅太阳能电池的制造方法和相应的太阳能电池 |
| JP5236914B2 (ja) * | 2007-09-19 | 2013-07-17 | シャープ株式会社 | 太陽電池の製造方法 |
| US8349644B2 (en) * | 2007-10-18 | 2013-01-08 | e-Cube Energy Technologies, Ltd. | Mono-silicon solar cells |
| US7851698B2 (en) | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
| KR101472018B1 (ko) * | 2008-10-13 | 2014-12-15 | 엘지전자 주식회사 | 후면전극 태양전지 및 그 제조방법 |
| US8790957B2 (en) | 2010-03-04 | 2014-07-29 | Sunpower Corporation | Method of fabricating a back-contact solar cell and device thereof |
-
2010
- 2010-12-17 US US12/972,247 patent/US8790957B2/en active Active
- 2010-12-28 WO PCT/US2010/062264 patent/WO2011109058A2/en not_active Ceased
- 2010-12-28 AU AU2010347232A patent/AU2010347232B2/en active Active
- 2010-12-28 KR KR1020177017550A patent/KR20170076814A/ko not_active Ceased
- 2010-12-28 JP JP2012556055A patent/JP5637640B2/ja active Active
- 2010-12-28 CN CN201080066574.9A patent/CN102870225B/zh active Active
- 2010-12-28 CN CN201610392906.1A patent/CN106057934B/zh active Active
- 2010-12-28 KR KR1020127025955A patent/KR20130004917A/ko not_active Ceased
- 2010-12-28 KR KR1020187016046A patent/KR20180066275A/ko not_active Ceased
- 2010-12-28 DE DE112010005344.8T patent/DE112010005344B4/de active Active
-
2014
- 2014-06-25 US US14/314,938 patent/US9406821B2/en active Active
- 2014-10-20 JP JP2014213291A patent/JP2015062232A/ja active Pending
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