CN102870225B - 背接触太阳能电池的制造方法 - Google Patents

背接触太阳能电池的制造方法 Download PDF

Info

Publication number
CN102870225B
CN102870225B CN201080066574.9A CN201080066574A CN102870225B CN 102870225 B CN102870225 B CN 102870225B CN 201080066574 A CN201080066574 A CN 201080066574A CN 102870225 B CN102870225 B CN 102870225B
Authority
CN
China
Prior art keywords
type dopant
dopant source
source layer
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201080066574.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN102870225A (zh
Inventor
李波
大卫·史密斯
彼得·卡曾斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maikesheng Solar Energy Co ltd
Original Assignee
SunPower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunPower Corp filed Critical SunPower Corp
Priority to CN201610392906.1A priority Critical patent/CN106057934B/zh
Publication of CN102870225A publication Critical patent/CN102870225A/zh
Application granted granted Critical
Publication of CN102870225B publication Critical patent/CN102870225B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201080066574.9A 2010-03-04 2010-12-28 背接触太阳能电池的制造方法 Active CN102870225B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610392906.1A CN106057934B (zh) 2010-03-04 2010-12-28 背接触太阳能电池装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US31065510P 2010-03-04 2010-03-04
US61/310,655 2010-03-04
US12/972,247 US8790957B2 (en) 2010-03-04 2010-12-17 Method of fabricating a back-contact solar cell and device thereof
US12/972,247 2010-12-17
PCT/US2010/062264 WO2011109058A2 (en) 2010-03-04 2010-12-28 Method of fabricating a back-contact solar cell and device thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610392906.1A Division CN106057934B (zh) 2010-03-04 2010-12-28 背接触太阳能电池装置

Publications (2)

Publication Number Publication Date
CN102870225A CN102870225A (zh) 2013-01-09
CN102870225B true CN102870225B (zh) 2016-07-06

Family

ID=44530256

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201080066574.9A Active CN102870225B (zh) 2010-03-04 2010-12-28 背接触太阳能电池的制造方法
CN201610392906.1A Active CN106057934B (zh) 2010-03-04 2010-12-28 背接触太阳能电池装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610392906.1A Active CN106057934B (zh) 2010-03-04 2010-12-28 背接触太阳能电池装置

Country Status (7)

Country Link
US (2) US8790957B2 (https=)
JP (2) JP5637640B2 (https=)
KR (3) KR20170076814A (https=)
CN (2) CN102870225B (https=)
AU (1) AU2010347232B2 (https=)
DE (1) DE112010005344B4 (https=)
WO (1) WO2011109058A2 (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652434A (ja) * 1992-07-28 1994-02-25 Murata Mfg Co Ltd カップベンダー吐出ノズル
JP3174907B2 (ja) 1996-12-16 2001-06-11 株式会社ジーデイーエス 電荷信号均一化装置
US8790957B2 (en) * 2010-03-04 2014-07-29 Sunpower Corporation Method of fabricating a back-contact solar cell and device thereof
US10011920B2 (en) 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
US8586397B2 (en) * 2011-09-30 2013-11-19 Sunpower Corporation Method for forming diffusion regions in a silicon substrate
US9202965B2 (en) * 2011-12-16 2015-12-01 Jusung Engineering Co., Ltd. Method for manufacturing solar cell
US20130247967A1 (en) * 2012-03-23 2013-09-26 Scott Harrington Gaseous ozone (o3) treatment for solar cell fabrication
US9059212B2 (en) 2012-10-31 2015-06-16 International Business Machines Corporation Back-end transistors with highly doped low-temperature contacts
US20140130854A1 (en) * 2012-11-12 2014-05-15 Samsung Sdi Co., Ltd. Photoelectric device and the manufacturing method thereof
US8912071B2 (en) 2012-12-06 2014-12-16 International Business Machines Corporation Selective emitter photovoltaic device
US8642378B1 (en) * 2012-12-18 2014-02-04 International Business Machines Corporation Field-effect inter-digitated back contact photovoltaic device
US9236509B2 (en) * 2013-04-24 2016-01-12 Natcore Technology, Inc. Solar cells with patterned antireflective surfaces
TW201442261A (zh) * 2013-04-30 2014-11-01 Terasolar Energy Materials Corp 矽晶太陽能電池的製造方法以及矽晶太陽能電池
JP6114170B2 (ja) * 2013-12-05 2017-04-12 信越化学工業株式会社 太陽電池の製造方法
US9401450B2 (en) * 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US9837259B2 (en) 2014-08-29 2017-12-05 Sunpower Corporation Sequential etching treatment for solar cell fabrication
US9246046B1 (en) * 2014-09-26 2016-01-26 Sunpower Corporation Etching processes for solar cell fabrication
US11355657B2 (en) * 2015-03-27 2022-06-07 Sunpower Corporation Metallization of solar cells with differentiated p-type and n-type region architectures
NL2015534B1 (en) * 2015-09-30 2017-05-10 Tempress Ip B V Method of manufacturing a solar cell.
US9607847B1 (en) * 2015-12-18 2017-03-28 Texas Instruments Incorporated Enhanced lateral cavity etch
US10217878B2 (en) 2016-04-01 2019-02-26 Sunpower Corporation Tri-layer semiconductor stacks for patterning features on solar cells
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
FR3058264B1 (fr) * 2016-10-28 2020-10-02 Commissariat Energie Atomique Procede de fabrication de cellules photovoltaiques a contacts arriere.
WO2018092189A1 (ja) 2016-11-15 2018-05-24 信越化学工業株式会社 高光電変換効率太陽電池、その製造方法、太陽電池モジュール及び太陽光発電システム
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
FR3112427A1 (fr) * 2020-07-13 2022-01-14 Semco Smartech France Formation de contacts passivés pour cellules solaires IBC
EP3982421A1 (en) 2020-10-09 2022-04-13 International Solar Energy Research Center Konstanz E.V. Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivating contact solar cells and thus-created solar cell
CN118738214A (zh) * 2021-09-30 2024-10-01 泰州隆基乐叶光伏科技有限公司 一种背接触电池及其制作方法
EP4195299A1 (en) 2021-12-13 2023-06-14 International Solar Energy Research Center Konstanz E.V. Interdigitated back contact solar cell and method for producing an interdigitated back contact solar cell
CN117727810A (zh) * 2023-12-14 2024-03-19 浙江晶科能源有限公司 太阳能电池及其制造方法、光伏组件
CN118073471A (zh) * 2024-02-18 2024-05-24 天合光能股份有限公司 背接触太阳能电池及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101443893A (zh) * 2005-12-21 2009-05-27 太阳能公司 背面触点太阳能电池及制造方法
US20090308457A1 (en) * 2008-06-12 2009-12-17 Smith David D Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
JPH11177046A (ja) 1997-12-09 1999-07-02 Toshiba Corp 半導体装置及びその製造方法並びにキャパシタの製造方法
US5888309A (en) 1997-12-29 1999-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma
US6287961B1 (en) 1999-01-04 2001-09-11 Taiwan Semiconductor Manufacturing Company Dual damascene patterned conductor layer formation method without etch stop layer
JP2005064014A (ja) * 2003-08-11 2005-03-10 Sharp Corp 薄膜結晶太陽電池およびその製造方法
DE102004050269A1 (de) 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
US7799371B2 (en) * 2005-11-17 2010-09-21 Palo Alto Research Center Incorporated Extruding/dispensing multiple materials to form high-aspect ratio extruded structures
KR101212198B1 (ko) * 2006-04-06 2012-12-13 삼성에스디아이 주식회사 태양 전지
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US20080000522A1 (en) * 2006-06-30 2008-01-03 General Electric Company Photovoltaic device which includes all-back-contact configuration; and related processes
US7928015B2 (en) * 2006-12-12 2011-04-19 Palo Alto Research Center Incorporated Solar cell fabrication using extruded dopant-bearing materials
CN101743640B (zh) * 2007-07-26 2012-12-19 康斯坦茨大学 具有回蚀刻发射极的硅太阳能电池的制造方法和相应的太阳能电池
JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法
US8349644B2 (en) * 2007-10-18 2013-01-08 e-Cube Energy Technologies, Ltd. Mono-silicon solar cells
KR101472018B1 (ko) * 2008-10-13 2014-12-15 엘지전자 주식회사 후면전극 태양전지 및 그 제조방법
US8790957B2 (en) 2010-03-04 2014-07-29 Sunpower Corporation Method of fabricating a back-contact solar cell and device thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101443893A (zh) * 2005-12-21 2009-05-27 太阳能公司 背面触点太阳能电池及制造方法
US20090308457A1 (en) * 2008-06-12 2009-12-17 Smith David D Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions

Also Published As

Publication number Publication date
KR20170076814A (ko) 2017-07-04
CN106057934A (zh) 2016-10-26
CN102870225A (zh) 2013-01-09
US20140305501A1 (en) 2014-10-16
DE112010005344T5 (de) 2012-12-13
DE112010005344B4 (de) 2024-03-21
JP5637640B2 (ja) 2014-12-10
AU2010347232A1 (en) 2012-09-27
WO2011109058A3 (en) 2011-11-17
US9406821B2 (en) 2016-08-02
US20110214719A1 (en) 2011-09-08
US8790957B2 (en) 2014-07-29
KR20180066275A (ko) 2018-06-18
CN106057934B (zh) 2018-08-10
JP2015062232A (ja) 2015-04-02
KR20130004917A (ko) 2013-01-14
AU2010347232B2 (en) 2014-08-07
WO2011109058A2 (en) 2011-09-09
JP2013521645A (ja) 2013-06-10

Similar Documents

Publication Publication Date Title
CN102870225B (zh) 背接触太阳能电池的制造方法
US8492253B2 (en) Method of forming contacts for a back-contact solar cell
US8912038B2 (en) Method of forming emitters for a back-contact solar cell
JP6552011B2 (ja) イオン注入を使用した太陽電池のエミッタ領域の製造
JP2014527297A (ja) 異なってドープされた領域のパターンの形成方法
KR101160116B1 (ko) 후면 접합 태양전지의 제조방법
CN113948589A (zh) 一种p型电池及其制作方法
KR101375781B1 (ko) 나노 및 마이크로 실리콘 복합 구조체의 sod 도핑과 패시베이션 공정을 통한 캐리어 수명이 향상된 태양 전지의 제조 방법 및 이에 따른 태양 전지

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20220822

Address after: Singapore, Singapore City

Patentee after: Maikesheng solar energy Co.,Ltd.

Address before: California, USA

Patentee before: SUNPOWER Corp.

TR01 Transfer of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Manufacturing method of back contact solar cells

Granted publication date: 20160706

Pledgee: Deutsche Trust (Hong Kong) Ltd.

Pledgor: Maikesheng solar energy Co.,Ltd.

Registration number: Y2024990000329

PE01 Entry into force of the registration of the contract for pledge of patent right