JP5636304B2 - 薄膜トランジスタ回路基板及びその製造方法 - Google Patents

薄膜トランジスタ回路基板及びその製造方法 Download PDF

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JP5636304B2
JP5636304B2 JP2011025072A JP2011025072A JP5636304B2 JP 5636304 B2 JP5636304 B2 JP 5636304B2 JP 2011025072 A JP2011025072 A JP 2011025072A JP 2011025072 A JP2011025072 A JP 2011025072A JP 5636304 B2 JP5636304 B2 JP 5636304B2
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thin film
oxide semiconductor
insulating film
semiconductor thin
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JP2012164873A5 (cg-RX-API-DMAC7.html
JP2012164873A (ja
Inventor
哲弥 柴田
哲弥 柴田
創 渡壁
創 渡壁
佐々木　厚
厚 佐々木
松浦　由紀
由紀 松浦
宗治 秋吉
宗治 秋吉
洋之 渡邊
洋之 渡邊
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Japan Display Inc
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Japan Display Inc
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Priority to JP2011025072A priority Critical patent/JP5636304B2/ja
Priority to US13/329,545 priority patent/US8710498B2/en
Publication of JP2012164873A publication Critical patent/JP2012164873A/ja
Publication of JP2012164873A5 publication Critical patent/JP2012164873A5/ja
Priority to US14/206,858 priority patent/US9123588B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
JP2011025072A 2011-02-08 2011-02-08 薄膜トランジスタ回路基板及びその製造方法 Active JP5636304B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011025072A JP5636304B2 (ja) 2011-02-08 2011-02-08 薄膜トランジスタ回路基板及びその製造方法
US13/329,545 US8710498B2 (en) 2011-02-08 2011-12-19 Display device and method of manufacturing the same
US14/206,858 US9123588B2 (en) 2011-02-08 2014-03-12 Thin-film transistor circuit substrate and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011025072A JP5636304B2 (ja) 2011-02-08 2011-02-08 薄膜トランジスタ回路基板及びその製造方法

Publications (3)

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JP2012164873A JP2012164873A (ja) 2012-08-30
JP2012164873A5 JP2012164873A5 (cg-RX-API-DMAC7.html) 2013-08-01
JP5636304B2 true JP5636304B2 (ja) 2014-12-03

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US (2) US8710498B2 (cg-RX-API-DMAC7.html)
JP (1) JP5636304B2 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5636304B2 (ja) * 2011-02-08 2014-12-03 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板及びその製造方法
JP2014229814A (ja) 2013-05-24 2014-12-08 ソニー株式会社 薄膜トランジスタ、表示装置および電子機器
CN104218094B (zh) * 2014-08-28 2016-11-23 京东方科技集团股份有限公司 一种薄膜晶体管、显示基板及显示装置
CN105140237B (zh) * 2015-08-04 2018-06-12 武汉华星光电技术有限公司 阵列基板及其制备方法以及液晶显示器
WO2017029576A1 (en) * 2015-08-19 2017-02-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP6878173B2 (ja) * 2017-06-26 2021-05-26 株式会社ジャパンディスプレイ 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3211302B2 (ja) * 1991-11-07 2001-09-25 カシオ計算機株式会社 窒化シリコン膜
JPH0641751A (ja) * 1992-07-27 1994-02-15 Nippon Telegr & Teleph Corp <Ntt> 光学薄膜材料の製造方法
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP5015471B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
JP2009042255A (ja) * 2007-08-06 2009-02-26 Hitachi Displays Ltd 液晶表示装置
JP5704790B2 (ja) * 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
KR20160063402A (ko) * 2008-09-12 2016-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치
JP4844627B2 (ja) 2008-12-24 2011-12-28 ソニー株式会社 薄膜トランジスタの製造方法および表示装置の製造方法
JP5328414B2 (ja) 2009-02-25 2013-10-30 富士フイルム株式会社 トップゲート型の電界効果型トランジスタ及びその製造方法並びにそれを備えた表示装置
WO2010098100A1 (ja) * 2009-02-27 2010-09-02 株式会社アルバック トランジスタ、トランジスタの製造方法及びその製造装置
US8202769B2 (en) * 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5636304B2 (ja) * 2011-02-08 2014-12-03 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板及びその製造方法

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US8710498B2 (en) 2014-04-29
US9123588B2 (en) 2015-09-01
US20120199827A1 (en) 2012-08-09
JP2012164873A (ja) 2012-08-30
US20140191231A1 (en) 2014-07-10

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