JP5633167B2 - エピタキシャル成長システム - Google Patents

エピタキシャル成長システム Download PDF

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Publication number
JP5633167B2
JP5633167B2 JP2010067787A JP2010067787A JP5633167B2 JP 5633167 B2 JP5633167 B2 JP 5633167B2 JP 2010067787 A JP2010067787 A JP 2010067787A JP 2010067787 A JP2010067787 A JP 2010067787A JP 5633167 B2 JP5633167 B2 JP 5633167B2
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Japan
Prior art keywords
pipe
gas
epitaxial growth
reaction chamber
scrubber
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JP2010067787A
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Japanese (ja)
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JP2011204722A (ja
JP2011204722A5 (enExample
Inventor
尊大 本田
尊大 本田
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Sumco Corp
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Sumco Corp
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Priority to JP2010067787A priority Critical patent/JP5633167B2/ja
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Publication of JP2011204722A5 publication Critical patent/JP2011204722A5/ja
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JP2010067787A 2010-03-24 2010-03-24 エピタキシャル成長システム Expired - Fee Related JP5633167B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010067787A JP5633167B2 (ja) 2010-03-24 2010-03-24 エピタキシャル成長システム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010067787A JP5633167B2 (ja) 2010-03-24 2010-03-24 エピタキシャル成長システム

Publications (3)

Publication Number Publication Date
JP2011204722A JP2011204722A (ja) 2011-10-13
JP2011204722A5 JP2011204722A5 (enExample) 2013-05-02
JP5633167B2 true JP5633167B2 (ja) 2014-12-03

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ID=44881115

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JP2010067787A Expired - Fee Related JP5633167B2 (ja) 2010-03-24 2010-03-24 エピタキシャル成長システム

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JP (1) JP5633167B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6482979B2 (ja) * 2015-07-29 2019-03-13 東京エレクトロン株式会社 液処理装置
US11487304B2 (en) * 2021-01-08 2022-11-01 Applied Materials, Inc. Process fluid path switching in recipe operations

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261067A (ja) * 1988-08-26 1990-03-01 Tel Sagami Ltd 熱処理装置
JP3748473B2 (ja) * 1996-12-12 2006-02-22 キヤノン株式会社 堆積膜形成装置
JP3854157B2 (ja) * 2002-01-15 2006-12-06 株式会社日立国際電気 半導体製造装置及びそのクリーニング方法
KR100498467B1 (ko) * 2002-12-05 2005-07-01 삼성전자주식회사 배기 경로에서의 파우더 생성을 방지할 수 있는 원자층증착 장비
JP4423914B2 (ja) * 2003-05-13 2010-03-03 東京エレクトロン株式会社 処理装置及びその使用方法
JP4931381B2 (ja) * 2005-02-08 2012-05-16 東京エレクトロン株式会社 基板処理装置，基板処理装置の制御方法，プログラム
JP5037021B2 (ja) * 2005-12-19 2012-09-26 昭和電工株式会社 フッ素ガスの供給方法およびその装置

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JP2011204722A (ja) 2011-10-13

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