JP5632210B2 - 非揮発性メモリ装置及びそのプログラム方法 - Google Patents

非揮発性メモリ装置及びそのプログラム方法 Download PDF

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Publication number
JP5632210B2
JP5632210B2 JP2010140657A JP2010140657A JP5632210B2 JP 5632210 B2 JP5632210 B2 JP 5632210B2 JP 2010140657 A JP2010140657 A JP 2010140657A JP 2010140657 A JP2010140657 A JP 2010140657A JP 5632210 B2 JP5632210 B2 JP 5632210B2
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state group
group code
threshold voltage
data
bit data
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JP2011003263A (ja
JP2011003263A5 (enExample
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俊錫 張
俊錫 張
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
JP2010140657A 2009-06-22 2010-06-21 非揮発性メモリ装置及びそのプログラム方法 Active JP5632210B2 (ja)

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Application Number Priority Date Filing Date Title
KR1020090055397A KR101572830B1 (ko) 2009-06-22 2009-06-22 비휘발성 메모리 장치의 프로그램 방법, 비휘발성 메모리 장치 및 비휘발성 메모리 시스템
KR10-2009-0055397 2009-06-22

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JP2011003263A JP2011003263A (ja) 2011-01-06
JP2011003263A5 JP2011003263A5 (enExample) 2013-07-25
JP5632210B2 true JP5632210B2 (ja) 2014-11-26

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JP (1) JP5632210B2 (enExample)
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Publication number Publication date
JP2011003263A (ja) 2011-01-06
KR20100137128A (ko) 2010-12-30
KR101572830B1 (ko) 2015-11-30
US20100321998A1 (en) 2010-12-23
US8681543B2 (en) 2014-03-25
US8391062B2 (en) 2013-03-05
US20130141974A1 (en) 2013-06-06

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