JP5605005B2 - 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置 - Google Patents

炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置 Download PDF

Info

Publication number
JP5605005B2
JP5605005B2 JP2010136870A JP2010136870A JP5605005B2 JP 5605005 B2 JP5605005 B2 JP 5605005B2 JP 2010136870 A JP2010136870 A JP 2010136870A JP 2010136870 A JP2010136870 A JP 2010136870A JP 5605005 B2 JP5605005 B2 JP 5605005B2
Authority
JP
Japan
Prior art keywords
oxide film
silicon carbide
carbide semiconductor
forming
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010136870A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012004273A (ja
JP2012004273A5 (enExample
Inventor
健良 増田
圭司 和田
里美 伊藤
透 日吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010136870A priority Critical patent/JP5605005B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to EP11795441.2A priority patent/EP2584592A4/en
Priority to PCT/JP2011/054332 priority patent/WO2011158533A1/ja
Priority to CN201180004388.7A priority patent/CN102986009B/zh
Priority to US13/502,976 priority patent/US9184276B2/en
Priority to CA2778197A priority patent/CA2778197A1/en
Priority to KR1020127010182A priority patent/KR20130076790A/ko
Priority to TW100112515A priority patent/TW201203386A/zh
Publication of JP2012004273A publication Critical patent/JP2012004273A/ja
Publication of JP2012004273A5 publication Critical patent/JP2012004273A5/ja
Application granted granted Critical
Publication of JP5605005B2 publication Critical patent/JP5605005B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2010136870A 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置 Expired - Fee Related JP5605005B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2010136870A JP5605005B2 (ja) 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
PCT/JP2011/054332 WO2011158533A1 (ja) 2010-06-16 2011-02-25 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
CN201180004388.7A CN102986009B (zh) 2010-06-16 2011-02-25 用于制造碳化硅半导体装置的方法和设备
US13/502,976 US9184276B2 (en) 2010-06-16 2011-02-25 Method and apparatus for manufacturing silicon carbide semiconductor device
EP11795441.2A EP2584592A4 (en) 2010-06-16 2011-02-25 METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT AND DEVICE FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
CA2778197A CA2778197A1 (en) 2010-06-16 2011-02-25 Method and apparatus for manufacturing silicon carbide semiconductor device
KR1020127010182A KR20130076790A (ko) 2010-06-16 2011-02-25 탄화규소 반도체 장치의 제조 방법 및 탄화규소 반도체 장치의 제조 장치
TW100112515A TW201203386A (en) 2010-06-16 2011-04-11 Method for manufacturing silicon carbide semiconductor device and apparatus for manufacturing silicon carbide semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010136870A JP5605005B2 (ja) 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置

Publications (3)

Publication Number Publication Date
JP2012004273A JP2012004273A (ja) 2012-01-05
JP2012004273A5 JP2012004273A5 (enExample) 2013-04-04
JP5605005B2 true JP5605005B2 (ja) 2014-10-15

Family

ID=45347945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010136870A Expired - Fee Related JP5605005B2 (ja) 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置

Country Status (8)

Country Link
US (1) US9184276B2 (enExample)
EP (1) EP2584592A4 (enExample)
JP (1) JP5605005B2 (enExample)
KR (1) KR20130076790A (enExample)
CN (1) CN102986009B (enExample)
CA (1) CA2778197A1 (enExample)
TW (1) TW201203386A (enExample)
WO (1) WO2011158533A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2013145022A1 (ja) * 2012-03-30 2015-08-03 株式会社日立製作所 炭化珪素半導体装置の製造方法
WO2013145022A1 (ja) * 2012-03-30 2013-10-03 株式会社日立製作所 炭化珪素半導体装置の製造方法
JP2015061001A (ja) * 2013-09-20 2015-03-30 株式会社東芝 半導体装置の製造方法
JP6248532B2 (ja) * 2013-10-17 2017-12-20 セイコーエプソン株式会社 ３Ｃ−ＳｉＣエピタキシャル層の製造方法、３Ｃ−ＳｉＣエピタキシャル基板および半導体装置
JP6844176B2 (ja) * 2016-09-29 2021-03-17 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US20180233574A1 (en) * 2017-02-10 2018-08-16 Purdue Research Foundation Silicon carbide power transistor apparatus and method of producing same
CN109003895B (zh) * 2018-07-19 2021-06-08 大连理工大学 一种提高SiC MOSFET器件性能稳定性的制作方法
JP7294097B2 (ja) * 2019-12-04 2023-06-20 株式会社デンソー 半導体装置の製造方法
JP7774313B2 (ja) * 2020-12-18 2025-11-21 国立大学法人京都大学 ＳｉＣ半導体素子の製造方法及びＳｉＣＭＯＳＦＥＴ
TWI854210B (zh) * 2021-04-15 2024-09-01 環球晶圓股份有限公司 半導體基板的製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272107A (en) 1983-09-24 1993-12-21 Sharp Kabushiki Kaisha Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) device
JPS6066866A (ja) * 1983-09-24 1985-04-17 Sharp Corp 炭化珪素ｍｏｓ構造の製造方法
JPH06314679A (ja) 1993-04-30 1994-11-08 Sony Corp 半導体基板の洗浄方法
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
JP3105770B2 (ja) * 1995-09-29 2000-11-06 日本電気株式会社 半導体装置の製造方法
EP0845803A4 (en) * 1996-04-18 2002-03-27 Matsushita Electric Industrial Co Ltd SiC ELEMENT AND PROCESS FOR ITS PRODUCTION
JP3085272B2 (ja) * 1997-12-19 2000-09-04 富士電機株式会社 炭化けい素半導体装置の熱酸化膜形成方法
JP3959856B2 (ja) * 1998-07-31 2007-08-15 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2000349081A (ja) 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
TW484170B (en) * 1999-11-30 2002-04-21 Applied Materials Inc Integrated modular processing platform
JP3534056B2 (ja) * 2000-08-31 2004-06-07 日産自動車株式会社 炭化珪素半導体装置の製造方法
JP4209585B2 (ja) * 2000-09-01 2009-01-14 独立行政法人産業技術総合研究所 炭化珪素半導体装置
JP2002093800A (ja) * 2000-09-14 2002-03-29 Nissan Motor Co Ltd 炭化珪素半導体装置の製造方法
JP4678672B2 (ja) * 2005-03-09 2011-04-27 誠 後藤 発音学習装置及び発音学習プログラム
JP2006321707A (ja) 2005-04-22 2006-11-30 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
JP2007053227A (ja) * 2005-08-18 2007-03-01 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
US7572741B2 (en) * 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
JP2008098200A (ja) * 2006-10-05 2008-04-24 Kiyoyoshi Mizuno 成膜体およびその製造方法
JP4600438B2 (ja) * 2007-06-21 2010-12-15 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5057903B2 (ja) * 2007-09-06 2012-10-24 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2009212366A (ja) * 2008-03-05 2009-09-17 Oki Semiconductor Co Ltd 半導体装置の製造方法
JP2010147730A (ja) * 2008-12-18 2010-07-01 Nec Corp ネットワーク装置、ｉｐネットワークシステム及び呼制御方法

Also Published As

Publication number Publication date
US9184276B2 (en) 2015-11-10
US20120208368A1 (en) 2012-08-16
CN102986009A (zh) 2013-03-20
CN102986009B (zh) 2016-02-03
WO2011158533A1 (ja) 2011-12-22
CA2778197A1 (en) 2011-12-22
JP2012004273A (ja) 2012-01-05
KR20130076790A (ko) 2013-07-08
EP2584592A1 (en) 2013-04-24
EP2584592A4 (en) 2014-12-10
TW201203386A (en) 2012-01-16

Similar Documents

Publication Publication Date Title
JP5605005B2 (ja) 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
WO2012070368A1 (ja) 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
US20120178259A1 (en) Method of cleaning silicon carbide semiconductor and apparatus for cleaning silicon carbide semiconductor
US11087979B2 (en) Cleaning method
WO2011158528A1 (ja) 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
TWI821158B (zh) 用於半導體製程的整合系統
KR20130083821A (ko) 탄화규소 반도체 장치의 제조 방법
KR20130092574A (ko) 기판 표면으로부터 오염물들 및 자연 산화물들을 제거하는 방법
CN102549723A (zh) 碳化硅半导体的清洗方法
US20120174944A1 (en) Cleaning method for silicon carbide semiconductor and cleaning apparatus for silicon carbide semiconductor
US20110309376A1 (en) Method of cleaning silicon carbide semiconductor, silicon carbide semiconductor, and silicon carbide semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131112

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140729

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140811

R150 Certificate of patent or registration of utility model

Ref document number: 5605005

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees