CA2778197A1 - Method and apparatus for manufacturing silicon carbide semiconductor device - Google Patents

Method and apparatus for manufacturing silicon carbide semiconductor device Download PDF

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Publication number
CA2778197A1
CA2778197A1 CA2778197A CA2778197A CA2778197A1 CA 2778197 A1 CA2778197 A1 CA 2778197A1 CA 2778197 A CA2778197 A CA 2778197A CA 2778197 A CA2778197 A CA 2778197A CA 2778197 A1 CA2778197 A1 CA 2778197A1
Authority
CA
Canada
Prior art keywords
oxide film
forming
silicon carbide
semiconductor device
carbide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2778197A
Other languages
English (en)
French (fr)
Inventor
Takeyoshi Masuda
Keiji Wada
Satomi Itoh
Toru Hiyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CA2778197A1 publication Critical patent/CA2778197A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CA2778197A 2010-06-16 2011-02-25 Method and apparatus for manufacturing silicon carbide semiconductor device Abandoned CA2778197A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010136870A JP5605005B2 (ja) 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
JP2010-136870 2010-06-16
PCT/JP2011/054332 WO2011158533A1 (ja) 2010-06-16 2011-02-25 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置

Publications (1)

Publication Number Publication Date
CA2778197A1 true CA2778197A1 (en) 2011-12-22

Family

ID=45347945

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2778197A Abandoned CA2778197A1 (en) 2010-06-16 2011-02-25 Method and apparatus for manufacturing silicon carbide semiconductor device

Country Status (8)

Country Link
US (1) US9184276B2 (enExample)
EP (1) EP2584592A4 (enExample)
JP (1) JP5605005B2 (enExample)
KR (1) KR20130076790A (enExample)
CN (1) CN102986009B (enExample)
CA (1) CA2778197A1 (enExample)
TW (1) TW201203386A (enExample)
WO (1) WO2011158533A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2013145022A1 (ja) * 2012-03-30 2015-08-03 株式会社日立製作所 炭化珪素半導体装置の製造方法
DE112012005837T5 (de) * 2012-03-30 2014-10-30 Hitachi, Ltd. Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung
JP2015061001A (ja) * 2013-09-20 2015-03-30 株式会社東芝 半導体装置の製造方法
JP6248532B2 (ja) * 2013-10-17 2017-12-20 セイコーエプソン株式会社 ３Ｃ−ＳｉＣエピタキシャル層の製造方法、３Ｃ−ＳｉＣエピタキシャル基板および半導体装置
JP6844176B2 (ja) * 2016-09-29 2021-03-17 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US20180233574A1 (en) * 2017-02-10 2018-08-16 Purdue Research Foundation Silicon carbide power transistor apparatus and method of producing same
CN109003895B (zh) * 2018-07-19 2021-06-08 大连理工大学 一种提高SiC MOSFET器件性能稳定性的制作方法
JP7294097B2 (ja) * 2019-12-04 2023-06-20 株式会社デンソー 半導体装置の製造方法
CN116569310A (zh) * 2020-12-18 2023-08-08 国立大学法人京都大学 SiC半导体元件的制造方法及SiC金属氧化物半导体场效应晶体管
TWI854210B (zh) * 2021-04-15 2024-09-01 環球晶圓股份有限公司 半導體基板的製造方法

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JPS6066866A (ja) * 1983-09-24 1985-04-17 Sharp Corp 炭化珪素ｍｏｓ構造の製造方法
US5272107A (en) 1983-09-24 1993-12-21 Sharp Kabushiki Kaisha Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) device
JPH06314679A (ja) 1993-04-30 1994-11-08 Sony Corp 半導体基板の洗浄方法
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
JP3105770B2 (ja) * 1995-09-29 2000-11-06 日本電気株式会社 半導体装置の製造方法
EP0845803A4 (en) * 1996-04-18 2002-03-27 Matsushita Electric Industrial Co Ltd SiC ELEMENT AND PROCESS FOR ITS PRODUCTION
JP3085272B2 (ja) 1997-12-19 2000-09-04 富士電機株式会社 炭化けい素半導体装置の熱酸化膜形成方法
JP3959856B2 (ja) * 1998-07-31 2007-08-15 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2000349081A (ja) * 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
TW484170B (en) * 1999-11-30 2002-04-21 Applied Materials Inc Integrated modular processing platform
JP3534056B2 (ja) 2000-08-31 2004-06-07 日産自動車株式会社 炭化珪素半導体装置の製造方法
JP4209585B2 (ja) 2000-09-01 2009-01-14 独立行政法人産業技術総合研究所 炭化珪素半導体装置
JP2002093800A (ja) * 2000-09-14 2002-03-29 Nissan Motor Co Ltd 炭化珪素半導体装置の製造方法
JP4678672B2 (ja) * 2005-03-09 2011-04-27 誠 後藤 発音学習装置及び発音学習プログラム
JP2006321707A (ja) 2005-04-22 2006-11-30 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
JP2007053227A (ja) * 2005-08-18 2007-03-01 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
US7572741B2 (en) 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
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JP5057903B2 (ja) * 2007-09-06 2012-10-24 三菱電機株式会社 炭化珪素半導体装置の製造方法
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Also Published As

Publication number Publication date
US9184276B2 (en) 2015-11-10
US20120208368A1 (en) 2012-08-16
EP2584592A1 (en) 2013-04-24
WO2011158533A1 (ja) 2011-12-22
EP2584592A4 (en) 2014-12-10
KR20130076790A (ko) 2013-07-08
TW201203386A (en) 2012-01-16
JP2012004273A (ja) 2012-01-05
CN102986009B (zh) 2016-02-03
CN102986009A (zh) 2013-03-20
JP5605005B2 (ja) 2014-10-15

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Legal Events

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Effective date: 20160225