JP5599623B2 - 堆積チャンバにおける酸化からの導電体の保護 - Google Patents

堆積チャンバにおける酸化からの導電体の保護 Download PDF

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JP5599623B2
JP5599623B2 JP2010034769A JP2010034769A JP5599623B2 JP 5599623 B2 JP5599623 B2 JP 5599623B2 JP 2010034769 A JP2010034769 A JP 2010034769A JP 2010034769 A JP2010034769 A JP 2010034769A JP 5599623 B2 JP5599623 B2 JP 5599623B2
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chamber
deposition
pressure
substrate
temperature
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JP2010209465A5 (https=
JP2010209465A (ja
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タツヤ・ヨシミ
ルネ・ドゥ・ブランク
ジェローム・ノワレー
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エーエスエム・インターナショナル・ナームローゼ・ベンノートシャープ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010034769A 2009-02-20 2010-02-19 堆積チャンバにおける酸化からの導電体の保護 Active JP5599623B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/390,145 US7829457B2 (en) 2009-02-20 2009-02-20 Protection of conductors from oxidation in deposition chambers
US12/390,145 2009-02-20

Publications (3)

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JP2010209465A JP2010209465A (ja) 2010-09-24
JP2010209465A5 JP2010209465A5 (https=) 2012-04-19
JP5599623B2 true JP5599623B2 (ja) 2014-10-01

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US (1) US7829457B2 (https=)
JP (1) JP5599623B2 (https=)
KR (1) KR101548129B1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8889565B2 (en) * 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US9127340B2 (en) * 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
JP2017532755A (ja) * 2014-08-01 2017-11-02 ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ， アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー 化合物半導体デバイスのためのエピタキシャル金属の遷移金属窒化物層
JP6484478B2 (ja) 2015-03-25 2019-03-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7258826B2 (ja) 2020-06-30 2023-04-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP7515364B2 (ja) 2020-10-19 2024-07-12 東京エレクトロン株式会社 ボート搬入方法及び熱処理装置
KR102868615B1 (ko) * 2021-04-02 2025-10-10 주식회사 원익아이피에스 기판처리방법

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123866A (ja) 1982-01-14 1983-07-23 Agency Of Ind Science & Technol 気相メッキ方法
JP2624736B2 (ja) 1988-01-14 1997-06-25 株式会社東芝 半導体装置の製造方法
JP2655666B2 (ja) 1988-02-10 1997-09-24 株式会社日立製作所 配線形成方法
US5008160A (en) 1988-07-11 1991-04-16 Jenkin William C Method of securing adherent coatings by CVD from metal carbonyls, and articles thus obtained
US5518061A (en) * 1988-11-10 1996-05-21 Lanxide Technology Company, Lp Method of modifying the properties of a metal matrix composite body
US5108983A (en) 1989-11-21 1992-04-28 Georgia Tech Research Corporation Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition
JP2892170B2 (ja) 1990-07-20 1999-05-17 株式会社東芝 熱処理成膜方法
US5253656A (en) * 1991-05-23 1993-10-19 Rincoe Richard G Apparatus and method for monitoring contact pressure between body parts and contact surfaces
GB9206442D0 (en) 1992-03-25 1992-05-06 Metal Research Semiconductors Treatment chamber
JPH06151815A (ja) * 1992-11-13 1994-05-31 Ricoh Co Ltd 半導体装置とその製造方法
US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
KR0141195B1 (ko) 1994-06-08 1998-07-15 김광호 저저항 게이트전극을 갖는 반도체소자의 제조방법
US6090701A (en) 1994-06-21 2000-07-18 Kabushiki Kaisha Toshiba Method for production of semiconductor device
KR0183729B1 (ko) 1995-08-18 1999-04-15 김광호 극 박막의 금속층 형성방법 및 이를 이용한 배선 형성방법
US5834068A (en) 1996-07-12 1998-11-10 Applied Materials, Inc. Wafer surface temperature control for deposition of thin films
US5756392A (en) 1997-01-22 1998-05-26 Taiwan Semiconductor Manuacturing Company, Ltd. Method of formation of polycide in a semiconductor IC device
US5872017A (en) 1997-01-24 1999-02-16 Seh America, Inc. In-situ epitaxial passivation for resistivity measurement
US5916378A (en) 1997-03-11 1999-06-29 Wj Semiconductor Equipment Group, Inc. Method of reducing metal contamination during semiconductor processing in a reactor having metal components
US5985691A (en) 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
US6276072B1 (en) 1997-07-10 2001-08-21 Applied Materials, Inc. Method and apparatus for heating and cooling substrates
US6013134A (en) 1998-02-18 2000-01-11 International Business Machines Corporation Advance integrated chemical vapor deposition (AICVD) for semiconductor devices
US6193911B1 (en) 1998-04-29 2001-02-27 Morton International Incorporated Precursor solution compositions for electronic devices using CCVD
US6329899B1 (en) 1998-04-29 2001-12-11 Microcoating Technologies, Inc. Formation of thin film resistors
KR100297628B1 (ko) * 1998-10-09 2001-08-07 황 철 주 반도체소자제조방법
US20010049181A1 (en) * 1998-11-17 2001-12-06 Sudha Rathi Plasma treatment for cooper oxide reduction
US6204204B1 (en) 1999-04-01 2001-03-20 Cvc Products, Inc. Method and apparatus for depositing tantalum-based thin films with organmetallic precursor
US6265297B1 (en) 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US6348420B1 (en) 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
JP2001262378A (ja) 2000-03-16 2001-09-26 Matsushita Electric Ind Co Ltd プラズマ処理方法
US6679951B2 (en) 2000-05-15 2004-01-20 Asm Intenational N.V. Metal anneal with oxidation prevention
US6838115B2 (en) 2000-07-12 2005-01-04 Fsi International, Inc. Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices
US6458714B1 (en) 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
US7022541B1 (en) 2001-11-19 2006-04-04 The Board Of Trustees Of The Leland Stanford Junior University Patterned growth of single-walled carbon nanotubes from elevated wafer structures
US7256370B2 (en) 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
JP3864413B2 (ja) * 2002-04-22 2006-12-27 セイコーエプソン株式会社 トランジスタの製造方法
US6858524B2 (en) * 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US6890867B2 (en) 2003-02-25 2005-05-10 Micron Technology, Inc. Transistor fabrication methods comprising selective wet-oxidation
US7238595B2 (en) 2003-03-13 2007-07-03 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
KR20060079144A (ko) * 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
KR100615602B1 (ko) * 2004-09-15 2006-08-25 삼성전자주식회사 매끄러운 표면을 갖는 타이타늄 나이트라이드 막의 형성방법들 및 이를 이용한 반도체 장치의 형성방법들
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7435665B2 (en) 2004-10-06 2008-10-14 Okmetic Oyj CVD doped structures
JP2006196910A (ja) * 2005-01-14 2006-07-27 Samsung Electronics Co Ltd 半導体基板のインサイチュ洗浄方法及びこれを採用する半導体素子の製造方法
US20060240680A1 (en) 2005-04-25 2006-10-26 Applied Materials, Inc. Substrate processing platform allowing processing in different ambients
US7851358B2 (en) 2005-05-05 2010-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Low temperature method for minimizing copper hillock defects
JP2007077455A (ja) 2005-09-14 2007-03-29 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
JP5036172B2 (ja) * 2005-11-21 2012-09-26 株式会社日立国際電気 基板処理装置、基板処理方法および半導体装置の製造方法
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US7407875B2 (en) 2006-09-06 2008-08-05 International Business Machines Corporation Low resistance contact structure and fabrication thereof

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Publication number Publication date
KR20100095383A (ko) 2010-08-30
US7829457B2 (en) 2010-11-09
JP2010209465A (ja) 2010-09-24
KR101548129B1 (ko) 2015-08-28
US20100216306A1 (en) 2010-08-26

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