JP5599026B2 - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法 Download PDF

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JP5599026B2
JP5599026B2 JP2009244967A JP2009244967A JP5599026B2 JP 5599026 B2 JP5599026 B2 JP 5599026B2 JP 2009244967 A JP2009244967 A JP 2009244967A JP 2009244967 A JP2009244967 A JP 2009244967A JP 5599026 B2 JP5599026 B2 JP 5599026B2
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electrode
region
layer
oxide semiconductor
forming
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JP2011091279A (ja
JP2011091279A5 (enExample
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政史 佐野
禄則 立石
歩 佐藤
享 林
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Canon Inc
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Canon Inc
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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009244967A 2009-10-23 2009-10-23 薄膜トランジスタの製造方法 Active JP5599026B2 (ja)

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JP2009244967A JP5599026B2 (ja) 2009-10-23 2009-10-23 薄膜トランジスタの製造方法

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JP2011091279A5 JP2011091279A5 (enExample) 2012-12-06
JP5599026B2 true JP5599026B2 (ja) 2014-10-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10797082B2 (en) 2017-09-29 2020-10-06 Sharp Kabushiki Kaisha Thin film transistor array substrate and method of producing the same

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Publication number Priority date Publication date Assignee Title
CN104094386B (zh) * 2012-01-31 2017-06-23 夏普株式会社 半导体装置及其制造方法
CN104094409B (zh) * 2012-01-31 2016-11-16 夏普株式会社 半导体装置及其制造方法
US9520476B2 (en) 2012-01-31 2016-12-13 Sharp Kabushiki Kaisha Semiconductor device and method for producing same
CN102629590B (zh) * 2012-02-23 2014-10-22 京东方科技集团股份有限公司 一种薄膜晶体管阵列基板及其制作方法
US20150129865A1 (en) * 2012-03-12 2015-05-14 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
WO2013150981A1 (ja) 2012-04-04 2013-10-10 シャープ株式会社 半導体装置およびその製造方法
WO2013151002A1 (ja) 2012-04-06 2013-10-10 シャープ株式会社 半導体装置およびその製造方法
WO2013161738A1 (ja) * 2012-04-23 2013-10-31 シャープ株式会社 半導体装置およびその製造方法
US20150123117A1 (en) * 2012-05-14 2015-05-07 Sharp Kabushshiki Kaisha Semiconductor device and method for manufacturing same
US9276127B2 (en) 2012-06-19 2016-03-01 Sharp Kabushiki Kaisha Semiconductor device and method for producing same
US9379250B2 (en) 2012-06-22 2016-06-28 Sharp Kabushiki Kaisha Semiconductor device and method for producing same
KR101682320B1 (ko) * 2012-10-31 2016-12-05 샤프 가부시키가이샤 일렉트로루미네센스 기판 및 그 제조 방법, 일렉트로루미네센스 표시 패널, 일렉트로루미네센스 표시 장치
JP2014110300A (ja) * 2012-11-30 2014-06-12 Nichia Chem Ind Ltd 半導体発光素子の製造方法
JP6083089B2 (ja) 2013-03-27 2017-02-22 株式会社Ｊｏｌｅｄ 半導体装置、表示装置および電子機器
US9704894B2 (en) * 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
JP6367655B2 (ja) * 2013-09-13 2018-08-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016001712A (ja) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2015087585A1 (ja) * 2013-12-09 2015-06-18 シャープ株式会社 液晶表示装置
CN105845841A (zh) * 2015-01-14 2016-08-10 南京瀚宇彩欣科技有限责任公司 半导体装置及其制造方法
US20200035717A1 (en) * 2018-07-26 2020-01-30 Sharp Kabushiki Kaisha Thin film transistor substrate and method of producing thin film transistor substrate
TWI692077B (zh) * 2019-04-09 2020-04-21 友達光電股份有限公司 半導體基板及其製造方法
CN112542485A (zh) * 2019-09-23 2021-03-23 台湾积体电路制造股份有限公司 显示设备与其制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007040194A (ja) * 2005-08-03 2007-02-15 Yagi Seisakusho:Kk 往復動ポンプの駆動方法
JP4404881B2 (ja) * 2006-08-09 2010-01-27 日本電気株式会社 薄膜トランジスタアレイ、その製造方法及び液晶表示装置
JP5406449B2 (ja) * 2007-05-30 2014-02-05 キヤノン株式会社 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10797082B2 (en) 2017-09-29 2020-10-06 Sharp Kabushiki Kaisha Thin film transistor array substrate and method of producing the same

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