JP5590035B2 - 積層セラミックコンデンサ - Google Patents
積層セラミックコンデンサ Download PDFInfo
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- JP5590035B2 JP5590035B2 JP2011532942A JP2011532942A JP5590035B2 JP 5590035 B2 JP5590035 B2 JP 5590035B2 JP 2011532942 A JP2011532942 A JP 2011532942A JP 2011532942 A JP2011532942 A JP 2011532942A JP 5590035 B2 JP5590035 B2 JP 5590035B2
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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Description
すなわち、誘電体セラミックは、
組成式:(1−x)(Ba1-yCay)mTiO3+xCaTiO3+aRe2O3+bMgO+cMnO+dV2O3+eSiO2で表わされる組成(Reは、Gd、Dy、Y、HoおよびErから選ばれる少なくとも1種。)を有し、かつ、
0.001≦x≦0.02、
0.08≦y≦0.20、および
0.99≦m≦1.05
の各条件を満たすとともに、
(1−x)(Ba1-yCay)mTiO3+xCaTiO3を1モルとしたときのモル部でa、b、c、dおよびeをそれぞれ表わしたとき、
0.01≦a≦0.04、
0.005≦b≦0.035、
0≦c≦0.01、
0≦d≦0.01、および
0.01≦e≦0.04
の各条件を満たすことを特徴としている。
0.001≦x≦0.02、および
0.08≦y≦0.20
の各条件を満たすとともに、
(1−x)(Ba1-yCay)TiO3+xCaTiO3を1モルとしたときのモル部でeを表わしたとき、
0.01≦e≦0.04
の条件を満たす。
0.001≦x≦0.02、
0.08≦y≦0.20、および
0.99≦m≦1.05
の各条件を満たすとともに、
(1−x)(Ba1-yCay)mTiO3+xCaTiO3を1モルとしたときのモル部でa、b、c、dおよびeをそれぞれ表わしたとき、
0.01≦a≦0.04、
0.005≦b≦0.035、
0≦c≦0.01、
0≦d≦0.01、および
0.01≦e≦0.04
の各条件を満たす。
Ca置換量が表1に示す「y」に調整された(Ba1-yCay)TiO3を用意するとともに、CaTiO3、MnOおよびSiO2を用意し、これらを、(1−x)(Ba1-yCay)TiO3+xCaTiO3+cMnO+eSiO2の組成式における「x」、「c」および[e」が表1に示す数値となるように秤量し、混合した原料粉末を用意した。ここで、「c」および「e」は、(1−x)(Ba1-yCay)TiO3+xCaTiO3を1モルとしたときのモル部を示している。なお、実験例1において作製した試料は、Re 2 O 3 、およびMgOを含まない点で、この発明の範囲外の参考例である。
0.001≦x≦0.02、
0.08≦y≦0.20
0≦c≦0.01、および
0.01≦e≦0.04
の条件の少なくとも1つを満たしていない試料である。
0.001≦x≦0.02、
0.08≦y≦0.20
0≦c≦0.01、および
0.01≦e≦0.04
の各条件を満たしている。これら試料3〜9、12〜18および21〜24によれば、絶縁抵抗率がlogρ(ρの単位は「Ω・m」)で10以上となり、かつ1000以上のεが得られた。
(Ba,Ca)/Ti比「m」が表2に示すように調整された(Ba0.89Ca0.11)mTiO3を用意するとともに、CaTiO3、Y2O3、Gd2O3、Dy2O3、Ho2O3、Er2O3、MgO、V2O3およびSiO2を用意し、これらを、(1−x)(Ba0.89Ca0.11)mTiO3+xCaTiO3+aRe2O3+bMgO+cMnO+dV2O3+eSiO2の組成式における「m」、[a」、「b」、「c」、「d」および[e」が表2に示す数値となるように秤量し、混合した原料粉末を用意した。ここで、「a」、「b」、「c」、「d」および「e」は、(1−x)(Ba0.89Ca0.11)mTiO3+xCaTiO3を1モルとしたときのモル部を示している。
0.001≦x≦0.02、
0.08≦y≦0.20、
0.99≦m≦1.05、
0.01≦a≦0.04、
0.005≦b≦0.035、
0≦c≦0.01、
0≦d≦0.01、および
0.01≦e≦0.04
の各条件を満たしている。これら試料102〜107、110〜113、115〜118、120〜122および124〜128によれば、絶縁抵抗率がlogρ(ρの単位は「Ω・m」)で10以上となり、1000以上のεが得られ、20時間以上のMTTFが得られ、150℃TCCが±15%以内であり、X8R判定を合格した。
2 コンデンサ本体
3 誘電体セラミック層
4,5 内部電極
8,9 外部電極
Claims (1)
- 積層された複数の誘電体セラミック層、および前記誘電体セラミック層間の特定の界面に沿って形成された複数の内部電極をもって構成される、コンデンサ本体と、
前記コンデンサ本体の外表面上の互いに異なる位置に形成され、かつ前記内部電極の特定のものに電気的に接続される、複数の外部電極と
を備え、
前記誘電体セラミック層は、
組成式:(1−x)(Ba1-yCay)mTiO3+xCaTiO3+aRe2O3+bMgO+cMnO+dV2O3+eSiO2で表わされる組成(Reは、Gd、Dy、Y、HoおよびErから選ばれる少なくとも1種。)を有し、かつ、
0.001≦x≦0.02、
0.08≦y≦0.20、および
0.99≦m≦1.05
の各条件を満たすとともに、
(1−x)(Ba1-yCay)mTiO3+xCaTiO3を1モルとしたときのモル部でa、b、c、dおよびeをそれぞれ表わしたとき、
0.01≦a≦0.04、
0.005≦b≦0.035、
0≦c≦0.01、
0≦d≦0.01、および
0.01≦e≦0.04
の各条件を満たす、
誘電体セラミックからなる、積層セラミックコンデンサ。
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JP2011532942A JP5590035B2 (ja) | 2009-09-28 | 2010-08-20 | 積層セラミックコンデンサ |
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JP2009221800 | 2009-09-28 | ||
JP2009221800 | 2009-09-28 | ||
PCT/JP2010/064061 WO2011036970A1 (ja) | 2009-09-28 | 2010-08-20 | 誘電体セラミックおよび積層セラミックコンデンサ |
JP2011532942A JP5590035B2 (ja) | 2009-09-28 | 2010-08-20 | 積層セラミックコンデンサ |
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JPWO2011036970A1 JPWO2011036970A1 (ja) | 2013-02-21 |
JP5590035B2 true JP5590035B2 (ja) | 2014-09-17 |
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US (1) | US8964356B2 (ja) |
JP (1) | JP5590035B2 (ja) |
CN (1) | CN102510845B (ja) |
DE (1) | DE112010003826B4 (ja) |
WO (1) | WO2011036970A1 (ja) |
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CN103553588B (zh) * | 2013-09-30 | 2015-01-07 | 西安交通大学 | 一种中高介电常数微波介质陶瓷材料及其制备方法 |
JP6376002B2 (ja) * | 2014-03-04 | 2018-08-22 | Tdk株式会社 | 誘電体組成物 |
JP6451406B2 (ja) * | 2014-03-04 | 2019-01-16 | Tdk株式会社 | 誘電体組成物 |
JP6376001B2 (ja) * | 2014-03-04 | 2018-08-22 | Tdk株式会社 | 誘電体組成物 |
US11476048B2 (en) | 2019-07-29 | 2022-10-18 | Samsung Electro-Mechanics Co., Ltd. | Dielectric material and multilayer ceramic capacitor including the same |
JP7327735B2 (ja) * | 2019-07-29 | 2023-08-16 | サムソン エレクトロ-メカニックス カンパニーリミテッド. | 誘電体磁器組成物 |
US11791098B2 (en) * | 2020-12-16 | 2023-10-17 | Samsung Electro-Mechanics Co., Ltd. | Dielectric and multilayer capacitor including the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09183651A (ja) * | 1995-12-28 | 1997-07-15 | Matsushita Electric Ind Co Ltd | 誘電体磁器組成物及びそれを用いたコンデンサ並びに誘電体磁器組成物の製造方法 |
JP2001031469A (ja) * | 1999-07-19 | 2001-02-06 | Murata Mfg Co Ltd | 誘電体セラミックおよび積層セラミック電子部品 |
JP2001220225A (ja) * | 1999-12-01 | 2001-08-14 | Tdk Corp | 誘電体磁器組成物の製造方法 |
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US6544916B1 (en) | 1999-10-05 | 2003-04-08 | Tdk Corporation | Manufacture method of dielectric ceramic composition |
KR100586961B1 (ko) * | 2004-04-14 | 2006-06-08 | 삼성전기주식회사 | 내환원성 유전체 자기조성물과 초박층 적층세라믹 콘덴서 |
KR100811454B1 (ko) * | 2004-08-19 | 2008-03-10 | 가부시키가이샤 무라타 세이사쿠쇼 | 유전체 세라믹 및 적층 세라믹 커패시터 |
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JPH09183651A (ja) * | 1995-12-28 | 1997-07-15 | Matsushita Electric Ind Co Ltd | 誘電体磁器組成物及びそれを用いたコンデンサ並びに誘電体磁器組成物の製造方法 |
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JPWO2011036970A1 (ja) | 2013-02-21 |
CN102510845B (zh) | 2014-07-30 |
WO2011036970A1 (ja) | 2011-03-31 |
US20120170169A1 (en) | 2012-07-05 |
DE112010003826T5 (de) | 2012-07-12 |
US8964356B2 (en) | 2015-02-24 |
CN102510845A (zh) | 2012-06-20 |
DE112010003826B4 (de) | 2018-01-11 |
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