JP5589428B2 - 伝送線路、インピーダンス変換器、集積回路搭載装置および通信機モジュール - Google Patents
伝送線路、インピーダンス変換器、集積回路搭載装置および通信機モジュール Download PDFInfo
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- JP5589428B2 JP5589428B2 JP2010034772A JP2010034772A JP5589428B2 JP 5589428 B2 JP5589428 B2 JP 5589428B2 JP 2010034772 A JP2010034772 A JP 2010034772A JP 2010034772 A JP2010034772 A JP 2010034772A JP 5589428 B2 JP5589428 B2 JP 5589428B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
- H01P5/022—Transitions between lines of the same kind and shape, but with different dimensions
- H01P5/028—Transitions between lines of the same kind and shape, but with different dimensions between strip lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microwave Amplifiers (AREA)
- Waveguides (AREA)
Description
以上、実施形態を説明したが、ここに記載したすべての例や条件は、発明および技術に適用する発明の概念の理解を助ける目的で記載されたものであり、特に記載された例や条件は発明の範囲を制限することを意図するものではなく、明細書のそのような例の構成は発明の利点および欠点を示すものではない。発明の実施形態を詳細に記載したが、各種の変更、置き換え、変形が発明の精神および範囲を逸脱することなく行えることが理解されるべきである。
23、31、33、41、51 基板
24、34 1/4波長線路
42、52 1/4波長線路(ベント分岐線路)
43A、43B、53A、53B ワイヤボンディング
54 抵抗
Claims (10)
- 特性インピーダンスの異なる第1の伝送線路および第2の伝送線路を備えるインピーダンス変換器であって、
前記第1の伝送線路は、第1の基板に形成された1つの直線線路であり、
前記第2の伝送線路は、第2の基板に形成され、共通の第2端部に接続され、前記直線線路の信号方向に対して外側に曲がる折り曲げ形状を有する同じ線路長の2つの分岐線路を備え、
前記2つの分岐線路の2つの第1端部は、前記第1の伝送線路の前記直線線路に、前記直線線路の信号方向に垂直な端面で対向し、且つ前記第1の伝送線路に共通に接続され、
前記2つの分岐線路のそれぞれの特性インピーダンスは、前記第2の伝送線路の特性インピーダンスの2倍であることを特徴とするインピーダンス変換器。 - 前記第2の伝送線路は、同一誘電率の基板上に形成され、互いに線対称の折り曲げ形状の2つのマイクロストリップ線路を備える請求項1に記載のインピーダンス変換器。
- 前記2つのマイクロストリップ線路の前記第1端部は、分離している請求項2に記載のインピーダンス変換器。
- 前記2つのマイクロストリップ線路の前記第1端部は、テーパー状である請求項3に記載のインピーダンス変換器。
- 前記2つのマイクロストリップ線路は、前記第1端部が共通に接続される共通電極を備える請求項2に記載のインピーダンス変換器。
- 前記2つのマイクロストリップ線路の前記第2端部は一体である請求項2から5のいずれか1項に記載のインピーダンス変換器。
- 前記2つのマイクロストリップ線路は、前記第1端部の近傍に、前記2つのマイクロストリップ線路を接続する抵抗を備える請求項2から6のいずれか1項に記載のインピーダンス変換器。
- 前記2つの分岐線路の前記第1端部と前記第1の伝送線路を接続する複数のワイヤボンディングを備え、
前記複数のワイヤボンディングは、前記第1の伝送線路の信号の進行方向に対して両側の端部近傍に接触するワイヤボンディングを含む請求項1から7のいずれか1項に記載のインピーダンス変換器。 - 集積回路と、整合回路と、を備える集積回路搭載装置であって、
前記整合回路は、請求項1から8のいずれか1項に記載のインピーダンス変換器を備えることを特徴とする集積回路搭載装置。 - 請求項9に記載の集積回路搭載装置を備える通信機モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010034772A JP5589428B2 (ja) | 2010-02-19 | 2010-02-19 | 伝送線路、インピーダンス変換器、集積回路搭載装置および通信機モジュール |
EP11152090A EP2360775B1 (en) | 2010-02-19 | 2011-01-25 | Transmission line, impedance transformer, integrated circuit mounted device, and communication device module |
US13/018,565 US8816793B2 (en) | 2010-02-19 | 2011-02-01 | Transmission line, impedance transformer, integrated circuit mounted device, and communication device module |
CN2011100430203A CN102195112B (zh) | 2010-02-19 | 2011-02-18 | 传输线、阻抗变换器、集成电路安装设备及通信设备模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010034772A JP5589428B2 (ja) | 2010-02-19 | 2010-02-19 | 伝送線路、インピーダンス変換器、集積回路搭載装置および通信機モジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014114363A Division JP5812158B2 (ja) | 2014-06-02 | 2014-06-02 | 伝送線路、インピーダンス変換器、集積回路搭載装置および通信機モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2011172072A JP2011172072A (ja) | 2011-09-01 |
JP5589428B2 true JP5589428B2 (ja) | 2014-09-17 |
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JP2010034772A Active JP5589428B2 (ja) | 2010-02-19 | 2010-02-19 | 伝送線路、インピーダンス変換器、集積回路搭載装置および通信機モジュール |
Country Status (4)
Country | Link |
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US (1) | US8816793B2 (ja) |
EP (1) | EP2360775B1 (ja) |
JP (1) | JP5589428B2 (ja) |
CN (1) | CN102195112B (ja) |
Families Citing this family (11)
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KR101164184B1 (ko) * | 2010-10-28 | 2012-07-11 | 숭실대학교산학협력단 | 신호 손실이 최소화 된 전송선 변압기 |
JP2012156362A (ja) * | 2011-01-27 | 2012-08-16 | Fujitsu Ltd | 伝送線路、集積回路搭載装置および通信機モジュール |
CN102938640B (zh) * | 2012-10-26 | 2016-01-13 | 南京信息工程大学 | 一种双频阻抗匹配网络 |
JP5711778B2 (ja) * | 2013-03-06 | 2015-05-07 | 株式会社東芝 | 半導体装置 |
GB201323159D0 (en) * | 2013-12-31 | 2014-02-12 | Diamond Microwave Devices Ltd | Improved matching techniques for wide-bandgap power transistors |
KR102520393B1 (ko) | 2015-11-11 | 2023-04-12 | 삼성전자주식회사 | 디지털 신호의 분기에 따른 반사 손실을 감소시키는 임피던스 매칭 소자 및 이를 포함하는 테스트 시스템 |
CN207124609U (zh) * | 2017-07-21 | 2018-03-20 | 深圳市景程信息科技有限公司 | 逆f类功率放大器的双线输出匹配电路 |
IT201800009997A1 (it) * | 2018-10-31 | 2020-05-01 | Gatesair Srl | Metodo per trasformare l’impedenza di una linea di trasmissione a radiofrequenza di un circuito stampato e relativo circuito stampato |
WO2020115978A1 (ja) * | 2018-12-06 | 2020-06-11 | ソニーセミコンダクタソリューションズ株式会社 | 伝送装置、印刷配線基板、並びに情報機器 |
CN109546990A (zh) * | 2018-12-12 | 2019-03-29 | 江苏博普电子科技有限责任公司 | 一种适用于高频功率器件的宽带匹配电路 |
CN116131781A (zh) * | 2021-11-15 | 2023-05-16 | 安普林荷兰有限公司 | 功率放大器 |
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JPS5737903A (en) | 1980-08-14 | 1982-03-02 | Nec Corp | Distribution constant type matching circuit |
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JPH11122009A (ja) | 1997-10-20 | 1999-04-30 | Fujitsu General Ltd | インピーダンス変換器 |
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2010
- 2010-02-19 JP JP2010034772A patent/JP5589428B2/ja active Active
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2011
- 2011-01-25 EP EP11152090A patent/EP2360775B1/en active Active
- 2011-02-01 US US13/018,565 patent/US8816793B2/en active Active
- 2011-02-18 CN CN2011100430203A patent/CN102195112B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102195112A (zh) | 2011-09-21 |
EP2360775A2 (en) | 2011-08-24 |
US20110204993A1 (en) | 2011-08-25 |
US8816793B2 (en) | 2014-08-26 |
CN102195112B (zh) | 2013-11-27 |
EP2360775B1 (en) | 2013-04-03 |
JP2011172072A (ja) | 2011-09-01 |
EP2360775A3 (en) | 2011-09-21 |
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