JP5566633B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5566633B2
JP5566633B2 JP2009157737A JP2009157737A JP5566633B2 JP 5566633 B2 JP5566633 B2 JP 5566633B2 JP 2009157737 A JP2009157737 A JP 2009157737A JP 2009157737 A JP2009157737 A JP 2009157737A JP 5566633 B2 JP5566633 B2 JP 5566633B2
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Japan
Prior art keywords
film
type impurity
impurity region
conductive film
openings
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Expired - Fee Related
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JP2009157737A
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English (en)
Japanese (ja)
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JP2010041042A5 (enExample
JP2010041042A (ja
Inventor
修 福岡
昌彦 早川
英明 宍戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009157737A priority Critical patent/JP5566633B2/ja
Publication of JP2010041042A publication Critical patent/JP2010041042A/ja
Publication of JP2010041042A5 publication Critical patent/JP2010041042A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
JP2009157737A 2008-07-10 2009-07-02 半導体装置 Expired - Fee Related JP5566633B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009157737A JP5566633B2 (ja) 2008-07-10 2009-07-02 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008180635 2008-07-10
JP2008180635 2008-07-10
JP2009157737A JP5566633B2 (ja) 2008-07-10 2009-07-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2010041042A JP2010041042A (ja) 2010-02-18
JP2010041042A5 JP2010041042A5 (enExample) 2012-08-02
JP5566633B2 true JP5566633B2 (ja) 2014-08-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009157737A Expired - Fee Related JP5566633B2 (ja) 2008-07-10 2009-07-02 半導体装置

Country Status (3)

Country Link
US (2) US8174047B2 (enExample)
JP (1) JP5566633B2 (enExample)
CN (1) CN101626024B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
WO2013011844A1 (en) * 2011-07-15 2013-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9069924B2 (en) * 2011-12-29 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit cell
JP5924313B2 (ja) 2012-08-06 2016-05-25 株式会社デンソー ダイオード
TWI627483B (zh) * 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
TWI882464B (zh) * 2012-11-28 2025-05-01 日商半導體能源研究所股份有限公司 顯示裝置
JP5920275B2 (ja) * 2013-04-08 2016-05-18 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9548293B2 (en) * 2014-02-14 2017-01-17 Infineon Technologies Ag III-nitride based ESD protection device
WO2015189732A1 (ja) * 2014-06-09 2015-12-17 株式会社半導体エネルギー研究所 撮像装置
US9397084B1 (en) * 2015-03-02 2016-07-19 United Microelectronics Corp. Structure of ESD protection circuits on BEOL layer
US9324807B1 (en) * 2015-07-10 2016-04-26 United Silicon Carbide, Inc. Silicon carbide MOSFET with integrated MOS diode
US10651407B2 (en) 2015-09-11 2020-05-12 Nanoholdings, Llc Vertical field-effect transistor
US10483325B2 (en) 2015-09-11 2019-11-19 University Of Florida Research Foundation, Incorporated Light emitting phototransistor
US20170170215A1 (en) * 2015-12-15 2017-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with anti-acid layer and method for forming the same
WO2019013189A1 (ja) * 2017-07-12 2019-01-17 シャープ株式会社 撮像パネル及びその製造方法
FR3093598B1 (fr) 2019-03-05 2023-08-04 St Microelectronics Srl Dispositif de protection contre les surtensions

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Publication number Priority date Publication date Assignee Title
JP2801801B2 (ja) 1991-07-22 1998-09-21 ローム株式会社 Ｐｉｎダイオード
US5477414A (en) * 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
JP3717227B2 (ja) * 1996-03-29 2005-11-16 株式会社ルネサステクノロジ 入力／出力保護回路
US5825601A (en) * 1997-06-16 1998-10-20 Lsi Logic Corporation Power supply ESD protection circuit
JP4080582B2 (ja) * 1997-12-22 2008-04-23 株式会社東芝 半導体集積回路装置
JP4392867B2 (ja) * 1998-02-06 2010-01-06 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6310379B1 (en) 1999-06-03 2001-10-30 Texas Instruments Incorporated NMOS triggered NMOS ESD protection circuit using low voltage NMOS transistors
US6319379B1 (en) * 1999-08-23 2001-11-20 The Regents Of The University Of California Modified electrokinetic sample injection method in chromatography and electrophoresis analysis
JP2002100761A (ja) 2000-09-21 2002-04-05 Mitsubishi Electric Corp シリコンｍｏｓｆｅｔ高周波半導体デバイスおよびその製造方法
JP3983067B2 (ja) * 2001-03-19 2007-09-26 Ｎｅｃエレクトロニクス株式会社 半導体集積回路の静電保護回路
JP4144225B2 (ja) * 2002-01-29 2008-09-03 株式会社デンソー ダイオードおよびその製造方法
US7109533B2 (en) * 2002-03-25 2006-09-19 Nec Electronics Corporation Electrostatic discharge protection device
JP3880943B2 (ja) 2002-03-25 2007-02-14 Ｎｅｃエレクトロニクス株式会社 静電気放電保護素子及び半導体装置
JP4740523B2 (ja) * 2003-01-27 2011-08-03 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置
TW587345B (en) * 2003-02-21 2004-05-11 Toppoly Optoelectronics Corp Method and structure of diode
JP2006060191A (ja) 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
JP2006259241A (ja) * 2005-03-17 2006-09-28 Sanyo Epson Imaging Devices Corp 電気光学装置の製造方法
TWI266426B (en) * 2005-04-13 2006-11-11 Ind Tech Res Inst Method for manufacturing protection structure of active matrix triode field emission device
US20060291114A1 (en) * 2005-06-27 2006-12-28 Teo Chee K Electrostatic discharge protection circuit and method
JP2007042718A (ja) * 2005-08-01 2007-02-15 Renesas Technology Corp 半導体装置
JP2007103809A (ja) 2005-10-07 2007-04-19 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
JP2008091687A (ja) 2006-10-03 2008-04-17 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
CN101626024B (zh) 2013-10-23
US8860081B2 (en) 2014-10-14
US20100006848A1 (en) 2010-01-14
US8174047B2 (en) 2012-05-08
JP2010041042A (ja) 2010-02-18
US20120211749A1 (en) 2012-08-23
CN101626024A (zh) 2010-01-13

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