CN101626024B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN101626024B
CN101626024B CN2009101400439A CN200910140043A CN101626024B CN 101626024 B CN101626024 B CN 101626024B CN 2009101400439 A CN2009101400439 A CN 2009101400439A CN 200910140043 A CN200910140043 A CN 200910140043A CN 101626024 B CN101626024 B CN 101626024B
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China
Prior art keywords
film
semiconductor
conducting film
type impurity
openings
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Expired - Fee Related
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CN2009101400439A
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English (en)
Chinese (zh)
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CN101626024A (zh
Inventor
福冈修
早川昌彦
肉户英明
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN101626024A publication Critical patent/CN101626024A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
CN2009101400439A 2008-07-10 2009-07-10 半导体装置 Expired - Fee Related CN101626024B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008180635 2008-07-10
JP2008180635 2008-07-10
JP2008-180635 2008-07-10

Publications (2)

Publication Number Publication Date
CN101626024A CN101626024A (zh) 2010-01-13
CN101626024B true CN101626024B (zh) 2013-10-23

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Family Applications (1)

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CN2009101400439A Expired - Fee Related CN101626024B (zh) 2008-07-10 2009-07-10 半导体装置

Country Status (3)

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US (2) US8174047B2 (enExample)
JP (1) JP5566633B2 (enExample)
CN (1) CN101626024B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
WO2013011844A1 (en) * 2011-07-15 2013-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9069924B2 (en) * 2011-12-29 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit cell
JP5924313B2 (ja) 2012-08-06 2016-05-25 株式会社デンソー ダイオード
TWI627483B (zh) * 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
TWI882464B (zh) * 2012-11-28 2025-05-01 日商半導體能源研究所股份有限公司 顯示裝置
JP5920275B2 (ja) * 2013-04-08 2016-05-18 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9548293B2 (en) * 2014-02-14 2017-01-17 Infineon Technologies Ag III-nitride based ESD protection device
WO2015189732A1 (ja) * 2014-06-09 2015-12-17 株式会社半導体エネルギー研究所 撮像装置
US9397084B1 (en) * 2015-03-02 2016-07-19 United Microelectronics Corp. Structure of ESD protection circuits on BEOL layer
US9324807B1 (en) * 2015-07-10 2016-04-26 United Silicon Carbide, Inc. Silicon carbide MOSFET with integrated MOS diode
US10651407B2 (en) 2015-09-11 2020-05-12 Nanoholdings, Llc Vertical field-effect transistor
US10483325B2 (en) 2015-09-11 2019-11-19 University Of Florida Research Foundation, Incorporated Light emitting phototransistor
US20170170215A1 (en) * 2015-12-15 2017-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with anti-acid layer and method for forming the same
WO2019013189A1 (ja) * 2017-07-12 2019-01-17 シャープ株式会社 撮像パネル及びその製造方法
FR3093598B1 (fr) 2019-03-05 2023-08-04 St Microelectronics Srl Dispositif de protection contre les surtensions

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6118154A (en) * 1996-03-29 2000-09-12 Mitsubishi Denki Kabushiki Kaisha Input/output protection circuit having an SOI structure
TW200417049A (en) * 2003-02-21 2004-09-01 Toppoly Optoelectronics Corp Method and structure of diode
TW200637014A (en) * 2005-04-13 2006-10-16 Ind Tech Res Inst Method for manufacturing protection structure of active matrix triode field emission device

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JP2801801B2 (ja) 1991-07-22 1998-09-21 ローム株式会社 Ｐｉｎダイオード
US5477414A (en) * 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
US5825601A (en) * 1997-06-16 1998-10-20 Lsi Logic Corporation Power supply ESD protection circuit
JP4080582B2 (ja) * 1997-12-22 2008-04-23 株式会社東芝 半導体集積回路装置
JP4392867B2 (ja) * 1998-02-06 2010-01-06 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6310379B1 (en) 1999-06-03 2001-10-30 Texas Instruments Incorporated NMOS triggered NMOS ESD protection circuit using low voltage NMOS transistors
US6319379B1 (en) * 1999-08-23 2001-11-20 The Regents Of The University Of California Modified electrokinetic sample injection method in chromatography and electrophoresis analysis
JP2002100761A (ja) 2000-09-21 2002-04-05 Mitsubishi Electric Corp シリコンｍｏｓｆｅｔ高周波半導体デバイスおよびその製造方法
JP3983067B2 (ja) * 2001-03-19 2007-09-26 Ｎｅｃエレクトロニクス株式会社 半導体集積回路の静電保護回路
JP4144225B2 (ja) * 2002-01-29 2008-09-03 株式会社デンソー ダイオードおよびその製造方法
US7109533B2 (en) * 2002-03-25 2006-09-19 Nec Electronics Corporation Electrostatic discharge protection device
JP3880943B2 (ja) 2002-03-25 2007-02-14 Ｎｅｃエレクトロニクス株式会社 静電気放電保護素子及び半導体装置
JP4740523B2 (ja) * 2003-01-27 2011-08-03 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置
JP2006060191A (ja) 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
JP2006259241A (ja) * 2005-03-17 2006-09-28 Sanyo Epson Imaging Devices Corp 電気光学装置の製造方法
US20060291114A1 (en) * 2005-06-27 2006-12-28 Teo Chee K Electrostatic discharge protection circuit and method
JP2007042718A (ja) * 2005-08-01 2007-02-15 Renesas Technology Corp 半導体装置
JP2007103809A (ja) 2005-10-07 2007-04-19 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
JP2008091687A (ja) 2006-10-03 2008-04-17 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6118154A (en) * 1996-03-29 2000-09-12 Mitsubishi Denki Kabushiki Kaisha Input/output protection circuit having an SOI structure
TW200417049A (en) * 2003-02-21 2004-09-01 Toppoly Optoelectronics Corp Method and structure of diode
TW200637014A (en) * 2005-04-13 2006-10-16 Ind Tech Res Inst Method for manufacturing protection structure of active matrix triode field emission device

Also Published As

Publication number Publication date
US8860081B2 (en) 2014-10-14
US20100006848A1 (en) 2010-01-14
US8174047B2 (en) 2012-05-08
JP2010041042A (ja) 2010-02-18
JP5566633B2 (ja) 2014-08-06
US20120211749A1 (en) 2012-08-23
CN101626024A (zh) 2010-01-13

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