JP5547495B2 - 半導体構造をエッチングするための、パルス化反応ガスを補充するパルス化プラズマシステム - Google Patents

半導体構造をエッチングするための、パルス化反応ガスを補充するパルス化プラズマシステム Download PDF

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Publication number
JP5547495B2
JP5547495B2 JP2009550927A JP2009550927A JP5547495B2 JP 5547495 B2 JP5547495 B2 JP 5547495B2 JP 2009550927 A JP2009550927 A JP 2009550927A JP 2009550927 A JP2009550927 A JP 2009550927A JP 5547495 B2 JP5547495 B2 JP 5547495B2
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JP
Japan
Prior art keywords
plasma
state
pulsed
etching
sample
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2009550927A
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English (en)
Japanese (ja)
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JP2010519767A (ja
JP2010519767A5 (https=
Inventor
テ， ウォン キム，
ギョン−テ リー，
アレクサンダー パターソン，
ヴァレンティン， エヌ． トドロウ，
シャシャンク， シー． デシュムーク，
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Priority claimed from US11/677,472 external-priority patent/US7718538B2/en
Priority claimed from US11/678,047 external-priority patent/US7771606B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2010519767A publication Critical patent/JP2010519767A/ja
Publication of JP2010519767A5 publication Critical patent/JP2010519767A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2009550927A 2007-02-21 2008-02-21 半導体構造をエッチングするための、パルス化反応ガスを補充するパルス化プラズマシステム Expired - Fee Related JP5547495B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/677,472 2007-02-21
US11/677,472 US7718538B2 (en) 2007-02-21 2007-02-21 Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
US11/678,047 2007-02-22
US11/678,047 US7771606B2 (en) 2007-02-22 2007-02-22 Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
PCT/US2008/002367 WO2008103453A1 (en) 2007-02-21 2008-02-21 Pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures

Publications (3)

Publication Number Publication Date
JP2010519767A JP2010519767A (ja) 2010-06-03
JP2010519767A5 JP2010519767A5 (https=) 2011-04-07
JP5547495B2 true JP5547495B2 (ja) 2014-07-16

Family

ID=39710407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009550927A Expired - Fee Related JP5547495B2 (ja) 2007-02-21 2008-02-21 半導体構造をエッチングするための、パルス化反応ガスを補充するパルス化プラズマシステム

Country Status (3)

Country Link
JP (1) JP5547495B2 (https=)
KR (1) KR101470292B1 (https=)
WO (1) WO2008103453A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5845754B2 (ja) * 2010-09-15 2016-01-20 東京エレクトロン株式会社 プラズマエッチング処理方法
JP6114622B2 (ja) * 2013-04-26 2017-04-12 東京エレクトロン株式会社 エッチング方法
CN105765703B (zh) * 2013-12-23 2021-02-23 英特尔公司 在多个鳍状物间距结构当中的笔直、高和一致的鳍状物的蚀刻技术
JP5921580B2 (ja) * 2014-01-15 2016-05-24 株式会社日立ハイテクノロジーズ プラズマ処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618925A (ja) * 1984-06-23 1986-01-16 Mitsubishi Electric Corp エツチング方法
JPH04110757U (ja) * 1991-03-11 1992-09-25 神港精機株式会社 断続プラズマ装置
US5877407A (en) * 1997-07-22 1999-03-02 Lucent Technologies Inc. Plasma etch end point detection process
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
JP2001085393A (ja) * 1999-09-10 2001-03-30 Hitachi Ltd 表面加工方法
JP2001313284A (ja) * 2000-02-21 2001-11-09 Hitachi Ltd プラズマ処理方法および装置
US6818562B2 (en) * 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US8404594B2 (en) * 2005-05-27 2013-03-26 Freescale Semiconductor, Inc. Reverse ALD
JP2006339562A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp プラズマ処理方法及びそれを用いた半導体装置の製造方法
US7718538B2 (en) * 2007-02-21 2010-05-18 Applied Materials, Inc. Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates

Also Published As

Publication number Publication date
KR20090125112A (ko) 2009-12-03
KR101470292B1 (ko) 2014-12-08
JP2010519767A (ja) 2010-06-03
WO2008103453A1 (en) 2008-08-28

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