Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
  • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
  • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
  • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
  • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
  • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
  • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
  • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/32—Processing objects by plasma generation
  • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
  • H01J2237/334—Etching

Definitions

• the invention is in the fields of Semiconductor Structures and
• a lithography/etch process In order to pattern semiconductor stacks into meaningful structures, a lithography/etch process is typically employed.
• State-of-the-art etch processes include etching a semiconductor stack with a system comprising an ionized gas, i.e. a plasma.
• Plasma etch processing may be particularly useful for etching multiple adjacent structures with fine features.
• limitations of the plasma etch process have revealed themselves.
• One potential limitation of plasma etching may be with respect to the fabrication of an IC with variable spacing between various semiconductor structures within a single sample.
• the etch rate may exhibit a dependence on pattern density, a phenomenon referred to as "micro-loading."
• micro-loading a phenomenon referred to as "micro-loading."
• the etch rate of a material that has been patterned with a high density i.e. smaller spacings between features
• the etch rate of the same material patterned with a low density i.e. larger spacings between features.
• an "over-etch” may be required to fully etch all of the various structures within a single sample, i.e. the areas that are first to completely etch continue to be exposed to the etch process while areas that have not completely etched undergo completion of the etch process. In some cases, this over- etch may have a detrimental impact on the resultant semiconductor structures.
• a plot is provided correlating the etch rate of a particular semiconductor material with the density (i.e. spacings between features) of various semiconductor structures in a single sample in which micro-loading occurs. As indicated by the decreasing slope of the correlation line, the etch rate decreases with increasing density.
• a semiconductor stack 200 comprises a substrate 202, a semiconductor layer 204 and a mask 206.
• the pattern of mask 206 is etched into semiconductor layer 204 with a plasma etch process.
• Micro-loading can occur during the etch process of semiconductor stack 200, such that semiconductor layer 204 etches faster in low density region 208 than in medium density region 210 and high density region 212, as depicted in Figure 2B.
• the etch process performed on semiconductor stack 200 is completed in low density region 208 prior to completion in medium density region 210 and in high density region 212.
• the structures in low density region 208 are exposed to an over-etch while the etch is completed in regions of higher density.
• some detrimental undercutting 214 may occur on structures in regions of lower density. The undercutting may vary with the density, depending on the extent of over-etch that a particular region experiences, as depicted in Figure 2D.
• Figure 1 illustrates a correlation plot of Etch Rate versus Density of
• Figures 2A-D illustrate cross-sectional views representing the effects of micro-loading during an etch process conducted on a semiconductor stack, in accordance with the prior art.
• Figure 3 illustrates a correlation plot of Etch Rate versus Density of
• Figures 4A-C illustrate cross-sectional views representing the effects of a significant reduction in micro-loading during a pulsed etch process with pulsed reaction gas replenish as conducted on a semiconductor stack, in accordance with an embodiment of the present invention.
• Figure 5 A is a flowchart and Figure 5B is a waveform, both representing a series of steps in a pulsed plasma process with pulsed reaction gas replenish, in accordance with an embodiment of the present invention.
• Figures 6A-F illustrate cross-sectional views representing the steps of the flowchart from Figure 5A performed on a semiconductor stack, in accordance with an embodiment of the present invention.
• Figures 7A-C illustrate cross-sectional views representing a continuous/pulsed plasma etch process with pulsed reaction gas replenish performed on a semiconductor stack, in accordance with an embodiment of the present invention.
• Figure 8 is a flowchart representing a series of steps in a pulsed plasma process with pulsed reaction gas replenish, in accordance with an embodiment of the present invention.
• Figures 9A-D illustrate cross-sectional views representing the steps of the flowchart from Figure 8 performed on a semiconductor stack, in accordance with an embodiment of the present invention.
• Figure 10 illustrates a system in which a pulsed plasma process with pulsed reaction gas replenish is conducted, in accordance with an embodiment of the present invention.
• Figures 1 IA-B illustrate the chamber from the system of Figure 10 in a plasma ON state and a plasma OFF state, respectively, in accordance with an embodiment of the present invention.
• Figures 12A-B illustrate the chamber from the system of Figure 10 in a plasma ON/gas inlet device OFF state and a plasma OFF/gas inlet device ON state, respectively, in accordance with an embodiment of the present invention.
• Figures 13A-D illustrate the chamber from the system of Figure 10 in a plasma ON/bias OFF state, a plasma ON/bias ON state, a plasma OFF/bias ON state and a plasma OFF/bias OFF state, respectively, in accordance with an embodiment of the present invention.
• a portion of a sample may be etched by applying a pulsed plasma process.
• the pulsed plasma process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma.
• the plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma in a pulsed plasma process, but not during the ON state.
• a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process having pulsed reaction gas replenish.
• etch rate dependency on structure density may be mitigated.
• an ON state of a plasma i.e. when the plasma is in the form of an ionized gas
• etch by-products are formed.
• these byproducts may migrate away from the sample at a rate slower than in lower density regions of the sample.
• etch by-products may hinder the etch process lending to micro-loading, hi the OFF state, however, these byproducts may be removed from all regions without competing with the etch process.
• FIG. 3 illustrates a correlation plot of Etch Rate versus Density of Structures in a pulsed plasma etch process, in accordance with an embodiment of the present invention. As indicated by the negligible slope of the correlation line, the etch rate is substantially the same with increasing density. A semiconductor material etched in this manner may suffer less detriment from over-etch because the etch process may be completed in all portions of the sample at substantially the same time.
• Reaction gas species used to generate the plasma may be consumed during the ON state of a duty cycle in a pulsed plasma etch process, potentially lending to plasma modification, hi some instances, the plasma modification may be substantial enough to alter the etching characteristics of the plasma. This effect may be detrimental on attempts to conduct a controlled etching process.
• plasma modification may be mitigated.
• replenishing the reaction gas during the ON state of a plasma in a pulsed plasma etch process may cause a plasma species gradient to form, lending to inconsistent etching across a sample.
• a substantially homogeneous plasma may be achieved during the ON state of the duty cycle by replenishing the reaction gas during the OFF state of the duty cycle only.
• a pulsed reaction gas replenish process is conducted in parallel with the pulsed plasma process. That is, the reaction gas replenish is implemented during the OFF state, but not during the ON state, of a duty cycle in a pulsed plasma etch process.
• a semiconductor stack may be etched by a pulsed plasma etch process with pulsed reaction gas replenish.
• Figures 4A-C illustrate cross-sectional views representing the effects of a significant reduction in micro-loading during a pulsed etch process with pulsed reaction gas replenish conducted on a semiconductor stack, in accordance with an embodiment of the present invention.
• a semiconductor stack 400 comprises a substrate 402, an etch layer 404 and a mask 406.
• Mask 406 is patterned with a low density region 408, a medium density region 410 and a high density region 412.
• Semiconductor stack 400 may comprise a stack of greater complexity of material layers and/or pattern types, but is depicted in the manner shown herein for illustrative purposes.
• Substrate 402 may comprise any material that can withstand a manufacturing process and upon which semiconductor layers may suitably reside.
• substrate 402 is comprised of group IV-based materials such as crystalline silicon, germanium or silicon/germanium.
• the atomic concentration of silicon atoms in substrate 402 is greater than 99%.
• substrate 402 is comprised of a III- V material such as, but not limited to, gallium nitride, gallium phosphide, gallium arsenide, indium phosphide, indium antimonide, indium gallium arsenide, aluminum gallium arsenide, indium gallium phosphide or a combination thereof.
• substrate 402 is comprised of an epitaxial layer grown atop a distinct crystalline substrate, e.g. a silicon epitaxial layer grown atop a boron-doped bulk silicon mono-crystalline substrate.
• Substrate 402 may also comprise an insulating layer in between a bulk crystal substrate and an epitaxial layer to form, for example, a silicon-on-insulator substrate.
• the insulating layer is comprised of a material selected from the group consisting of silicon dioxide, silicon nitride, silicon oxy-nitride and a high-k dielectric layer.
• substrate 402 comprises a top insulating layer, directly adjacent to etch layer 404.
• Substrate 402 may additionally comprise charge-carrier dopant impurity atoms.
• substrate 402 is comprised of silicon and/or germanium and the charge- carrier dopant impurity atoms are selected from the group consisting of boron, arsenic, indium, antimony or phosphorus.
• substrate 402 is comprised of a III-V material and the charge-carrier dopant impurity atoms are selected from the group consisting of carbon, silicon, germanium, oxygen, sulfur, selenium or tellurium.
• Etch layer 404 may comprise any material that can be suitably patterned into an array of distinctly defined semiconductor structures.
• etch layer 404 is comprised of a group rV-based material or a III-V material, such as those discussed above in association with substrate 402. Additionally, etch layer 404 may comprise any morphology that can suitably be patterned into an array of distinctly defined semiconductor structures, hi an embodiment, the morphology of etch layer 404 is selected from the group consisting of amorphous, single-crystalline and poly-crystalline. In one embodiment, etch layer 404 comprises charge-carrier dopant impurity atoms, such as those described above in association with substrate 402. [0029] The composition of etch layer 404 need not be limited to semiconductor materials, per se.
• etch layer 404 is comprised of a metal layer such as but not limited to copper, aluminum, tungsten, metal nitrides, metal carbides, metal suicides, hafnium, zirconium, titanium, tantalum, aluminum, ruthenium, palladium, platinum, cobalt, nickel or conductive metal oxides, e.g. ruthenium oxide, hi yet another embodiment of the present invention, etch layer 404 is comprised of an insulating layer.
• a metal layer such as but not limited to copper, aluminum, tungsten, metal nitrides, metal carbides, metal suicides, hafnium, zirconium, titanium, tantalum, aluminum, ruthenium, palladium, platinum, cobalt, nickel or conductive metal oxides, e.g. ruthenium oxide, hi yet another embodiment of the present invention, etch layer 404 is comprised of an insulating layer.
• etch layer 404 is comprised of an insulating material selected from the group consisting of silicon dioxide, silicon oxy-nitride and silicon nitride, hi another embodiment, etch layer 404 is comprised of a high-K dielectric layer selected from the group consisting of hafnium oxide, hafnium silicate, lanthanum oxide, zirconium oxide, zirconium silicate, tantalum oxide, barium strontium titanate, barium titanate, strontium titanate, yttrium oxide, aluminum oxide, lead scandium tantalum oxide and lead zinc niobate.
• Mask 406 may be comprised of any material suitable for patterning via a lithography or direct- write process.
• mask 406 is comprised of a photo-resist material, hi a specific embodiment, the photo-resist material is used in a lithographic process and is selected from the group consisting of a positive photo- resist and a negative photo-resist.
• Mask 406 may further comprise a material suitable for blocking a plasma etch process, such as a plasma etch process used to pattern etch layer 404.
• mask 406 also comprises a hard-mask layer, such as a hard-mask layer selected from the group consisting of silicon dioxide, silicon oxy-nitride, silicon nitride and a metal film.
• a hard-mask layer selected from the group consisting of silicon dioxide, silicon oxy-nitride, silicon nitride and a metal film.
• the pattern of mask 406 is etched into etch layer 404 with a pulsed plasma etch process having pulsed reaction gas replenish to form partially patterned etch layer 414.
• the etch rate of all density regions 408, 410 and 412 are substantially similar when a pulsed plasma process with pulsed reaction gas replenish is employed, as depicted in Figure 4B.
• the pulsed plasma process with pulsed reaction gas replenish contains a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of the etching plasma.
• a reaction gas replenish step is implemented during the OFF state of the duty cycle, but not during the ON state of the duty cycle.
• a duty cycle may be comprised of one ON state and one OFF state, wherein the durations of the ON state and OFF state are suitable to transfer the pattern of mask 406 into etch layer 404 at a substantially similar etch rate for density regions 408, 410 and 412.
• the portion of each duty cycle comprised of said ON state is in the range of 5 - 95% of the duty cycle.
• the portion of each duty cycle comprised of said ON state is in the range of 65 - 75% of the duty cycle.
• the frequency of a plurality of duty cycles is in the range of IHz - 200 kHz, i.e. each duty cycle has a duration in the range of 5 micro-seconds - 1 second.
• the frequency of a plurality of duty cycles is 50 kHz and the portion of each duty cycle comprised of said ON state is 70%.
• the quantity and duration of the reaction gas replenish implemented during the OFF state of the plasma are such that, as a result of the reaction gas being replenished during the OFF state, the composition of gaseous species of the plasma at the end of a pulsed plasma process is within 1% of the composition of gaseous species of a plasma at the beginning of the pulsed plasma process.
• the pressure of the plasma at the end of the pulsed plasma process is within 1 mTorr of the pressure of the plasma at the beginning of the pulsed plasma process.
• the method of generating a plasma for use in the pulsed plasma process with pulsed reaction gas replenish for etching etch layer 404 may comprise any method suitable to strike and maintain the plasma for a duration sufficient to satisfy the duration of the ON state in a duty cycle.
• the method of generating the plasma comprises generating a plasma selected from the group consisting of an electron cyclotron resonance (ECS) plasma, a helicon wave plasma, an inductively coupled plasma (ICP) and a surface wave plasma, hi a specific embodiment, the method of generating the plasma comprises generating an inductively coupled plasma in an Applied MaterialsTM AdvantEdge G3 etcher.
• the plasma generated for the pulsed plasma etch process with pulsed reaction gas replenish may be comprised of any reaction gas suitable to generate ions and reactive radicals to remove portions of etch layer 404 without detrimentally impacting the pattern of mask 406.
• the reaction gas is comprised of a halide species and is used to etch a silicon-based material.
• the reaction gas is comprised of the species HBr, He and a 70%/30% He/O 2 mixture in the approximate ratio of 300:50:12, respectively, and the pulsed plasma is used to etch amorphous silicon, poly-silicon or single-crystal silicon.
• the reaction gas is comprised of a fluorocarbon species and is used to etch a dielectric layer, hi a specific embodiment, the reaction gas is comprised of the species CF 4 and the pulsed plasma is used to etch silicon dioxide or carbon-doped silicon oxide.
• the reaction gas may have a pressure suitable to provide a controlled etch rate. In an embodiment, the pressure is in the range of 1 - 100 mTorr. In another embodiment, the pressure is in the range of 3 - 100 mTorr.
• the reaction gas is comprised of HBr, He and O 2
• the pressure of the reaction gas is in the range of 30 - 50 mTorr
• the etch rate of poly-silicon is in the range of 500 - 6000 Angstroms/minute.
• FIG. 5 A is a flowchart and Figure B is a waveform, both representing a series of such targeted steps in a pulsed plasma process with pulsed reaction gas replenish, in accordance with an embodiment of the present invention.
• Figures 6A-D illustrate cross-sectional views representing the steps of the flowchart from Figure 5 A as performed on a semiconductor stack.
• a semiconductor stack 600 comprises a substrate 602, an etch layer 604 and a mask 606 at the start of a pulsed plasma etching process having pulsed reaction gas replenish.
• Mask 606 is patterned with a low density region 608, a medium density region 610 and a high density region 612.
• Substrate 602, etch layer 604 and mask 606 may be comprised of any materials described in association with substrate 402, etch layer 404 and mask 406, respectively, from Figure 4A.
• Semiconductor stack 600 may comprise a stack of greater complexity of material layers and/or pattern types, but is depicted in the manner shown herein for illustrative purposes.
• the pattern of mask 606 is partially etched into etch layer 604 during the ON state of a duty cycle in a pulsed plasma etch process with pulsed reaction gas replenish to form partially patterned etch layer 614A.
• Unmasked portions of etch layer 604 are accessible by plasma etching species 620 while masked portions of etch layer 604, covered by mask 606, are protected from plasma etching species 620, as depicted in Figure 6B.
• Etch by-products 616 are generated within reaction region 618 of semiconductor stack 600.
• Etching species 620 may be comprised of any charged species and reactive neutrals ejected from the plasma used in a pulsed plasma etch process.
• etching species 620 are comprised of positively charged ions and radicals
• the reaction gas is comprised of HBr, He and O 2 and the etching species 620 are selected from the group consisting of H + , Br + , He + , O + , H, Br and O.
• the reaction gas is comprised of a fluorocarbon and the etching species 620 are selected from the group consisting of F + , CF + , CF 2 + , CF 3 + , F, CF, CF 2 and CF 3 .
• Etch by-products 616 may be comprised of any combination of atoms from etch layer 604 and etching species 620.
• the duration of the ON state of a duty cycle may be selected to maximize etch efficiency while maintaining a substantially similar etch rate for all density regions 608, 610 and 612 of partially patterned etch layer 614A.
• etch by-products 616 are formed and reside, at least for a time, among the partially etched features of partially patterned etch layer 614A, i.e. within reaction region 618.
• Reaction region 618 is a region adjacent semiconductor stack 600 within which etch by-products 616 that are formed may interfere with plasma etching species 620. That is, as the amount of etch by-products 616 increases within reaction region 618 throughout the lifetime of an ON cycle, plasma etching species 620 may be hindered from accessing unmasked portions of partially patterned etch layer 604.
• the ON state of a duty cycle in a pulsed plasma etch process with pulsed reaction gas replenish is selected to be less than or, at most, correspond with the time at which a sufficient amount of etch by-products are generated to slow the etch rate of a high density region versus the etch rate of a low density region.
• the duration of the ON state is selected to substantially match the time at which the etch rate of the partially patterned etch layer 614A becomes dependent on the density of the pattern of mask 606.
• the ON state is of a sufficiently short duration to substantially inhibit micro-loading within reaction region 618.
• the duration of the ON state is within any of the ranges described for the ON state of the duty cycle discussed in association with Figure 4B.
• a reaction gas replenish step is implemented during the OFF state of the duty cycle, but not during the ON state of the duty cycle.
• the duration of the OFF state of a duty cycle may be selected to allow a sufficient time for etch by-products 616 to be removed from (i.e. dissipated from or evacuated from) reaction region 618.
• etch by-products 616 are formed within reaction region 618, as described above.
• negatively charged ions maybe ejected from the plasma gas as it neutralizes, generating a new set of etching species. These new etching species may further contribute to the quantity of etch byproducts present in reaction region 618.
• the concentration of by-products 616 may be substantially greater inside reaction region 618 than outside of reaction region 618.
• a natural diffusion gradient may form and etch byproducts 616 may diffuse outside of reaction region 618.
• This process maybe enhanced by an additional pressure gradient. That is, along with a build-up in etch byproducts 616 during the ON state, the pressure within reaction region 618 may become greater than the pressure outside of reaction region 618, enhancing the extrusion of etch by-products 616.
• the OFF state of a duty cycle in a pulsed plasma etch process with pulsed reaction gas replenish is selected to be of a sufficiently long duration to substantially enable removal of a set of etch by-products 616 from reaction region 618.
• the quantity of etch by-products 616 removed is sufficient such that any etch by-products that remain within reaction region 618 do not substantially interfere with etching species during an ON state of a subsequent duty cycle.
• the duration of the OFF state is selected to substantially match the time at which more than 50% of the etch by-products 616 have been removed from reaction region 618.
• the duration of the OFF state is selected to substantially match the time at which more than 75% of the etch by-products 616 have been removed from reaction region 618. In an alternative embodiment, the duration of the OFF state is within any of the ranges described for the OFF state of the duty cycle discussed in association with Figure 4B. In an embodiment, an inert gas such as Ar or He is injected during the OFF state of the plasma to enhance the by-product removal.
• an inert gas such as Ar or He is injected during the OFF state of the plasma to enhance the by-product removal.
• the duration of the OFF state of a duty cycle may further be selected to allow a sufficient reaction gas replenish step to be implemented.
• a reaction gas replenish step may be implemented during the OFF state of the duty cycle, without requiring implementation during the ON state of the duty cycle.
• the quantity and duration of the reaction gas replenish implemented during the OFF state of the plasma are such that, as a result of the reaction gas being replenished during the OFF state, the composition of gaseous species of the plasma at the end of a pulsed plasma process is within 1% of the composition of gaseous species of a plasma at the beginning of the pulsed plasma process.
• the pressure of the plasma at the end of the pulsed plasma process is within 1 mTorr of the pressure of the plasma at the beginning of the pulsed plasma process.
• the pattern of mask 606 is continued to be etched into etch layer 604 during subsequent duty cycles of a pulsed plasma etch process with pulsed reaction gas replenish, forming more extensively etched partially patterned etch layer 614B.
• the duty cycles i.e. step 508 may be repeated until a desired amount of etch layer 604 has been etched.
• a portion of etch layer 604 is removed with a pulsed plasma etch process comprising a plurality of duty cycles.
• a reaction gas replenish step is implemented during the OFF state of the duty cycle, but not during the ON state of the duty cycle.
• Figure 5B illustrates the timeline of a duty cycle, as represented in a waveform.
• the pulsed plasma etch process with pulsed reaction gas replenish is terminated following removal of a desired quantity of etch layer 604.
• the etch process is completed at density regions 608, 610 and 612 at substantially the same time.
• only a negligible amount of over- etching may be required in order to form patterned etch layer 624.
• detrimental undercutting of the various structures of patterned etch layer 624 may be significantly mitigated, as depicted by the lack of undercut in Figure 6F.
• the determination of when to terminate the pulsed plasma process having pulsed reaction gas replenish may be made by any suitable factor.
• the termination of the pulsed plasma etch process with pulsed reaction gas replenish is determined by ending the repetition of duty cycles at a predetermined time.
• the termination of the pulsed plasma etch process with pulsed reaction gas replenish is determined by detecting a change in etch by-products 612 at the completion of the etching of etch layer 604 and the corresponding exposure of the top surface of substrate 602.
• the termination of the pulsed plasma etch process with pulsed reaction gas replenish is determined by measuring the depth of a trench using an interferometric technique.
• a pulsed plasma etch process with pulsed reaction gas replenish may be combined with a continuous plasma etch process.
• a differential in etch rate for differing density regions of a semiconductor stack may not be significant until a portion of the semiconductor stack has already been etched, since the etch process may suffer from more severe micro-loading with increased aspect ratio of a pattern.
• a semiconductor stack is etched with a continuous plasma etch process until a desired depth has been reached.
• the etching of the semiconductor stack is then completed by utilizing a pulsed plasma etch process with pulsed reaction gas replenish.
• a continuous/pulsed plasma etch process with pulsed reaction gas replenish is utilized to increase the throughput of wafers in a single- wafer processing tool.
• This continuous/pulsed plasma etch process with pulsed reaction gas replenish is illustrated in Figures 7A-C, in accordance with an embodiment of the present invention.
• Etch layer 704 patterned with mask 712 Figure 7A
• Figure 7B is partially patterned with a continuous plasma etch process
• a pulsed plasma etch process with pulsed reaction gas replenish is subsequently employed to complete etching etch layer 704, i.e. until the etch stops on etch-stop layer 706, as depicted in Figure 7C.
• the depth at which the plasma etch process is changed from continuous to pulsed is selected as being in the range of 0.5 - 4 times the spacing width of the region of highest structure density. In one embodiment, the depth is selected as being substantially equal to the spacing width of the region of highest structure density, i.e. when an aspect ratio of 1 has been achieved among the highest density structures.
• Figure 8 is a flowchart representing a series of steps combining a continuous plasma etch process with a subsequent pulsed plasma etch process with pulsed reaction gas replenish, in accordance with an embodiment of the present invention.
• Figures 9A-D illustrate cross-sectional views representing the steps of the flowchart from Figure 8 as performed on a more complex semiconductor stack.
• a semiconductor stack 900 comprises a substrate 902, two etch layers 904 and 908, two dielectric layers 906 and 910 and a mask 912 at the start of a continuous/pulsed plasma etching process.
• Substrate 902, etch layers 904 and 908 and mask 912 may be comprised of any materials described in association with substrate 902, etch layer 904 and mask 912, respectively, from Figure 4A.
• Semiconductor stack 900 may comprise a stack of greater or lesser complexity of material layers, but is depicted in the manner shown herein for illustrative purposes, hi one embodiment, semiconductor stack 900 is comprised of poly-silicori/SiON/poly-silicon/SiC ⁇ , as is found in a typical Flash memory stack.
• Dielectric layers 906 and 910 may be comprised of any material suitable to insulate conductive portions of a semiconductor stack.
• dielectric layers 906 and 910 are comprised of an insulating material selected from the group consisting of silicon dioxide, silicon oxy-nitride and silicon nitride.
• dielectric layers 906 and 910 are comprised of a high-K dielectric layer selected from the group consisting of hafnium oxide, hafnium silicate, lanthanum oxide, zirconium oxide, zirconium silicate, tantalum oxide, barium strontium titanate, barium titanate, strontium titanate, yttrium oxide, aluminum oxide, lead scandium tantalum oxide and lead zinc niobate.
• a high-K dielectric layer selected from the group consisting of hafnium oxide, hafnium silicate, lanthanum oxide, zirconium oxide, zirconium silicate, tantalum oxide, barium strontium titanate, barium titanate, strontium titanate, yttrium oxide, aluminum oxide, lead scandium tantalum oxide and lead zinc niobate.
• the pattern of mask 912 is etched into etch layer 904 with a continuous plasma etch process to form patterned etch layer 914.
• a continuous plasma etch process may be sufficient for the etching of etch layer 904 in the case that a differential in etch rate for differing density regions of a first portion of semiconductor stack 900 is not significant.
• the method of generating a plasma for use in the continuous plasma process to form patterned etch layer 914 may comprise any method suitable to strike and maintain the plasma for a duration sufficient to satisfy the duration of the continuous etch process.
• the method of generating the continuous plasma comprises generating a plasma selected from the group consisting of an electron cyclotron resonance (ECS) plasma, a helicon wave plasma, an inductive coupled plasma (ICP) and a surface wave plasma.
• ECS electron cyclotron resonance
• ICP inductive coupled plasma
• the method of generating the continuous plasma comprises generating an inductive coupled plasma in an Applied MaterialsTM AdvantEdge G3 etcher.
• the determination of when to terminate the continuous plasma process may be made by any suitable factor.
• the termination of the continuous plasma etch process is determined by ending at a predetermined time based on characteristics of the material being etched.
• the termination of the continuous plasma etch process is determined by detecting a change in etch by-products at the completion of the etching of etch layer 904 and the corresponding exposure of the top surface of dielectric layer 906, i.e. by detecting an end-point.
• the termination of the continuous plasma etch process is determined by the real-time composition of a set of chemical species generated during the continuous etch process.
• the exposed portions of dielectric layer 906 may be removed to form patterned dielectric layer 916 following the patterning of etch layer 904.
• exposed portions of dielectric layer 906 are removed by an etch process selected from the group consisting of a wet etch process, a continuous plasma etch process and a pulsed plasma etch process.
• the pattern of mask 912 is continued to be etched into semiconductor stack 900.
• a differential in etch rate for differing density regions of etch layer 908 may be significant, requiring the application of a pulsed plasma etch process.
• a pulsed plasma etch process with pulsed reaction gas replenish is utilized to pattern etch layer 908 to form patterned etch layer 918.
• the duty cycles i.e. step 812) may be repeated until a desired amount of etch layer 908 has been etched.
• a first portion of semiconductor stack 900 is patterned with a continuous etch plasma process and a second portion of semiconductor stack 900 is patterned with a pulsed plasma etch process comprising a plurality of duty cycles.
• a reaction gas replenish step is implemented during the OFF state of each duty cycle, but not during the ON state of each duty cycle.
• the pulsed plasma etch process with pulsed reaction gas replenish is terminated following removal of a desired quantity of etch layer 908.
• patterned etch layer 918 may be formed by any suitable factor.
• the termination of the pulsed plasma etch process with pulsed reaction gas replenish is determined by ending the repetition of duty cycles at a predetermined time.
• the termination of the pulsed plasma etch process with pulsed reaction gas replenish is determined by detecting a change in etch by-products at the completion of the etching of etch layer 908 and the corresponding exposure of the top surface of dielectric layer 910.
• a first portion of a semiconductor stack is patterned with a first continuous plasma etch process
• a second portion of a semiconductor stack is patterned with a first pulsed plasma etch process having pulsed reaction gas replenish
• a third portion of a semiconductor stack is patterned with a second continuous plasma etch process
• a fourth portion of a semiconductor stack is patterned with a second pulsed plasma etch process having pulsed reaction gas replenish.
• etch layer 904 of semiconductor stack 900 is also patterned with a first continuous plasma etch process followed by a first pulsed plasma etch process having pulsed reaction gas replenish.
• Etch layer 908 is then patterned with a second continuous plasma etch process followed by a second pulsed plasma etch process having pulsed reaction gas replenish.
• a pulsed plasma etch process with pulsed reaction gas replenish may be conducted in any processing equipment suitable to provide an etch plasma in proximity to a sample for etching.
• Figure 10 illustrates a system in which a pulsed plasma etch process with pulsed reaction gas replenish is conducted, in accordance with an embodiment of the present invention.
• a system 1000 for conducting a pulsed plasma etch process comprises a chamber 1002 equipped with a sample holder 1004.
• An evacuation device 1006, a gas inlet device 1008 and a plasma ignition device 1010 are coupled with chamber 1002.
• a computing device 1012 is coupled with plasma ignition device 1010 and gas inlet device 1008.
• System 1000 may additionally include a detector 1016 coupled with chamber 1002 and a voltage source 1014 coupled with sample holder 1004.
• Computing device 1012 may also be coupled with evacuation device 1006, voltage source 1014 and detector 1016, as depicted in Figure 10.
• Chamber 1002 and sample holder 1004 may be comprised of any reaction chamber and sample positioning device suitable to contain an ionized gas, i.e. a plasma, and bring a sample in proximity to the ionized gas or charged species ejected therefrom.
• Evacuation device 1006 may be any device suitable to evacuate and de-pressurize chamber 1002.
• Gas inlet device 1008 may be any device suitable to inject a reaction gas into chamber 1002.
• Plasma ignition device 1010 may be any device suitable for igniting a plasma derived from the reaction gas injected into chamber 1002 by gas inlet device 1008.
• Detection device 1016 may be any device suitable to detect an end-point of a processing step.
• system 1000 comprises a chamber 1002, a sample holder 1004, an evacuation device 1006, a gas inlet device 1008, a plasma ignition device 1010 and a detector 1016 similar to, or the same as, those included in an Applied MaterialsTM AdvantEdge G3 etcher, hi another embodiment, multiple gas inlet devices are coupled with chamber 1002 in order to optimize a pulsed reaction gas replenish process.
• Computing device 1012 comprises a processor and a memory
• the memory of computing device 1012 includes a set of instructions for controlling plasma ignition device 1010 to switch between an ON state and an OFF state of a plasma in a pulsed plasma etch process with pulsed reaction gas refresh, hi an embodiment, the set of instructions contains machine operable code capable of effecting a plurality of duty cycles, wherein each duty cycle represents the combination of one ON state and one OFF state of the plasma.
• the memory of computing device 1012 also includes a set of instructions for controlling gas inlet device 1008 to switch between an open state and a closed state.
• the set of instructions for controlling plasma ignition device 1010 includes timing instructions for each duty cycle to have an ON state in the range of 5 - 95% of the duration of the duty cycle.
• the set of instructions for controlling plasma ignition device 1010 includes timing instructions for each duty cycle to have an ON state in the range of 65 - 75% of the duration of the duty cycle, hi another embodiment, the set of instructions for controlling plasma ignition device 1010 includes timing instructions such that the frequency of a plurality of duty cycles is in the range of IHz - 200 kHz, i.e.
• FIGS 1 IA-B illustrate the chamber from the system of Figure 10 in a plasma ON state and a plasma OFF state, respectively, in accordance with an embodiment of the present invention.
• chamber 1002 of system 1000 comprises a plasma 1100 in an ON state and in proximity to a sample 1102 on sample holder 1004.
• a reaction region 1104 is directly adjacent to sample 1102.
• the set of instructions for controlling plasma ignition device 1010 includes timing instructions such that the ON state is of a sufficiently short duration to substantially inhibit micro-loading within reaction region 1104.
• chamber 1002 of system 1000 comprises a plasma in an OFF state (i.e. a neutral reaction gas)
• the set of instructions for controlling plasma ignition device 1010 includes timing instructions such that the OFF state of a duty cycle in a pulsed plasma etch process is selected to be of a sufficiently long duration to substantially enable removal of a set of etch byproducts from reaction region 1104.
• Reaction gas species used to generate the plasma may be consumed during the ON state of a duty cycle in a pulsed plasma etch process, potentially lending to plasma modification.
• the plasma modification may be substantial enough to alter the etching characteristics of the plasma. This effect may be detrimental on attempts to conduct a controlled etching process.
• replenishing the reaction gas during the etching process plasma modification may be mitigated.
• replenishing the reaction gas during the ON state of a plasma in a pulsed plasma etch process may cause a plasma species gradient to form, lending to inconsistent etching across a sample.
• Figures 12A-B illustrate the chamber from the system of Figure 10 in a plasma ON/gas inlet device OFF state and a plasma OFF/gas inlet device ON state, respectively, in accordance with an embodiment of the present invention.
• a substantially homogeneous plasma is achieved during the ON state of the duty cycle by replenishing the reaction gas during the OFF state of the duty cycle only.
• the reaction gas on which the plasma from Figure 12A is based is replenished during the OFF state of the plasma.
• a pulsed reaction gas replenish process is conducted in parallel with the pulsed plasma process. That is, the reaction gas replenish is implemented during the OFF state, but not during the ON state, of a duty cycle in a pulsed plasma etch process.
• a pulsed sample bias process is conducted in parallel with the pulsed plasma process having pulsed reaction gas replenish. That is, the sample is negatively biased during the ON state and is zero-biased during the OFF state of a duty cycle in a pulsed plasma etch process having pulsed reaction gas replenish.
• FIGS 13 A-D illustrate chamber 1002 from system 1000 of Figure 10 in a plasma ON/bias OFF state, a plasma ON/bias ON state, a plasma OFF/bias ON state and a plasma OFF/bias OFF state, respectively, in accordance with an embodiment of the present invention.
• a voltage source 1014 is coupled with sample holder 1004 and is used to bias sample holder 1004, and hence sample 1102, during the ON state of a duty cycle.
• voltage source 1014 is in an OFF state and positively charged etch species ejected from plasma 1100 are partially deflected near the surface of sample 1102.
• voltage source 1014 is in an ON state (i.e.
• voltage source 1014 is used to apply a negative bias to sample holder 1004 in the range of 100 - 200 Watts during the ON state of a duty cycle.
• a pulsed plasma etch process (as compared with a continuous plasma etch process) may reduce the extent of positive charge build-up on sample 1102 during an etch process.
• the additional step of biasing sample holder 1004 with voltage source 1014 may still be utilized as part of the pulsed plasma etch process having pulsed reaction gas replenish in order to optimize the mitigation of undercutting of structures during the etch process. Therefore, in accordance with another embodiment of the present invention, the additional step of biasing sample holder 1004 with voltage source 1014 is used to extend the duration of the ON state of a duty cycle in a pulsed plasma etch process with pulsed reaction gas replenish. [0064] Referring to Figure 13 C, voltage source 1014 is in an ON state and negatively-charged particles ejected during the transition from plasma ON state to plasma OFF state are inhibited from approaching the surface of sample 1102, thus slowing the plasma OFF state step.
• voltage source 1014 is in an OFF state (i.e. zero-biasing sample holder 1004) and, thus, negatively- charged particles ejected during the transition from plasma ON state to plasma OFF state are inhibited from approaching the surface of sample 1102.
• voltage source 1014 is turned off in order to apply a zero bias to sample holder 1004 during the OFF state of a duty cycle.
• sample holder 1004 is negatively biased with voltage source 1014 to extend the duration of the ON state of a duty cycle in a pulsed plasma etch process with pulsed reaction gas replenish, while sample holder 1004 is zero-biased with voltage source 1014 to reduce the duration of the OFF state of the duty cycle.
• a pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures has been disclosed.
• a portion of a sample is removed by applying a pulsed plasma etch process.
• the pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma.
• the plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state.
• a first portion of a sample is removed by applying a continuous plasma etch process.
• the continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process with pulsed reaction gas replenish.
• the pulsed reaction gas replenish process need not be tied to the pulsed plasma process.
• the ON state of the pulsed plasma duty cycle and the OFF state of the pulsed reaction gas replenish are independent from one another.
• the OFF state of the pulsed plasma duty cycle and the ON state of the pulsed reaction gas replenish are independent from one another.

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