JP5538379B2 - 大型足部リフトピン - Google Patents
大型足部リフトピン Download PDFInfo
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- JP5538379B2 JP5538379B2 JP2011516457A JP2011516457A JP5538379B2 JP 5538379 B2 JP5538379 B2 JP 5538379B2 JP 2011516457 A JP2011516457 A JP 2011516457A JP 2011516457 A JP2011516457 A JP 2011516457A JP 5538379 B2 JP5538379 B2 JP 5538379B2
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- pin
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- lift
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- 239000000758 substrate Substances 0.000 claims description 67
- 230000007704 transition Effects 0.000 claims description 7
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (13)
- 基板支持部に関して基板を位置決めするためのリフトピンアセンブリであって、
第1の端部と第2の端部とを有するピンシャフト、
前記基板を支持するための前記ピンシャフトの第1の端部と結合されるピン頭部、および
前記ピンシャフトの第2の端部に形成される肩部を含む、
リフトピンと、
前記リフトピンが挿入される貫通孔を有する円筒体であって、前記ピンシャフトとスライド可能に結合される円筒体と、
前記円筒体が前記シャフトに沿ってスライドすることを防止するための係止ピンとを含み、
前記肩部は、前記係止ピンを受け入れる寸法に形成された貫通穴を有し、
前記円筒体は、
前記円筒体の底部を規定する第1の表面と、
前記円筒体の頂部を規定する第2の表面とを含み、
前記円筒体の貫通孔は、前記リフトピンの前記肩部を受け入れる寸法に形成された第1の直径と、前記リフトピンの前記肩部および前記肩部の前記貫通穴に挿入されるときの前記係止ピンの両方を受け入れる寸法に形成された第2の直径とを有する、リフトピンアセンブリ。 - 前記肩部は、前記ピンシャフトの直径よりも大きい直径を有する、請求項1に記載のリフトピンアセンブリ。
- 前記肩部は、前記リフトピンの長さの約1/3の長さを有する、請求項1に記載のリフトピンアセンブリ。
- 前記肩部の貫通穴の中心から前記肩部の端部までの距離は、前記肩部の長さの約1/4である、請求項3に記載のリフトピンアセンブリ。
- 前記円筒体はさらに、前記貫通穴の前記第1の直径と前記貫通穴の前記第2の直径との間の移行点に形成される階段状表面を含み、前記階段状表面は、前記係止ピンが前記肩部の前記貫通穴に挿入されるとき、前記係止ピンの上に載る、請求項1に記載のリフトピンアセンブリ。
- 前記第1の直径を有する前記貫通穴は、前記円筒体の前記第2の表面から前記円筒体を部分的に通って延び、前記貫通穴の前記第2の直径は、前記円筒体の前記第1の表面から前記階段状表面が形成される前記移行点まで延びる、請求項5に記載のリフトピンアセンブリ。
- 前記ピン頭部は、平坦部分が前記ピン頭部の中央頂部領域に位置するところの凸状支持表面を有する、請求項1に記載のリフトピンアセンブリ。
- 前記凸状支持表面および前記平坦部分は一般に円形領域である、請求項7に記載のリフトピンアセンブリ。
- 基板をその上方で操作するための基板支持アセンブリであって、
第1の端部と第2の端部とを有するピンシャフト、
前記基板を支持するための前記ピンシャフトの第1の端部と結合されるピン頭部、および
前記ピンシャフトの第2の端部に形成される肩部を含む、
リフトピンと、
前記リフトピンが挿入される貫通孔を有する円筒体であって、前記ピンシャフトとスライド可能に結合される円筒体と、
前記円筒体が前記シャフトに沿ってスライドすることを防止するための係止ピンを含み、前記肩部は、前記係止ピンを受け入れる寸法に形成された貫通穴を有する、
リフトピンアセンブリと、
それを通って配置される複数のガイド穴を有する基板支持部であって、各ガイド穴は、
前記リフトピンアセンブリのリフトピンを受け入れるためである基板支持部と、
リフトプレートと、
前記リフトプレートの高さを制御するためのアクチュエータを含み、
前記円筒体は、
前記円筒体の底部を規定する第1の表面と、
前記円筒体の頂部を規定する第2の表面とを含み、
前記円筒体の貫通孔は、前記リフトピンの前記肩部を受け入れる寸法に形成された第1の直径と、前記リフトピンの前記肩部および前記肩部の前記貫通穴に挿入されるときの前記係止ピンの両方を受け入れる寸法に形成された第2の直径とを有する、基板支持アセンブリ。 - 前記円筒体はさらに、前記貫通穴の前記第1の直径と前記貫通穴の前記第2の直径との間の移行点に形成される階段状表面を含み、前記階段状表面は、前記係止ピンが前記肩部の前記貫通穴に挿入されるとき、前記係止ピンの上に載る、請求項9に記載の基板支持アセンブリ。
- 前記第1の直径を有する前記貫通穴は、前記円筒体の前記第2の表面から前記円筒体を部分的に通って延び、前記貫通穴の前記第2の直径は、前記円筒体の前記第1の表面から前記階段状表面が形成される前記移行点まで延びる、請求項10に記載の基板支持アセンブリ。
- 前記円筒体の直径は、前記ピンシャフトの直径よりも大きい、請求項9に記載の基板支持アセンブリ。
- 前記リフトピンおよび前記円筒体は、セラミック材料を含む、請求項12に記載の基板支持アセンブリ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7522508P | 2008-06-24 | 2008-06-24 | |
US61/075,225 | 2008-06-24 | ||
US12/483,845 | 2009-06-12 | ||
US12/483,845 US20090314211A1 (en) | 2008-06-24 | 2009-06-12 | Big foot lift pin |
PCT/US2009/047690 WO2010008747A2 (en) | 2008-06-24 | 2009-06-17 | Big foot lift pin |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011525717A JP2011525717A (ja) | 2011-09-22 |
JP5538379B2 true JP5538379B2 (ja) | 2014-07-02 |
Family
ID=41429942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011516457A Active JP5538379B2 (ja) | 2008-06-24 | 2009-06-17 | 大型足部リフトピン |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090314211A1 (ja) |
JP (1) | JP5538379B2 (ja) |
KR (1) | KR20110036915A (ja) |
CN (1) | CN102077339B (ja) |
TW (1) | TWI482235B (ja) |
WO (1) | WO2010008747A2 (ja) |
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JP4951536B2 (ja) * | 2007-03-27 | 2012-06-13 | 東京エレクトロン株式会社 | 基板載置台及び基板処理装置 |
-
2009
- 2009-06-12 US US12/483,845 patent/US20090314211A1/en not_active Abandoned
- 2009-06-17 JP JP2011516457A patent/JP5538379B2/ja active Active
- 2009-06-17 WO PCT/US2009/047690 patent/WO2010008747A2/en active Application Filing
- 2009-06-17 CN CN200980124224.0A patent/CN102077339B/zh not_active Expired - Fee Related
- 2009-06-17 KR KR1020117001815A patent/KR20110036915A/ko not_active Application Discontinuation
- 2009-06-24 TW TW098121222A patent/TWI482235B/zh active
Also Published As
Publication number | Publication date |
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TW201017812A (en) | 2010-05-01 |
KR20110036915A (ko) | 2011-04-12 |
TWI482235B (zh) | 2015-04-21 |
JP2011525717A (ja) | 2011-09-22 |
WO2010008747A2 (en) | 2010-01-21 |
CN102077339A (zh) | 2011-05-25 |
US20090314211A1 (en) | 2009-12-24 |
CN102077339B (zh) | 2014-06-04 |
WO2010008747A3 (en) | 2010-03-18 |
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