JP5535003B2 - 半導体ウエハ冷却装置 - Google Patents

半導体ウエハ冷却装置 Download PDF

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Publication number
JP5535003B2
JP5535003B2 JP2010182728A JP2010182728A JP5535003B2 JP 5535003 B2 JP5535003 B2 JP 5535003B2 JP 2010182728 A JP2010182728 A JP 2010182728A JP 2010182728 A JP2010182728 A JP 2010182728A JP 5535003 B2 JP5535003 B2 JP 5535003B2
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JP
Japan
Prior art keywords
cooling
semiconductor wafer
tray
mounting surface
cooling pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010182728A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012043916A (ja
Inventor
貴也 野口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010182728A priority Critical patent/JP5535003B2/ja
Priority to CN201410488398.8A priority patent/CN104362113A/zh
Priority to CN2011101809113A priority patent/CN102376527A/zh
Priority to DE102011079806.4A priority patent/DE102011079806B4/de
Priority to KR1020110078919A priority patent/KR101294114B1/ko
Publication of JP2012043916A publication Critical patent/JP2012043916A/ja
Application granted granted Critical
Publication of JP5535003B2 publication Critical patent/JP5535003B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2010182728A 2010-08-18 2010-08-18 半導体ウエハ冷却装置 Active JP5535003B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010182728A JP5535003B2 (ja) 2010-08-18 2010-08-18 半導体ウエハ冷却装置
CN201410488398.8A CN104362113A (zh) 2010-08-18 2011-06-30 半导体晶片冷却装置
CN2011101809113A CN102376527A (zh) 2010-08-18 2011-06-30 半导体晶片冷却装置
DE102011079806.4A DE102011079806B4 (de) 2010-08-18 2011-07-26 Halbleiterwafer-Kühlvorrichtung
KR1020110078919A KR101294114B1 (ko) 2010-08-18 2011-08-09 반도체 웨이퍼 냉각장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010182728A JP5535003B2 (ja) 2010-08-18 2010-08-18 半導体ウエハ冷却装置

Publications (2)

Publication Number Publication Date
JP2012043916A JP2012043916A (ja) 2012-03-01
JP5535003B2 true JP5535003B2 (ja) 2014-07-02

Family

ID=45557470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010182728A Active JP5535003B2 (ja) 2010-08-18 2010-08-18 半導体ウエハ冷却装置

Country Status (4)

Country Link
JP (1) JP5535003B2 (zh)
KR (1) KR101294114B1 (zh)
CN (2) CN104362113A (zh)
DE (1) DE102011079806B4 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018125461A (ja) * 2017-02-02 2018-08-09 東京エレクトロン株式会社 被加工物の処理装置
JP7330017B2 (ja) * 2019-08-22 2023-08-21 東京エレクトロン株式会社 熱媒体巡回システム及び熱媒体巡回システムの制御方法
CN112917108B (zh) * 2021-03-15 2022-05-27 宁波江丰电子材料股份有限公司 一种冷却盘体及其加工方法和用途

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0287630A4 (en) 1986-10-08 1989-07-25 Varian Associates METHOD AND DEVICE FOR SCANING WITH A CONSTANT INCLINATION ANGLE IN ION RAY SYSTEMS.
KR960006958B1 (ko) * 1993-02-06 1996-05-25 현대전자산업주식회사 이시알 장비
DE19600401A1 (de) 1996-01-08 1997-07-17 Siemens Ag Halbleiterbauelement
WO1998005060A1 (en) * 1996-07-31 1998-02-05 The Board Of Trustees Of The Leland Stanford Junior University Multizone bake/chill thermal cycling module
JPH10312764A (ja) * 1997-05-10 1998-11-24 Nissin High Voltage Co Ltd 電子線照射用被処理物搬送装置
JP2000092815A (ja) * 1998-09-10 2000-03-31 Canon Inc ステージ装置および該ステージ装置を用いた露光装置
JP4432139B2 (ja) * 1999-01-25 2010-03-17 株式会社ニコン ステージ装置及び露光装置
JP4418051B2 (ja) * 1999-06-16 2010-02-17 平田機工株式会社 熱処理装置
JP2002075889A (ja) * 2000-09-01 2002-03-15 Tokyo Electron Ltd 熱処理装置
KR100741896B1 (ko) * 2000-10-18 2007-07-23 엘지.필립스 엘시디 주식회사 액정 디스플레이 패널 제조 방법
JP2002372351A (ja) * 2001-06-14 2002-12-26 Ibiden Co Ltd 支持容器および半導体製造・検査装置
KR20050068778A (ko) * 2003-12-30 2005-07-05 동부아남반도체 주식회사 반도체 기판용 냉각장치
KR100730381B1 (ko) 2005-12-06 2007-06-19 (주)대하이노텍 반도체 및 액정모듈 제조 공정용 정전척
KR20070102918A (ko) * 2006-10-16 2007-10-22 삼성전자주식회사 온도조절이 가능한 웨이퍼 척 장치 및 이를 이용한 웨이퍼척 온도조절방법
US7528392B2 (en) * 2006-11-27 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for low-temperature ion implantation
JP4965287B2 (ja) * 2007-03-14 2012-07-04 東京エレクトロン株式会社 載置台
KR100854974B1 (ko) * 2007-04-25 2008-08-28 (주)리드 기판 캐리어 및 그것을 사용하는 발광다이오드 제조를 위한장치
JP5121322B2 (ja) * 2007-06-15 2013-01-16 株式会社東京精密 プローバおよびプローバのウエハチャックの温度制御方法
DE102008037387A1 (de) * 2008-09-24 2010-03-25 Aixtron Ag Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske
JP2010098010A (ja) * 2008-10-14 2010-04-30 Ulvac Japan Ltd エッチング装置及びエッチング方法

Also Published As

Publication number Publication date
JP2012043916A (ja) 2012-03-01
KR20120022619A (ko) 2012-03-12
CN102376527A (zh) 2012-03-14
DE102011079806B4 (de) 2022-01-13
CN104362113A (zh) 2015-02-18
KR101294114B1 (ko) 2013-08-08
DE102011079806A1 (de) 2012-02-23

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