JP5529912B2 - シャロートレンチアイソレーション膜のためのアミノシラン - Google Patents
シャロートレンチアイソレーション膜のためのアミノシラン Download PDFInfo
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- JP5529912B2 JP5529912B2 JP2012058771A JP2012058771A JP5529912B2 JP 5529912 B2 JP5529912 B2 JP 5529912B2 JP 2012058771 A JP2012058771 A JP 2012058771A JP 2012058771 A JP2012058771 A JP 2012058771A JP 5529912 B2 JP5529912 B2 JP 5529912B2
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- film
- diisopropylaminosilane
- mixtures
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 title claims description 27
- 238000002955 isolation Methods 0.000 title claims description 3
- 239000000203 mixture Substances 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- -1 glycol ethers Chemical class 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 239000003054 catalyst Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 8
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 150000001412 amines Chemical class 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012669 liquid formulation Substances 0.000 claims description 5
- YZVRVDPMGYFCGL-UHFFFAOYSA-N triacetyloxysilyl acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O YZVRVDPMGYFCGL-UHFFFAOYSA-N 0.000 claims description 5
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 claims description 5
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 claims description 5
- AKYUXYJGXHZKLL-UHFFFAOYSA-N triethoxy(triethoxysilyl)silane Chemical compound CCO[Si](OCC)(OCC)[Si](OCC)(OCC)OCC AKYUXYJGXHZKLL-UHFFFAOYSA-N 0.000 claims description 5
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 5
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 4
- KXJLGCBCRCSXQF-UHFFFAOYSA-N [diacetyloxy(ethyl)silyl] acetate Chemical compound CC(=O)O[Si](CC)(OC(C)=O)OC(C)=O KXJLGCBCRCSXQF-UHFFFAOYSA-N 0.000 claims description 4
- VLFKGWCMFMCFRM-UHFFFAOYSA-N [diacetyloxy(phenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C1=CC=CC=C1 VLFKGWCMFMCFRM-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- 150000002576 ketones Chemical class 0.000 claims description 4
- ADCFFIGZZVYRNB-UHFFFAOYSA-N silyl propanoate Chemical compound CCC(=O)O[SiH3] ADCFFIGZZVYRNB-UHFFFAOYSA-N 0.000 claims description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 4
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 claims description 4
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 4
- LMQGXNPPTQOGDG-UHFFFAOYSA-N trimethoxy(trimethoxysilyl)silane Chemical compound CO[Si](OC)(OC)[Si](OC)(OC)OC LMQGXNPPTQOGDG-UHFFFAOYSA-N 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 3
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims 3
- 239000011976 maleic acid Substances 0.000 claims 3
- 229910017604 nitric acid Inorganic materials 0.000 claims 3
- 235000006408 oxalic acid Nutrition 0.000 claims 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 2
- ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 2,3-dimethylbutane Chemical group CC(C)C(C)C ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 0.000 claims 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- 238000009472 formulation Methods 0.000 claims 1
- 239000006187 pill Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 77
- 235000012431 wafers Nutrition 0.000 description 32
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 238000007373 indentation Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000004809 Teflon Substances 0.000 description 6
- 229920006362 Teflon® Polymers 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000003848 UV Light-Curing Methods 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LISDBLOKKWTHNH-UHFFFAOYSA-N 1,3,5-Trisilacyclohexan Natural products C1[SiH2]C[SiH2]C[SiH2]1 LISDBLOKKWTHNH-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Chemical group 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000012707 chemical precursor Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- 239000001257 hydrogen Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 2
- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 description 1
- DHKLXOYLHLFFPJ-UHFFFAOYSA-N 2-[tris(dimethylamino)silyl]ethyl acetate Chemical compound CN(C)[Si](N(C)C)(N(C)C)CCOC(C)=O DHKLXOYLHLFFPJ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- TVJPBVNWVPUZBM-UHFFFAOYSA-N [diacetyloxy(methyl)silyl] acetate Chemical compound CC(=O)O[Si](C)(OC(C)=O)OC(C)=O TVJPBVNWVPUZBM-UHFFFAOYSA-N 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- BTHCBXJLLCHNMS-UHFFFAOYSA-N acetyloxysilicon Chemical compound CC(=O)O[Si] BTHCBXJLLCHNMS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001207 fluorophenyl group Chemical group 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- UGJHADISJBNSFP-UHFFFAOYSA-N n-bis(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH](NC(C)(C)C)NC(C)(C)C UGJHADISJBNSFP-UHFFFAOYSA-N 0.000 description 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920003257 polycarbosilane Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- UQMGAWUIVYDWBP-UHFFFAOYSA-N silyl acetate Chemical class CC(=O)O[SiH3] UQMGAWUIVYDWBP-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- UVVUGWBBCDFNSD-UHFFFAOYSA-N tetraisocyanatosilane Chemical compound O=C=N[Si](N=C=O)(N=C=O)N=C=O UVVUGWBBCDFNSD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- GYTROFMCUJZKNA-UHFFFAOYSA-N triethyl triethoxysilyl silicate Chemical compound CCO[Si](OCC)(OCC)O[Si](OCC)(OCC)OCC GYTROFMCUJZKNA-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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Description
高アスペクト比の特徴を有する半導体基材を用意する工程、
該半導体基材をアミノシランを含む液体配合物と接触させる工程、
該半導体基材上に該液体配合物を塗布することにより膜を形成し、ギャップ充填可能な特徴を該膜でギャップ充填する工程、及び
該膜を酸化条件下において高温で加熱する工程
を含む方法である。
この方法のための組成物もまた考慮される。
1.新規の分子類を用いてSTI−アミノシラン、例えば、ジイソプロピルアミノシラン(DIPAS)、ビス(tert−ブチルアミノ)シラン(BTBAS)、アセトキシエチルトリス(ジメチルアミノ)シラン、ヘキサメチルシクロトリシラザン、テトライソシアナトシラン、テトラキス(ジメチルアミノ)シラン、トリス−(tert−ブチルアミノ)シラン、及びSiに直接結合したNを有しかつ本質的にポリマーではない他のアミノシランが調製される。一般式は、R(4-x)Si(NR’R”)xであることができ、式中、x=1〜4、Rはハロゲン、アルコキシ、アセトキシ、水素、及び一価の有機基のうち独立して同じであるか又は異なることができ、R’及びR”は水素及び一価の有機基のうち独立して同じであるか又は異なることができる。「一価の有機基」という用語は、本明細書で用いられる場合には、一重C結合を介してSi、N又はOなどの所定の元素に結合した有機基、すなわち、Si−C、N−C又はO−Cを含むものである。一価の有機基としては、アルキル基、アリール基、不飽和アルキル基、及び/又はアルコキシ、エステル、酸、カルボニル若しくはアルキルカルボニル官能基で置換された不飽和アルキル基が挙げられる。好ましくは、アルキル基は、1〜5個の炭素原子を有する直鎖、分枝又は環状のアルキル基であり、最も好ましくはメチル、エチル、プロピル、ブチル又はペンチル基である。アリール基としては、好ましくはフェニル、メチルフェニル、エチルフェニル及びフルオロフェニルが挙げられる。幾つかの好ましい実施態様では、アルキル基中の1つ又は複数の水素原子は、ハライド原子(すなわち、フッ素)又は酸素原子などの追加の原子で置換して、カルボニル、エステル又はエーテル官能基を与えることができる。
2.アミノシランをケイ素又はシリカの他の供給源、例えば、アルコキシシラン、クロロシラン、環状シロキサン、ジシラン、ポリシラン、環状ポリシラン、カルボシラン、環状カルボシラン、ポリカルボシラン、ケイ酸、ヒュームドシリカ、コロイド状シリカ懸濁体とともに使用して、アミノシランの加水分解によって得られる副生成物、例えば、アミンがケイ素又はシリカの他の供給源における更なる加水分解及び縮合反応を触媒して、高密度の膜を生成できるようにする。
3.高い機械強度と低いウェットエッチ速度を有する4.5〜2.3の種々の誘電率を有する高品質のSiO2様膜を生成できる。
4.生成される膜が、STIの仕様に関して、酸化条件のもと1000℃の最大温度で60分間又は高密度の膜を生成するための所望のアニーリング温度での硬化後に30%未満、より好ましくは20%未満の収縮を有する。
5.溶液の室温貯蔵安定性が求められる場合がある。溶液の安定性を判断する基準は、2週間後に液体中にゲル化又は粒子の形成がないこと、及び混合物から生成された膜の特性が変化せず、例えば、300mmのウェハ全体にわたって適切な均一性を維持し、誘電率の変化が2%よりも小さく、屈折率の変化が1.5%よりも小さく、ウェットエッチ速度における変化がなく、機械的性質における変化がないことが挙げられる。
6.膜の紫外線(UV)硬化によって材料の性能を向上させることもできる。熱+UV硬化のプロセスは、膜のサーマルバジェット(thermal budget)を制御するのに有利な場合がある。
CS=CSi(CT−Cb)/[CSi−(CT−Cb)]
ε=Csd/ε0A
表1のすべての溶液は同様に混合した。まず、1つ又は複数のシリカ源をボトルに加えた。次いで、熱の発生を最小限に抑えるために溶媒をゆっくりと加えた。ボトルを激しく振った。溶液をスピニングの前に周囲条件下で一晩熟成させた。
触媒と、シリコンを成長シリコン含有ポリマーに取り込むための試薬との両方として他のシリカ源を使用することができる。BTBAS3.6gとDIPAS2.4gをテフロン(登録商標)又はガラスのボトルで一緒に混合する。発生する熱量を最小限に抑えるために1−プロパノール1gをアミノシラン溶液にゆっくりと加える。ボトルを激しく動かして溶液を確実に均一にする。この混合物にケイ酸0.06gを加える。溶液を一晩攪拌してケイ酸の溶解を促進させる。未溶解のケイ酸は濾過によって除去する。
酸及び塩基触媒は、ゾルゲル混合物の調製の際にかなり一般的に用いられる。これらの触媒は、ケイ素含有モノマーの加水分解や縮合を助けてより高い分子量のポリマー種を形成し、そして混合物のpHを制御するのに役立つ。具体的な実施態様としては、カルボン酸及び無機酸が挙げられる。
代わりとなるソフトベーク及びアニーリング技術において、異なる縮合メカニズムを活性化することによって膜の密度を改善することができる。熱的な手段以外の他の方法としては、UV、電子ビーム、X線、230nm未満の波長における単色光源、及びプラズマ(現場又は遠隔)が挙げられる。
本例は、膜密度の増加を助けるための網状構造形成分子の使用を示すものである。1,3,5,7−テトラメチルシクロテトラシロキサン(TMCTS)を本例で使用するが、3つ以上のヒドロキシル、アルコキシ、ヒドリド、又はハロゲン官能基を介してシロキサン架橋を作り出すことができる任意のSi含有モノマーを使用してTMCTSと同じ網状構造を達成することができる。他の網状構造形成体の例としては、テトラエトキシシラン、テトラアセトキシシラン、テトラクロロシラン、フェニルトリエトキシシラン、メチルトリアセトキシシラン、トリエトキシシラン、エチルトリエトキシシラン、ヘキサエトキシジシラン、ヘキサエトキシジシロキサン、1,3,5−トリシラシクロヘキサン、及びジエトキシメチルシランが挙げられる。ここに挙げたものはすべてを包含するものではない。
熱、UV又は化学処理による硬化で、膜は以下の特性を有する。
1.純粋なSiO2が得られる。すなわち、膜は炭素又は窒素種を含まない。
2.酸化環境において1000℃で60分間硬化した後、収縮が25%以下である。
3.誘電率が2.0〜4.0である(3.0未満の誘電率は1000℃で硬化した溶液処理膜では予想もされないものである)。
4.100:1のDHF溶液によるウェット化学エッチ速度が熱酸化物と同等である(31Å/分)。
5.モジュラス及び硬度が熱酸化物と同等である。
6.膜の応力が圧縮性であり、引張性ではない。
7.高温でのガス放出が少ない。
Claims (10)
- 記憶又は論理回路を含む半導体ウェハにおいて使用される前工程のために使用されるシャロートレンチアイソレーション構造中の高アスペクト比の特徴のギャップを充填するための二酸化ケイ素含有膜のスピンオン堆積方法であって、
高アスペクト比の特徴を有する半導体ウェハを用意する工程、
該半導体ウェハ上に液体配合物を投与する工程であって、該配合物が、ビス(tert−ブチルアミノ)シラン及びジイソプロピルアミノシランからなる群より選択されるアミノシランと、グリコールエーテル、アルコール、グリコールエーテルアセテート、エステル、アミン、アミド、ケトン、及びそれらの混合物からなる群より選択される溶媒とを含む工程、
前記半導体ウェハを回転させて前記液体配合物を該半導体ウェハ上に塗布することによって該半導体ウェハ上に膜を形成し、前記高アスペクト比の特徴を該膜で充填する工程、
該膜を50〜500℃のソフトベーク温度で硬化する工程、及び
該膜を酸化条件下において500〜1500℃の温度でアニールする工程
を含む方法。 - 前記液体配合物が、ビス(tert−ブチルアミノ)シラン及びジイソプロピルアミノシランからなる第1の群より選択されるアミノシランと、ジイソプロピルアミノシラン、トリエトキシシラン、テトラアセトキシシラン、テトラエチルオルソシリケート、テトラメトキシシラン、テトラプロポキシシラン、フェニルトリエトキシシラン、フェニルトリアセトキシシラン、フェニルトリメトキシシラン、メチルトリエトキシシラン、メチルアセトキシシラン、フェニルトリメトキシシラン、エチルトリエトキシシラン、エチルトリメトキシシラン、エチルトリアセトキシシラン、ヘキサエトキシジシラン、ヘキサメトキシジシラン、及びそれらの混合物からなる群より選択される第2の群の化学物質とを含み、前記第1の群のアミノシランがジイソプロピルアミノシランである場合には、前記第2の群の化学物質がジイソプロピルアミノシランではない、請求項1に記載の方法。
- 前記溶媒が、エタノール、イソプロパノール、プロパノール、ペンタノール、及びそれらの混合物からなる群より選択される、請求項1に記載の方法。
- 膜の形成が触媒される、請求項1に記載の方法。
- 膜の形成が、塩酸、硝酸、ギ酸、酢酸、マレイン酸、シュウ酸、及びそれらの混合物からなる群より選択される触媒で触媒される、請求項4に記載の方法。
- 堆積された二酸化ケイ素含有膜がUVエネルギーを用いてさらに硬化される、請求項1に記載の方法。
- ビス(tert−ブチルアミノ)シラン及びジイソプロピルアミノシランからなる第1の群より選択されるアミノシランと、ジイソプロピルアミノシラン、トリエトキシシラン、テトラアセトキシシラン、テトラエチルオルソシリケート、テトラメトキシシラン、テトラプロポキシシラン、フェニルトリエトキシシラン、フェニルトリアセトキシシラン、フェニルトリメトキシシラン、メチルトリエトキシシラン、メチルアセトキシシラン、フェニルトリメトキシシラン、エチルトリエトキシシラン、エチルトリメトキシシラン、エチルトリアセトキシシラン、ヘキサエトキシジシラン、ヘキサメトキシジシラン、及びそれらの混合物からなる群より選択される第2の群の化学物質と、溶媒とを含み、前記第1の群のアミノシランがジイソプロピルアミノシランである場合には、前記第2の群の化学物質がジイソプロピルアミノシランではない、二酸化ケイ素堆積物のギャップ充填に有用なスピンオン組成物。
- 前記溶媒が、グリコールエーテル、アルコール、グリコールエーテルアセテート、エステル、アミン、アミド、ケトン、及びそれらの混合物からなる群より選択される、請求項7に記載の組成物。
- 塩酸、硝酸、ギ酸、酢酸、マレイン酸、シュウ酸、及びそれらの混合物からなる群より選択される触媒を含む、請求項7に記載の組成物。
- ビス(tert−ブチルアミノ)シラン及びジイソプロピルアミノシランからなる第1の群より選択されるアミノシランと、ジイソプロピルアミノシラン、トリエトキシシラン、テトラアセトキシシラン、テトラエチルオルソシリケート、テトラメトキシシラン、テトラプロポキシシラン、フェニルトリエトキシシラン、フェニルトリアセトキシシラン、フェニルトリメトキシシラン、メチルトリエトキシシラン、メチルアセトキシシラン、フェニルトリメトキシシラン、エチルトリエトキシシラン、エチルトリメトキシシラン、エチルトリアセトキシシラン、ヘキサエトキシジシラン、ヘキサメトキシジシラン、及びそれらの混合物からなる群より選択される第2の群の化学物質と、
グリコールエーテル、アルコール、グリコールエーテルアセテート、エステル、アミン、アミド、ケトン、及びそれらの混合物からなる群より選択される溶媒と、
塩酸、硝酸、ギ酸、酢酸、マレイン酸、シュウ酸、及びそれらの混合物からなる群より選択される触媒と
を含み、前記第1の群のアミノシランがジイソプロピルアミノシランである場合には、前記第2の群の化学物質がジイソプロピルアミノシランではない、二酸化ケイ素堆積物のギャップ充填に有用なスピンオン組成物。
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JP2010021551A (ja) | 2010-01-28 |
KR20100007814A (ko) | 2010-01-22 |
TW201003785A (en) | 2010-01-16 |
EP2144279A3 (en) | 2012-07-18 |
CN101624698A (zh) | 2010-01-13 |
EP2144279A2 (en) | 2010-01-13 |
KR101183412B1 (ko) | 2012-09-17 |
CN101624698B (zh) | 2013-09-18 |
TWI508172B (zh) | 2015-11-11 |
JP5043894B2 (ja) | 2012-10-10 |
US20100009546A1 (en) | 2010-01-14 |
JP2012124533A (ja) | 2012-06-28 |
US7999355B2 (en) | 2011-08-16 |
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