JP5528106B2 - 乾式非プラズマ処理システム及び当該システムの使用方法 - Google Patents

乾式非プラズマ処理システム及び当該システムの使用方法 Download PDF

Info

Publication number
JP5528106B2
JP5528106B2 JP2009516607A JP2009516607A JP5528106B2 JP 5528106 B2 JP5528106 B2 JP 5528106B2 JP 2009516607 A JP2009516607 A JP 2009516607A JP 2009516607 A JP2009516607 A JP 2009516607A JP 5528106 B2 JP5528106 B2 JP 5528106B2
Authority
JP
Japan
Prior art keywords
substrate
processing
temperature
gas
processing system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009516607A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009542000A (ja
JP2009542000A5 (https=
Inventor
ケント，マーティン
ジェイ ストラング，エリック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2009542000A publication Critical patent/JP2009542000A/ja
Publication of JP2009542000A5 publication Critical patent/JP2009542000A5/ja
Application granted granted Critical
Publication of JP5528106B2 publication Critical patent/JP5528106B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
    • B05B12/12—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to conditions of ambient medium or target, e.g. humidity, temperature position or movement of the target relative to the spray apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
    • B05B12/04—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for sequential operation or multiple outlets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
    • B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2009516607A 2006-06-22 2007-04-26 乾式非プラズマ処理システム及び当該システムの使用方法 Active JP5528106B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/425,883 US7718032B2 (en) 2006-06-22 2006-06-22 Dry non-plasma treatment system and method of using
US11/425,883 2006-06-22
PCT/US2007/067479 WO2007149627A2 (en) 2006-06-22 2007-04-26 A dry non-plasma treatment system and method of using

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013048239A Division JP2013141013A (ja) 2006-06-22 2013-03-11 乾式非プラズマ処理システム及び当該システムの使用方法

Publications (3)

Publication Number Publication Date
JP2009542000A JP2009542000A (ja) 2009-11-26
JP2009542000A5 JP2009542000A5 (https=) 2014-05-08
JP5528106B2 true JP5528106B2 (ja) 2014-06-25

Family

ID=38834188

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009516607A Active JP5528106B2 (ja) 2006-06-22 2007-04-26 乾式非プラズマ処理システム及び当該システムの使用方法
JP2013048239A Pending JP2013141013A (ja) 2006-06-22 2013-03-11 乾式非プラズマ処理システム及び当該システムの使用方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013048239A Pending JP2013141013A (ja) 2006-06-22 2013-03-11 乾式非プラズマ処理システム及び当該システムの使用方法

Country Status (5)

Country Link
US (4) US7718032B2 (https=)
JP (2) JP5528106B2 (https=)
KR (1) KR101375966B1 (https=)
CN (2) CN102176408B (https=)
WO (1) WO2007149627A2 (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7795148B2 (en) * 2006-03-28 2010-09-14 Tokyo Electron Limited Method for removing damaged dielectric material
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP4939864B2 (ja) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP4776575B2 (ja) * 2007-03-28 2011-09-21 株式会社東芝 表面処理方法、エッチング処理方法および電子デバイスの製造方法
US20090035916A1 (en) * 2007-08-03 2009-02-05 Kim Jung Nam Method for manufacturing semiconductor device having fin gate
JP5356522B2 (ja) * 2008-07-31 2013-12-04 東京エレクトロン株式会社 化学処理及び熱処理用高スループット処理システム及びその動作方法
US8287688B2 (en) * 2008-07-31 2012-10-16 Tokyo Electron Limited Substrate support for high throughput chemical treatment system
US8323410B2 (en) * 2008-07-31 2012-12-04 Tokyo Electron Limited High throughput chemical treatment system and method of operating
US8115140B2 (en) * 2008-07-31 2012-02-14 Tokyo Electron Limited Heater assembly for high throughput chemical treatment system
US8303715B2 (en) * 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput thermal treatment system and method of operating
US8303716B2 (en) * 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
JP2012089805A (ja) * 2010-10-22 2012-05-10 Toshiba Corp エッチング装置およびエッチング方法
KR101946296B1 (ko) * 2011-11-28 2019-04-26 삼성전자 주식회사 반도체 장치의 제조 방법
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP6110848B2 (ja) * 2012-05-23 2017-04-05 東京エレクトロン株式会社 ガス処理方法
JP6435667B2 (ja) * 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
US10373850B2 (en) * 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
CN107851559B (zh) 2015-06-26 2022-04-26 东京毅力科创株式会社 气相蚀刻系统和方法
WO2016210299A1 (en) 2015-06-26 2016-12-29 Tokyo Electron Limited GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKS
CN106919010A (zh) * 2015-12-25 2017-07-04 中微半导体设备(上海)有限公司 一种用于半导体晶片剥去光刻胶装置
BR112018016126A2 (pt) * 2016-02-08 2019-01-02 Mtpv Power Corp sistema termofotovoltaico de lacuna micrônica radiativa com emissor transparente
US10460977B2 (en) * 2016-09-29 2019-10-29 Lam Research Corporation Lift pin holder with spring retention for substrate processing systems
JP6796559B2 (ja) * 2017-07-06 2020-12-09 東京エレクトロン株式会社 エッチング方法および残渣除去方法
EP3450809A1 (de) * 2017-08-31 2019-03-06 VAT Holding AG Verstellvorrichtung mit spannzangenkupplung für den vakuumbereich
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
CN110942987A (zh) * 2018-09-21 2020-03-31 长鑫存储技术有限公司 一种半导体结构的形成方法
CN114207787A (zh) 2019-08-23 2022-03-18 东京毅力科创株式会社 对交替的金属和电介质具有可调选择性的含钛材料层非等离子体刻蚀
DE102019218727A1 (de) * 2019-12-03 2021-06-10 Robert Bosch Gmbh Vorrichtung und verfahren zum bearbeiten mindestens eines halbleiter-substrates
KR20220028445A (ko) 2020-08-28 2022-03-08 삼성전자주식회사 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법
CN111933566A (zh) * 2020-09-24 2020-11-13 晶芯成(北京)科技有限公司 浅沟槽隔离结构的形成方法
CN112992759B (zh) * 2020-10-16 2022-04-19 重庆康佳光电技术研究院有限公司 一种器件转移设备及其制备方法、器件转移方法
CN114904692B (zh) * 2022-05-27 2023-07-28 苏州光宝科技股份有限公司 一种带有自辨别自检测效果的高精度晶圆喷涂设备
WO2025022503A1 (ja) * 2023-07-21 2025-01-30 株式会社日立ハイテク 半導体製造装置およびウエハ温度制御方法
JP7607367B1 (ja) 2023-11-10 2024-12-27 ヴイエム インコーポレイテッド シャローエッチングプロセスチャンバ

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3175576D1 (en) 1980-12-11 1986-12-11 Toshiba Kk Dry etching device and method
KR900002143B1 (ko) 1985-03-29 1990-04-02 미쯔비시 덴끼 가부시기가이샤 덕트식 멀티조온 공조시스템
JPH0834205B2 (ja) 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
DE3856483T2 (de) * 1987-03-18 2002-04-18 Kabushiki Kaisha Toshiba, Kawasaki Verfahren zur Herstellung von Dünnschichten
EP0376252B1 (en) * 1988-12-27 1997-10-22 Kabushiki Kaisha Toshiba Method of removing an oxide film on a substrate
TW204411B (https=) 1991-06-05 1993-04-21 Tokyo Electron Co Ltd
US5273588A (en) 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
US5282925A (en) 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JPH0799162A (ja) * 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
US5622639A (en) 1993-07-29 1997-04-22 Tokyo Electron Kabushiki Kaisha Heat treating apparatus
JPH0786174A (ja) 1993-09-16 1995-03-31 Tokyo Electron Ltd 成膜装置
KR960002534A (ko) 1994-06-07 1996-01-26 이노우에 아키라 감압·상압 처리장치
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5733426A (en) 1995-05-23 1998-03-31 Advanced Micro Devices, Inc. Semiconductor wafer clamp device and method
US5822925A (en) * 1995-11-07 1998-10-20 Maytag Corporation Hook-mounted hinge mechanism for oven doors
US5758324A (en) * 1995-12-15 1998-05-26 Hartman; Richard L. Resume storage and retrieval system
US5802856A (en) 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
US5838055A (en) 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US5876879A (en) 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US6074951A (en) 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6527865B1 (en) 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
JP4124543B2 (ja) * 1998-11-11 2008-07-23 東京エレクトロン株式会社 表面処理方法及びその装置
US6383300B1 (en) 1998-11-27 2002-05-07 Tokyo Electron Ltd. Heat treatment apparatus and cleaning method of the same
US20020011216A1 (en) 1999-06-04 2002-01-31 Tue Nguyen Integral susceptor-wall reactor system and method
KR100338768B1 (ko) * 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
US6284006B1 (en) 1999-11-15 2001-09-04 Fsi International, Inc. Processing apparatus for microelectronic devices in which polymeric bellows are used to help accomplish substrate transport inside of the apparatus
US20010016226A1 (en) 1999-12-15 2001-08-23 International Business Machines Corporation Method for preparing the surface of a dielectric
AU3084101A (en) 2000-01-05 2001-07-16 Tokyo Electron Limited A method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
US6245619B1 (en) 2000-01-21 2001-06-12 International Business Machines Corporation Disposable-spacer damascene-gate process for SUB 0.05 μm MOS devices
EP1124252A2 (en) 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
US6271094B1 (en) 2000-02-14 2001-08-07 International Business Machines Corporation Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance
AU2001247226A1 (en) 2000-03-20 2001-10-03 Tokyo Electron Limited High speed stripping for damaged photoresist
US6335261B1 (en) 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
US20020015855A1 (en) 2000-06-16 2002-02-07 Talex Sajoto System and method for depositing high dielectric constant materials and compatible conductive materials
JP4672113B2 (ja) 2000-07-07 2011-04-20 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US6936134B2 (en) 2000-11-14 2005-08-30 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6926843B2 (en) 2000-11-30 2005-08-09 International Business Machines Corporation Etching of hard masks
CN1322556C (zh) * 2001-02-15 2007-06-20 东京毅力科创株式会社 被处理件的处理方法及处理装置
US20020195201A1 (en) 2001-06-25 2002-12-26 Emanuel Beer Apparatus and method for thermally isolating a heat chamber
US6818493B2 (en) * 2001-07-26 2004-11-16 Motorola, Inc. Selective metal oxide removal performed in a reaction chamber in the absence of RF activation
US6540556B1 (en) * 2001-12-17 2003-04-01 Speed Tech Corp. Electric connector
JP2003282530A (ja) * 2002-03-26 2003-10-03 Hitachi Kokusai Electric Inc 基板処理装置、及び半導体装置の製造方法
US20050142885A1 (en) * 2002-08-30 2005-06-30 Tokyo Electron Limited Method of etching and etching apparatus
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
JP2004221155A (ja) * 2003-01-10 2004-08-05 Tokyo Electron Ltd 酸化膜の除去方法、加熱方法、及び処理装置
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
US7877161B2 (en) 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US7079760B2 (en) 2003-03-17 2006-07-18 Tokyo Electron Limited Processing system and method for thermally treating a substrate
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
KR100498494B1 (ko) * 2003-04-08 2005-07-01 삼성전자주식회사 회전 이동 방식의 원격 플라즈마 강화 세정 장치
WO2004095559A1 (ja) 2003-04-22 2004-11-04 Tokyo Electron Limited シリコン酸化膜の除去方法及び処理装置
US20050218113A1 (en) 2004-03-30 2005-10-06 Tokyo Electron Limited Method and system for adjusting a chemical oxide removal process using partial pressure
US20050227494A1 (en) 2004-03-30 2005-10-13 Tokyo Electron Limited Processing system and method for treating a substrate
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7049612B2 (en) * 2004-03-02 2006-05-23 Applied Materials Electron beam treatment apparatus
US20050211264A1 (en) 2004-03-25 2005-09-29 Tokyo Electron Limited Of Tbs Broadcast Center Method and processing system for plasma-enhanced cleaning of system components
US20050218114A1 (en) 2004-03-30 2005-10-06 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US20050269291A1 (en) 2004-06-04 2005-12-08 Tokyo Electron Limited Method of operating a processing system for treating a substrate
US7344983B2 (en) * 2005-03-18 2008-03-18 International Business Machines Corporation Clustered surface preparation for silicide and metal contacts
JP2005303329A (ja) * 2005-06-23 2005-10-27 Hitachi Ltd プラズマエッチング装置
US20070238301A1 (en) 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
JP2007266455A (ja) * 2006-03-29 2007-10-11 Tokyo Electron Ltd 基板処理装置、基板処理方法及び記憶媒体
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using

Also Published As

Publication number Publication date
US20140360979A1 (en) 2014-12-11
JP2009542000A (ja) 2009-11-26
US20150314313A1 (en) 2015-11-05
US20100237046A1 (en) 2010-09-23
US11745202B2 (en) 2023-09-05
US7718032B2 (en) 2010-05-18
WO2007149627A2 (en) 2007-12-27
US9115429B2 (en) 2015-08-25
US20070298972A1 (en) 2007-12-27
WO2007149627A3 (en) 2008-09-18
JP2013141013A (ja) 2013-07-18
KR101375966B1 (ko) 2014-03-18
CN102176408A (zh) 2011-09-07
CN101473419A (zh) 2009-07-01
US8828185B2 (en) 2014-09-09
CN101473419B (zh) 2011-05-25
CN102176408B (zh) 2013-05-08
KR20090023503A (ko) 2009-03-04

Similar Documents

Publication Publication Date Title
JP5528106B2 (ja) 乾式非プラズマ処理システム及び当該システムの使用方法
JP5014985B2 (ja) 基材を処理するためのプロセス加工システムおよび方法
US20070238301A1 (en) Batch processing system and method for performing chemical oxide removal
JP4842263B2 (ja) Ｔｅｒａ層を化学処理するための処理システムおよび方法
JP5305316B2 (ja) エッチング後の処理システムのためのガス分配システム
KR101313426B1 (ko) 기판 상의 잔류물을 제거하기 위한 에칭후 처리 시스템
KR102893898B1 (ko) 막을 에칭하는 방법 및 플라즈마 처리 장치
JP4629678B2 (ja) 基板上に材料を堆積させる方法。
JP2008502134A (ja) 基材を処理するためのプロセス加工システムを動作させる方法
JP2007266609A (ja) 基板から残渣を除去する方法
US12334343B2 (en) Substrate processing method and substrate processing system
US20090212014A1 (en) Method and system for performing multiple treatments in a dual-chamber batch processing system
KR20250078542A (ko) 규소-함유 재료의 탄소 보충
TW202221789A (zh) 處理基板之方法與設備
JPS63271933A (ja) アツシング方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100121

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120911

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121112

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121211

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130311

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20130318

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20130405

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140317

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20140317

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140415

R150 Certificate of patent or registration of utility model

Ref document number: 5528106

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250