JP5515307B2 - 薄膜固体リチウムイオン二次電池 - Google Patents
薄膜固体リチウムイオン二次電池 Download PDFInfo
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- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49108—Electric battery cell making
- Y10T29/49115—Electric battery cell making including coating or impregnating
Description
図1は、本発明の実施の形態(その1)における、固体リチウムイオン電池の概略構造を説明する図であり、図1(A)は平面図、図1(B)はX−X断面図、図1(C)はY−Y断面図である。
図2は、本発明の実施の形態(その2)における、固体リチウムイオン電池の概略構造を説明する図であり、図2(A)は平面図、図2(B)はX−X断面図である。
図3は、本発明の実施の形態における、固体リチウムイオン電池の製造工程の概略を説明する図である。
[実施例及び比較例における構成、並びに、これらにおける初期ショートの発生頻度]
図4は、本発明の実施例及び比較例における、固体リチウムイオン電池の各層の構成を説明する図であり、以下で説明する固体リチウムイオン電池の各層の材質及びその厚さを、(A)実施例、(B)比較例に関してそれぞれ示している。
図1に示す構成を有する固体リチウムイオン電池を作成した。量産性、コストを勘案して、基板10として厚さ1.1mmのポリカーボネート(PC)基板を用いた。この他にもガラス材、アクリル等からなる基板を使用することができ、導電性がなく表面の平滑性が作成する電池の膜厚に応じて十分平坦であればよい。基板10の上に全面に無機絶縁膜20としてSi3N4を厚さ200nmで成膜した。
ターゲット組成:Ti
スパッタリングガス:Ar70sccm、0.45Pa
スパッタリングパワー:1000W(DC)
(2)LiMn2O4膜の形成
スパッタリングガス:(Ar 80%+O2 20%混合ガス)20sccm、0.20Pa
スパッタリングパワー:300W(RF)
(3)Li3PO4Nx膜の形成
ターゲット組成:Li3PO4
スパッタリングガス:Ar 20sccm+N2 20sccm、0.26Pa
スパッタリングパワー:300W(RF)
(4)ITO膜の形成
ここでは、アネルバ社製C−3103を用い、ターゲットサイズはφ6インチである。スパッタリング条件を次に示す。
ターゲット組成:ITO(In2O3 90wt.%+SnO2 10wt.%)
スパッタリングガス:Ar 120sccm+(Ar 80%+O2 20%混合ガス)30sccm、0.10Pa
スパッタリングパワー:1000W(DC)
なお、スパッタリング時間に関しては、所望の膜厚が得られるよう調整した。
比較のために、無機絶縁膜20がない以外は全て実施例1と同一の構成を有する電池を同時スパッタリングにより10個作成した。電池の膜構成は、ポリカーボネート基板/Ti(100nm)/LiMn2O4(125nm)/Li3PO4Nx(145nm)/ITO(20nm)/Ti(200nm)/紫外線硬化樹脂(20μm)である(図4(B)を参照。)。この10個の全数について初期の導通状況を調べたところ、10個中、5個が初期のショートを起こしていた。
次に、無機絶縁膜としてSCZ(SiO2、Cr2O3、ZrO2の混合物である。)を50nm形成して実施例1と同様の電池を作成した。電池の膜構成は、ポリカーボネート基板/SCZ(50nm)/Ti(100nm)/LiMn2O4(125nm)/Li3PO4Nx(145nm)/ITO(20nm)/Ti(200nm)/紫外線硬化樹脂(20μm)である(図4(A)を参照。)。
ターゲットリング組成:SCZ(SiO2 35at.%+Cr2O3 30at.%+ZrO2 35at.%)
スパッタリングガス:Ar100sccm、0.13Pa
スパッタリングパワー:1000W(RF)
実施例1と同様にして、同一の試料50個を作成し、初期の導通状態を調べたところ不良であったのは3個であった(図5、図6を参照。)。また、充放電特性は実施例1とほぼ同等であり、無機絶縁膜を設けこの上に電池を搭載する構成は非常に有効である。
無機絶縁膜20として、Si3N4 を500nm形成して実施例1と同様の電池を作成した。電池の膜構成は、ポリカーボネート基板/Si3N4(500nm)/Ti(100nm)/LiMn2O4(125nm)/Li3PO4Nx(145nm)/ITO(20nm)/Ti(200nm)/紫外線硬化樹脂(20μm)である(図4(A)を参照。)。この構成の電池では、初期の充放電、繰返し充放電特性は問題なかった。
基板10としてポリカーボネート基板を用い、無機絶縁膜20としてSiO2、SCZを用いた場合には、無機絶縁膜20の膜厚が500nmを超えるとポリカーボネート基板を曲率半径30cm程度に曲げると、電池を構成する膜のクラックが観測された。
図6に示すように、電池の初期のショートの発生頻度は、無機絶縁膜20の膜厚の増加と共に低下する。電池の初期のショートによる不良率(発生頻度)を10%以下にするためには、無機絶縁膜20の膜厚が5nm以上、500nm以下とするのが好ましい。
40…正極活物質膜、50…固体電解質膜、60…負極活物質膜、
70…負極側集電体膜、80…全体保護膜
Claims (7)
- 有機樹脂から成る電気絶縁性基板と、前記電気絶縁性基板の面に形成された絶縁膜と、集電体膜と、活物質膜と、固体電解質膜とを含む薄膜固体リチウムイオン二次電池であって、
前記活物質膜、及び、前記固体電解質膜はアモルファス膜によって形成されており、
前記絶縁膜は、前記集電体膜、前記活物質膜、及び、前記固体電解質膜の前記電気絶縁性基板への正射影を含む領域に形成されていると共に、前記集電体膜は、前記絶縁膜の面に形成されており、
前記絶縁膜は、SiO 2 、Cr 2 O 3 、ZrO 2 の混合物から成る50nm以上200nm以下の厚さの膜によって構成されている、
薄膜固体リチウムイオン二次電池。 - 前記集電体膜は正極側集電体膜と負極側集電体膜を含み、
前記活物質膜は正極活物質膜と負極活物質膜を含み、
前記正極側集電体膜又は/及び前記負極側集電体膜は前記絶縁膜の面に形成されている、
請求項1に記載の薄膜固体リチウムイオン二次電池。 - 前記電気絶縁性基板は可撓性を有する、
請求項1に記載の薄膜固体リチウムイオン二次電池。 - 前記電気絶縁性基板はポリカーボネートから成る、
請求項3に記載の薄膜固体リチウムイオン二次電池。 - 前記正極活物質膜は、Mn、Co、Fe、P、Ni、Siの少なくとも1つ、及び、Liを含む酸化物から成る、
請求項2に記載の薄膜固体リチウムイオン二次電池。 - 前記負極活物質膜は、Sn、Si、Al、Ge、Sb、Ag、Ga、In、Fe、Co、Ni、Ti、Mn、Ca、Ba、La、Zr、Ce、Cu、Mg、Sr、Cr、Mo、Nb、V、Znの少なくとも1つを含む酸化物から成る、
請求項2に記載の薄膜固体リチウムイオン二次電池。 - 前記集電体膜は、Ti、Au、Pt、Cu、若しくは、これらの合金を含む金属材料から成る、
請求項1に記載の薄膜固体リチウムイオン二次電池。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2009022595A JP5515307B2 (ja) | 2009-02-03 | 2009-02-03 | 薄膜固体リチウムイオン二次電池 |
PCT/JP2010/051126 WO2010090124A1 (ja) | 2009-02-03 | 2010-01-28 | 薄膜固体リチウムイオン二次電池及びその製造方法 |
CN2010800057601A CN102301519A (zh) | 2009-02-03 | 2010-01-28 | 薄膜固态锂离子二次电池及其制造方法 |
US13/146,594 US20110287296A1 (en) | 2009-02-03 | 2010-01-28 | Thin film solid state lithium ion secondary battery and method of manufacturing the same |
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JP2009022595A JP5515307B2 (ja) | 2009-02-03 | 2009-02-03 | 薄膜固体リチウムイオン二次電池 |
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JP2010182447A JP2010182447A (ja) | 2010-08-19 |
JP5515307B2 true JP5515307B2 (ja) | 2014-06-11 |
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US (1) | US20110287296A1 (ja) |
JP (1) | JP5515307B2 (ja) |
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WO (1) | WO2010090124A1 (ja) |
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JP5752412B2 (ja) * | 2010-12-27 | 2015-07-22 | 株式会社アルバック | 薄膜リチウム二次電池の製造方法及び薄膜リチウム二次電池 |
JP5821270B2 (ja) * | 2011-05-16 | 2015-11-24 | ソニー株式会社 | 固体電解質電池および正極活物質 |
CN102306778B (zh) * | 2011-09-02 | 2013-10-16 | 惠州市惠德瑞锂电科技有限公司 | 一种非水性电化学电池及其制备方法 |
US9017861B2 (en) | 2012-03-15 | 2015-04-28 | Kabushiki Kaisha Toshiba | Nonaqueous electrolyte secondary battery |
US9070950B2 (en) | 2012-03-26 | 2015-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Power storage element, manufacturing method thereof, and power storage device |
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CN103258992B (zh) * | 2013-04-28 | 2016-02-24 | 浙江大学 | 一种首次库仑效率高的锂离子电池负极材料的制备方法 |
JP2015060720A (ja) * | 2013-09-19 | 2015-03-30 | 株式会社村田製作所 | 固体電池 |
EP3069396A2 (en) * | 2013-11-13 | 2016-09-21 | R. R. Donnelley & Sons Company | Battery |
CN104037455B (zh) * | 2014-05-23 | 2016-11-16 | 鸿源控股有限公司 | 动力锂离子聚合物电池的制作方法 |
CN104134816A (zh) * | 2014-08-05 | 2014-11-05 | 厦门大学 | 一种采用倒金字塔阵列结构的三维全固态微型薄膜锂电池 |
JP6323873B2 (ja) * | 2014-08-13 | 2018-05-16 | 国立研究開発法人産業技術総合研究所 | 軟x線を用いた二次電池オペランド測定用電極 |
US9455437B2 (en) | 2014-10-08 | 2016-09-27 | Intermolecular, Inc. | Solid-state batteries utilizing template layers for electrode formation and methods for forming the same |
TW201711261A (zh) * | 2015-04-28 | 2017-03-16 | 應用材料股份有限公司 | 用於製造具有台面結構的電池之方法與設備及包含台面結構的電池 |
KR101829761B1 (ko) * | 2015-12-17 | 2018-02-19 | 재단법인 포항산업과학연구원 | 박막형 리튬 이차 전지 |
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CN107799836A (zh) * | 2016-09-07 | 2018-03-13 | 中兴通讯股份有限公司 | 固态电池制作方法、固态电池及终端 |
JP7192866B2 (ja) * | 2018-08-10 | 2022-12-20 | 株式会社村田製作所 | 固体電池 |
CN109148894A (zh) * | 2018-09-05 | 2019-01-04 | 天津瑞晟晖能科技有限公司 | 锂离子电池正极、全固态锂离子电池及其制备方法与用电器件 |
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JP3116857B2 (ja) * | 1997-04-04 | 2000-12-11 | 日本電気株式会社 | 半導体基板搭載型二次電池 |
WO2002065573A1 (fr) * | 2001-02-15 | 2002-08-22 | Matsushita Electric Industrial Co., Ltd. | Cellule d'electrolyse solide et procede de production de cette derniere |
JP4076749B2 (ja) * | 2001-10-15 | 2008-04-16 | 富士フイルム株式会社 | 導電性有機化合物及び電子素子 |
JP2003132941A (ja) * | 2001-10-29 | 2003-05-09 | Matsushita Electric Ind Co Ltd | コンデンサ一体型の固体電解質二次電池 |
US6713987B2 (en) * | 2002-02-28 | 2004-03-30 | Front Edge Technology, Inc. | Rechargeable battery having permeable anode current collector |
CN100358144C (zh) * | 2003-04-04 | 2007-12-26 | 松下电器产业株式会社 | 搭载电池的集成电路装置 |
US20040258984A1 (en) * | 2003-04-14 | 2004-12-23 | Massachusetts Institute Of Technology | Integrated thin film batteries on silicon integrated circuits |
CA2432397A1 (fr) * | 2003-06-25 | 2004-12-25 | Hydro-Quebec | Procede de preparation d'electrode a partir d'un silicium poreux, electrode ainsi obtenue et systeme electrochimique contenant au moins une telle electrode |
JP2005027017A (ja) * | 2003-07-02 | 2005-01-27 | Ricoh Co Ltd | 画像処理装置 |
JP5002852B2 (ja) * | 2005-02-02 | 2012-08-15 | ジオマテック株式会社 | 薄膜固体二次電池 |
JP2006351326A (ja) * | 2005-06-15 | 2006-12-28 | Matsushita Electric Ind Co Ltd | 固体電池 |
JP2007103130A (ja) * | 2005-10-03 | 2007-04-19 | Geomatec Co Ltd | 薄膜固体二次電池および薄膜固体二次電池の製造方法 |
WO2008011061A1 (en) * | 2006-07-18 | 2008-01-24 | Cymbet Corporation | Method and apparatus for solid-state microbattery photolithographic manufacture, singulation and passivation |
JP5217195B2 (ja) * | 2007-03-14 | 2013-06-19 | ジオマテック株式会社 | 薄膜固体リチウムイオン二次電池及びこれを備えた複合型機器 |
US20090202899A1 (en) * | 2008-02-11 | 2009-08-13 | Pyszczek Michael F | Electrical apparatus with integral thin film solid state battery and methods of manufacture |
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