JP5512554B2 - マイクロエレクトロニクス基板洗浄用組成物 - Google Patents

マイクロエレクトロニクス基板洗浄用組成物 Download PDF

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Publication number
JP5512554B2
JP5512554B2 JP2010548782A JP2010548782A JP5512554B2 JP 5512554 B2 JP5512554 B2 JP 5512554B2 JP 2010548782 A JP2010548782 A JP 2010548782A JP 2010548782 A JP2010548782 A JP 2010548782A JP 5512554 B2 JP5512554 B2 JP 5512554B2
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Japan
Prior art keywords
composition
cleaning
microelectronic substrate
weight
cleaning composition
Prior art date
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JP2010548782A
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English (en)
Japanese (ja)
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JP2011516620A5 (https=
JP2011516620A (ja
Inventor
ウィリアム アール． ジェミル，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avantor Performance Materials LLC
Original Assignee
JT Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JT Baker Inc filed Critical JT Baker Inc
Publication of JP2011516620A publication Critical patent/JP2011516620A/ja
Publication of JP2011516620A5 publication Critical patent/JP2011516620A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Drying Of Semiconductors (AREA)
JP2010548782A 2008-02-29 2009-02-05 マイクロエレクトロニクス基板洗浄用組成物 Active JP5512554B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3244908P 2008-02-29 2008-02-29
US61/032,449 2008-02-29
PCT/US2009/033148 WO2009108474A1 (en) 2008-02-29 2009-02-05 Microelectronic substrate cleaning compositions

Publications (3)

Publication Number Publication Date
JP2011516620A JP2011516620A (ja) 2011-05-26
JP2011516620A5 JP2011516620A5 (https=) 2012-03-22
JP5512554B2 true JP5512554B2 (ja) 2014-06-04

Family

ID=40419175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010548782A Active JP5512554B2 (ja) 2008-02-29 2009-02-05 マイクロエレクトロニクス基板洗浄用組成物

Country Status (11)

Country Link
US (1) US8168577B2 (https=)
EP (1) EP2247672B1 (https=)
JP (1) JP5512554B2 (https=)
KR (1) KR101570256B1 (https=)
CN (1) CN101959977B (https=)
BR (1) BRPI0908905A2 (https=)
CA (1) CA2716641A1 (https=)
IL (1) IL207605A (https=)
TW (1) TW200942608A (https=)
WO (1) WO2009108474A1 (https=)
ZA (1) ZA201005419B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101838483B (zh) * 2010-05-11 2012-07-04 华北电网有限公司北京超高压公司 一种溶解型防污闪涂层清除剂及其制备方法
SG11201908804VA (en) * 2017-03-31 2019-10-30 Kanto Kagaku Cleaning solution composition
CN115386954A (zh) * 2022-09-17 2022-11-25 中国科学院新疆理化技术研究所 化合物氟硼酸锂钠和氟硼酸锂钠双折射晶体及制备方法和用途

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401747A (en) 1982-09-02 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4491530A (en) 1983-05-20 1985-01-01 Allied Corporation Brown stain suppressing phenol free and chlorinated hydrocarbons free photoresist stripper
US5480585A (en) 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
US5568461A (en) * 1994-04-20 1996-10-22 Matsushita Electric Industrial Co., Ltd. Optical information recording and reproducing apparatus
JPH07311469A (ja) * 1994-05-17 1995-11-28 Hitachi Chem Co Ltd ポリイミド系樹脂膜のレジスト剥離残り除去液およびポリイミド系樹脂膜パターンの製造法
US5571447A (en) 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6043206A (en) 1996-10-19 2000-03-28 Samsung Electronics Co., Ltd. Solutions for cleaning integrated circuit substrates
KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
US6150282A (en) 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
US6432209B2 (en) 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
JPH11323394A (ja) 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
KR100288769B1 (ko) 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
US6828289B2 (en) 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6761835B2 (en) 2000-07-07 2004-07-13 Tdk Corporation Phosphor multilayer and EL panel
JP4959095B2 (ja) 2000-07-10 2012-06-20 イーケイシー テクノロジー インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
US20030022800A1 (en) 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US8906838B2 (en) * 2002-06-07 2014-12-09 Avantor Performance Materials, Inc. Microelectronic cleaning and arc remover compositions
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
US6677286B1 (en) 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
US7166419B2 (en) 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
CA2544198C (en) * 2003-10-29 2011-07-26 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
US8030263B2 (en) 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
JP2006041446A (ja) * 2004-07-30 2006-02-09 Sumitomo Chemical Co Ltd 電子部品洗浄液
BRPI0518420A2 (pt) * 2004-12-10 2008-11-25 Mallinckrodt Baker Inc composiÇÕes de limpeza de microeletrânicos nço-aquosas, nço-corrosivas, contendo inibidores de corrosço polimÉricos
CN101228481B (zh) 2005-02-25 2012-12-05 Ekc技术公司 从包括铜和低k电介体的基片上除去抗蚀剂、蚀刻残余物和氧化铜的方法
SG161211A1 (en) * 2005-04-04 2010-05-27 Mallinckrodt Baker Inc Compositions for cleaning ion implanted photoresist in front end of line applications
JP2006310603A (ja) * 2005-04-28 2006-11-09 Nissan Chem Ind Ltd ホウ素化合物を含む半導体用洗浄液組成物及び洗浄方法
CN101233601A (zh) 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
KR100655647B1 (ko) * 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
EP1946358A4 (en) * 2005-11-09 2009-03-04 Advanced Tech Materials COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS ON WHICH DIELECTRIC MATERIAL WITH LOW DIELECTRIC CONSTANT
US7582508B2 (en) * 2006-05-31 2009-09-01 Byoung-Choo Park Method for manufacturing an organic semiconductor device that utilizes ionic salt
WO2008023858A1 (en) 2006-08-25 2008-02-28 Hanwha Chemical Corporation Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
US20080125342A1 (en) 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
TWI611047B (zh) * 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer

Also Published As

Publication number Publication date
WO2009108474A1 (en) 2009-09-03
KR101570256B1 (ko) 2015-11-18
EP2247672B1 (en) 2013-06-05
CA2716641A1 (en) 2009-09-03
ZA201005419B (en) 2011-04-28
IL207605A (en) 2014-02-27
US20110046036A1 (en) 2011-02-24
US8168577B2 (en) 2012-05-01
IL207605A0 (en) 2010-12-30
TW200942608A (en) 2009-10-16
BRPI0908905A2 (pt) 2015-09-22
CN101959977B (zh) 2013-12-04
JP2011516620A (ja) 2011-05-26
EP2247672A1 (en) 2010-11-10
CN101959977A (zh) 2011-01-26
KR20100125270A (ko) 2010-11-30

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