KR101570256B1 - 마이크로전자 기재 세정용 조성물 - Google Patents

마이크로전자 기재 세정용 조성물 Download PDF

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Publication number
KR101570256B1
KR101570256B1 KR1020107019104A KR20107019104A KR101570256B1 KR 101570256 B1 KR101570256 B1 KR 101570256B1 KR 1020107019104 A KR1020107019104 A KR 1020107019104A KR 20107019104 A KR20107019104 A KR 20107019104A KR 101570256 B1 KR101570256 B1 KR 101570256B1
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KR
South Korea
Prior art keywords
composition
weight
microelectronic substrate
cleaning composition
insulating layer
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KR1020107019104A
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English (en)
Korean (ko)
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KR20100125270A (ko
Inventor
윌리엄 알. 제밀
Original Assignee
아반토르 퍼포먼스 머티리얼스, 인크.
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Application filed by 아반토르 퍼포먼스 머티리얼스, 인크. filed Critical 아반토르 퍼포먼스 머티리얼스, 인크.
Publication of KR20100125270A publication Critical patent/KR20100125270A/ko
Application granted granted Critical
Publication of KR101570256B1 publication Critical patent/KR101570256B1/ko
Assigned to 아반토 퍼포먼스 머티리얼즈, 엘엘씨 reassignment 아반토 퍼포먼스 머티리얼즈, 엘엘씨 권리의 전부이전등록 Assignors: 아반토르 퍼포먼스 머티리얼스, 인크.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Drying Of Semiconductors (AREA)
KR1020107019104A 2008-02-29 2009-02-05 마이크로전자 기재 세정용 조성물 Active KR101570256B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3244908P 2008-02-29 2008-02-29
US61/032,449 2008-02-29

Publications (2)

Publication Number Publication Date
KR20100125270A KR20100125270A (ko) 2010-11-30
KR101570256B1 true KR101570256B1 (ko) 2015-11-18

Family

ID=40419175

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019104A Active KR101570256B1 (ko) 2008-02-29 2009-02-05 마이크로전자 기재 세정용 조성물

Country Status (11)

Country Link
US (1) US8168577B2 (https=)
EP (1) EP2247672B1 (https=)
JP (1) JP5512554B2 (https=)
KR (1) KR101570256B1 (https=)
CN (1) CN101959977B (https=)
BR (1) BRPI0908905A2 (https=)
CA (1) CA2716641A1 (https=)
IL (1) IL207605A (https=)
TW (1) TW200942608A (https=)
WO (1) WO2009108474A1 (https=)
ZA (1) ZA201005419B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101838483B (zh) * 2010-05-11 2012-07-04 华北电网有限公司北京超高压公司 一种溶解型防污闪涂层清除剂及其制备方法
WO2018180256A1 (ja) * 2017-03-31 2018-10-04 関東化學株式会社 洗浄液組成物
CN115386954A (zh) * 2022-09-17 2022-11-25 中国科学院新疆理化技术研究所 化合物氟硼酸锂钠和氟硼酸锂钠双折射晶体及制备方法和用途

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US4491530A (en) * 1983-05-20 1985-01-01 Allied Corporation Brown stain suppressing phenol free and chlorinated hydrocarbons free photoresist stripper
US5480585A (en) * 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
US5568461A (en) * 1994-04-20 1996-10-22 Matsushita Electric Industrial Co., Ltd. Optical information recording and reproducing apparatus
JPH07311469A (ja) * 1994-05-17 1995-11-28 Hitachi Chem Co Ltd ポリイミド系樹脂膜のレジスト剥離残り除去液およびポリイミド系樹脂膜パターンの製造法
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6043206A (en) * 1996-10-19 2000-03-28 Samsung Electronics Co., Ltd. Solutions for cleaning integrated circuit substrates
KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
US6150282A (en) * 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
US6432209B2 (en) 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
JPH11323394A (ja) * 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
KR100288769B1 (ko) * 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6761835B2 (en) * 2000-07-07 2004-07-13 Tdk Corporation Phosphor multilayer and EL panel
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US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
EP1512050A2 (en) * 2002-06-07 2005-03-09 Mallinckrodt Baker, Inc. Cleaning compositions for microelectronic substrates
US7192860B2 (en) * 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
JP4620680B2 (ja) * 2003-10-29 2011-01-26 マリンクロッド・ベイカー・インコーポレイテッド ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング／灰化後の残渣の除去剤およびフォトレジスト剥離組成物
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
JP2006041446A (ja) * 2004-07-30 2006-02-09 Sumitomo Chemical Co Ltd 電子部品洗浄液
BRPI0518420A2 (pt) * 2004-12-10 2008-11-25 Mallinckrodt Baker Inc composiÇÕes de limpeza de microeletrânicos nço-aquosas, nço-corrosivas, contendo inibidores de corrosço polimÉricos
KR101238471B1 (ko) * 2005-02-25 2013-03-04 이케이씨 테크놀로지, 인코포레이티드 구리 및 저 ｋ 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법
JP2008535250A (ja) * 2005-04-04 2008-08-28 マリンクロッド・ベイカー・インコーポレイテッド 配線の前工程でイオン注入されたフォトレジストを洗浄するための組成物
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KR20080072905A (ko) * 2005-11-09 2008-08-07 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 표면에 저유전 물질이 있는 반도체 웨이퍼를 재생하기 위한조성물 및 방법
US7582508B2 (en) * 2006-05-31 2009-09-01 Byoung-Choo Park Method for manufacturing an organic semiconductor device that utilizes ionic salt
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Also Published As

Publication number Publication date
JP2011516620A (ja) 2011-05-26
WO2009108474A1 (en) 2009-09-03
KR20100125270A (ko) 2010-11-30
CA2716641A1 (en) 2009-09-03
US20110046036A1 (en) 2011-02-24
EP2247672B1 (en) 2013-06-05
JP5512554B2 (ja) 2014-06-04
EP2247672A1 (en) 2010-11-10
CN101959977B (zh) 2013-12-04
BRPI0908905A2 (pt) 2015-09-22
US8168577B2 (en) 2012-05-01
IL207605A (en) 2014-02-27
IL207605A0 (en) 2010-12-30
TW200942608A (en) 2009-10-16
ZA201005419B (en) 2011-04-28
CN101959977A (zh) 2011-01-26

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