TW200942608A - Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion - Google Patents

Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion

Info

Publication number
TW200942608A
TW200942608A TW098106023A TW98106023A TW200942608A TW 200942608 A TW200942608 A TW 200942608A TW 098106023 A TW098106023 A TW 098106023A TW 98106023 A TW98106023 A TW 98106023A TW 200942608 A TW200942608 A TW 200942608A
Authority
TW
Taiwan
Prior art keywords
based anti
silicon
tetrafluoroborate ion
compositions containing
reflective coating
Prior art date
Application number
TW098106023A
Other languages
English (en)
Chinese (zh)
Inventor
William R Gemmill
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of TW200942608A publication Critical patent/TW200942608A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Drying Of Semiconductors (AREA)
TW098106023A 2008-02-29 2009-02-25 Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion TW200942608A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3244908P 2008-02-29 2008-02-29

Publications (1)

Publication Number Publication Date
TW200942608A true TW200942608A (en) 2009-10-16

Family

ID=40419175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098106023A TW200942608A (en) 2008-02-29 2009-02-25 Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion

Country Status (11)

Country Link
US (1) US8168577B2 (https=)
EP (1) EP2247672B1 (https=)
JP (1) JP5512554B2 (https=)
KR (1) KR101570256B1 (https=)
CN (1) CN101959977B (https=)
BR (1) BRPI0908905A2 (https=)
CA (1) CA2716641A1 (https=)
IL (1) IL207605A (https=)
TW (1) TW200942608A (https=)
WO (1) WO2009108474A1 (https=)
ZA (1) ZA201005419B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101838483B (zh) * 2010-05-11 2012-07-04 华北电网有限公司北京超高压公司 一种溶解型防污闪涂层清除剂及其制备方法
SG11201908804VA (en) * 2017-03-31 2019-10-30 Kanto Kagaku Cleaning solution composition
CN115386954A (zh) * 2022-09-17 2022-11-25 中国科学院新疆理化技术研究所 化合物氟硼酸锂钠和氟硼酸锂钠双折射晶体及制备方法和用途

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US5480585A (en) 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
US5568461A (en) * 1994-04-20 1996-10-22 Matsushita Electric Industrial Co., Ltd. Optical information recording and reproducing apparatus
JPH07311469A (ja) * 1994-05-17 1995-11-28 Hitachi Chem Co Ltd ポリイミド系樹脂膜のレジスト剥離残り除去液およびポリイミド系樹脂膜パターンの製造法
US5571447A (en) 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
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KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
US6150282A (en) 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
US6432209B2 (en) 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
JPH11323394A (ja) 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
KR100288769B1 (ko) 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
US6828289B2 (en) 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6761835B2 (en) 2000-07-07 2004-07-13 Tdk Corporation Phosphor multilayer and EL panel
JP4959095B2 (ja) 2000-07-10 2012-06-20 イーケイシー テクノロジー インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
US20030022800A1 (en) 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
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US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
US6677286B1 (en) 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
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CA2544198C (en) * 2003-10-29 2011-07-26 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
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SG161211A1 (en) * 2005-04-04 2010-05-27 Mallinckrodt Baker Inc Compositions for cleaning ion implanted photoresist in front end of line applications
JP2006310603A (ja) * 2005-04-28 2006-11-09 Nissan Chem Ind Ltd ホウ素化合物を含む半導体用洗浄液組成物及び洗浄方法
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KR100655647B1 (ko) * 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
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TWI611047B (zh) * 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
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Also Published As

Publication number Publication date
WO2009108474A1 (en) 2009-09-03
KR101570256B1 (ko) 2015-11-18
EP2247672B1 (en) 2013-06-05
CA2716641A1 (en) 2009-09-03
ZA201005419B (en) 2011-04-28
IL207605A (en) 2014-02-27
US20110046036A1 (en) 2011-02-24
US8168577B2 (en) 2012-05-01
IL207605A0 (en) 2010-12-30
BRPI0908905A2 (pt) 2015-09-22
CN101959977B (zh) 2013-12-04
JP2011516620A (ja) 2011-05-26
EP2247672A1 (en) 2010-11-10
CN101959977A (zh) 2011-01-26
JP5512554B2 (ja) 2014-06-04
KR20100125270A (ko) 2010-11-30

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