TW200942608A - Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion - Google Patents

Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion

Info

Publication number
TW200942608A
TW200942608A TW098106023A TW98106023A TW200942608A TW 200942608 A TW200942608 A TW 200942608A TW 098106023 A TW098106023 A TW 098106023A TW 98106023 A TW98106023 A TW 98106023A TW 200942608 A TW200942608 A TW 200942608A
Authority
TW
Taiwan
Prior art keywords
based anti
silicon
tetrafluoroborate ion
compositions containing
reflective coating
Prior art date
Application number
TW098106023A
Other languages
English (en)
Chinese (zh)
Inventor
William R Gemmill
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of TW200942608A publication Critical patent/TW200942608A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Drying Of Semiconductors (AREA)
TW098106023A 2008-02-29 2009-02-25 Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion TW200942608A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3244908P 2008-02-29 2008-02-29

Publications (1)

Publication Number Publication Date
TW200942608A true TW200942608A (en) 2009-10-16

Family

ID=40419175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098106023A TW200942608A (en) 2008-02-29 2009-02-25 Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion

Country Status (11)

Country Link
US (1) US8168577B2 (https=)
EP (1) EP2247672B1 (https=)
JP (1) JP5512554B2 (https=)
KR (1) KR101570256B1 (https=)
CN (1) CN101959977B (https=)
BR (1) BRPI0908905A2 (https=)
CA (1) CA2716641A1 (https=)
IL (1) IL207605A (https=)
TW (1) TW200942608A (https=)
WO (1) WO2009108474A1 (https=)
ZA (1) ZA201005419B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101838483B (zh) * 2010-05-11 2012-07-04 华北电网有限公司北京超高压公司 一种溶解型防污闪涂层清除剂及其制备方法
WO2018180256A1 (ja) * 2017-03-31 2018-10-04 関東化學株式会社 洗浄液組成物
CN115386954A (zh) * 2022-09-17 2022-11-25 中国科学院新疆理化技术研究所 化合物氟硼酸锂钠和氟硼酸锂钠双折射晶体及制备方法和用途

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* Cited by examiner, † Cited by third party
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US5568461A (en) * 1994-04-20 1996-10-22 Matsushita Electric Industrial Co., Ltd. Optical information recording and reproducing apparatus
JPH07311469A (ja) * 1994-05-17 1995-11-28 Hitachi Chem Co Ltd ポリイミド系樹脂膜のレジスト剥離残り除去液およびポリイミド系樹脂膜パターンの製造法
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6043206A (en) * 1996-10-19 2000-03-28 Samsung Electronics Co., Ltd. Solutions for cleaning integrated circuit substrates
KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
US6150282A (en) * 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
US6432209B2 (en) 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
JPH11323394A (ja) * 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
KR100288769B1 (ko) * 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6761835B2 (en) * 2000-07-07 2004-07-13 Tdk Corporation Phosphor multilayer and EL panel
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US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
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EP1512050A2 (en) * 2002-06-07 2005-03-09 Mallinckrodt Baker, Inc. Cleaning compositions for microelectronic substrates
US7192860B2 (en) * 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
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JP4620680B2 (ja) * 2003-10-29 2011-01-26 マリンクロッド・ベイカー・インコーポレイテッド ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング／灰化後の残渣の除去剤およびフォトレジスト剥離組成物
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
JP2006041446A (ja) * 2004-07-30 2006-02-09 Sumitomo Chemical Co Ltd 電子部品洗浄液
BRPI0518420A2 (pt) * 2004-12-10 2008-11-25 Mallinckrodt Baker Inc composiÇÕes de limpeza de microeletrânicos nço-aquosas, nço-corrosivas, contendo inibidores de corrosço polimÉricos
KR101238471B1 (ko) * 2005-02-25 2013-03-04 이케이씨 테크놀로지, 인코포레이티드 구리 및 저 ｋ 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법
JP2008535250A (ja) * 2005-04-04 2008-08-28 マリンクロッド・ベイカー・インコーポレイテッド 配線の前工程でイオン注入されたフォトレジストを洗浄するための組成物
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KR20080072905A (ko) * 2005-11-09 2008-08-07 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 표면에 저유전 물질이 있는 반도체 웨이퍼를 재생하기 위한조성물 및 방법
US7582508B2 (en) * 2006-05-31 2009-09-01 Byoung-Choo Park Method for manufacturing an organic semiconductor device that utilizes ionic salt
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Also Published As

Publication number Publication date
JP2011516620A (ja) 2011-05-26
WO2009108474A1 (en) 2009-09-03
KR20100125270A (ko) 2010-11-30
CA2716641A1 (en) 2009-09-03
US20110046036A1 (en) 2011-02-24
EP2247672B1 (en) 2013-06-05
KR101570256B1 (ko) 2015-11-18
JP5512554B2 (ja) 2014-06-04
EP2247672A1 (en) 2010-11-10
CN101959977B (zh) 2013-12-04
BRPI0908905A2 (pt) 2015-09-22
US8168577B2 (en) 2012-05-01
IL207605A (en) 2014-02-27
IL207605A0 (en) 2010-12-30
ZA201005419B (en) 2011-04-28
CN101959977A (zh) 2011-01-26

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