JP5506035B2 - アクチュエータの製造方法 - Google Patents

アクチュエータの製造方法 Download PDF

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Publication number
JP5506035B2
JP5506035B2 JP2010037623A JP2010037623A JP5506035B2 JP 5506035 B2 JP5506035 B2 JP 5506035B2 JP 2010037623 A JP2010037623 A JP 2010037623A JP 2010037623 A JP2010037623 A JP 2010037623A JP 5506035 B2 JP5506035 B2 JP 5506035B2
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Japan
Prior art keywords
actuator
piezoelectric
stress
layer
electric field
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JP2010037623A
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English (en)
Japanese (ja)
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JP2011176038A5 (OSRAM
JP2011176038A (ja
Inventor
隆満 藤井
恭稔 平林
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Fujifilm Corp
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Fujifilm Corp
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Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2010037623A priority Critical patent/JP5506035B2/ja
Priority to US13/032,181 priority patent/US8710716B2/en
Publication of JP2011176038A publication Critical patent/JP2011176038A/ja
Publication of JP2011176038A5 publication Critical patent/JP2011176038A5/ja
Application granted granted Critical
Publication of JP5506035B2 publication Critical patent/JP5506035B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Physical Vapour Deposition (AREA)
JP2010037623A 2010-02-23 2010-02-23 アクチュエータの製造方法 Active JP5506035B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010037623A JP5506035B2 (ja) 2010-02-23 2010-02-23 アクチュエータの製造方法
US13/032,181 US8710716B2 (en) 2010-02-23 2011-02-22 Actuator, actuator structure and method of manufacturing actuator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010037623A JP5506035B2 (ja) 2010-02-23 2010-02-23 アクチュエータの製造方法

Publications (3)

Publication Number Publication Date
JP2011176038A JP2011176038A (ja) 2011-09-08
JP2011176038A5 JP2011176038A5 (OSRAM) 2012-09-20
JP5506035B2 true JP5506035B2 (ja) 2014-05-28

Family

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Family Applications (1)

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JP2010037623A Active JP5506035B2 (ja) 2010-02-23 2010-02-23 アクチュエータの製造方法

Country Status (2)

Country Link
US (1) US8710716B2 (OSRAM)
JP (1) JP5506035B2 (OSRAM)

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JP2013118234A (ja) * 2011-12-02 2013-06-13 Taiyo Yuden Co Ltd 圧電アクチュエータ及びその製造方法
JP6186281B2 (ja) * 2011-12-05 2017-08-23 日本碍子株式会社 赤外線検出素子，赤外線検出モジュール及びその製造方法
JP5756786B2 (ja) * 2012-09-19 2015-07-29 富士フイルム株式会社 圧電デバイス及びその使用方法
JPWO2014065070A1 (ja) * 2012-10-24 2016-09-08 コニカミノルタ株式会社 光学部材及び結合光学系
US9251984B2 (en) 2012-12-27 2016-02-02 Intel Corporation Hybrid radio frequency component
FR3005223B1 (fr) * 2013-04-30 2015-04-24 Sagem Defense Securite Procede de commande d'un dispositif piezoelectrique a element piezoelectrique rapporte sur un support
JP6154729B2 (ja) * 2013-10-28 2017-06-28 富士フイルム株式会社 圧電体素子の製造方法
US9574959B2 (en) * 2014-09-02 2017-02-21 Apple Inc. Various stress free sensor packages using wafer level supporting die and air gap technique
JP6387289B2 (ja) * 2014-09-29 2018-09-05 新科實業有限公司ＳＡＥ Ｍａｇｎｅｔｉｃｓ（Ｈ．Ｋ．）Ｌｔｄ． 薄膜圧電体素子およびその製造方法並びにそれを有するヘッドジンバルアセンブリ、ハードディスク装置、インクジェットヘッド、可変焦点レンズおよびセンサ
US9401469B2 (en) * 2014-09-29 2016-07-26 Sae Magnetics (H.K.) Ltd. Thin-film piezoelectric material element, method of manufacturing the same, head gimbal assembly, hard disk drive, ink jet head, variable focus lens and sensor
US10369787B2 (en) 2015-05-25 2019-08-06 Konica Minolta, Inc. Piezoelectric thin film, piezoelectric actuator, inkjet head, inkjet printer, and method for manufacturing piezoelectric actuator
US10345162B2 (en) 2015-08-28 2019-07-09 Kabushiki Kaisha Toshiba Sensor and electronic device
WO2017160296A1 (en) * 2016-03-17 2017-09-21 Intel Corporation Package integrated piezoelectric haptic actuators
JP6595422B2 (ja) * 2016-08-24 2019-10-23 株式会社東芝 センサ及び電子機器
US10183862B2 (en) * 2016-09-14 2019-01-22 GM Global Technology Operations LLC Method of strain gauge fabrication using a transfer substrate
WO2018060855A1 (en) * 2016-09-27 2018-04-05 Perkinelmer Health Sciences Canada, Inc Capacitors and radio frequency generators and other devices using them
JP6346693B2 (ja) * 2017-05-02 2018-06-20 富士フイルム株式会社 圧電体素子の製造方法
JP6860514B2 (ja) * 2018-03-14 2021-04-14 株式会社東芝 Ｍｅｍｓ素子及びその製造方法
FR3082997B1 (fr) * 2018-06-22 2020-10-02 Commissariat Energie Atomique Procede de transfert de couche(s) de materiau depuis un premier substrat sur un deuxieme substrat
CN112768599B (zh) * 2019-11-04 2025-07-15 科际精密股份有限公司 致动器
WO2021106265A1 (ja) * 2019-11-25 2021-06-03 株式会社村田製作所 圧電デバイス
KR102250895B1 (ko) * 2019-12-23 2021-05-12 주식회사 현대케피코 반도체 소자의 제조방법
CN111048660B (zh) * 2020-03-12 2020-07-28 共达电声股份有限公司 压电换能器、制备压电换能器的方法及电子设备

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JP3218406B2 (ja) 1992-04-23 2001-10-15 キヤノン株式会社 カンチレバー型変位素子、及びこれを用いたカンチレバー型プローブ、及びこのカンチレバー型プローブを用いた走査型トンネル顕微鏡、情報処理装置
JP2003217421A (ja) 2002-01-24 2003-07-31 Matsushita Electric Ind Co Ltd マイクロマシンスイッチ
WO2003063777A2 (en) * 2002-01-25 2003-08-07 Albany Medical College Rapid phenotypic cell-based hiv assay
JP2004119703A (ja) * 2002-09-26 2004-04-15 Matsushita Electric Ind Co Ltd 圧電素子の製造方法及びインクジェットヘッドの製造方法
JP4737375B2 (ja) 2004-03-11 2011-07-27 セイコーエプソン株式会社 アクチュエータ装置の製造方法及び液体噴射ヘッドの製造方法並びに液体噴射装置の製造方法
JP4417861B2 (ja) * 2005-01-31 2010-02-17 富士通株式会社 マイクロスイッチング素子
JP5135683B2 (ja) 2005-02-28 2013-02-06 ソニー株式会社 振動型ジャイロセンサ及び振動素子の製造方法
JP5145637B2 (ja) 2005-03-04 2013-02-20 ソニー株式会社 振動型ジャイロセンサ
US7633213B2 (en) * 2005-03-15 2009-12-15 Panasonic Corporation Actuator, switch using the actuator, and method of controlling the actuator
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JP2007123683A (ja) * 2005-10-31 2007-05-17 National Institute Of Advanced Industrial & Technology 強誘電体薄膜の製造方法、強誘電体薄膜
JP2008042069A (ja) 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 圧電体素子とその製造方法
JP2008091167A (ja) 2006-09-29 2008-04-17 Toshiba Corp マイクロメカニカルデバイス
JP2008218547A (ja) * 2007-03-01 2008-09-18 Fujifilm Corp 圧電体とその駆動方法、圧電素子、及び液体吐出装置
JP2008238330A (ja) * 2007-03-27 2008-10-09 Toshiba Corp Ｍｅｍｓ装置およびこのｍｅｍｓ装置を有する携帯通信端末
JP2009194291A (ja) * 2008-02-18 2009-08-27 Toshiba Corp アクチュエータ
JP2009218401A (ja) * 2008-03-11 2009-09-24 Fujifilm Corp 圧電アクチュエータの駆動方法及び液体吐出ヘッドの駆動方法
JP5385117B2 (ja) * 2009-12-17 2014-01-08 富士フイルム株式会社 圧電ｍｅｍｓスイッチの製造方法

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Publication number Publication date
JP2011176038A (ja) 2011-09-08
US8710716B2 (en) 2014-04-29
US20110204750A1 (en) 2011-08-25

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