JP5504412B2 - ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 - Google Patents
ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 Download PDFInfo
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- JP5504412B2 JP5504412B2 JP2008123731A JP2008123731A JP5504412B2 JP 5504412 B2 JP5504412 B2 JP 5504412B2 JP 2008123731 A JP2008123731 A JP 2008123731A JP 2008123731 A JP2008123731 A JP 2008123731A JP 5504412 B2 JP5504412 B2 JP 5504412B2
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- 239000011342 resin composition Substances 0.000 title claims description 175
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 238000000227 grinding Methods 0.000 claims description 69
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 27
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 17
- 239000004814 polyurethane Substances 0.000 claims description 14
- 229920002635 polyurethane Polymers 0.000 claims description 14
- -1 acrylic compound Chemical class 0.000 claims description 13
- 239000004593 Epoxy Substances 0.000 claims description 11
- 229920000728 polyester Polymers 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 9
- 239000003999 initiator Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 186
- 239000010408 film Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 36
- 125000004386 diacrylate group Chemical group 0.000 description 17
- 239000002202 Polyethylene glycol Substances 0.000 description 15
- 229920001223 polyethylene glycol Polymers 0.000 description 15
- 239000000047 product Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 239000007870 radical polymerization initiator Substances 0.000 description 11
- 238000003776 cleavage reaction Methods 0.000 description 10
- 230000007017 scission Effects 0.000 description 10
- 239000004034 viscosity adjusting agent Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 125000003827 glycol group Chemical group 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 2
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BGGPWYUMZXIUBW-UHFFFAOYSA-N 1,2,3-trichlorothioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=C(Cl)C(Cl)=C2Cl BGGPWYUMZXIUBW-UHFFFAOYSA-N 0.000 description 1
- PUBNJSZGANKUGX-UHFFFAOYSA-N 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=C(C)C=C1 PUBNJSZGANKUGX-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- REQPQFUJGGOFQL-UHFFFAOYSA-N dimethylcarbamothioyl n,n-dimethylcarbamodithioate Chemical compound CN(C)C(=S)SC(=S)N(C)C REQPQFUJGGOFQL-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- YLHXLHGIAMFFBU-UHFFFAOYSA-N methyl phenylglyoxalate Chemical compound COC(=O)C(=O)C1=CC=CC=C1 YLHXLHGIAMFFBU-UHFFFAOYSA-N 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008123731A JP5504412B2 (ja) | 2008-05-09 | 2008-05-09 | ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 |
KR1020090032451A KR101456724B1 (ko) | 2008-05-09 | 2009-04-14 | 웨이퍼의 제조 방법 및 제조 장치와, 경화성 수지 조성물 |
CN2009101392019A CN101577219B (zh) | 2008-05-09 | 2009-04-24 | 晶片的制造方法和制造装置以及固化性树脂组合物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008123731A JP5504412B2 (ja) | 2008-05-09 | 2008-05-09 | ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009272557A JP2009272557A (ja) | 2009-11-19 |
JP5504412B2 true JP5504412B2 (ja) | 2014-05-28 |
Family
ID=41272110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008123731A Active JP5504412B2 (ja) | 2008-05-09 | 2008-05-09 | ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5504412B2 (zh) |
KR (1) | KR101456724B1 (zh) |
CN (1) | CN101577219B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5541681B2 (ja) * | 2010-01-20 | 2014-07-09 | 株式会社ディスコ | ウエーハの平坦化方法 |
JP5524716B2 (ja) * | 2010-05-28 | 2014-06-18 | 株式会社ディスコ | ウェーハの平坦加工方法 |
JP5675378B2 (ja) * | 2011-01-13 | 2015-02-25 | 株式会社ディスコ | 樹脂塗布装置 |
JP2012242525A (ja) * | 2011-05-17 | 2012-12-10 | Dnp Fine Chemicals Co Ltd | 特定の表面形状を有する構造体及び該構造体の製造方法 |
JP6021362B2 (ja) * | 2012-03-09 | 2016-11-09 | 株式会社ディスコ | 板状物の研削方法 |
US9411158B2 (en) * | 2012-09-05 | 2016-08-09 | Sharp Kabushiki Kaisha | Moth-eye film |
WO2014129304A1 (ja) * | 2013-02-19 | 2014-08-28 | 株式会社Sumco | 半導体ウェーハの加工方法 |
JP2015038919A (ja) * | 2013-08-19 | 2015-02-26 | 株式会社ディスコ | ウェーハの製造方法 |
JP6370086B2 (ja) * | 2014-04-23 | 2018-08-08 | 株式会社ディスコ | 樹脂組成物及び板状物の固定方法 |
JP6418130B2 (ja) | 2015-10-20 | 2018-11-07 | 株式会社Sumco | 半導体ウェーハの加工方法 |
JP6500796B2 (ja) * | 2016-02-03 | 2019-04-17 | 株式会社Sumco | ウェーハの製造方法 |
JP2018074019A (ja) * | 2016-10-31 | 2018-05-10 | 株式会社Sumco | ウェーハの製造方法およびウェーハ |
JP6878676B2 (ja) | 2018-02-21 | 2021-06-02 | 株式会社Sumco | ウェーハの製造方法 |
JP7240154B2 (ja) * | 2018-12-05 | 2023-03-15 | 株式会社ディスコ | 保護部材形成方法及び保護部材形成装置 |
JP7254425B2 (ja) * | 2019-06-18 | 2023-04-10 | 株式会社ディスコ | 半導体ウェーハの製造方法 |
CN110465846A (zh) * | 2019-07-25 | 2019-11-19 | 江苏吉星新材料有限公司 | 一种大尺寸蓝宝石衬底晶圆片的面型修复方法 |
JP7173091B2 (ja) * | 2020-05-08 | 2022-11-16 | 信越半導体株式会社 | 平面研削方法 |
CN114290132A (zh) * | 2021-12-30 | 2022-04-08 | 北京天科合达半导体股份有限公司 | 碳化硅晶片的表面处理方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3055401B2 (ja) * | 1994-08-29 | 2000-06-26 | 信越半導体株式会社 | ワークの平面研削方法及び装置 |
JP3924641B2 (ja) * | 1997-10-07 | 2007-06-06 | 東芝セラミックス株式会社 | 半導体ウェーハの製造方法 |
JP2000005982A (ja) * | 1998-06-22 | 2000-01-11 | Enya System:Kk | スライスドウエ−ハの基準面形成方法 |
JP3383227B2 (ja) * | 1998-11-06 | 2003-03-04 | リンテック株式会社 | 半導体ウエハの裏面研削方法 |
JP2002203828A (ja) * | 2000-12-28 | 2002-07-19 | Lintec Corp | ウエハの裏面研削方法 |
TWI310230B (en) * | 2003-01-22 | 2009-05-21 | Lintec Corp | Adhesive sheet, method for protecting surface of semiconductor wafer and method for processing work |
JP4728023B2 (ja) * | 2005-03-24 | 2011-07-20 | 株式会社ディスコ | ウェハの製造方法 |
CN1739915A (zh) * | 2005-09-08 | 2006-03-01 | 大连理工大学 | 化学机械抛光用抛光垫的制备方法 |
JP2007102980A (ja) * | 2005-10-07 | 2007-04-19 | Dainippon Ink & Chem Inc | 光ディスク |
JPWO2008001855A1 (ja) * | 2006-06-30 | 2009-11-26 | 三菱樹脂株式会社 | 活性エネルギー線硬化性組成物、該組成物からなる透明フィルム、及び該フィルムが使用された光ディスク |
-
2008
- 2008-05-09 JP JP2008123731A patent/JP5504412B2/ja active Active
-
2009
- 2009-04-14 KR KR1020090032451A patent/KR101456724B1/ko active IP Right Grant
- 2009-04-24 CN CN2009101392019A patent/CN101577219B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101456724B1 (ko) | 2014-10-31 |
JP2009272557A (ja) | 2009-11-19 |
CN101577219A (zh) | 2009-11-11 |
CN101577219B (zh) | 2012-07-04 |
KR20090117612A (ko) | 2009-11-12 |
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