JP5504412B2 - ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 - Google Patents

ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 Download PDF

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Publication number
JP5504412B2
JP5504412B2 JP2008123731A JP2008123731A JP5504412B2 JP 5504412 B2 JP5504412 B2 JP 5504412B2 JP 2008123731 A JP2008123731 A JP 2008123731A JP 2008123731 A JP2008123731 A JP 2008123731A JP 5504412 B2 JP5504412 B2 JP 5504412B2
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Japan
Prior art keywords
wafer
resin composition
curable resin
meth
grinding
Prior art date
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Active
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JP2008123731A
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English (en)
Japanese (ja)
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JP2009272557A (ja
Inventor
誠 下谷
一弥 宮崎
寛 小野寺
孝徳 和知
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THREEBOND FINE CHEMICAL CO.,LTD.
Disco Corp
Original Assignee
THREEBOND FINE CHEMICAL CO.,LTD.
Disco Corp
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Publication date
Application filed by THREEBOND FINE CHEMICAL CO.,LTD., Disco Corp filed Critical THREEBOND FINE CHEMICAL CO.,LTD.
Priority to JP2008123731A priority Critical patent/JP5504412B2/ja
Priority to KR1020090032451A priority patent/KR101456724B1/ko
Priority to CN2009101392019A priority patent/CN101577219B/zh
Publication of JP2009272557A publication Critical patent/JP2009272557A/ja
Application granted granted Critical
Publication of JP5504412B2 publication Critical patent/JP5504412B2/ja
Active legal-status Critical Current
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2008123731A 2008-05-09 2008-05-09 ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 Active JP5504412B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008123731A JP5504412B2 (ja) 2008-05-09 2008-05-09 ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物
KR1020090032451A KR101456724B1 (ko) 2008-05-09 2009-04-14 웨이퍼의 제조 방법 및 제조 장치와, 경화성 수지 조성물
CN2009101392019A CN101577219B (zh) 2008-05-09 2009-04-24 晶片的制造方法和制造装置以及固化性树脂组合物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008123731A JP5504412B2 (ja) 2008-05-09 2008-05-09 ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物

Publications (2)

Publication Number Publication Date
JP2009272557A JP2009272557A (ja) 2009-11-19
JP5504412B2 true JP5504412B2 (ja) 2014-05-28

Family

ID=41272110

Family Applications (1)

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JP2008123731A Active JP5504412B2 (ja) 2008-05-09 2008-05-09 ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物

Country Status (3)

Country Link
JP (1) JP5504412B2 (zh)
KR (1) KR101456724B1 (zh)
CN (1) CN101577219B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5541681B2 (ja) * 2010-01-20 2014-07-09 株式会社ディスコ ウエーハの平坦化方法
JP5524716B2 (ja) * 2010-05-28 2014-06-18 株式会社ディスコ ウェーハの平坦加工方法
JP5675378B2 (ja) * 2011-01-13 2015-02-25 株式会社ディスコ 樹脂塗布装置
JP2012242525A (ja) * 2011-05-17 2012-12-10 Dnp Fine Chemicals Co Ltd 特定の表面形状を有する構造体及び該構造体の製造方法
JP6021362B2 (ja) * 2012-03-09 2016-11-09 株式会社ディスコ 板状物の研削方法
US9411158B2 (en) * 2012-09-05 2016-08-09 Sharp Kabushiki Kaisha Moth-eye film
WO2014129304A1 (ja) * 2013-02-19 2014-08-28 株式会社Sumco 半導体ウェーハの加工方法
JP2015038919A (ja) * 2013-08-19 2015-02-26 株式会社ディスコ ウェーハの製造方法
JP6370086B2 (ja) * 2014-04-23 2018-08-08 株式会社ディスコ 樹脂組成物及び板状物の固定方法
JP6418130B2 (ja) 2015-10-20 2018-11-07 株式会社Sumco 半導体ウェーハの加工方法
JP6500796B2 (ja) * 2016-02-03 2019-04-17 株式会社Sumco ウェーハの製造方法
JP2018074019A (ja) * 2016-10-31 2018-05-10 株式会社Sumco ウェーハの製造方法およびウェーハ
JP6878676B2 (ja) 2018-02-21 2021-06-02 株式会社Sumco ウェーハの製造方法
JP7240154B2 (ja) * 2018-12-05 2023-03-15 株式会社ディスコ 保護部材形成方法及び保護部材形成装置
JP7254425B2 (ja) * 2019-06-18 2023-04-10 株式会社ディスコ 半導体ウェーハの製造方法
CN110465846A (zh) * 2019-07-25 2019-11-19 江苏吉星新材料有限公司 一种大尺寸蓝宝石衬底晶圆片的面型修复方法
JP7173091B2 (ja) * 2020-05-08 2022-11-16 信越半導体株式会社 平面研削方法
CN114290132A (zh) * 2021-12-30 2022-04-08 北京天科合达半导体股份有限公司 碳化硅晶片的表面处理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3055401B2 (ja) * 1994-08-29 2000-06-26 信越半導体株式会社 ワークの平面研削方法及び装置
JP3924641B2 (ja) * 1997-10-07 2007-06-06 東芝セラミックス株式会社 半導体ウェーハの製造方法
JP2000005982A (ja) * 1998-06-22 2000-01-11 Enya System:Kk スライスドウエ−ハの基準面形成方法
JP3383227B2 (ja) * 1998-11-06 2003-03-04 リンテック株式会社 半導体ウエハの裏面研削方法
JP2002203828A (ja) * 2000-12-28 2002-07-19 Lintec Corp ウエハの裏面研削方法
TWI310230B (en) * 2003-01-22 2009-05-21 Lintec Corp Adhesive sheet, method for protecting surface of semiconductor wafer and method for processing work
JP4728023B2 (ja) * 2005-03-24 2011-07-20 株式会社ディスコ ウェハの製造方法
CN1739915A (zh) * 2005-09-08 2006-03-01 大连理工大学 化学机械抛光用抛光垫的制备方法
JP2007102980A (ja) * 2005-10-07 2007-04-19 Dainippon Ink & Chem Inc 光ディスク
JPWO2008001855A1 (ja) * 2006-06-30 2009-11-26 三菱樹脂株式会社 活性エネルギー線硬化性組成物、該組成物からなる透明フィルム、及び該フィルムが使用された光ディスク

Also Published As

Publication number Publication date
KR101456724B1 (ko) 2014-10-31
JP2009272557A (ja) 2009-11-19
CN101577219A (zh) 2009-11-11
CN101577219B (zh) 2012-07-04
KR20090117612A (ko) 2009-11-12

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