KR101456724B1 - 웨이퍼의 제조 방법 및 제조 장치와, 경화성 수지 조성물 - Google Patents

웨이퍼의 제조 방법 및 제조 장치와, 경화성 수지 조성물 Download PDF

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Publication number
KR101456724B1
KR101456724B1 KR1020090032451A KR20090032451A KR101456724B1 KR 101456724 B1 KR101456724 B1 KR 101456724B1 KR 1020090032451 A KR1020090032451 A KR 1020090032451A KR 20090032451 A KR20090032451 A KR 20090032451A KR 101456724 B1 KR101456724 B1 KR 101456724B1
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KR
South Korea
Prior art keywords
wafer
resin composition
curable resin
meth
grinding
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KR1020090032451A
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English (en)
Korean (ko)
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KR20090117612A (ko
Inventor
마코토 시모타니
가즈야 미야자키
히로시 오노데라
다카노리 와치
Original Assignee
가부시기가이샤 디스코
가부시끼가이샤 쓰리본드
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Application filed by 가부시기가이샤 디스코, 가부시끼가이샤 쓰리본드 filed Critical 가부시기가이샤 디스코
Publication of KR20090117612A publication Critical patent/KR20090117612A/ko
Application granted granted Critical
Publication of KR101456724B1 publication Critical patent/KR101456724B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020090032451A 2008-05-09 2009-04-14 웨이퍼의 제조 방법 및 제조 장치와, 경화성 수지 조성물 KR101456724B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-123731 2008-05-09
JP2008123731A JP5504412B2 (ja) 2008-05-09 2008-05-09 ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物

Publications (2)

Publication Number Publication Date
KR20090117612A KR20090117612A (ko) 2009-11-12
KR101456724B1 true KR101456724B1 (ko) 2014-10-31

Family

ID=41272110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090032451A KR101456724B1 (ko) 2008-05-09 2009-04-14 웨이퍼의 제조 방법 및 제조 장치와, 경화성 수지 조성물

Country Status (3)

Country Link
JP (1) JP5504412B2 (zh)
KR (1) KR101456724B1 (zh)
CN (1) CN101577219B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5541681B2 (ja) * 2010-01-20 2014-07-09 株式会社ディスコ ウエーハの平坦化方法
JP5524716B2 (ja) * 2010-05-28 2014-06-18 株式会社ディスコ ウェーハの平坦加工方法
JP5675378B2 (ja) * 2011-01-13 2015-02-25 株式会社ディスコ 樹脂塗布装置
JP2012242525A (ja) * 2011-05-17 2012-12-10 Dnp Fine Chemicals Co Ltd 特定の表面形状を有する構造体及び該構造体の製造方法
JP6021362B2 (ja) * 2012-03-09 2016-11-09 株式会社ディスコ 板状物の研削方法
WO2014038288A1 (ja) * 2012-09-05 2014-03-13 シャープ株式会社 モスアイフィルム
CN104769704B (zh) * 2013-02-19 2017-10-13 胜高股份有限公司 半导体晶片的加工方法
JP2015038919A (ja) * 2013-08-19 2015-02-26 株式会社ディスコ ウェーハの製造方法
JP6370086B2 (ja) * 2014-04-23 2018-08-08 株式会社ディスコ 樹脂組成物及び板状物の固定方法
JP6418130B2 (ja) 2015-10-20 2018-11-07 株式会社Sumco 半導体ウェーハの加工方法
JP6500796B2 (ja) * 2016-02-03 2019-04-17 株式会社Sumco ウェーハの製造方法
JP2018074019A (ja) 2016-10-31 2018-05-10 株式会社Sumco ウェーハの製造方法およびウェーハ
JP6878676B2 (ja) 2018-02-21 2021-06-02 株式会社Sumco ウェーハの製造方法
JP7240154B2 (ja) * 2018-12-05 2023-03-15 株式会社ディスコ 保護部材形成方法及び保護部材形成装置
JP7254425B2 (ja) * 2019-06-18 2023-04-10 株式会社ディスコ 半導体ウェーハの製造方法
CN110465846A (zh) * 2019-07-25 2019-11-19 江苏吉星新材料有限公司 一种大尺寸蓝宝石衬底晶圆片的面型修复方法
JP7173091B2 (ja) * 2020-05-08 2022-11-16 信越半導体株式会社 平面研削方法
CN114290132A (zh) * 2021-12-30 2022-04-08 北京天科合达半导体股份有限公司 碳化硅晶片的表面处理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11111653A (ja) * 1997-10-07 1999-04-23 Toshiba Ceramics Co Ltd 半導体ウェーハの製造方法
JP2000005982A (ja) 1998-06-22 2000-01-11 Enya System:Kk スライスドウエ−ハの基準面形成方法
JP2006269761A (ja) * 2005-03-24 2006-10-05 Disco Abrasive Syst Ltd ウェハの製造方法
JP2007102980A (ja) * 2005-10-07 2007-04-19 Dainippon Ink & Chem Inc 光ディスク

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3055401B2 (ja) * 1994-08-29 2000-06-26 信越半導体株式会社 ワークの平面研削方法及び装置
JP3383227B2 (ja) * 1998-11-06 2003-03-04 リンテック株式会社 半導体ウエハの裏面研削方法
JP2002203828A (ja) * 2000-12-28 2002-07-19 Lintec Corp ウエハの裏面研削方法
TWI310230B (en) * 2003-01-22 2009-05-21 Lintec Corp Adhesive sheet, method for protecting surface of semiconductor wafer and method for processing work
CN1739915A (zh) * 2005-09-08 2006-03-01 大连理工大学 化学机械抛光用抛光垫的制备方法
WO2008001855A1 (fr) * 2006-06-30 2008-01-03 Mitsubishi Plastics, Inc. Composition durcissable par rayonnement de haute énergie, film transparent fabriqué à partir de la composition et disque optique utilisant le film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11111653A (ja) * 1997-10-07 1999-04-23 Toshiba Ceramics Co Ltd 半導体ウェーハの製造方法
JP2000005982A (ja) 1998-06-22 2000-01-11 Enya System:Kk スライスドウエ−ハの基準面形成方法
JP2006269761A (ja) * 2005-03-24 2006-10-05 Disco Abrasive Syst Ltd ウェハの製造方法
JP2007102980A (ja) * 2005-10-07 2007-04-19 Dainippon Ink & Chem Inc 光ディスク

Also Published As

Publication number Publication date
CN101577219B (zh) 2012-07-04
JP2009272557A (ja) 2009-11-19
JP5504412B2 (ja) 2014-05-28
KR20090117612A (ko) 2009-11-12
CN101577219A (zh) 2009-11-11

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