JP5503799B2 - 化合物半導体発光素子 - Google Patents
化合物半導体発光素子 Download PDFInfo
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- JP5503799B2 JP5503799B2 JP2013506063A JP2013506063A JP5503799B2 JP 5503799 B2 JP5503799 B2 JP 5503799B2 JP 2013506063 A JP2013506063 A JP 2013506063A JP 2013506063 A JP2013506063 A JP 2013506063A JP 5503799 B2 JP5503799 B2 JP 5503799B2
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- 239000004065 semiconductor Substances 0.000 title claims description 120
- 150000001875 compounds Chemical class 0.000 title claims description 81
- 239000000758 substrate Substances 0.000 claims description 70
- 125000006850 spacer group Chemical group 0.000 claims description 64
- 239000000853 adhesive Substances 0.000 claims description 51
- 230000001070 adhesive effect Effects 0.000 claims description 51
- 150000004767 nitrides Chemical class 0.000 claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 18
- 239000003989 dielectric material Substances 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 3
- 230000006798 recombination Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 131
- 238000000034 method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910008599 TiW Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Die Bonding (AREA)
Description
201、401、601 発光部
203、403、603 スペーサー
205、405、605 フレーム
209、409、609 接着剤
210、410、610 基板
220、420、620 バッファー層
230、430、630 n型III族チッ化物半導体層
240、440、640 活性層
250、450、650 p型III族チッ化物半導体層
260、460、660 電流拡散電極
270、670 p側パッド電極
280、480、680 n側電極
Claims (7)
- フレーム、フレームに具備された接着剤、絶縁性である基板、基板の上面に形成されて第1導電性を有する第1化合物半導体層、第1導電性と異なる第2導電性を有する第2化合物半導体層、そして第1化合物半導体層と第2化合物半導体層の間に位置して電子と正孔の再結合を用いて光を生成する活性層を含み、接着剤によってフレームに位置固定される発光部、基板とフレームの間に位置して、接着剤が基板の側面を上っていくことを防止するようにフレームとの基板間に間隔を形成するスペーサー(spacer)、基板を基準としてフレームの反対側で第1化合物半導体層に具備される電極、そして基板を基準としてフレームの反対側で第2化合物半導体層に具備されるパッド電極、とを含むことを特徴とする化合物半導体発光素子。
- スペーサーは接着剤に付着して、フレームと基板の下面との間の間隔は、フレームから接着剤の高さ以上であることを特徴とする、請求項1に記載の化合物半導体発光素子。
- スペーサーが、メッキ層を含むことを特徴とする、請求項2に記載の化合物半導体発光素子。
- スペーサーが、20μm以上80μm以下の厚さを有することを特徴とする、請求項3に記載の化合物半導体発光素子。
- 基板とスペーサーの間に位置して光を反射する光反射層をさらに含むことを特徴とする、請求項1に記載の化合物半導体発光素子。
- 光反射層が基板の下面に形成され、基板の下面と光反射層の間に形成された誘電物質層と、第2化合物半導体層とパッド電極の間に形成された透光性の電流拡散電極、とをさらに含むことを特徴とする、請求項5に記載の化合物半導体発光素子。
- 基板はサファイア基板で、スペーサーは光反射層の下面に形成されたメッキ層を含み、第1化合物半導体層はn型III族チッ化物半導体層を含み、第2化合物半導体層はp型III族チッ化物半導体層を含むことを特徴とする、請求項6に記載の化合物半導体発光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100037799A KR101051326B1 (ko) | 2010-04-23 | 2010-04-23 | 화합물 반도체 발광소자 |
KR10-2010-0037799 | 2010-04-23 | ||
PCT/KR2011/001875 WO2011132860A2 (ko) | 2010-04-23 | 2011-03-18 | 화합물 반도체 발광소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013526032A JP2013526032A (ja) | 2013-06-20 |
JP5503799B2 true JP5503799B2 (ja) | 2014-05-28 |
Family
ID=44834590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013506063A Active JP5503799B2 (ja) | 2010-04-23 | 2011-03-18 | 化合物半導体発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8629458B2 (ja) |
JP (1) | JP5503799B2 (ja) |
KR (1) | KR101051326B1 (ja) |
WO (1) | WO2011132860A2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6136701B2 (ja) * | 2013-07-24 | 2017-05-31 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59165474A (ja) * | 1983-03-10 | 1984-09-18 | Nec Corp | 半導体発光素子 |
JPH05110203A (ja) * | 1991-10-15 | 1993-04-30 | Mitsubishi Electric Corp | 半導体レーザ装置およびその製造方法 |
CN1300859C (zh) * | 1997-01-31 | 2007-02-14 | 松下电器产业株式会社 | 发光元件 |
JPH11220170A (ja) * | 1998-01-29 | 1999-08-10 | Rohm Co Ltd | 発光ダイオード素子 |
JP4601128B2 (ja) | 2000-06-26 | 2010-12-22 | 株式会社光波 | Led光源およびその製造方法 |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
KR20050044518A (ko) | 2001-11-19 | 2005-05-12 | 산요덴키가부시키가이샤 | 화합물 반도체 발광 소자 및 그 제조 방법 |
JP2004343139A (ja) * | 2001-11-19 | 2004-12-02 | Sanyo Electric Co Ltd | 化合物半導体発光素子 |
JP2003174201A (ja) * | 2001-12-04 | 2003-06-20 | Rohm Co Ltd | Ledチップの実装方法、およびledチップの実装構造 |
KR101030068B1 (ko) * | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
KR100499129B1 (ko) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
US7589352B2 (en) * | 2003-11-04 | 2009-09-15 | Shin-Etsu Handotai Co., Ltd. | Light emitting device |
KR100506741B1 (ko) * | 2003-12-24 | 2005-08-08 | 삼성전기주식회사 | 플립칩용 질화물 반도체 발광소자 및 그 제조방법 |
US7795053B2 (en) * | 2004-03-24 | 2010-09-14 | Hitachi Cable Precision Co., Ltd | Light-emitting device manufacturing method and light-emitting device |
JP2006128450A (ja) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子 |
KR100691363B1 (ko) * | 2005-09-23 | 2007-03-12 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
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KR20070070767A (ko) * | 2005-12-29 | 2007-07-04 | 삼성전자주식회사 | 적층 칩 패키지 제조 방법 |
KR100833313B1 (ko) * | 2006-01-02 | 2008-05-28 | 삼성전기주식회사 | 질화갈륨계 발광다이오드 소자 및 그의 제조방법 |
JP4947569B2 (ja) * | 2006-01-26 | 2012-06-06 | シチズン電子株式会社 | 半導体発光素子及びその製造方法 |
JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
JP5251050B2 (ja) * | 2006-10-05 | 2013-07-31 | 三菱化学株式会社 | GaN系LEDチップおよび発光装置 |
KR100869962B1 (ko) * | 2006-12-07 | 2008-11-24 | 한국전자통신연구원 | 전류 확산층을 포함하는 발광소자의 제조방법 |
JP2008192825A (ja) * | 2007-02-05 | 2008-08-21 | Toyoda Gosei Co Ltd | 半導体発光素子 |
JP5074138B2 (ja) * | 2007-09-27 | 2012-11-14 | 昭和電工株式会社 | 発光ダイオードの製造方法 |
WO2009084857A2 (en) * | 2007-12-28 | 2009-07-09 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
JP2009177008A (ja) * | 2008-01-25 | 2009-08-06 | Toshiba Discrete Technology Kk | 発光素子及びその製造方法、発光装置 |
JP5083973B2 (ja) * | 2008-03-28 | 2012-11-28 | スタンレー電気株式会社 | 光半導体素子の製造方法 |
JP2010016292A (ja) * | 2008-07-07 | 2010-01-21 | Showa Denko Kk | 照明装置および照明装置の製造方法 |
-
2010
- 2010-04-23 KR KR1020100037799A patent/KR101051326B1/ko active IP Right Grant
-
2011
- 2011-03-18 US US13/642,637 patent/US8629458B2/en active Active
- 2011-03-18 WO PCT/KR2011/001875 patent/WO2011132860A2/ko active Application Filing
- 2011-03-18 JP JP2013506063A patent/JP5503799B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2011132860A2 (ko) | 2011-10-27 |
WO2011132860A3 (ko) | 2012-01-19 |
US8629458B2 (en) | 2014-01-14 |
US20130049055A1 (en) | 2013-02-28 |
JP2013526032A (ja) | 2013-06-20 |
KR101051326B1 (ko) | 2011-07-22 |
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