JP5495043B2 - レーザアニール方法、装置及びマイクロレンズアレイ - Google Patents

レーザアニール方法、装置及びマイクロレンズアレイ Download PDF

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JP5495043B2
JP5495043B2 JP2010100298A JP2010100298A JP5495043B2 JP 5495043 B2 JP5495043 B2 JP 5495043B2 JP 2010100298 A JP2010100298 A JP 2010100298A JP 2010100298 A JP2010100298 A JP 2010100298A JP 5495043 B2 JP5495043 B2 JP 5495043B2
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laser
microlenses
microlens
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JP2010100298A
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JP2011233597A (ja
JP2011233597A5 (https=
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通伸 水村
由雄 渡辺
誠 畑中
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V Technology Co Ltd
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V Technology Co Ltd
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Priority to JP2010100298A priority Critical patent/JP5495043B2/ja
Priority to CN201180020284.5A priority patent/CN102844839B/zh
Priority to KR1020127030599A priority patent/KR101773219B1/ko
Priority to PCT/JP2011/058990 priority patent/WO2011132559A1/ja
Priority to TW100113695A priority patent/TWI513530B/zh
Publication of JP2011233597A publication Critical patent/JP2011233597A/ja
Publication of JP2011233597A5 publication Critical patent/JP2011233597A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

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  • Recrystallisation Techniques (AREA)
JP2010100298A 2010-04-23 2010-04-23 レーザアニール方法、装置及びマイクロレンズアレイ Expired - Fee Related JP5495043B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010100298A JP5495043B2 (ja) 2010-04-23 2010-04-23 レーザアニール方法、装置及びマイクロレンズアレイ
CN201180020284.5A CN102844839B (zh) 2010-04-23 2011-04-11 激光退火方法、装置以及微透镜阵列
KR1020127030599A KR101773219B1 (ko) 2010-04-23 2011-04-11 레이저 어닐 방법, 장치 및 마이크로렌즈 어레이
PCT/JP2011/058990 WO2011132559A1 (ja) 2010-04-23 2011-04-11 レーザアニール方法、装置及びマイクロレンズアレイ
TW100113695A TWI513530B (zh) 2010-04-23 2011-04-20 雷射退火方法、裝置及微透鏡陣列

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010100298A JP5495043B2 (ja) 2010-04-23 2010-04-23 レーザアニール方法、装置及びマイクロレンズアレイ

Publications (3)

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JP2011233597A JP2011233597A (ja) 2011-11-17
JP2011233597A5 JP2011233597A5 (https=) 2013-05-16
JP5495043B2 true JP5495043B2 (ja) 2014-05-21

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JP2010100298A Expired - Fee Related JP5495043B2 (ja) 2010-04-23 2010-04-23 レーザアニール方法、装置及びマイクロレンズアレイ

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JP (1) JP5495043B2 (https=)
KR (1) KR101773219B1 (https=)
CN (1) CN102844839B (https=)
TW (1) TWI513530B (https=)
WO (1) WO2011132559A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109997213A (zh) * 2016-09-28 2019-07-09 堺显示器制品株式会社 激光退火装置和激光退火方法
US11004682B2 (en) * 2016-12-15 2021-05-11 Sakai Display Products Corporation Laser annealing apparatus, laser annealing method, and mask
CN110462787A (zh) * 2017-01-24 2019-11-15 堺显示器制品株式会社 激光退火装置、激光退火方法和掩模
US11121262B2 (en) 2017-07-12 2021-09-14 Sakai Display Products Corporation Semiconductor device including thin film transistor and method for manufacturing the same
CN110870078A (zh) 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法
WO2019102548A1 (ja) * 2017-11-22 2019-05-31 堺ディスプレイプロダクト株式会社 レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法
CN108227376A (zh) * 2018-01-03 2018-06-29 京东方科技集团股份有限公司 一种微结构的制备方法、压印模版、显示基板
WO2019171502A1 (ja) * 2018-03-07 2019-09-12 堺ディスプレイプロダクト株式会社 レーザアニール装置、レーザアニール方法およびアクティブマトリクス基板の製造方法
US20210225653A1 (en) * 2018-06-06 2021-07-22 Sakai Display Products Corporation Laser annealing method, laser annealing apparatus and method for producing active matrix substrate
JP2020004861A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004859A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004860A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
US11495689B2 (en) 2018-08-08 2022-11-08 Sakai Display Products Corporation Thin-film transistor and method for producing same
CN112916873B (zh) 2021-01-26 2022-01-28 上海交通大学 基于脉冲激光驱动的微滴三维打印系统及方法
CN114799225B (zh) * 2022-05-05 2023-05-23 上海交通大学 脉冲激光驱动金属微滴打印系统及调节方法
KR102738691B1 (ko) * 2022-12-06 2024-12-05 (주)알엔알랩 기판 구조체에 대한 레이저 열처리 방법 및 이를 적용한 전자 소자의 제조 방법

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Publication number Priority date Publication date Assignee Title
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
JP3239314B2 (ja) * 1994-09-16 2001-12-17 日本板硝子株式会社 平板レンズアレイおよびそれを用いた液晶表示素子
JP2001269789A (ja) * 2000-01-20 2001-10-02 Komatsu Ltd レーザ加工装置
US6625181B1 (en) * 2000-10-23 2003-09-23 U.C. Laser Ltd. Method and apparatus for multi-beam laser machining
JP2003109911A (ja) * 2001-10-01 2003-04-11 Sharp Corp 薄膜処理装置、薄膜処理方法および薄膜デバイス
JP2004311906A (ja) * 2003-04-10 2004-11-04 Phoeton Corp レーザ処理装置及びレーザ処理方法
KR100606450B1 (ko) * 2003-12-29 2006-08-11 엘지.필립스 엘시디 주식회사 주기성을 가진 패턴이 형성된 레이저 마스크 및 이를이용한 결정화방법
JP4199820B2 (ja) * 2005-06-01 2008-12-24 フェトン株式会社 レーザー加工装置及びレーザー加工方法
JP2008294186A (ja) * 2007-05-24 2008-12-04 Shimadzu Corp 結晶化装置および結晶化方法
JP5145598B2 (ja) * 2008-09-29 2013-02-20 株式会社ブイ・テクノロジー レーザ加工方法及それに使用する装置

Also Published As

Publication number Publication date
TW201143949A (en) 2011-12-16
JP2011233597A (ja) 2011-11-17
KR101773219B1 (ko) 2017-08-31
TWI513530B (zh) 2015-12-21
WO2011132559A1 (ja) 2011-10-27
CN102844839A (zh) 2012-12-26
CN102844839B (zh) 2015-08-26
KR20130065661A (ko) 2013-06-19

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