KR101773219B1 - 레이저 어닐 방법, 장치 및 마이크로렌즈 어레이 - Google Patents

레이저 어닐 방법, 장치 및 마이크로렌즈 어레이 Download PDF

Info

Publication number
KR101773219B1
KR101773219B1 KR1020127030599A KR20127030599A KR101773219B1 KR 101773219 B1 KR101773219 B1 KR 101773219B1 KR 1020127030599 A KR1020127030599 A KR 1020127030599A KR 20127030599 A KR20127030599 A KR 20127030599A KR 101773219 B1 KR101773219 B1 KR 101773219B1
Authority
KR
South Korea
Prior art keywords
microlenses
laser
laser light
pitch
microlens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127030599A
Other languages
English (en)
Korean (ko)
Other versions
KR20130065661A (ko
Inventor
미찌노부 미즈무라
요시오 와따나베
마꼬또 하따나까
Original Assignee
브이 테크놀로지 씨오. 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 브이 테크놀로지 씨오. 엘티디 filed Critical 브이 테크놀로지 씨오. 엘티디
Publication of KR20130065661A publication Critical patent/KR20130065661A/ko
Application granted granted Critical
Publication of KR101773219B1 publication Critical patent/KR101773219B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

Landscapes

  • Recrystallisation Techniques (AREA)
KR1020127030599A 2010-04-23 2011-04-11 레이저 어닐 방법, 장치 및 마이크로렌즈 어레이 Expired - Fee Related KR101773219B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-100298 2010-04-23
JP2010100298A JP5495043B2 (ja) 2010-04-23 2010-04-23 レーザアニール方法、装置及びマイクロレンズアレイ
PCT/JP2011/058990 WO2011132559A1 (ja) 2010-04-23 2011-04-11 レーザアニール方法、装置及びマイクロレンズアレイ

Publications (2)

Publication Number Publication Date
KR20130065661A KR20130065661A (ko) 2013-06-19
KR101773219B1 true KR101773219B1 (ko) 2017-08-31

Family

ID=44834086

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127030599A Expired - Fee Related KR101773219B1 (ko) 2010-04-23 2011-04-11 레이저 어닐 방법, 장치 및 마이크로렌즈 어레이

Country Status (5)

Country Link
JP (1) JP5495043B2 (https=)
KR (1) KR101773219B1 (https=)
CN (1) CN102844839B (https=)
TW (1) TWI513530B (https=)
WO (1) WO2011132559A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109997213A (zh) * 2016-09-28 2019-07-09 堺显示器制品株式会社 激光退火装置和激光退火方法
US11004682B2 (en) * 2016-12-15 2021-05-11 Sakai Display Products Corporation Laser annealing apparatus, laser annealing method, and mask
CN110462787A (zh) * 2017-01-24 2019-11-15 堺显示器制品株式会社 激光退火装置、激光退火方法和掩模
US11121262B2 (en) 2017-07-12 2021-09-14 Sakai Display Products Corporation Semiconductor device including thin film transistor and method for manufacturing the same
CN110870078A (zh) 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法
WO2019102548A1 (ja) * 2017-11-22 2019-05-31 堺ディスプレイプロダクト株式会社 レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法
CN108227376A (zh) * 2018-01-03 2018-06-29 京东方科技集团股份有限公司 一种微结构的制备方法、压印模版、显示基板
WO2019171502A1 (ja) * 2018-03-07 2019-09-12 堺ディスプレイプロダクト株式会社 レーザアニール装置、レーザアニール方法およびアクティブマトリクス基板の製造方法
US20210225653A1 (en) * 2018-06-06 2021-07-22 Sakai Display Products Corporation Laser annealing method, laser annealing apparatus and method for producing active matrix substrate
JP2020004861A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004859A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
JP2020004860A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
US11495689B2 (en) 2018-08-08 2022-11-08 Sakai Display Products Corporation Thin-film transistor and method for producing same
CN112916873B (zh) 2021-01-26 2022-01-28 上海交通大学 基于脉冲激光驱动的微滴三维打印系统及方法
CN114799225B (zh) * 2022-05-05 2023-05-23 上海交通大学 脉冲激光驱动金属微滴打印系统及调节方法
KR102738691B1 (ko) * 2022-12-06 2024-12-05 (주)알엔알랩 기판 구조체에 대한 레이저 열처리 방법 및 이를 적용한 전자 소자의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311906A (ja) 2003-04-10 2004-11-04 Phoeton Corp レーザ処理装置及びレーザ処理方法
JP2005197730A (ja) 2003-12-29 2005-07-21 Lg Philips Lcd Co Ltd レーザーマスク、結晶化方法、これを利用した表示素子、及び表示素子の製造方法
JP2010075982A (ja) 2008-09-29 2010-04-08 V Technology Co Ltd レーザ加工方法及それに使用する装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
JP3239314B2 (ja) * 1994-09-16 2001-12-17 日本板硝子株式会社 平板レンズアレイおよびそれを用いた液晶表示素子
JP2001269789A (ja) * 2000-01-20 2001-10-02 Komatsu Ltd レーザ加工装置
US6625181B1 (en) * 2000-10-23 2003-09-23 U.C. Laser Ltd. Method and apparatus for multi-beam laser machining
JP2003109911A (ja) * 2001-10-01 2003-04-11 Sharp Corp 薄膜処理装置、薄膜処理方法および薄膜デバイス
JP4199820B2 (ja) * 2005-06-01 2008-12-24 フェトン株式会社 レーザー加工装置及びレーザー加工方法
JP2008294186A (ja) * 2007-05-24 2008-12-04 Shimadzu Corp 結晶化装置および結晶化方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311906A (ja) 2003-04-10 2004-11-04 Phoeton Corp レーザ処理装置及びレーザ処理方法
JP2005197730A (ja) 2003-12-29 2005-07-21 Lg Philips Lcd Co Ltd レーザーマスク、結晶化方法、これを利用した表示素子、及び表示素子の製造方法
JP2010075982A (ja) 2008-09-29 2010-04-08 V Technology Co Ltd レーザ加工方法及それに使用する装置

Also Published As

Publication number Publication date
TW201143949A (en) 2011-12-16
JP2011233597A (ja) 2011-11-17
TWI513530B (zh) 2015-12-21
WO2011132559A1 (ja) 2011-10-27
CN102844839A (zh) 2012-12-26
CN102844839B (zh) 2015-08-26
KR20130065661A (ko) 2013-06-19
JP5495043B2 (ja) 2014-05-21

Similar Documents

Publication Publication Date Title
KR101773219B1 (ko) 레이저 어닐 방법, 장치 및 마이크로렌즈 어레이
CN1218404C (zh) 半导体器件
KR101645770B1 (ko) 저온 폴리실리콘막의 형성 장치 및 방법
US20190157462A1 (en) Laser beam irradiation device, thin-film transistor, and method of manufacturing thin-film transistor
TWI521563B (zh) 雷射處理裝置
WO2011158612A1 (ja) 低温ポリシリコン膜の形成装置及び方法
CN107430990B (zh) 薄膜晶体管基板、显示面板以及激光退火方法
CN213366530U (zh) 激光退火装置
JP6666426B2 (ja) レーザーアニール装置、マスク、及びレーザーアニール方法
TWI765905B (zh) 用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器
US10840095B2 (en) Laser irradiation device, thin-film transistor and thin-film transistor manufacturing method
KR101108169B1 (ko) 연속 측면 결정화용 마스크 및 이를 구비하는 연속 측면 결정화 장치
JP2007281465A (ja) 多結晶膜の形成方法
US20200402823A1 (en) Laser annealing device, laser annealing method, and active matrix substrate production method
WO2021181700A1 (ja) レーザアニール装置およびレーザアニール方法
CN111033693A (zh) 激光照射装置、薄膜晶体管的制造方法、程序及投影掩模
TW201820731A (zh) 雷射照射裝置及薄膜電晶體的製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20200602

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210825

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210825

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000