TW201143949A - Laser annealing method, apparatus and microlens array - Google Patents

Laser annealing method, apparatus and microlens array Download PDF

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TW201143949A
TW201143949A TW100113695A TW100113695A TW201143949A TW 201143949 A TW201143949 A TW 201143949A TW 100113695 A TW100113695 A TW 100113695A TW 100113695 A TW100113695 A TW 100113695A TW 201143949 A TW201143949 A TW 201143949A
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microlens
microlenses
laser light
laser
group
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TWI513530B (en
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Michinobu Mizumura
Yoshio Watanabe
Makoto Hatanaka
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V Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

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Abstract

This invention provides a laser annealing method, apparatus, and microlens array. According to this invention, the microlens array can be formed at a large pitch different from the pitch in a planned transistor formation area in an amorphous silicon film. Besides, minute polysilocon film area can be formed by laser annealing in the amorphous silicon film at a pitch smaller than the arrangement pitch of the microlens array. For a first group 11, a second group 12, and a third group 13 of microlenses, three rows of microlenses are arranged at the same pitch P within each group, and microlenses of adjacent groups are separated by a spacing of P+1/3P. A laser annealing area is formed at a pitch of P/3 by conducting a first step wherein a first laser ray is irradiated from the three rows of microlenses in the first group, and next a second step wherein a second laser ray is irradiated from 2x3 rows of microlenses 5 when a substrate 20 is moved by a distance of 3P, and then repeating the same steps.

Description

201143949 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種’薄膜電晶體液晶面板等之中，將非晶石夕 膜藉由雷射光之照射退火而形成低溫多晶矽膜的雷射退火方法、 裝置及使用於其之微透鏡陣列’特別係關於一種，使用微透鏡陣 歹1J，可僅於應形成薄膜電晶體之區域退火的雷射退火方法及裝置。 【先前技術】 液晶面板中’於玻璃基板上形成非晶石夕膜，對此非晶石夕膜， 由基板之一端，將具有線狀之光束形狀的雷射光，藉由與該光束 之長邊方向垂直方向的掃瞄，形成低溫多晶矽膜。藉由此一線狀 之雷射光掃瞄，非晶矽膜由雷射光加熱並先熔融，^後，使藉雷 射光之通過而熔融之矽急冷，經由凝固而結晶化，形成低溫^曰 矽膜(專利文獻1)。 廣m 然而，此一低溫多晶石夕膜之形成方法中，非晶石夕膜之全體接 受雷射光之照射形成高溫，藉非晶石夕膜之熔融凝固，全體成為低 溫多晶矽膜。因此，因應形成薄膜電晶體(1^朽11111^1^_以 下以TFT稱之)區域以外的區域亦被退火，故有處理效率不佳之問 題0 因此，有文獻提案：使用微透鏡陣列，藉由各微透鏡，於非 晶矽膜上，使雷射光聚光於微小的複數個區域，在對應於各電晶 體之微小區域上，同時個別地照射雷射光並退火之方法(專利文^ 2)。此一方法，因僅對複數個的TFT形成預定區域之非晶石夕膜加 以退火處理，故有雷射光之利用效率變高的優點。 、 [習知技術文獻] [專利文獻] 專利文獻1 :曰本特許第3945805號公報 專利文獻2:日本特開2〇〇4 —311906號公報 4 201143949 【發明内容】 [發明欲解決之問題] 、然而’此一使用習知之微透鏡陣列的雷射退火方法中，因微 透鏡陣列之配列間距被固定，故必須以與之相合的間距設置Τρτ 形成區域，抑或以與TFT形成預定區域之位置相合的間°距組裝微 透鏡陣列，具有通用性低之問題。 鑑於此一問題，本發明之目的在於提供一可由與非晶矽膜的 電晶體形成預定區域之間距相異的大間距構成微透鏡陣列，另， ，供一可由較微透鏡陣列之配列間距更小的間距，於非晶矽膜上 藉由雷射退火形成微小多晶石夕膜區域之雷射退火方法、裝置及微 透鏡陣列。 [解決問題之方式] 本發明之雷射退火方法使用之雷射光照射裝置，具有：微透 鏡陣列，於m(m為自然數)列配置有各列複數個之微透鏡；光罩’ 具有與各微透鏡對應之開口部；雷射光之產生源；導光部，將來 ，，，生源之雷射光引導至該光罩與微透鏡；以及驅動機構，將 亥光罩及彳&透鏡的雷射光之照n統，與基板相對地在和該 微透鏡之列垂直之方向移動； 該雷射退火方法之特徵為：該m列之微透鏡，每η(η為自然 n<m)列構成一群，於各群之中，使微透鏡以同一間距ρ配列； 各群相互之間’微透鏡以P+P/n分隔；第i步驟中，自n列分之 ，透鏡，對_基板上之非晶賴照射第丨次雷射光，以施行雷 f退火；第2步驟中，於該雷射光之照射系統與該基板相對地移 昭之時點，自2Xn列分之微透鏡，於基板上之非晶石夕膜 ':射=2次雷械，以施行f概火；其後關樣方式施行多數 -人之雷射光照射，以P/n間距形成雷射退火區域。 白妙^卜’本發明之雷射退火裝置具有：微透鏡陣列，於m(m為 1=)列配置有各列複數個之微透鏡；光罩，具有與各微透鏡對 π部；雷射光之產生源；導光部，將來自此產生源之雷射 先引導至該光罩與微透鏡；驅動機構，將包含該光罩及微透鏡的 201143949 雷射光之照射系統’與基板相對地在和該微透鏡之列垂直之方向 移動；以及控置，控繼驅動機構之動作與該產生源之動作； 該雷射退火裝置之特徵為： 該m列之微透鏡，每n(n為自然數，n<m)列構成一群，於各 群之中’使微透鏡以同一間距p配列；各群相互之間，微透鏡以 P+P/n分隔； 該控制裝置’控制該驅動機構及該產生源，於第1步驟中， 自^列分之微透鏡，對於該基板上之非晶矽膜照射第1次雷射光， 以施行雷射秋；於帛2步财，於該雷射狀照射祕與該基 板相，地移動ηχρ距離之時點，自2xn列分之微透鏡，於基板上 之非as石夕膜照射第2次雷射光，以施行雷射退火；之後相同，施 行多數次之雷射光照射，以p/n間距形成雷射退火區域。 進一步，本發明之微透鏡陣列被使用於雷射光之照射裝置， m(m為自然數)列配置有各列複數個之微透鏡的微透鏡陣列中，該 m列之微透鏡’每•為自然數’ n<m)列構成一群，於各群之中， 使微透鏡以同一間距p配列；各群相互之間，微透鏡以p+p/n分 隔。 [發明之效果] s―依本發明，因群之最後列的微透鏡與最前列的微透鏡之間， 隔著P+P/n之間隔’而若於雷射光之照射系統與基板相對地移動， 使移動距離為ηχΡ之時點，照射雷射光，則微透鏡陣列的間距p 之間可設(n-1)列的雷射光照射區域。亦即，微透鏡其各群之配列 間距為P之中，可設n列之照射區域，可使照射區域之配列間距 微細。藉此，可由與非晶矽膜的電晶體形成預定區域之間距相異 的大間距構成微透鏡陣列，並且，可由較微透鏡陣列之配列間距 更小的間距於非晶矽膜雷射退火藉以形成微小多晶矽膜區域。 【實施方式】 以下’對本發明之最佳實施態樣’參考添附之附圖具體地加 以說明。圖1為顯示使用微透鏡5之雷射照射裝置的圖。、圖1所 6 201143949 退火，使此-通道區形預定區域照射雷射光並 置。此—使用微靜域夕結晶化’形成多晶矽膜之裝 > 鏡陣列照射於被昭射體6。♦射、译微透鏡5構成之微透 扣削夕二^ 雷射先源1，例如，將波長為遍腹或 鏡陣列係Ϊ 如驗之重複週期放射的準分子雷射。微透 ^ 2 =夕數之微透鏡5配置於透明基板4之裝置，其將 、光來光於薄膜電晶體形成預定區域，該薄 ^ 6平行配置’·微透鏡5 ’係以電晶體形成預定區域之配 射H以上，ϊ數倍(例如2)之間距配置。本實施態樣之被照 歹口，為薄臈電晶體，以雷射光照射其a-Si膜之通道區 =成預定區域’形成多晶料道區。微透鏡5之上方，配置有藉 由微透鏡5，使雷射光僅照射於通道形成預定 一光罩3，於被歸體6帽定通道區。 ^精此 例如，形成晝素之驅動電晶體以作為液晶顯示裝置的周邊電 路之情況，將玻璃基板上由A1等之金屬膜形成的閘電極，藉由錢 鍍成形圖案。之後，以矽烷與Η:氣體為原料氣體，藉由25〇〜3〇〇<t 之低溫電漿CVD法’形成全面由SiN膜形成之閘極絕緣模。其後， 於閘極絕緣模上，例如，藉電漿CVD法形成a_Sh H膜。此一 ^_Si: Η膜係以石夕院與H2氣體所混合之氣體作為原料氣體而成膜。使此 一 a-Si : Η膜之閘電極上的區域作為通道形成預定區域，於各通 道區配置1個的微透鏡5,僅對此一通道形成預定區域照射雷射光 並退火，將此一通道形成預定區域多結晶化，形成多晶矽通道區。 另外，微透鏡5並非為1列’而係配置為複數列，圖2至圖9之 本實施態樣，配置設有3群之3列，共計9列之微透鏡。 圖2為顯示微透鏡5之配置、與雷射光之照射區域的平面圖。 圖3至圖9，其等之上方圖’顯示藉微透鏡將雷射光聚光於非晶石夕 膜上之區域10(接受退火之區域)及微透鏡5之平面配置；其等之 201143949 璃基板上照射雷射光之前視圖。於微透鏡5之 之遮光板V 鮮3 ’於絲3之上方配置有㈣射光遮光 之各群3列共計9列。第1群群I 第3群13的各群之中’微透鏡5以一定的間距ρ配置。 12間的微透鏡相互之間、及第2群12與第3群13間 的镟透鏡相互之間，皆係以p+1/3p之間隔分隔。 玻璃基板20上之全祕成有閘極潛21，更於閘極層21上形 成非晶發層22。此外，圖3所示之初期階段，光罩 及遮光板7較玻璃基板20其上方域配置得更近。 > 之後，以固定遮光板7、光罩3及微透鏡5之狀態，使玻璃某 圖中ff雜。此—基板之移動紐，係鶴微透鏡的酉土己 列間距P之3倍的距離量後，照射f射光，再將基板移動間距p 之3倍的距離量後’又照射雷射光。 其次，對藉如上述之構成的雷射照射裝置實施本實施態樣之 雷射退火方法的％合其動作加以說明。此外，以下的動作 控制驅動機構與雷射光之產生源之動作的控制裝置加以控曰談 驅動機構係將含有光罩及微轉的雷械之騎紐= 對地在和該微透鏡之列垂直之方向移動。如圖3所示，光 其開口部與透明基板4上之各微透鏡5對應，與微透鏡5之位置 關係保持於-定的狀態。遮光板7除了前端侧的(基板2() 列分之微透鏡5其上方區域，覆於其他微透鏡5之上方，將雷射 之後，如圖4所示，使玻璃基板20往圖中右方移動。如此， 則玻璃基板20之位置，在移動間距p之3倍距離量的時點，入 微透鏡5及光罩3下方微透鏡5之3列分的寬度量。而於此一 點，照射1發雷射光30。如此，則非晶矽膜22中，由間距卩之3 列分的微透鏡5所聚光之區域10藉由雷射光加熱而升溫，並 凝固，使此一區域10結晶化。藉此，此一 3列分之區域1〇 1 多晶石夕膜。3列分之微透鏡5以外的微透鏡5，藉遮光板7遮光不 201143949 • 被雷射光照射。 其次，如圖5所示，更使玻璃基板20移動，在移動間距p之 3倍距離的時點，亦即，移動開始後，移動6p之距離量二時點， 照射1發雷射光。如此，則在由第1群11之微透鏡5與第2群U 之微透鏡5所聚光之區域1〇，實施雷射退火。藉此，追加於 之步驟中雷射光所照射的第1群11之區域10，圖5之步、在# 第1群與第2群之微透鏡5照射雷射光之區域10上，^施 = 火。之後’因第1群與第2群，間隔P+1/3P之距離，故圖5之^ 驟一結束，則如圖5及圖2所示，玻璃基板20其前端部約3 & 的部分(約3P之寬度的部分)中，藉第【次之照射的第！群之微 鏡5所形成的雷射退火區域10，與藉第2次照射的第2 鏡5所形成的雷射退火區域10，錯開1/3p之距離。亦門 P配列的區域1G之中，僅有3列，對以第丨發 士 1〇形成有以1/3P鄰接之區域1G。 之日年示’玻璃基板2G於移動開始後移動9P距離 5時Ϊ，订第3次雷射光之照射。如此，則雷射光it過第i群 if昭I12及第3群13之微透鏡的全部微透鏡聚光於非晶矽 f 7之，此，玻璃基板20之前端部約3P寬度的部分中， 第人之弟1群的雷射光照射、第2次之第2群 的雷射光照射’每隔1/3P錯開照射，以之 =距升，成3列χ3共計9列的雷射退火區域1〇。由 自S約3Ρ位置至距離約6Ρ位置為止“ 透鏡之1群的微透鏡之照射、與第3次之第2群的微 透鏡=射的結果，形成共計6列之雷射退火區域1〇。 、次，如圖7所示，更於使玻璃基板20移動3Ρ s罩r之 。如此，則玻璃基板 “的非/、刚^進入約3P寬度量，此-去除約3P = 之部分，接受雷射光的照射。此—步驟中，雷 = U、第2群12及第3群13之全部的^ 5 人;3日石夕膜22上，使各區域10接受雷射退火。藉此，對 201143949 玻璃基板20之自前端起約6P寬度的部分，18列之雷射退火區域 10以1/3P之間距並排；進一步，對再3P距離之後方的部分，6 列的區域10以1/3P之間距與2/3P之間距並排；進一步，約再3p 距離之更後方的部分，3列的區域10以P之間距並排。 其後，同樣地，於玻璃基板10移動3P距離的時點，發射】 發雷射光，使用自第1群11至第3群13為止全部的微透鏡5，重 複雷射退火。藉此，如圖8與圖9所示，以1/3P之間距並排的雷 射退火區域10之區域將被擴大。 最後，玻璃基板之後端部中，微透鏡5與光罩3之前端側的 部分，以每次3列方式，藉由以其他遮光板將雷射光遮光，停止 雷射光的照射。圖中，來自最左側3列之微透鏡5的雷射光停止 照射後，使來自次3列之微透鏡5的雷射光停止照射，其後，使 玻璃基板20移動3P距離，施行最後的雷射光照射，則非晶矽膜 之全部區域完成雷射退火。 、 如以上’不拘於微透鏡5之配列間距是否為p，於玻璃基板 20上，形成配列間距為丨/卯之多晶矽區域1〇。藉此，可由較&透 鏡5之配列間距更微細之間距形成多晶矽之微細區域。此外，將 屬於各群之間距，適當設為同一之微透鏡的列之數目，藉由使各 群間的間隔為(P+P/n)，可將雷射退火區域1〇，即，微細多晶矽區 域之形成間距’不拘於微透鏡5之間距設定為任意(p/n)。 [產業上利用性] 依本發明’因可由較微透鏡陣列之配列間距，形成更細小之 間距的微小雷射退火區域，故使半導體裝置之微小化為可能，並 使微透鏡陣列之製造更加容易，極為有用。 【圖式簡單說明】 圖1係顯示雷射照射裝置之圖。 圖2係顯示雷射照射區域之推移的示意圖。 w圖< 3上方圖係顯示藉微透鏡於非晶賴上聚光雷射光之區域 (接文退火之區域)與微透鏡5之平面配置；下方圖為顯示玻璃基 10 201143949 板上照射之雷射光的前視圖。 圖4係顯示圖3之下一步驟的圖。 圖5係顯示圖4之下一步驟的圖。 圖6係顯示圖5之下一步驟的圖。 圖7係顯示圖6之下一步驟的圖。 圖8係顯示圖7之下一步驟的圖。 圖9係顯示圖8之下一步驟的圖。 【主要元件符號說明】 1雷射光源 2透鏡群 3光罩 4透明基板 5微透鏡 6被照射體 7遮光板 10 區域 11 第1群(之微透鏡) 12 第2群(之微透鏡) 13 第3群(之微透鏡) 20 玻璃基板 21 閘極層 22 非晶砍膜 30 雷射光 P 間距 11201143949 6. TECHNOLOGICAL FIELD OF THE INVENTION [Technical Field] The present invention relates to laser annealing of a low-temperature polycrystalline germanium film by annealing an amorphous austenite film by irradiation of laser light in a thin film transistor liquid crystal panel or the like. The method, the device and the microlens array used therefor are particularly related to a laser annealing method and apparatus which can be annealed only in a region where a thin film transistor should be formed, using a microlens array. [Prior Art] In the liquid crystal panel, 'an amorphous stone film is formed on the glass substrate, and the amorphous light film, from one end of the substrate, will have a linear beam shape of the laser light, by the length of the light beam Scanning in the vertical direction of the side direction forms a low temperature polysilicon film. By the linear laser scanning, the amorphous germanium film is heated by the laser light and melted first, and then the molten germanium is cooled by the passage of the laser light, and crystallized by solidification to form a low temperature film. (Patent Document 1). However, in the method for forming a low-temperature polycrystalline stone film, all of the amorphous stone film is irradiated with laser light to form a high temperature, and the amorphous carbon stone is melt-solidified, and the whole becomes a low-temperature polycrystalline film. Therefore, in order to form a thin film transistor (1? By means of each microlens, on the amorphous germanium film, the laser light is condensed in a small plurality of regions, and the laser light is individually irradiated and annealed on a minute region corresponding to each of the transistors (Patent Document 2) ). In this method, since only a plurality of amorphous regions formed by forming a predetermined region of the TFT are annealed, there is an advantage that the utilization efficiency of the laser light is increased. [Patent Document] [Patent Document 1] Patent Document 1: Japanese Patent Laid-Open No. 3945805 Patent Document 2: JP-A-2002-311906 However, in the laser annealing method using the conventional microlens array, since the arrangement pitch of the microlens array is fixed, it is necessary to set the Τρτ formation region at a pitch corresponding thereto, or to form a predetermined region with the TFT. The assembly of the microlens array with the matching interval is a problem of low versatility. In view of such a problem, an object of the present invention is to provide a microlens array which can be formed by a large pitch which is different from a predetermined area formed by a crystal of an amorphous germanium film, and further, can be arranged by a pitch of a microlens array. A small pitch, a laser annealing method, apparatus, and microlens array for forming a microcrystalline polycrystalline film region by laser annealing on an amorphous germanium film. [Means for Solving the Problem] The laser light irradiation device used in the laser annealing method of the present invention has a microlens array in which a plurality of microlenses of each column are arranged in a m (m is a natural number) column; An opening corresponding to each microlens; a source of laser light; a light guiding portion, and, in the future, a laser light from the source is guided to the reticle and the microlens; and a driving mechanism for the ray and the lens of the 彳& The illuminating photo is moved in a direction perpendicular to the column of the microlenses opposite to the substrate; the laser annealing method is characterized in that the m-column microlenses are each η (n is a natural n<m) column a group, in each group, the microlenses are arranged at the same pitch ρ; each group's 'microlenses are separated by P+P/n; in the i-th step, from the n-column, the lens, on the _substrate The amorphous light illuminates the third laser light to perform the annealing of the lightning f; in the second step, when the laser light irradiation system and the substrate are relatively moved, the microlens from the 2Xn column is on the substrate. Amorphous stone ceremonial membrane:: shot = 2 times of firearms, to perform f-fire; Most of the lines - human laser light, forming a laser annealing area at a P/n pitch. The laser annealing apparatus of the present invention has a microlens array in which a plurality of microlenses of each column are arranged in a m (m is 1 =) column; a photomask having a π portion with each microlens; and a laser beam a light source for guiding a laser from the source to the reticle and the microlens; and a driving mechanism for illuminating the illumination system of the 201143949 laser including the reticle and the microlens Moving in a direction perpendicular to the column of the microlenses; and controlling, controlling the action of the driving mechanism and the action of the generating source; the laser annealing device is characterized by: the microlens of the m columns, each n (n is natural a number, n < m) column constitutes a group, in each group 'make the microlenses at the same pitch p; between the groups, the microlenses are separated by P + P / n; the control device 'controls the drive mechanism and In the first step, the microlens from the column is irradiated with the first laser light on the amorphous germanium film on the substrate to perform laser autumn; The illuminating secret is the same as the phase of the substrate, and the distance of the ηχρ distance is moved, and the micro-permeation from the 2xn column , The non-irradiated film as stone Xi 2nd laser beam on the substrate, for the purposes of laser annealing; after the same, most of the irradiation, followed by applying laser light line to p / n pitch region formed laser annealing. Further, the microlens array of the present invention is used in an apparatus for irradiating laser light, and m (m is a natural number) is arranged in a microlens array in which a plurality of microlenses are arranged, and the microlenses of the m columns are each The natural number 'n<m) column constitutes a group, and among the groups, the microlenses are arranged at the same pitch p; the microlenses are separated by p+p/n between the groups. [Effects of the Invention] s - According to the present invention, the irradiation system of the laser beam is opposed to the substrate by the irradiation system of the laser light between the microlens of the last row of the group and the microlens of the forefront. When the moving distance is ηχΡ, and the laser beam is irradiated, the laser light irradiation region of (n-1) columns may be provided between the pitches p of the microlens array. That is, the arrangement pitch of each group of the microlenses is P, and an irradiation area of n columns can be provided, so that the arrangement pitch of the irradiation areas can be made fine. Thereby, the microlens array can be constituted by a large pitch which is different from the predetermined area of the amorphous crystal film forming a predetermined region, and the laser can be annealed by the amorphous germanium film by a pitch smaller than the arrangement pitch of the microlens array. A small polycrystalline ruthenium film region is formed. [Embodiment] The following is a detailed description of the preferred embodiment of the present invention with reference to the attached drawings. FIG. 1 is a view showing a laser irradiation apparatus using a microlens 5. Annealing in Fig. 1 201143949, so that the predetermined area of the channel-shaped region is illuminated by the laser light. This is to use a micro-static crystallization to form a polycrystalline ruthenium film > a mirror array is irradiated onto the illuminator 6. ♦ The microlens 5 of the shooting and translating microlens 5 is used to illuminate the precursor 1 , for example, a quasi-molecular laser having a wavelength of a repeating period of a ubiquitous or mirror array system. The microlens 5 is arranged on the transparent substrate 4, and the light is incident on the thin film transistor to form a predetermined region, and the thin 6 is arranged in parallel with the 'microlens 5' to form a transistor. The distribution of the predetermined area is greater than or equal to a multiple of (for example, 2). In the embodiment, the gargle is a thin germanium transistor, and the channel region of the a-Si film is irradiated with laser light = a predetermined region to form a polycrystalline track region. Above the microlens 5, a microlens 5 is disposed so that the laser light is irradiated only to the channel to form a predetermined mask 3, and the body 6 is placed in the channel region. For example, in the case where a driving transistor for forming a halogen is used as a peripheral circuit of a liquid crystal display device, a gate electrode formed of a metal film of A1 or the like on a glass substrate is patterned by a gold plating. Thereafter, a gate insulating film formed entirely of a SiN film was formed by a low temperature plasma CVD method of 25 Å to 3 Å with a gas of decane and krypton: gas as a material. Thereafter, an a_Sh H film is formed on the gate insulating mold by, for example, plasma CVD. This ^_Si: Η film is formed by using a gas mixed with Shi Xiyuan and H2 gas as a raw material gas. The area on the gate electrode of the a-Si: ruthenium film is used as a channel to form a predetermined region, and one microlens 5 is disposed in each channel region, and only a predetermined region is irradiated with laser light and annealed. The channel forming region is polycrystallized to form a polysilicon channel region. Further, the microlenses 5 are arranged in a plurality of columns instead of one column, and in the present embodiment of Figs. 2 to 9, a microlens having three columns of three groups and nine columns in total is disposed. Fig. 2 is a plan view showing the arrangement of the microlenses 5 and the irradiation area of the laser light. 3 to FIG. 9 , the upper view of FIG. 4 shows a region 10 (a region subjected to annealing) and a plane arrangement of the microlens 5 for concentrating laser light on the amorphous film by a microlens; A view of the front side of the substrate illuminated with laser light. The light-shielding plate V of the microlens 5 is arranged in a total of nine columns of three groups of the light-shielding plate 3 above the wire 3 in a group of (4) light-shielding. In the first group group I, among the groups of the third group 13, the microlenses 5 are arranged at a constant pitch ρ. The 12 microlenses and the pupil lenses between the second group 12 and the third group 13 are separated by an interval of p + 1/3p. The entire surface of the glass substrate 20 has a gate potential 21, and an amorphous layer 22 is formed on the gate layer 21. Further, in the initial stage shown in Fig. 3, the mask and the light shielding plate 7 are disposed closer to each other than the upper surface of the glass substrate 20. > Thereafter, the state of the light shielding plate 7, the mask 3, and the microlens 5 is fixed to make the glass ff. The substrate is moved by a distance of three times the pitch P of the crane microlens, and then the light is irradiated with f, and the substrate is moved by a distance of three times the pitch p to irradiate the laser light. Next, the operation of the laser annealing apparatus of the present embodiment by the laser irradiation apparatus having the above configuration will be described. In addition, the following motion control driving mechanism and the control device for the action of the laser light generating source are controlled. The driving mechanism is to mount the ray finder including the reticle and the micro-rotation to the ground perpendicular to the column of the microlens. Move in the direction. As shown in Fig. 3, the opening portion of the light corresponds to each of the microlenses 5 on the transparent substrate 4, and the positional relationship with the microlens 5 is maintained in a predetermined state. The visor 7 is disposed above the other microlenses 5 except for the region above the microlens 5 on the front end side (the substrate 2() is divided, and after the laser is applied, as shown in FIG. 4, the glass substrate 20 is turned to the right in the figure. When the position of the glass substrate 20 is three times the distance of the movement pitch p, the width of the microlens 5 and the microlens 5 below the mask 3 are divided into three rows. In the amorphous ruthenium film 22, the region 10 concentrated by the microlens 5 having the three divisions of the pitch 升温 is heated by the laser light and solidified to crystallize the region 10. Thereby, the region of the three columns is 1〇1 polycrystalline stone film. The microlens 5 other than the microlens 5 of the three columns is not blocked by the light shielding plate 7 201143949 • is irradiated by laser light. As shown in Fig. 5, the glass substrate 20 is moved more, and at a time when the distance p is three times the distance, that is, after the start of the movement, the distance of 6p is moved by two points, and one laser beam is irradiated. Thus, the first light is emitted. The region where the microlens 5 of the group 11 and the microlens 5 of the second group U are condensed is subjected to laser annealing. In the step, the region 10 of the first group 11 irradiated by the laser light is stepped on the region 10 where the #1 group and the second group of microlenses 5 are irradiated with the laser light, and then the fire is applied. Since the first group and the second group are separated by a distance of P + 1/3P, as shown in Fig. 5 and Fig. 2, the front end portion of the glass substrate 20 is about 3 & In the portion of the width of about 3P, the laser annealing region 10 formed by the micromirror 5 of the second group irradiated with the second irradiation, and the laser annealing region formed by the second mirror 5 irradiated with the second irradiation 10, staggered by a distance of 1/3p. Among the areas 1G of the Yemen P column, there are only 3 columns, and the area 1G adjacent to 1/3P is formed for the first 丨 〇 1 。. 2G moves the 9th laser light after moving 9P distance 5 after the start of the movement. Thus, the laser light passes through all the microlenses of the i-th group if Zhao I12 and the third group 13 microlens. In the case where the front end of the glass substrate 20 is about 3P in width, the laser light irradiation of the first group of the first group and the laser light irradiation of the second group of the second group are shifted every 1/3P. Irradiation, with = In the laser annealing region of 9 columns and 3 columns, the laser annealing region is 1 〇. From the position of S about 3 至 to the position of about 6 距离, the irradiation of the microlens of one group of the lens and the second group of the third time As a result of the lens=shot, a total of six columns of laser annealing regions are formed. Next, as shown in Fig. 7, the glass substrate 20 is moved by 3 s s cover r. Thus, the glass substrate is "not/ Just enter the width of about 3P, this - remove the part of about 3P =, and receive the illumination of the laser light. In this step, ^ 5 people of the whole group of the thunder = U, the second group 12 and the third group 13; On the stone film 22, each region 10 is subjected to laser annealing. Thereby, for the portion of the 201143949 glass substrate 20 having a width of about 6P from the front end, the laser annealing regions 10 of 18 columns are arranged side by side at a distance of 1/3P; further, for the portion after the distance of the further 3P, the region 10 of the six columns The distance between 1/3P and 2/3P is side by side; further, about 3p away from the rear, the three rows of areas 10 are side by side with P. Then, in the same manner, when the glass substrate 10 is moved by a distance of 3 P, laser light is emitted, and all of the microlenses 5 from the first group 11 to the third group 13 are used to repeat the laser annealing. Thereby, as shown in Figs. 8 and 9, the area of the laser annealing region 10 which is arranged side by side at a distance of 1/3P will be enlarged. Finally, in the rear end portion of the glass substrate, the portion of the microlens 5 and the front end side of the mask 3 is shielded from the laser light by the other light shielding plate in a three-row manner, thereby stopping the irradiation of the laser light. In the figure, after the laser light from the microlenses 5 of the leftmost three rows is stopped, the laser light from the microlenses 5 of the third row is stopped, and then the glass substrate 20 is moved by 3P to perform the final laser light. Upon irradiation, the entire area of the amorphous germanium film is subjected to laser annealing. As described above, regardless of whether or not the arrangement pitch of the microlenses 5 is p, a polycrystalline germanium region 1〇 having a pitch of 丨/卯 is formed on the glass substrate 20. Thereby, the fine areas of the polycrystalline germanium can be formed by the finer pitch of the arrangement of the & lenses 5 . Further, the number of columns belonging to the same microlens as the distance between the groups is appropriately set, and by making the interval between the groups (P + P / n), the laser annealing region can be set to 1, that is, fine The formation pitch of the polysilicon regions is set to an arbitrary (p/n) regardless of the distance between the microlenses 5. [Industrial Applicability] According to the present invention, since a fine laser annealing region having a finer pitch can be formed by the arrangement pitch of the microlens arrays, miniaturization of the semiconductor device is possible, and the manufacture of the microlens array is further improved. Easy and extremely useful. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a laser irradiation apparatus. Fig. 2 is a schematic view showing the transition of the laser irradiation region. w Figure < 3 The upper diagram shows the area of the area where the microlens condenses the laser light on the amorphous ray (the area where the text is annealed) and the microlens 5; the lower figure shows the glass substrate 10 201143949 Front view of the laser light. Figure 4 is a diagram showing a step below the figure of Figure 3. Figure 5 is a diagram showing a step below in Figure 4. Figure 6 is a diagram showing a step below in Figure 5. Figure 7 is a diagram showing a step below in Figure 6. Figure 8 is a diagram showing a step below in Figure 7. Figure 9 is a diagram showing a step in the lower portion of Figure 8. [Description of main component symbols] 1 laser light source 2 lens group 3 photomask 4 transparent substrate 5 microlens 6 irradiated body 7 light shielding plate 10 region 11 group 1 (microlens) 12 group 2 (microlens) 13 Group 3 (microlens) 20 Glass substrate 21 Gate layer 22 Amorphous chopping film 30 Laser light P Pitch 11

Claims (1)

201143949 七、申請專利範圍： «種火方法’其使用—雷射光之照射裝置，該雷射光之 微透鏡陣列，於m(m為自然數)列配置有各列複數個之微透 =，光罩，具有與各微透鏡對應之開口部；雷射光之產生源；導 “邛，將來自此產生源之雷射光引導至該光罩與微透鏡 ;以及驅 將包含該鮮及微透_t射光之照射祕，與基板相 對地在與該微透鏡之列垂直之方向移動； 該雷射退火方法之特徵為： 忒m列之微透鏡，每n(n為自然數，n<m)列構成一群，於各 群之中，使微透鏡以同一間距P配列；各群相互之間，微透鏡以 Pa+P/n分隔；第1步驟中，自η列分之微透鏡，對於該基板上之非 Β曰矽膜照射第1次雷射光，以施行雷射退火；第2步驟中，在該 雷射光之照射系統與該基板相對地移動ηχρ距離之時點，自2χη $分之微透鏡，對於該基板上之非晶矽膜照射第2次雷射光，以 把行雷射退火，其後以同樣方式施行多數次之雷射光照射，而以 Ρ/η間距形成雷射退火區域。 2、一種雷射退火裝置，包含： 微透鏡陣列，於m(m為自然數)列配置有各列複數個之微透 H，光罩，具有與各微透鏡對應之開口部；雷射光之產生源；導 光部，將來自此產生源之雷射光引導至該光罩與微透鏡；驅動機 構，將包含該光罩及微透鏡的雷射光之照射系統，與基板相對地 在和該微透鏡之列垂直之方向移動；以及控制裝置，控制該驅動 機構之動作與該產生源之動作； 該雷射退火裝置之特徵為： 該m列之微透鏡’每n(n為自然數，n<m)列構成一群，於各 群之中，使微透鏡以同一間距P配列；各群相互之間，微透鏡以 P+P/n分隔； 該控制裝置，控制該驅動機構及該產生源，於第丨步驟中， 自η列分之微透鏡，對於該基板上之非晶矽膜照射第1次雷射光， 201143949 =2===中自=，之=系統與該基 ，方式施灯夕數久之雷射光照射，而以P/n間距形成雷射退火區 域。 、一種微透鏡陣列’使用於雷射光之照射装置，配置有m(m為 自然數)列而各列有複數個之微透鏡，其特徵為： 該m列之微透鏡’每n(n為自然數’ n<m)列構成一群，於各 群之中，使微透鏡以同一間距p配列；各群相互之間，微透鏡以 P+P/n分隔。 八、圖式：201143949 VII, the scope of application for patents: «The method of breeding fire' uses - the laser light irradiation device, the laser lens microlens array, in the m (m is a natural number) column is arranged with a plurality of columns of micro-transparent =, light a cover having an opening corresponding to each microlens; a source of laser light; a guide, "guide laser light from the source is directed to the mask and the microlens; and the drive includes the fresh and micro-transparent_t The illumination of the light is moved in a direction perpendicular to the column of the microlenses opposite to the substrate; the laser annealing method is characterized by: a microlens of 忒m columns, every n (n is a natural number, n < m) column Forming a group, in each group, arranging the microlenses at the same pitch P; between the groups, the microlenses are separated by Pa+P/n; in the first step, the microlenses are divided from the η column, for the substrate The first non-decimated film irradiates the first laser light to perform laser annealing; in the second step, the microlens from 2χη $ points when the irradiation system of the laser light moves relative to the substrate by ηχρ distance Irradiating the second laser light on the amorphous germanium film on the substrate to Laser annealing is performed, after which most of the laser light irradiation is performed in the same manner, and the laser annealing region is formed at a Ρ/η pitch. 2. A laser annealing device comprising: a microlens array, m (m is natural) a plurality of rows of micro-transparent H, a mask having an opening corresponding to each microlens; a source of laser light; and a light guiding portion for guiding laser light from the source to the mask And a microlens; a driving mechanism that moves the illumination system including the reticle and the microlens to be perpendicular to the substrate in a direction perpendicular to the column of the microlens; and a control device that controls the operation of the driving mechanism The action of generating the source; the laser annealing device is characterized in that: the microlens of the m columns 'n every n (n is a natural number, n < m) column constitutes a group, among the groups, the microlenses are at the same pitch P Arranged between the groups; the microlenses are separated by P+P/n; the control device controls the driving mechanism and the generating source, and in the second step, the η column is divided into microlenses for the substrate Amorphous germanium film irradiates the first laser light, 2 01143949 =2===中中=,==System and the base, the method is to irradiate the laser light for a long time, and the laser annealing region is formed at a P/n pitch. A microlens array is used for laser light. The illuminating device is provided with a m (m is a natural number) column and a plurality of microlenses in each of the columns, wherein the m-column microlens 'a n (n is a natural number 'n<m) column constitutes a group, In each group, the microlenses are arranged at the same pitch p; between the groups, the microlenses are separated by P+P/n.
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