JP5489844B2 - 電子装置 - Google Patents

電子装置 Download PDF

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Publication number
JP5489844B2
JP5489844B2 JP2010102597A JP2010102597A JP5489844B2 JP 5489844 B2 JP5489844 B2 JP 5489844B2 JP 2010102597 A JP2010102597 A JP 2010102597A JP 2010102597 A JP2010102597 A JP 2010102597A JP 5489844 B2 JP5489844 B2 JP 5489844B2
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Japan
Prior art keywords
electronic device
resistance value
specific resistance
common wiring
light
Prior art date
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Active
Application number
JP2010102597A
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English (en)
Japanese (ja)
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JP2011232539A (ja
Inventor
康由 三島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2010102597A priority Critical patent/JP5489844B2/ja
Priority to TW100114427A priority patent/TWI468824B/zh
Priority to KR1020110038966A priority patent/KR101446829B1/ko
Publication of JP2011232539A publication Critical patent/JP2011232539A/ja
Application granted granted Critical
Publication of JP5489844B2 publication Critical patent/JP5489844B2/ja
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Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Liquid Crystal (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2010102597A 2010-04-27 2010-04-27 電子装置 Active JP5489844B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010102597A JP5489844B2 (ja) 2010-04-27 2010-04-27 電子装置
TW100114427A TWI468824B (zh) 2010-04-27 2011-04-26 矩陣狀配置複數個開關元件的電子裝置及其製造方法
KR1020110038966A KR101446829B1 (ko) 2010-04-27 2011-04-26 전자 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010102597A JP5489844B2 (ja) 2010-04-27 2010-04-27 電子装置

Publications (2)

Publication Number Publication Date
JP2011232539A JP2011232539A (ja) 2011-11-17
JP5489844B2 true JP5489844B2 (ja) 2014-05-14

Family

ID=45321902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010102597A Active JP5489844B2 (ja) 2010-04-27 2010-04-27 電子装置

Country Status (3)

Country Link
JP (1) JP5489844B2 (ko)
KR (1) KR101446829B1 (ko)
TW (1) TWI468824B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102000738B1 (ko) * 2013-01-28 2019-07-23 삼성디스플레이 주식회사 정전기 방지 회로 및 이를 포함하는 표시 장치
US9964799B2 (en) * 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
WO2017150617A1 (ja) * 2016-03-02 2017-09-08 国立研究開発法人産業技術総合研究所 半導体－絶縁体可逆変化薄膜及びその製造方法
CN106094272B (zh) * 2016-06-22 2019-06-07 京东方科技集团股份有限公司 一种显示基板、其制作方法及显示装置
CN107490890B (zh) * 2017-09-26 2019-09-20 武汉华星光电技术有限公司 显示基板、显示面板以及显示设备
KR102181003B1 (ko) * 2020-02-07 2020-11-20 삼성디스플레이 주식회사 정전기 방지 회로 및 이를 포함하는 표시 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2766442B2 (ja) * 1992-06-03 1998-06-18 株式会社フロンテック マトリクス配線基板
JPH08220557A (ja) * 1995-02-09 1996-08-30 Mitsubishi Electric Corp 液晶表示装置、その検査方法及び静電気防止方法
JP3640224B2 (ja) * 1996-06-25 2005-04-20 株式会社半導体エネルギー研究所 液晶表示パネル
JP3628125B2 (ja) * 1996-09-24 2005-03-09 株式会社東芝 アクティブマトリクス基板及びアクティブマトリクス型液晶表示装置
JP2006003552A (ja) * 2004-06-16 2006-01-05 Mitsubishi Chemicals Corp 発光装置
JP2009099847A (ja) * 2007-10-18 2009-05-07 Canon Inc 薄膜トランジスタとその製造方法及び表示装置
JP5268132B2 (ja) * 2007-10-30 2013-08-21 富士フイルム株式会社 酸化物半導体素子とその製造方法、薄膜センサおよび電気光学装置
CN102160183B (zh) * 2008-09-17 2014-08-06 夏普株式会社 半导体装置

Also Published As

Publication number Publication date
TW201229639A (en) 2012-07-16
JP2011232539A (ja) 2011-11-17
TWI468824B (zh) 2015-01-11
KR20110119573A (ko) 2011-11-02
KR101446829B1 (ko) 2014-10-01

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