JP5710904B2 - X線検出器 - Google Patents
X線検出器 Download PDFInfo
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- JP5710904B2 JP5710904B2 JP2010163256A JP2010163256A JP5710904B2 JP 5710904 B2 JP5710904 B2 JP 5710904B2 JP 2010163256 A JP2010163256 A JP 2010163256A JP 2010163256 A JP2010163256 A JP 2010163256A JP 5710904 B2 JP5710904 B2 JP 5710904B2
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- 239000010410 layer Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 45
- 239000011241 protective layer Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000001514 detection method Methods 0.000 description 35
- 239000010408 film Substances 0.000 description 23
- 239000010409 thin film Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Description
40 ゲート駆動部
50 受信信号検出部
60 バイアス電源供給部
100 X線検出器
121 ゲート線
124 ゲート電極
140 ゲート絶縁膜
171 データ線
173 ソース電極
175 ドレイン電極
177 第1下部電極
179 保護層
180 保護膜
182 第2下部電極
230 シンチレータ
250 ダイオード用半導体層
251 N型半導体
252 真性半導体
253 P型半導体
Claims (9)
- 第1基板;
前記第1基板上に形成されるゲート電極;
前記ゲート電極を覆うように前記ゲート電極及び前記第1基板上に形成されるゲート絶縁膜;
前記ゲート絶縁膜の一部分に積層されて形成される半導体層;
前記半導体層の第1部分を覆うソース電極を含むデータ線;
前記ソース電極に対向するドレイン電極を含み、前記半導体層の前記第1部分と異なる第2部分及び前記ゲート絶縁膜の上部に前記ドレイン電極から延びて形成される第1下部電極;
前記ドレイン電極の上部に前記ドレイン電極に隣接して形成される保護層;
前記保護層及び前記保護層が形成されない前記第1下部電極の上部に形成される第2下部電極;
前記第2下部電極の上部に形成されるダイオード用半導体層;及び
前記ダイオード用半導体層の上部に形成される上部電極を含み、
前記保護層は、前記第2下部電極の下部に前記第2下部電極に隣接して形成され、
前記第2下部電極は、前記ゲート電極と重畳しないように形成されるX線検出器。 - 前記保護層は、
前記ドレイン電極、及び前記ドレイン電極と接続する第1下部電極の一部分の上部に形成される、請求項1に記載のX線検出器。 - 前記上部電極の上部に形成される保護膜をさらに含む、請求項1に記載のX線検出器。
- 外部から入射するX線を可視光線に変換するシンチレータ層をさらに含む、請求項3に記載のX線検出器。
- 第1基板;
前記第1基板上に形成されるゲート電極;
前記ゲート電極を覆うように前記ゲート電極及び前記第1基板上に形成されるゲート絶縁膜;
前記ゲート絶縁膜の一部分に積層されて形成される半導体層;
前記半導体層の第1部分を覆うソース電極を含むデータ線;
前記ソース電極に対向するドレイン電極を含み、前記半導体層の前記第1部分と異なる第2部分及び前記ゲート絶縁膜の上部に前記ドレイン電極から延びて形成される第1下部電極;
前記ドレイン電極の上部に前記ドレイン電極に隣接して形成される保護層;
前記保護層及び前記保護層が形成されない前記第1下部電極の上部に形成される第2下部電極;
前記第2下部電極の上部に形成されるダイオード用半導体層;及び
前記ダイオード用半導体層の上部に形成される上部電極を含み、
前記保護層は、前記第2下部電極の下部に前記第2下部電極に隣接して形成され、
前記第2下部電極は前記ゲート電極と重畳して形成される、X線検出器。 - 第1下部電極及び前記ダイオード用半導体層は前記ゲート電極と重畳して形成される、請求項5に記載のX線検出器。
- 前記保護層は、
前記ドレイン電極、及び前記ドレイン電極と接続する第1下部電極の一部分の上部に形成される、請求項5に記載のX線検出器。 - 前記上部電極の上部に形成される保護膜をさらに含む、請求項5に記載のX線検出器。
- 外部から入射するX線を可視光線に変換するシンチレータ層をさらに含む、請求項5に記載のX線検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090127307A KR101084265B1 (ko) | 2009-12-18 | 2009-12-18 | 엑스레이 검출기 |
KR10-2009-0127307 | 2009-12-18 |
Publications (2)
Publication Number | Publication Date |
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JP2011129868A JP2011129868A (ja) | 2011-06-30 |
JP5710904B2 true JP5710904B2 (ja) | 2015-04-30 |
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JP2010163256A Active JP5710904B2 (ja) | 2009-12-18 | 2010-07-20 | X線検出器 |
Country Status (3)
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US (1) | US8299465B2 (ja) |
JP (1) | JP5710904B2 (ja) |
KR (1) | KR101084265B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101736321B1 (ko) | 2010-12-22 | 2017-05-17 | 삼성디스플레이 주식회사 | 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 엑스레이 검출기 |
TW201438204A (zh) | 2013-03-19 | 2014-10-01 | Univ Nat Chiao Tung | 平板型x光偵測器的tft-pin陣列基板及組裝結構 |
CN104393092A (zh) * | 2014-11-26 | 2015-03-04 | 京东方科技集团股份有限公司 | 光电二极管及其制备方法、x射线探测器基板及其制备方法 |
JP6704599B2 (ja) * | 2015-04-28 | 2020-06-03 | 天馬微電子有限公司 | 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置 |
EP3261131B1 (en) * | 2016-06-21 | 2022-06-22 | Nokia Technologies Oy | An apparatus for sensing electromagnetic radiation |
JP7449264B2 (ja) * | 2021-08-18 | 2024-03-13 | 株式会社東芝 | 放射線検出器 |
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KR100720088B1 (ko) | 2000-07-31 | 2007-05-18 | 삼성전자주식회사 | 엑스레이 검출기용 박막 트랜지스터 어레이 기판 |
KR100796754B1 (ko) | 2001-08-23 | 2008-01-22 | 삼성전자주식회사 | X-ray 검출기용 박막 트랜지스터 어레이 기판 및 그제조 방법 |
KR100956338B1 (ko) * | 2002-12-11 | 2010-05-06 | 삼성전자주식회사 | X-ray 검출기용 박막 트랜지스터 어레이 기판 |
JP2005116543A (ja) * | 2003-10-02 | 2005-04-28 | Canon Inc | 撮像装置とその製造方法、放射線撮像装置及び放射線撮像システム |
KR20080102488A (ko) | 2007-05-21 | 2008-11-26 | 삼성전자주식회사 | 엑스레이 검출기용 박막 트랜지스터 어레이 기판 |
KR101350795B1 (ko) | 2007-06-11 | 2014-01-10 | 삼성디스플레이 주식회사 | 엑스레이 검출기용 박막 트랜지스터 어레이 |
KR101352359B1 (ko) * | 2007-07-23 | 2014-01-23 | 삼성디스플레이 주식회사 | 엑스선 검출기 및 그 제조 방법 |
JP2009059975A (ja) | 2007-09-03 | 2009-03-19 | Mitsubishi Electric Corp | フォトセンサーおよびx線撮像装置 |
KR101393633B1 (ko) * | 2007-10-31 | 2014-05-09 | 삼성디스플레이 주식회사 | 엑스레이 검출 패널, 엑스레이 검출기 및 엑스레이검출기의 구동 방법 |
JP5185013B2 (ja) * | 2008-01-29 | 2013-04-17 | 富士フイルム株式会社 | 電磁波検出素子 |
KR101441630B1 (ko) | 2008-02-12 | 2014-09-23 | 삼성디스플레이 주식회사 | 엑스레이 검출기 및 이의 제조방법 |
JP2009295908A (ja) * | 2008-06-09 | 2009-12-17 | Mitsubishi Electric Corp | フォトセンサ、及びその製造方法 |
KR101469042B1 (ko) * | 2008-08-29 | 2014-12-05 | 삼성디스플레이 주식회사 | 엑스레이 검출 패널 및 엑스레이 검출기 |
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2009
- 2009-12-18 KR KR1020090127307A patent/KR101084265B1/ko active IP Right Grant
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2010
- 2010-07-20 JP JP2010163256A patent/JP5710904B2/ja active Active
- 2010-12-17 US US12/972,393 patent/US8299465B2/en active Active
Also Published As
Publication number | Publication date |
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US20110147741A1 (en) | 2011-06-23 |
KR20110070473A (ko) | 2011-06-24 |
JP2011129868A (ja) | 2011-06-30 |
KR101084265B1 (ko) | 2011-11-17 |
US8299465B2 (en) | 2012-10-30 |
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