JP5489724B2 - エッチング中のラインエンドショートニングの低減 - Google Patents

エッチング中のラインエンドショートニングの低減 Download PDF

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Publication number
JP5489724B2
JP5489724B2 JP2009545644A JP2009545644A JP5489724B2 JP 5489724 B2 JP5489724 B2 JP 5489724B2 JP 2009545644 A JP2009545644 A JP 2009545644A JP 2009545644 A JP2009545644 A JP 2009545644A JP 5489724 B2 JP5489724 B2 JP 5489724B2
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Japan
Prior art keywords
gas
photoresist
line
trimming
layer
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Expired - Fee Related
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JP2009545644A
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Japanese (ja)
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JP2010516059A (ja
JP2010516059A5 (https=
Inventor
山口 アダムス・葉子
コータ・ゴウリ
リン・フランク・ワイ．
チョン・キングア
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009545644A 2007-01-10 2008-01-08 エッチング中のラインエンドショートニングの低減 Expired - Fee Related JP5489724B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/621,902 US7491343B2 (en) 2006-09-14 2007-01-10 Line end shortening reduction during etch
US11/621,902 2007-01-10
PCT/US2008/050524 WO2008086361A1 (en) 2007-01-10 2008-01-08 Line end shortening reduction during etch

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013086806A Division JP2013191854A (ja) 2007-01-10 2013-04-17 エッチング中のラインエンドショートニングの低減

Publications (3)

Publication Number Publication Date
JP2010516059A JP2010516059A (ja) 2010-05-13
JP2010516059A5 JP2010516059A5 (https=) 2011-02-10
JP5489724B2 true JP5489724B2 (ja) 2014-05-14

Family

ID=39615674

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009545644A Expired - Fee Related JP5489724B2 (ja) 2007-01-10 2008-01-08 エッチング中のラインエンドショートニングの低減
JP2013086806A Pending JP2013191854A (ja) 2007-01-10 2013-04-17 エッチング中のラインエンドショートニングの低減

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013086806A Pending JP2013191854A (ja) 2007-01-10 2013-04-17 エッチング中のラインエンドショートニングの低減

Country Status (6)

Country Link
US (1) US7491343B2 (https=)
JP (2) JP5489724B2 (https=)
KR (1) KR101433987B1 (https=)
CN (1) CN101584027B (https=)
TW (1) TWI409875B (https=)
WO (1) WO2008086361A1 (https=)

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KR100840652B1 (ko) * 2006-12-29 2008-06-24 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
JP2010161162A (ja) 2009-01-07 2010-07-22 Tokyo Electron Ltd 微細パターンの形成方法
WO2010141257A2 (en) * 2009-06-03 2010-12-09 Applied Materials, Inc. Method and apparatus for etching
US8394723B2 (en) * 2010-01-07 2013-03-12 Lam Research Corporation Aspect ratio adjustment of mask pattern using trimming to alter geometry of photoresist features
US8815747B2 (en) * 2010-06-03 2014-08-26 Micron Technology, Inc. Methods of forming patterns on substrates
CN102468168B (zh) * 2010-11-01 2014-06-04 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
JP6151215B2 (ja) * 2014-05-15 2017-06-21 東京エレクトロン株式会社 プラズマエッチング方法
US10049892B2 (en) * 2015-05-07 2018-08-14 Tokyo Electron Limited Method for processing photoresist materials and structures
KR20180113585A (ko) * 2016-03-04 2018-10-16 도쿄엘렉트론가부시키가이샤 통합 계획의 다양한 스테이지 동안의 패터닝을 위한 트림 방법
JP6458156B2 (ja) * 2016-03-28 2019-01-23 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10727045B2 (en) * 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device
JP2019121750A (ja) * 2018-01-11 2019-07-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7195113B2 (ja) 2018-11-07 2022-12-23 東京エレクトロン株式会社 処理方法及び基板処理装置
JP7588518B2 (ja) 2021-02-01 2024-11-22 東京エレクトロン株式会社 温度制御方法及び基板処理装置

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US5959325A (en) 1997-08-21 1999-09-28 International Business Machines Corporation Method for forming cornered images on a substrate and photomask formed thereby
JP4153606B2 (ja) 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
KR100447263B1 (ko) * 1999-12-30 2004-09-07 주식회사 하이닉스반도체 식각 폴리머를 이용한 반도체 소자의 제조방법
JP2001308076A (ja) 2000-04-27 2001-11-02 Nec Corp 半導体装置の製造方法
US6451705B1 (en) 2000-08-31 2002-09-17 Micron Technology, Inc. Self-aligned PECVD etch mask
US6653231B2 (en) 2001-03-28 2003-11-25 Advanced Micro Devices, Inc. Process for reducing the critical dimensions of integrated circuit device features
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US7125496B2 (en) 2001-06-28 2006-10-24 Hynix Semiconductor Inc. Etching method using photoresist etch barrier
CN1316564C (zh) * 2002-04-11 2007-05-16 联华电子股份有限公司 复合光致抗蚀剂层结构
JP3866155B2 (ja) * 2002-05-17 2007-01-10 株式会社ルネサステクノロジ 半導体装置およびその製造方法
KR100475080B1 (ko) 2002-07-09 2005-03-10 삼성전자주식회사 Ｓｉ-콘테이닝 수용성 폴리머를 이용한 레지스트 패턴형성방법 및 반도체 소자의 제조방법
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Also Published As

Publication number Publication date
JP2013191854A (ja) 2013-09-26
KR20090107055A (ko) 2009-10-12
KR101433987B1 (ko) 2014-08-25
CN101584027A (zh) 2009-11-18
WO2008086361A1 (en) 2008-07-17
US20080087639A1 (en) 2008-04-17
TWI409875B (zh) 2013-09-21
US7491343B2 (en) 2009-02-17
TW200845184A (en) 2008-11-16
JP2010516059A (ja) 2010-05-13
CN101584027B (zh) 2011-07-13

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