TWI409875B - 蝕刻進行中之線端縮短的減小 - Google Patents

蝕刻進行中之線端縮短的減小 Download PDF

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Publication number
TWI409875B
TWI409875B TW097100625A TW97100625A TWI409875B TW I409875 B TWI409875 B TW I409875B TW 097100625 A TW097100625 A TW 097100625A TW 97100625 A TW97100625 A TW 97100625A TW I409875 B TWI409875 B TW I409875B
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TW
Taiwan
Prior art keywords
gas
line
photoresist
feature
etching
Prior art date
Application number
TW097100625A
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English (en)
Chinese (zh)
Other versions
TW200845184A (en
Inventor
山口洋子亞當斯
柯塔 葛瑞
林 法蘭克Ｙ
鍾青華
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW200845184A publication Critical patent/TW200845184A/zh
Application granted granted Critical
Publication of TWI409875B publication Critical patent/TWI409875B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW097100625A 2007-01-10 2008-01-07 蝕刻進行中之線端縮短的減小 TWI409875B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/621,902 US7491343B2 (en) 2006-09-14 2007-01-10 Line end shortening reduction during etch

Publications (2)

Publication Number Publication Date
TW200845184A TW200845184A (en) 2008-11-16
TWI409875B true TWI409875B (zh) 2013-09-21

Family

ID=39615674

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097100625A TWI409875B (zh) 2007-01-10 2008-01-07 蝕刻進行中之線端縮短的減小

Country Status (6)

Country Link
US (1) US7491343B2 (https=)
JP (2) JP5489724B2 (https=)
KR (1) KR101433987B1 (https=)
CN (1) CN101584027B (https=)
TW (1) TWI409875B (https=)
WO (1) WO2008086361A1 (https=)

Cited By (1)

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TWI681443B (zh) * 2016-03-04 2020-01-01 東京威力科創股份有限公司 整合架構之各種階段期間用於圖案化之修整方法

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JP2010161162A (ja) 2009-01-07 2010-07-22 Tokyo Electron Ltd 微細パターンの形成方法
WO2010141257A2 (en) * 2009-06-03 2010-12-09 Applied Materials, Inc. Method and apparatus for etching
US8394723B2 (en) * 2010-01-07 2013-03-12 Lam Research Corporation Aspect ratio adjustment of mask pattern using trimming to alter geometry of photoresist features
US8815747B2 (en) * 2010-06-03 2014-08-26 Micron Technology, Inc. Methods of forming patterns on substrates
CN102468168B (zh) * 2010-11-01 2014-06-04 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
JP6151215B2 (ja) * 2014-05-15 2017-06-21 東京エレクトロン株式会社 プラズマエッチング方法
US10049892B2 (en) * 2015-05-07 2018-08-14 Tokyo Electron Limited Method for processing photoresist materials and structures
JP6458156B2 (ja) * 2016-03-28 2019-01-23 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10727045B2 (en) * 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device
JP2019121750A (ja) * 2018-01-11 2019-07-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7195113B2 (ja) 2018-11-07 2022-12-23 東京エレクトロン株式会社 処理方法及び基板処理装置
JP7588518B2 (ja) 2021-02-01 2024-11-22 東京エレクトロン株式会社 温度制御方法及び基板処理装置

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US20040266134A1 (en) * 2002-10-31 2004-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Novel approach to improve line end shortening
US6916594B2 (en) * 2002-12-30 2005-07-12 Hynix Semiconductor Inc. Overcoating composition for photoresist and method for forming photoresist pattern using the same
US6946400B2 (en) * 2002-12-24 2005-09-20 Macronix International Co., Ltd. Patterning method for fabricating integrated circuit
US20060154185A1 (en) * 2005-01-11 2006-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a finely patterned resist

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KR100447263B1 (ko) * 1999-12-30 2004-09-07 주식회사 하이닉스반도체 식각 폴리머를 이용한 반도체 소자의 제조방법
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US20040009436A1 (en) * 2002-07-09 2004-01-15 Samsung Electronics Co., Ltd. Methods for forming resist pattern and fabricating semiconductor device using Si-containing water-soluble polymer
US20040266134A1 (en) * 2002-10-31 2004-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Novel approach to improve line end shortening
US20050191832A1 (en) * 2002-10-31 2005-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Novel approach to improve line end shortening
US6946400B2 (en) * 2002-12-24 2005-09-20 Macronix International Co., Ltd. Patterning method for fabricating integrated circuit
US6916594B2 (en) * 2002-12-30 2005-07-12 Hynix Semiconductor Inc. Overcoating composition for photoresist and method for forming photoresist pattern using the same
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI681443B (zh) * 2016-03-04 2020-01-01 東京威力科創股份有限公司 整合架構之各種階段期間用於圖案化之修整方法

Also Published As

Publication number Publication date
JP2013191854A (ja) 2013-09-26
JP5489724B2 (ja) 2014-05-14
KR20090107055A (ko) 2009-10-12
KR101433987B1 (ko) 2014-08-25
CN101584027A (zh) 2009-11-18
WO2008086361A1 (en) 2008-07-17
US20080087639A1 (en) 2008-04-17
US7491343B2 (en) 2009-02-17
TW200845184A (en) 2008-11-16
JP2010516059A (ja) 2010-05-13
CN101584027B (zh) 2011-07-13

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