CN101584027B - 减少刻蚀过程中的线路末端缩短 - Google Patents

减少刻蚀过程中的线路末端缩短 Download PDF

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Publication number
CN101584027B
CN101584027B CN2008800020667A CN200880002066A CN101584027B CN 101584027 B CN101584027 B CN 101584027B CN 2008800020667 A CN2008800020667 A CN 2008800020667A CN 200880002066 A CN200880002066 A CN 200880002066A CN 101584027 B CN101584027 B CN 101584027B
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China
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layer
polymeric layer
deposition gases
deposition
gas
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Expired - Fee Related
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CN2008800020667A
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English (en)
Chinese (zh)
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CN101584027A (zh
Inventor
山口叶子
高尔·科塔
弗兰克·Y·琳
钟青华
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2008800020667A 2007-01-10 2008-01-08 减少刻蚀过程中的线路末端缩短 Expired - Fee Related CN101584027B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/621,902 US7491343B2 (en) 2006-09-14 2007-01-10 Line end shortening reduction during etch
US11/621,902 2007-01-10
PCT/US2008/050524 WO2008086361A1 (en) 2007-01-10 2008-01-08 Line end shortening reduction during etch

Publications (2)

Publication Number Publication Date
CN101584027A CN101584027A (zh) 2009-11-18
CN101584027B true CN101584027B (zh) 2011-07-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800020667A Expired - Fee Related CN101584027B (zh) 2007-01-10 2008-01-08 减少刻蚀过程中的线路末端缩短

Country Status (6)

Country Link
US (1) US7491343B2 (https=)
JP (2) JP5489724B2 (https=)
KR (1) KR101433987B1 (https=)
CN (1) CN101584027B (https=)
TW (1) TWI409875B (https=)
WO (1) WO2008086361A1 (https=)

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JP2010161162A (ja) 2009-01-07 2010-07-22 Tokyo Electron Ltd 微細パターンの形成方法
WO2010141257A2 (en) * 2009-06-03 2010-12-09 Applied Materials, Inc. Method and apparatus for etching
US8394723B2 (en) * 2010-01-07 2013-03-12 Lam Research Corporation Aspect ratio adjustment of mask pattern using trimming to alter geometry of photoresist features
US8815747B2 (en) * 2010-06-03 2014-08-26 Micron Technology, Inc. Methods of forming patterns on substrates
CN102468168B (zh) * 2010-11-01 2014-06-04 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
JP6151215B2 (ja) * 2014-05-15 2017-06-21 東京エレクトロン株式会社 プラズマエッチング方法
US10049892B2 (en) * 2015-05-07 2018-08-14 Tokyo Electron Limited Method for processing photoresist materials and structures
KR20180113585A (ko) * 2016-03-04 2018-10-16 도쿄엘렉트론가부시키가이샤 통합 계획의 다양한 스테이지 동안의 패터닝을 위한 트림 방법
JP6458156B2 (ja) * 2016-03-28 2019-01-23 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10727045B2 (en) * 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device
JP2019121750A (ja) * 2018-01-11 2019-07-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7195113B2 (ja) 2018-11-07 2022-12-23 東京エレクトロン株式会社 処理方法及び基板処理装置
JP7588518B2 (ja) 2021-02-01 2024-11-22 東京エレクトロン株式会社 温度制御方法及び基板処理装置

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CN1577766A (zh) * 2003-07-09 2005-02-09 富士通株式会社 半导体器件制造方法和蚀刻系统
CN1717778A (zh) * 2003-03-31 2006-01-04 东京毅力科创株式会社 用于多层光致抗蚀剂干式显影的方法和装置
CN1722380A (zh) * 2004-07-14 2006-01-18 中芯国际集成电路制造(上海)有限公司 改善蚀刻后光刻胶残余的半导体器件制造方法
CN1761036A (zh) * 2004-10-12 2006-04-19 海力士半导体有限公司 利用钨作为牺牲硬掩膜制造半导体器件的方法
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JP4153606B2 (ja) 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
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CN1450595A (zh) * 2002-04-11 2003-10-22 联华电子股份有限公司 复合光致抗蚀剂层结构
CN1717778A (zh) * 2003-03-31 2006-01-04 东京毅力科创株式会社 用于多层光致抗蚀剂干式显影的方法和装置
CN1577766A (zh) * 2003-07-09 2005-02-09 富士通株式会社 半导体器件制造方法和蚀刻系统
CN1722380A (zh) * 2004-07-14 2006-01-18 中芯国际集成电路制造(上海)有限公司 改善蚀刻后光刻胶残余的半导体器件制造方法
CN1761036A (zh) * 2004-10-12 2006-04-19 海力士半导体有限公司 利用钨作为牺牲硬掩膜制造半导体器件的方法
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Also Published As

Publication number Publication date
JP2013191854A (ja) 2013-09-26
JP5489724B2 (ja) 2014-05-14
KR20090107055A (ko) 2009-10-12
KR101433987B1 (ko) 2014-08-25
CN101584027A (zh) 2009-11-18
WO2008086361A1 (en) 2008-07-17
US20080087639A1 (en) 2008-04-17
TWI409875B (zh) 2013-09-21
US7491343B2 (en) 2009-02-17
TW200845184A (en) 2008-11-16
JP2010516059A (ja) 2010-05-13

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