JP5468478B2 - 固体撮像装置の製造方法および固体撮像装置 - Google Patents
固体撮像装置の製造方法および固体撮像装置 Download PDFInfo
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- JP5468478B2 JP5468478B2 JP2010149619A JP2010149619A JP5468478B2 JP 5468478 B2 JP5468478 B2 JP 5468478B2 JP 2010149619 A JP2010149619 A JP 2010149619A JP 2010149619 A JP2010149619 A JP 2010149619A JP 5468478 B2 JP5468478 B2 JP 5468478B2
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- 238000003384 imaging method Methods 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000010410 layer Substances 0.000 claims description 79
- 239000011229 interlayer Substances 0.000 claims description 39
- 238000002161 passivation Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 28
- 238000000034 method Methods 0.000 description 26
- 238000002834 transmittance Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
12・・・ウェル
13・・・フォトダイオード
13−1・・・N+型のフォトダイオード層
13−2・・・P+型のフォトダイオード層
14・・・N+型の不純物層
15・・・ゲート酸化膜
16・・・反射防止膜
17・・・ゲート電極
18・・・第1の層間絶縁膜
19・・・第1のメタル配線
19−1・・・Al層
19−2・・・バリアメタル層
20・・・第2の層間絶縁膜
21・・・第2のメタル配線
21−1・・・Al層
21−2・・・バリアメタル層
22・・・パッシベーション膜
23・・・微小突起
24・・・電極パッド
25・・・第1のレジスト層
25A・・・開口部
26・・・開口部
26−1・・・第1の開口部
26・・・第2の開口部
27・・・第2のレジスト層
28・・・開口部
29・・・リップル
Claims (4)
- フォトダイオードおよびこのフォトダイオードとは離間して形成された不純物層を備えた半導体基板の表面のうち、前記不純物層上を含み、前記フォトダイオード上を除く前記半導体基板の表面上に、絶縁膜を介してゲート電極を形成する工程と、
このゲート電極を含む前記絶縁膜上に、層間絶縁膜を、その表面が平坦になるように形成する工程と、
この表面が平坦化された前記層間絶縁膜の表面に、配線を形成する工程と、
この配線を含む前記層間絶縁膜上に、パッシベーション膜を形成する工程と、
前記配線間の前記パッシベーション膜上に複数の第1の開口部を有し、前記配線上の前記パッシベーション膜上に第2の開口部を有するレジスト層を、前記パッシベーション膜上に形成する工程と、
前記レジスト層をマスクとして用いて、前記パッシベーション膜をエッチングし、前記第1の開口部に微小突起を形成する工程と、
このエッチング工程によって前記配線上の前記パッシベーション膜に形成された開口部に、前記配線に接続されるように電極パッドを形成する工程と、
を具備することを特徴とする固体撮像装置の製造方法。 - 前記エッチング工程は、前記パッシベーション膜をウエットエッチングする工程であることを特徴とする請求項1に記載の固体撮像装置の製造方法。
- カラーフィルタを具備しない固体撮像装置であって、
半導体基板の表面に形成されたフォトダイオードと、
前記半導体基板の表面において、前記フォトダイオードとは離間して形成された不純物層と、
この不純物層を含み、前記不純物層と前記フォトダイオードとの間の前記半導体基板の表面上に、絶縁膜を介して形成されたゲート電極と、
このゲート電極を含む前記絶縁膜上に、表面が平坦になるように形成された層間絶縁膜と、
この層間絶縁膜の表面のうち、前記フォトダイオードの上方を除く領域に形成された配線と、
この配線上に形成されたパッシベーション膜と、
前記配線間から露出する前記層間絶縁膜上であり、かつ前記フォトダイオードの上方のみに形成された複数の微小突起と、
前記配線に接続されるように前記配線上に形成された電極パッドと、
を具備することを特徴とする固体撮像装置。 - 前記半導体基板若しくは前記絶縁膜は、水素を含有した半導体基板若しくは絶縁膜であることを特徴とする請求項3に記載の固体撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010149619A JP5468478B2 (ja) | 2010-06-30 | 2010-06-30 | 固体撮像装置の製造方法および固体撮像装置 |
US13/172,037 US8530994B2 (en) | 2010-06-30 | 2011-06-29 | Method for producing solid state imaging device and solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010149619A JP5468478B2 (ja) | 2010-06-30 | 2010-06-30 | 固体撮像装置の製造方法および固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012015284A JP2012015284A (ja) | 2012-01-19 |
JP5468478B2 true JP5468478B2 (ja) | 2014-04-09 |
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JP2010149619A Expired - Fee Related JP5468478B2 (ja) | 2010-06-30 | 2010-06-30 | 固体撮像装置の製造方法および固体撮像装置 |
Country Status (2)
Country | Link |
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US (1) | US8530994B2 (ja) |
JP (1) | JP5468478B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10825852B2 (en) | 2018-08-13 | 2020-11-03 | Kabushiki Kaisha Toshiba | Solid state imaging device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG140473A1 (en) * | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
JP2015065270A (ja) * | 2013-09-25 | 2015-04-09 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06125068A (ja) * | 1992-10-14 | 1994-05-06 | Mitsubishi Electric Corp | 固体撮像素子 |
JP2004047682A (ja) * | 2002-07-11 | 2004-02-12 | Toshiba Corp | 固体撮像装置 |
JP2005045141A (ja) | 2003-07-25 | 2005-02-17 | Mitsubishi Electric Corp | 固体撮像装置 |
KR100687102B1 (ko) * | 2005-03-30 | 2007-02-26 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법. |
KR100731128B1 (ko) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
JP2007335554A (ja) * | 2006-06-14 | 2007-12-27 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP5422889B2 (ja) * | 2007-12-27 | 2014-02-19 | 株式会社ニコン | 固体撮像素子及びこれを用いた撮像装置 |
JP2009200297A (ja) * | 2008-02-22 | 2009-09-03 | Sharp Corp | パッド電極の開口方法および固体撮像素子の製造方法、固体撮像素子および電子情報機器 |
JP4697258B2 (ja) * | 2008-05-09 | 2011-06-08 | ソニー株式会社 | 固体撮像装置と電子機器 |
JP2009295799A (ja) * | 2008-06-05 | 2009-12-17 | Sharp Corp | 固体撮像装置の製造方法 |
JP5374082B2 (ja) * | 2008-07-09 | 2013-12-25 | キヤノン株式会社 | 撮像装置及び撮像システム |
KR101087997B1 (ko) * | 2009-04-17 | 2011-12-01 | (주)실리콘화일 | 광도파관을 구비하는 이미지센서 및 그 제조방법 |
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2010
- 2010-06-30 JP JP2010149619A patent/JP5468478B2/ja not_active Expired - Fee Related
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2011
- 2011-06-29 US US13/172,037 patent/US8530994B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10825852B2 (en) | 2018-08-13 | 2020-11-03 | Kabushiki Kaisha Toshiba | Solid state imaging device |
Also Published As
Publication number | Publication date |
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JP2012015284A (ja) | 2012-01-19 |
US20120001292A1 (en) | 2012-01-05 |
US8530994B2 (en) | 2013-09-10 |
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