JP5466815B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5466815B2 JP5466815B2 JP2007086902A JP2007086902A JP5466815B2 JP 5466815 B2 JP5466815 B2 JP 5466815B2 JP 2007086902 A JP2007086902 A JP 2007086902A JP 2007086902 A JP2007086902 A JP 2007086902A JP 5466815 B2 JP5466815 B2 JP 5466815B2
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- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- semiconductor
- charge storage
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000003860 storage Methods 0.000 claims description 169
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- 229910052739 hydrogen Inorganic materials 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 21
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 47
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 33
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- 238000005229 chemical vapour deposition Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 24
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
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- 150000001340 alkali metals Chemical class 0.000 description 2
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- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007086902A JP5466815B2 (ja) | 2006-03-31 | 2007-03-29 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006101052 | 2006-03-31 | ||
| JP2006101052 | 2006-03-31 | ||
| JP2007086902A JP5466815B2 (ja) | 2006-03-31 | 2007-03-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007294935A JP2007294935A (ja) | 2007-11-08 |
| JP2007294935A5 JP2007294935A5 (https=) | 2010-04-22 |
| JP5466815B2 true JP5466815B2 (ja) | 2014-04-09 |
Family
ID=38765183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007086902A Expired - Fee Related JP5466815B2 (ja) | 2006-03-31 | 2007-03-29 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5466815B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206355A (ja) * | 2008-02-28 | 2009-09-10 | Toshiba Corp | 不揮発性半導体メモリ及び不揮発性半導体メモリの製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2656986B2 (ja) * | 1989-10-02 | 1997-09-24 | 松下電子工業株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP4538693B2 (ja) * | 1998-01-26 | 2010-09-08 | ソニー株式会社 | メモリ素子およびその製造方法 |
| JP2001085545A (ja) * | 1999-09-16 | 2001-03-30 | Sony Corp | メモリ素子の製造方法 |
| JP3594550B2 (ja) * | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
| JP4472934B2 (ja) * | 2002-03-27 | 2010-06-02 | イノテック株式会社 | 半導体装置および半導体メモリ |
| JP5046464B2 (ja) * | 2002-12-18 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体記憶素子の作製方法 |
| US20050095786A1 (en) * | 2003-11-03 | 2005-05-05 | Ting-Chang Chang | Non-volatile memory and method of manufacturing floating gate |
| JP5072196B2 (ja) * | 2004-06-14 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2007
- 2007-03-29 JP JP2007086902A patent/JP5466815B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2007294935A (ja) | 2007-11-08 |
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