JP5461264B2 - マグネトロンスパッタリング装置、及び、スパッタリング方法 - Google Patents

マグネトロンスパッタリング装置、及び、スパッタリング方法 Download PDF

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Publication number
JP5461264B2
JP5461264B2 JP2010069394A JP2010069394A JP5461264B2 JP 5461264 B2 JP5461264 B2 JP 5461264B2 JP 2010069394 A JP2010069394 A JP 2010069394A JP 2010069394 A JP2010069394 A JP 2010069394A JP 5461264 B2 JP5461264 B2 JP 5461264B2
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JP
Japan
Prior art keywords
magnet
yoke
target
magnet unit
magnetic
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Active
Application number
JP2010069394A
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English (en)
Japanese (ja)
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JP2011202217A5 (enrdf_load_stackoverflow
JP2011202217A (ja
Inventor
雅夫 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
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Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2010069394A priority Critical patent/JP5461264B2/ja
Priority to TW100108997A priority patent/TWI425108B/zh
Priority to KR1020110026222A priority patent/KR101264991B1/ko
Priority to CN2011100727525A priority patent/CN102199754A/zh
Priority to CN201310024399.2A priority patent/CN103103489B/zh
Publication of JP2011202217A publication Critical patent/JP2011202217A/ja
Priority to KR1020130000245A priority patent/KR101290915B1/ko
Publication of JP2011202217A5 publication Critical patent/JP2011202217A5/ja
Application granted granted Critical
Publication of JP5461264B2 publication Critical patent/JP5461264B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2010069394A 2010-03-25 2010-03-25 マグネトロンスパッタリング装置、及び、スパッタリング方法 Active JP5461264B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010069394A JP5461264B2 (ja) 2010-03-25 2010-03-25 マグネトロンスパッタリング装置、及び、スパッタリング方法
TW100108997A TWI425108B (zh) 2010-03-25 2011-03-16 Magnetron sputtering device and sputtering method
KR1020110026222A KR101264991B1 (ko) 2010-03-25 2011-03-24 마그네트론 스퍼터링 장치 및 스퍼터링 방법
CN201310024399.2A CN103103489B (zh) 2010-03-25 2011-03-25 磁控溅射装置
CN2011100727525A CN102199754A (zh) 2010-03-25 2011-03-25 磁控溅射装置以及溅射方法
KR1020130000245A KR101290915B1 (ko) 2010-03-25 2013-01-02 마그네트론 스퍼터링 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010069394A JP5461264B2 (ja) 2010-03-25 2010-03-25 マグネトロンスパッタリング装置、及び、スパッタリング方法

Publications (3)

Publication Number Publication Date
JP2011202217A JP2011202217A (ja) 2011-10-13
JP2011202217A5 JP2011202217A5 (enrdf_load_stackoverflow) 2013-05-02
JP5461264B2 true JP5461264B2 (ja) 2014-04-02

Family

ID=44660733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010069394A Active JP5461264B2 (ja) 2010-03-25 2010-03-25 マグネトロンスパッタリング装置、及び、スパッタリング方法

Country Status (4)

Country Link
JP (1) JP5461264B2 (enrdf_load_stackoverflow)
KR (2) KR101264991B1 (enrdf_load_stackoverflow)
CN (2) CN102199754A (enrdf_load_stackoverflow)
TW (1) TWI425108B (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101654660B1 (ko) * 2012-07-11 2016-09-07 캐논 아네르바 가부시키가이샤 스퍼터링 장치 및 자석 유닛
EP3438322B1 (en) * 2016-03-30 2022-05-25 Keihin Ramtech Co., Ltd. Sputtering device, and method for producing film-formed body
CN108172396B (zh) * 2016-12-07 2021-11-16 北京北方华创微电子装备有限公司 磁性薄膜沉积腔室及薄膜沉积设备
JP6580113B2 (ja) * 2017-12-05 2019-09-25 キヤノントッキ株式会社 スパッタ装置及びその制御方法
KR102420329B1 (ko) * 2018-02-13 2022-07-14 한국알박(주) 마그네트론 스퍼터링 장치의 자석 집합체
CN108559964A (zh) * 2018-07-25 2018-09-21 衡阳舜达精工科技有限公司 一种磁控溅射阴极磁场布置结构及用于制备纳米碳薄膜的方法
US11239064B2 (en) * 2018-09-27 2022-02-01 Ulvac, Inc. Magnet unit for magnetron sputtering apparatus
JP7555248B2 (ja) * 2019-12-03 2024-09-24 日東電工株式会社 マグネトロンスパッタリング成膜装置
CN114761610B (zh) * 2019-12-03 2023-10-03 日东电工株式会社 磁控溅射成膜装置
CN113667951B (zh) * 2021-08-23 2023-03-21 杭州朗为科技有限公司 一种端头绝缘磁场可调的旋转阴极

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0462909A (ja) * 1990-06-30 1992-02-27 Mitsubishi Kasei Corp 磁場発生用構造体における磁石の固定方法
JPH0525625A (ja) * 1991-02-17 1993-02-02 Ulvac Japan Ltd マグネトロンスパツタカソード
JPH06136528A (ja) * 1992-10-23 1994-05-17 Sumitomo Metal Mining Co Ltd マグネトロンスパッタ装置
DE19836125C2 (de) * 1998-08-10 2001-12-06 Leybold Systems Gmbh Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung
JP3649933B2 (ja) * 1999-03-01 2005-05-18 シャープ株式会社 マグネトロンスパッタ装置
JP4592852B2 (ja) 1999-11-12 2010-12-08 キヤノンアネルバ株式会社 スパッタリング装置のマグネトロンカソード
KR100345924B1 (ko) * 2000-01-24 2002-07-27 한전건 평판 마그네트론 스퍼터링 장치
JP2004124171A (ja) 2002-10-02 2004-04-22 Matsushita Electric Ind Co Ltd プラズマ処理装置及び方法
KR100585578B1 (ko) 2003-09-30 2006-06-07 닛뽕빅터 가부시키가이샤 마그네트론 스퍼터링 장치
CN101107381A (zh) * 2005-02-02 2008-01-16 日立金属株式会社 磁控管溅射用磁电路装置及其制造方法
CN101126152B (zh) * 2006-08-18 2010-04-21 深圳豪威真空光电子股份有限公司 柱状磁控溅射器
JP2008121077A (ja) * 2006-11-14 2008-05-29 Hitachi Metals Ltd マグネトロンスパッタリング用磁気回路
CN101280420B (zh) * 2008-05-28 2010-09-29 东北大学 一种具有磁场增强和调节功能的磁控溅射靶

Also Published As

Publication number Publication date
CN103103489B (zh) 2015-07-22
KR101264991B1 (ko) 2013-05-15
TW201202461A (en) 2012-01-16
CN102199754A (zh) 2011-09-28
JP2011202217A (ja) 2011-10-13
KR101290915B1 (ko) 2013-07-29
KR20130006726A (ko) 2013-01-17
KR20110107757A (ko) 2011-10-04
TWI425108B (zh) 2014-02-01
CN103103489A (zh) 2013-05-15

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