TWI425108B - Magnetron sputtering device and sputtering method - Google Patents
Magnetron sputtering device and sputtering method Download PDFInfo
- Publication number
- TWI425108B TWI425108B TW100108997A TW100108997A TWI425108B TW I425108 B TWI425108 B TW I425108B TW 100108997 A TW100108997 A TW 100108997A TW 100108997 A TW100108997 A TW 100108997A TW I425108 B TWI425108 B TW I425108B
- Authority
- TW
- Taiwan
- Prior art keywords
- magnet
- yoke
- target
- cathode
- magnet unit
- Prior art date
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims description 20
- 238000004544 sputter deposition Methods 0.000 title claims description 12
- 230000005291 magnetic effect Effects 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- 238000011156 evaluation Methods 0.000 claims description 7
- 239000003302 ferromagnetic material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 16
- 230000004907 flux Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010069394A JP5461264B2 (ja) | 2010-03-25 | 2010-03-25 | マグネトロンスパッタリング装置、及び、スパッタリング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201202461A TW201202461A (en) | 2012-01-16 |
| TWI425108B true TWI425108B (zh) | 2014-02-01 |
Family
ID=44660733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100108997A TWI425108B (zh) | 2010-03-25 | 2011-03-16 | Magnetron sputtering device and sputtering method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5461264B2 (enrdf_load_stackoverflow) |
| KR (2) | KR101264991B1 (enrdf_load_stackoverflow) |
| CN (2) | CN102199754A (enrdf_load_stackoverflow) |
| TW (1) | TWI425108B (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101654660B1 (ko) * | 2012-07-11 | 2016-09-07 | 캐논 아네르바 가부시키가이샤 | 스퍼터링 장치 및 자석 유닛 |
| EP3438322B1 (en) * | 2016-03-30 | 2022-05-25 | Keihin Ramtech Co., Ltd. | Sputtering device, and method for producing film-formed body |
| CN108172396B (zh) * | 2016-12-07 | 2021-11-16 | 北京北方华创微电子装备有限公司 | 磁性薄膜沉积腔室及薄膜沉积设备 |
| JP6580113B2 (ja) * | 2017-12-05 | 2019-09-25 | キヤノントッキ株式会社 | スパッタ装置及びその制御方法 |
| KR102420329B1 (ko) * | 2018-02-13 | 2022-07-14 | 한국알박(주) | 마그네트론 스퍼터링 장치의 자석 집합체 |
| CN108559964A (zh) * | 2018-07-25 | 2018-09-21 | 衡阳舜达精工科技有限公司 | 一种磁控溅射阴极磁场布置结构及用于制备纳米碳薄膜的方法 |
| US11239064B2 (en) * | 2018-09-27 | 2022-02-01 | Ulvac, Inc. | Magnet unit for magnetron sputtering apparatus |
| JP7555248B2 (ja) * | 2019-12-03 | 2024-09-24 | 日東電工株式会社 | マグネトロンスパッタリング成膜装置 |
| CN114761610B (zh) * | 2019-12-03 | 2023-10-03 | 日东电工株式会社 | 磁控溅射成膜装置 |
| CN113667951B (zh) * | 2021-08-23 | 2023-03-21 | 杭州朗为科技有限公司 | 一种端头绝缘磁场可调的旋转阴极 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06136528A (ja) * | 1992-10-23 | 1994-05-17 | Sumitomo Metal Mining Co Ltd | マグネトロンスパッタ装置 |
| TW200641173A (en) * | 2005-02-02 | 2006-12-01 | Neomax Co Ltd | Magnetic loop device for magnetron sputtering |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0462909A (ja) * | 1990-06-30 | 1992-02-27 | Mitsubishi Kasei Corp | 磁場発生用構造体における磁石の固定方法 |
| JPH0525625A (ja) * | 1991-02-17 | 1993-02-02 | Ulvac Japan Ltd | マグネトロンスパツタカソード |
| DE19836125C2 (de) * | 1998-08-10 | 2001-12-06 | Leybold Systems Gmbh | Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung |
| JP3649933B2 (ja) * | 1999-03-01 | 2005-05-18 | シャープ株式会社 | マグネトロンスパッタ装置 |
| JP4592852B2 (ja) | 1999-11-12 | 2010-12-08 | キヤノンアネルバ株式会社 | スパッタリング装置のマグネトロンカソード |
| KR100345924B1 (ko) * | 2000-01-24 | 2002-07-27 | 한전건 | 평판 마그네트론 스퍼터링 장치 |
| JP2004124171A (ja) | 2002-10-02 | 2004-04-22 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及び方法 |
| KR100585578B1 (ko) | 2003-09-30 | 2006-06-07 | 닛뽕빅터 가부시키가이샤 | 마그네트론 스퍼터링 장치 |
| CN101126152B (zh) * | 2006-08-18 | 2010-04-21 | 深圳豪威真空光电子股份有限公司 | 柱状磁控溅射器 |
| JP2008121077A (ja) * | 2006-11-14 | 2008-05-29 | Hitachi Metals Ltd | マグネトロンスパッタリング用磁気回路 |
| CN101280420B (zh) * | 2008-05-28 | 2010-09-29 | 东北大学 | 一种具有磁场增强和调节功能的磁控溅射靶 |
-
2010
- 2010-03-25 JP JP2010069394A patent/JP5461264B2/ja active Active
-
2011
- 2011-03-16 TW TW100108997A patent/TWI425108B/zh active
- 2011-03-24 KR KR1020110026222A patent/KR101264991B1/ko active Active
- 2011-03-25 CN CN2011100727525A patent/CN102199754A/zh active Pending
- 2011-03-25 CN CN201310024399.2A patent/CN103103489B/zh active Active
-
2013
- 2013-01-02 KR KR1020130000245A patent/KR101290915B1/ko active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06136528A (ja) * | 1992-10-23 | 1994-05-17 | Sumitomo Metal Mining Co Ltd | マグネトロンスパッタ装置 |
| TW200641173A (en) * | 2005-02-02 | 2006-12-01 | Neomax Co Ltd | Magnetic loop device for magnetron sputtering |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103103489B (zh) | 2015-07-22 |
| KR101264991B1 (ko) | 2013-05-15 |
| JP5461264B2 (ja) | 2014-04-02 |
| TW201202461A (en) | 2012-01-16 |
| CN102199754A (zh) | 2011-09-28 |
| JP2011202217A (ja) | 2011-10-13 |
| KR101290915B1 (ko) | 2013-07-29 |
| KR20130006726A (ko) | 2013-01-17 |
| KR20110107757A (ko) | 2011-10-04 |
| CN103103489A (zh) | 2013-05-15 |
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