JP5447794B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5447794B2
JP5447794B2 JP2009113492A JP2009113492A JP5447794B2 JP 5447794 B2 JP5447794 B2 JP 5447794B2 JP 2009113492 A JP2009113492 A JP 2009113492A JP 2009113492 A JP2009113492 A JP 2009113492A JP 5447794 B2 JP5447794 B2 JP 5447794B2
Authority
JP
Japan
Prior art keywords
light
layer
electrode
light receiving
cladding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009113492A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010263109A5 (enExample
JP2010263109A (ja
Inventor
保貴 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2009113492A priority Critical patent/JP5447794B2/ja
Priority to US12/767,103 priority patent/US8344393B2/en
Publication of JP2010263109A publication Critical patent/JP2010263109A/ja
Publication of JP2010263109A5 publication Critical patent/JP2010263109A5/ja
Priority to US13/693,624 priority patent/US8629461B2/en
Application granted granted Critical
Publication of JP5447794B2 publication Critical patent/JP5447794B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
JP2009113492A 2009-05-08 2009-05-08 発光装置 Expired - Fee Related JP5447794B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009113492A JP5447794B2 (ja) 2009-05-08 2009-05-08 発光装置
US12/767,103 US8344393B2 (en) 2009-05-08 2010-04-26 Light receiving and emitting device
US13/693,624 US8629461B2 (en) 2009-05-08 2012-12-04 Light receiving and emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009113492A JP5447794B2 (ja) 2009-05-08 2009-05-08 発光装置

Publications (3)

Publication Number Publication Date
JP2010263109A JP2010263109A (ja) 2010-11-18
JP2010263109A5 JP2010263109A5 (enExample) 2012-06-21
JP5447794B2 true JP5447794B2 (ja) 2014-03-19

Family

ID=43061841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009113492A Expired - Fee Related JP5447794B2 (ja) 2009-05-08 2009-05-08 発光装置

Country Status (2)

Country Link
US (2) US8344393B2 (enExample)
JP (1) JP5447794B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE503531T1 (de) 2008-12-12 2011-04-15 Amrona Ag Inertisierungsverfahren zur brandverhütung und/oder feuerlöschung sowie inertisierungsanlage zur durchführung des verfahrens
JP5447794B2 (ja) * 2009-05-08 2014-03-19 セイコーエプソン株式会社 発光装置
JP5447799B2 (ja) * 2009-06-18 2014-03-19 セイコーエプソン株式会社 発光装置およびその駆動方法、並びに、プロジェクター
ITMI20111446A1 (it) * 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente
ITMI20111447A1 (it) 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente
US20140184062A1 (en) * 2012-12-27 2014-07-03 GE Lighting Solutions, LLC Systems and methods for a light emitting diode chip
US10022741B2 (en) 2014-08-22 2018-07-17 Nse Products, Inc. Selectively actuated fluid dispenser
JP2018182306A (ja) * 2017-04-17 2018-11-15 浜松ホトニクス株式会社 光半導体素子、及び光半導体素子の駆動方法
WO2025117622A1 (en) * 2023-11-27 2025-06-05 Massachusetts Institute Of Technology An integrated pixel cell for a display device and/or optical communication device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426159A (ja) * 1990-05-22 1992-01-29 Ricoh Co Ltd 半導体光集積装置
JPH0433386A (ja) 1990-05-30 1992-02-04 Omron Corp 端面出射型半導体発光素子およびその駆動方法
JPH08162669A (ja) 1994-12-06 1996-06-21 Nippondenso Co Ltd スーパールミネッセントダイオード
JPH103691A (ja) 1996-04-18 1998-01-06 Matsushita Electric Ind Co Ltd 光ピックアップ装置
US6459716B1 (en) * 2001-02-01 2002-10-01 Nova Crystals, Inc. Integrated surface-emitting laser and modulator device
KR100575964B1 (ko) 2003-12-16 2006-05-02 삼성전자주식회사 광검출기가 모놀리식 집적된 전계 흡수형 광변조 모듈
JP2005216954A (ja) * 2004-01-27 2005-08-11 Sumitomo Electric Ind Ltd 半導体光素子
JP2009238846A (ja) 2008-03-26 2009-10-15 Seiko Epson Corp 発光装置
JP5411440B2 (ja) 2008-03-26 2014-02-12 セイコーエプソン株式会社 発光装置
JP2009238845A (ja) 2008-03-26 2009-10-15 Seiko Epson Corp 発光モジュール及びその製造方法
JP5168476B2 (ja) 2008-03-26 2013-03-21 セイコーエプソン株式会社 発光装置
JP5382289B2 (ja) 2008-03-26 2014-01-08 セイコーエプソン株式会社 発光装置
JP5447794B2 (ja) * 2009-05-08 2014-03-19 セイコーエプソン株式会社 発光装置

Also Published As

Publication number Publication date
US20130092959A1 (en) 2013-04-18
US20100283063A1 (en) 2010-11-11
US8629461B2 (en) 2014-01-14
US8344393B2 (en) 2013-01-01
JP2010263109A (ja) 2010-11-18

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